Infineon Technologies Products

IHW15T120FKSA1

Infineon Technologies

IGBT 1200V 30A 113W TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
• Power - Max: 113W
• Switching Energy: 2.7mJ
• Input Type: Standard
• Gate Charge: 85nC
• Td (on/off) @ 25°C: 50ns/520ns
• Test Condition: 600V, 15A, 56 Ohm, 15V
• Reverse Recovery Time (trr): 140ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

Package: TO-247-3

IRGP4790D-EPBF

Infineon Technologies

IGBT 650V TO-247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 140A
• Current - Collector Pulsed (Icm): 225A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
• Power - Max: 455W
• Switching Energy: 2.5mJ (on), 2.2mJ (off)
• Input Type: Standard
• Gate Charge: 210nC
• Td (on/off) @ 25°C: 50ns/200ns
• Test Condition: 400V, 75A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 170ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

Package: TO-247-3

IPU60R2K0C6BKMA1

Infineon Technologies

MOSFET N-CH 600V 2.4A TO-251

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 60µA
• Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 22.3W (Tc)
• Rds On (Max) @ Id, Vgs: 2 Ohm @ 760mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO251-3
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Package: TO-251-3 Short Leads, IPak, TO-251AA

IPB65R095C7ATMA1

Infineon Technologies

MOSFET N-CH TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 590µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 128W (Tc)
• Rds On (Max) @ Id, Vgs: 95 mOhm @ 11.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPP80N06S209AKSA2

Infineon Technologies

MOSFET N-CH 55V 80A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 125µA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 190W (Tc)
• Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

Package: TO-220-3

IPD90P03P404ATMA1

Infineon Technologies

MOSFET P-CH 30V 90A TO252-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 253µA
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 137W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 90A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

BF1009SE6327HTSA1

Infineon Technologies

MOSFET N-CH 12V 25MA SOT-143

• Transistor Type: N-Channel
• Frequency: 800MHz
• Gain: 22dB
• Voltage - Test: 9V
• Current Rating: 25mA
• Noise Figure: 1.4dB
• Current - Test: -
• Power - Output: -
• Voltage - Rated: 12V
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: PG-SOT143-4

Package: TO-253-4, TO-253AA

BC 846B E6433

Infineon Technologies

TRANS NPN 65V 0.1A SOT-23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 65V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 330mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

BBY5202WH6327XTSA1

Infineon Technologies

DIODE TUNING 7V 20MA SCD80

• Capacitance @ Vr, F: 1.45pF @ 4V, 1MHz
• Capacitance Ratio: 2.1
• Capacitance Ratio Condition: C1/C4
• Voltage - Peak Reverse (Max): 7V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-80
• Supplier Device Package: PG-SCD80-2

Package: SC-80

IDD08SG60CXTMA1

Infineon Technologies

DIODE SCHOTTKY 600V 8A TO252-3

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 2.1V @ 8A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 70µA @ 600V
• Capacitance @ Vr, F: 240pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3
• Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

21-0065PBF

Infineon Technologies

IC REG BUCK ADJ 25A SYNC LGA

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 1.5V
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 0.6V
• Voltage - Output (Max): 12V
• Current - Output: 25A
• Frequency - Switching: 225kHz ~ 1.65MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 17-LLGA
• Supplier Device Package: 17-LGA (7.65x7.65)

Package: 17-LLGA

BTS54040LBEAUMA1

Infineon Technologies

IC PWR SWITCH HISIDE PG-TSON-24

• Switch Type: General Purpose
• Number of Outputs: 4
• Ratio - Input:Output: 1:2
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 5.5 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): 3.8 V ~ 5.5 V
• Current - Output (Max): 2A
• Rds On (Typ): 39 mOhm
• Input Type: -
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 24-PowerVDFN
• Supplier Device Package: TSON-24-3

Package: 24-PowerVDFN

BTS3408G

Infineon Technologies

IC SWITCH LOW SIDE DUAL 8DSO

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 4.5 V ~ 60 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 550mA
• Rds On (Typ): 480 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart, Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

Package: 8-SOIC (0.154", 3.90mm Width)

BTN7930PAKSA1

Infineon Technologies

IC MOTOR DRIVER PAR TO220-7

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 32A
• Voltage - Supply: 8 V ~ 18 V
• Voltage - Load: 8 V ~ 18 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-7 (Formed Leads)
• Supplier Device Package: PG-TO220-7

Package: TO-220-7 (Formed Leads)

IRMCF371TY

Infineon Technologies

IC MOTOR CONTROLLR I2C/SPI 48QFP

• Motor Type - Stepper: -
• Motor Type - AC, DC: AC, Synchronous
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (3)
• Interface: I2C, RS-232, SPI
• Technology: IGBT
• Step Resolution: -
• Applications: Appliance
• Current - Output: -
• Voltage - Supply: 1.62 V ~ 1.98 V, 3 V ~ 3.6 V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-LQFP
• Supplier Device Package: 48-QFP (7x7)

Package: 48-LQFP

IR2127

Infineon Technologies

IC MOSFET DRIVER CUR-SENSE 8-DIP

• Driven Configuration: High-Side or Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 12 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 3V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 40ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

Package: 8-DIP (0.300", 7.62mm)

IR25606SPBF

Infineon Technologies

IC HALF BRIDGE DRIVER 8SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.9V
• Current - Peak Output (Source, Sink): 200mA, 350mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 150ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

TLE94112ELXUMA1

Infineon Technologies

IC DRIVER HALF-BRIDGE 24SSOP

• Output Configuration: Half Bridge (12)
• Applications: AC Motors, DC Motors, General Purpose
• Interface: SPI
• Load Type: Inductive
• Technology: Power MOSFET
• Rds On (Typ): 850 mOhm LS, 850 mOhm HS
• Current - Output / Channel: 500mA
• Current - Peak Output: 2A
• Voltage - Supply: 3 V ~ 5.5 V
• Voltage - Load: 5.5 V ~ 20 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: -
• Fault Protection: Over Temperature, Short Circuit, UVLO
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

TLE8110EDXUMA1

Infineon Technologies

IC LOW-SIDE SWITCH DSO36-72

• Type: Low-Side Switch
• Applications: -
• Mounting Type: Surface Mount
• Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-36-72

Package: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad

CY9AF156NAPMC-GE1

Infineon Technologies

MULTI-MARKET MCUS

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 83
• Program Memory Size: 544KB (544K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 64K x 8
• Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
• Data Converters: A/D 24x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

Package: -

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CY7C1361A-100BGC

Infineon Technologies

IC SRAM 9MBIT 100MHZ 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous, SDR
• Memory Size: 9Mbit
• Memory Interface: Parallel
• Clock Frequency: 100 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 8 ns
• Voltage - Supply: 3.135V ~ 3.6V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BGA
• Supplier Device Package: 119-PBGA (14x22)

Package: -

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TZ400N24KOFHPSA1

Infineon Technologies

SCR MODULE 2.4KV 1050A MODULE

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 2.4 kV
• Current - On State (It (AV)) (Max): 670 A
• Current - On State (It (RMS)) (Max): 1050 A
• Voltage - Gate Trigger (Vgt) (Max): 2.2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

Package: -

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BSM75GB120DLCHOSA1

Infineon Technologies

IGBT MOD 1200V 170A 690W

• IGBT Type: -
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 170 A
• Power - Max: 690 W
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Package: -

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IR3825MTRPBF

Infineon Technologies

IC REG BUCK CTRLR PQFN

• Function: -
• Output Configuration: -
• Topology: -
• Output Type: -
• Number of Outputs: -
• Voltage - Input (Min): -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Current - Output: -
• Frequency - Switching: -
• Synchronous Rectifier: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

Request a Quote

IPP90R800C3XKSA2

Infineon Technologies

MOSFET N-CH 900V 6.9A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900 V
• Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 460µA
• Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 104W (Tc)
• Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

Package: -

AIMZH120R010M1TXKSA1

Infineon Technologies

SIC_DISCRETE

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
• Vgs(th) (Max) @ Id: 5.1V @ 30mA
• Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 5703 pF @ 800 V
• Vgs (Max): +23V, -5V
• FET Feature: -
• Power Dissipation (Max): 750W (Tc)
• Rds On (Max) @ Id, Vgs: 11.3mOhm @ 93A, 20V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-4-11
• Package / Case: TO-247-4

Package: -

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S6J336CJTBSE20000

Infineon Technologies

TRAVEO-40NM

• Core Processor: ARM® Cortex®-R5F
• Core Size: 32-Bit
• Speed: 132MHz
• Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
• Peripherals: DMA, I2S, LVD, POR, PWM, WDT
• Number of I/O: 126
• Program Memory Size: 112KB (112K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 48x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 176-LQFP Exposed Pad
• Supplier Device Package: 176-TEQFP (24x24)

Package: -

IPG20N04S409AATMA1

Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
• Vgs(th) (Max) @ Id: 4V @ 22µA
• Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
• Power - Max: 54W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-4

Package: -

BSC152N15LS5ATMA1

Infineon Technologies

TRENCH >=100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 55A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 60µA
• Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 75 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
• Rds On (Max) @ Id, Vgs: 15.2mOhm @ 29A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

Package: -

IPB80P04P4L08ATMA2

Infineon Technologies

MOSFET P-CH 40V 80A TO263-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 120µA
• Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
• Vgs (Max): +5V, -16V
• FET Feature: -
• Power Dissipation (Max): 75W (Tc)
• Rds On (Max) @ Id, Vgs: 8.2mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Package: -