Page 8 - Microsemi Corporation Products - Transistors - Bipolar (BJT) - RF

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2N5031	Microsemi Corporation	TRANS RF NPN 200MW 20MA TO72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 400MHz Noise Figure (dB Typ @ f): - Gain: 12dB @ 400MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	Package: TO-206AF, TO-72-4 Metal Can	Stock15,096	10V	400MHz	-	12dB @ 400MHz	200mW	25 @ 1mA, 6V	20mA	-	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
2N4427	Microsemi Corporation	TRANS RF NPN 1W 400MA TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: 10dB @ 175MHz Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	Package: TO-205AD, TO-39-3 Metal Can	Stock61,800	40V	500MHz	-	10dB @ 175MHz	1W	10 @ 100mA, 5V	400mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
2N3866A	Microsemi Corporation	TRANS RF NPN 1W 400MA TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 400MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	Package: TO-205AD, TO-39-3 Metal Can	Stock15,828	30V	400MHz	-	-	1W	25 @ 50mA, 5V	400mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
SD1013	Microsemi Corporation	TRANS RF BIPO 13W 1A M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 13W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M135 Supplier Device Package: M135	Package: M135	Stock5,328	35V	150MHz	-	10dB	13W	10 @ 200mA, 5V	1A	200°C (TJ)	Chassis Mount	M135	M135
SD1536-03	Microsemi Corporation	TRANS RF BIPO 292W 10A M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8.4dB Power - Max: 292W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V Current - Collector (Ic) (Max): 10A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	Package: M115	Stock7,040	65V	1.025GHz ~ 1.15GHz	-	8.4dB	292W	5 @ 100mA, 5V	10A	200°C (TJ)	Chassis Mount	M115	M115
SD1013-03	Microsemi Corporation	TRANS RF BIPO 13W 1A M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 13W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M113 Supplier Device Package: M113	Package: M113	Stock6,240	35V	150MHz	-	10dB	13W	10 @ 200mA, 5V	1A	200°C (TJ)	Chassis Mount	M113	M113
UTV200	Microsemi Corporation	TRANS RF BIPO 80W 4.5A 55JV2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 28V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 9.5dB Power - Max: 80W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 4.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55JV Supplier Device Package: 55JV	Package: 55JV	Stock7,616	28V	470MHz ~ 860MHz	-	8.5dB ~ 9.5dB	80W	10 @ 1A, 5V	4.5A	200°C (TJ)	Chassis Mount	55JV	55JV
MS2201	Microsemi Corporation	TRANS RF BIPO 10W 250MA M220 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 10W DC Current Gain (hFE) (Min) @ Ic, Vce: 0.95 @ 10mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M220 Supplier Device Package: M220	Package: M220	Stock16,476	45V	1.025GHz ~ 1.15GHz	-	9dB	10W	0.95 @ 10mA, 5V	250mA	200°C (TJ)	Chassis Mount	M220	M220
MS1579	Microsemi Corporation	TRANS RF BIPO 65W 5.2A M156 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 65W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 20V Current - Collector (Ic) (Max): 5.2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M156 Supplier Device Package: M156	Package: M156	Stock3,360	25V	470MHz ~ 860MHz	-	8.5dB	65W	10 @ 500mA, 20V	5.2A	200°C (TJ)	Chassis Mount	M156	M156
MS1406	Microsemi Corporation	TRANS RF BIPO 30W 3A M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 8.2dB Power - Max: 30W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M135 Supplier Device Package: M135	Package: M135	Stock7,120	35V	175MHz	-	8.2dB	30W	10 @ 200mA, 5V	3A	200°C (TJ)	Chassis, Stud Mount	M135	M135
MS1337	Microsemi Corporation	TRANS RF BIPO 70W 8A M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M113 Supplier Device Package: M113	Package: M113	Stock3,568	18V	175MHz	-	10dB	70W	20 @ 250mA, 5V	8A	200°C (TJ)	Chassis Mount	M113	M113
2N2857	Microsemi Corporation	TRANS RF BIPO NPN 15V 40MA TO72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 12.5dB ~ 21dB @ 450MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	Package: TO-206AF, TO-72-4 Metal Can	Stock20,976	15V	500MHz	4.5dB @ 450MHz	12.5dB ~ 21dB @ 450MHz	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
2225-4L	Microsemi Corporation	TRANS RF BIPO 10W 600MA 55LV1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 2.2GHz ~ 2.5GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 10W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V Current - Collector (Ic) (Max): 600mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55LV Supplier Device Package: 55LV	Package: 55LV	Stock3,712	40V	2.2GHz ~ 2.5GHz	-	8.5dB	10W	20 @ 200mA, 5V	600mA	200°C (TJ)	Chassis Mount	55LV	55LV
UMIL25	Microsemi Corporation	TRANS RF BIPO 70W 3A 55HV2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 33V Frequency - Transition: 225MHz ~ 400MHz Noise Figure (dB Typ @ f): - Gain: 8.9db ~ 10dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55HV Supplier Device Package: 55HV	Package: 55HV	Stock6,064	33V	225MHz ~ 400MHz	-	8.9db ~ 10dB	70W	10 @ 500mA, 5V	3A	200°C (TJ)	Chassis Mount	55HV	55HV
UTV020	Microsemi Corporation	TRANS RF BIPO 17W 1.2A 55FT-6 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 12dB Power - Max: 17W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 250mA, 5V Current - Collector (Ic) (Max): 1.2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	Package: 55FT	Stock3,360	25V	470MHz ~ 860MHz	-	12dB	17W	10 @ 250mA, 5V	1.2A	200°C (TJ)	Chassis, Stud Mount	55FT	55FT
UTV010	Microsemi Corporation	TRANS RF BIPO 15W 1.25A 55FT-5 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 24V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 11.5dB Power - Max: 15W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V Current - Collector (Ic) (Max): 1.25A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	Package: 55FT	Stock5,376	24V	470MHz ~ 860MHz	-	11.5dB	15W	15 @ 200mA, 5V	1.25A	200°C (TJ)	Chassis, Stud Mount	55FT	55FT
MSC1400M	Microsemi Corporation	TRANS RF BIPO 1000W 28A M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.5dB Power - Max: 1000W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 28A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	Package: M216	Stock5,584	65V	1.025GHz ~ 1.15GHz	-	6.5dB	1000W	15 @ 1A, 5V	28A	250°C (TJ)	Chassis Mount	M216	M216
MS1051	Microsemi Corporation	TRANS RF BIPO 290W 20A M174 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 11dB ~ 13dB Power - Max: 290W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5mA, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M174 Supplier Device Package: M174	Package: M174	Stock6,624	18V	30MHz	-	11dB ~ 13dB	290W	10 @ 5mA, 5V	20A	200°C (TJ)	Chassis Mount	M174	M174
MRF586	Microsemi Corporation	TRANS RF BIPO 1W 200MA TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 17V Frequency - Transition: 3GHz Noise Figure (dB Typ @ f): - Gain: 13.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	Package: TO-205AD, TO-39-3 Metal Can	Stock11,112	17V	3GHz	-	13.5dB	1W	40 @ 50mA, 5V	200mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
MRF545	Microsemi Corporation	TRANS RF BIPO 3.5W 400MA TO39 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 14dB Power - Max: 3.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 6V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	Package: TO-205AD, TO-39-3 Metal Can	Stock3,168	70V	1GHz ~ 1.4GHz	-	14dB	3.5W	15 @ 50mA, 6V	400mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
0912-25	Microsemi Corporation	TRANS RF BIPO 125W 2.5A 55CT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 10dB Power - Max: 125W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CT Supplier Device Package: 55CT	Package: 55CT	Stock3,328	55V	960MHz ~ 1.215GHz	-	8.5dB ~ 10dB	125W	10 @ 300mA, 5V	2.5A	200°C (TJ)	Chassis Mount	55CT	55CT
MS2472	Microsemi Corporation	TRANS RF BIPO 1350W 40A M112 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 5.6dB Power - Max: 1350W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V Current - Collector (Ic) (Max): 40A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M112 Supplier Device Package: M112	Package: M112	Stock2,864	65V	1.025GHz ~ 1.15GHz	-	5.6dB	1350W	5 @ 250mA, 5V	40A	200°C (TJ)	Chassis Mount	M112	M112
MRF581AG	Microsemi Corporation	TRANS RF NPN 5GHZ 15V MACR0 X Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: Macro-X Supplier Device Package: Macro-X	Package: Macro-X	Stock5,744	15V	5GHz	3dB ~ 3.5dB @ 500MHz	13dB ~ 15.5dB	1.25W	90 @ 50mA, 5V	200mA	150°C (TJ)	Surface Mount	Macro-X	Macro-X
MRF5812GR1	Microsemi Corporation	TRANS NPN 15V 200MA 8-SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock12,312	15V	5GHz	2dB ~ 3dB @ 500MHz	13dB ~ 15.5dB	1.25W	50 @ 50mA, 5V	200mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MRF5812GR2	Microsemi Corporation	TRANS NPN 15V 200MA 8-SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,320	15V	5GHz	2dB ~ 3dB @ 500MHz	13dB ~ 15.5dB	1.25W	50 @ 50mA, 5V	200mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MRF904	Microsemi Corporation	TRANS NPN 15V 30MA TO-72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 4GHz Noise Figure (dB Typ @ f): 1.5dB @ 450MHz Gain: 6.5dB ~ 10.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	Package: TO-206AF, TO-72-4 Metal Can	Stock12,960	15V	4GHz	1.5dB @ 450MHz	6.5dB ~ 10.5dB	200mW	30 @ 5mA, 5V	30mA	200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
MRF581G	Microsemi Corporation	TRANS NPN 18V 200MA MACRO X Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: Micro-X ceramic (84C) Supplier Device Package: Micro-X ceramic (84C)	Package: Micro-X ceramic (84C)	Stock250,548	18V	5GHz	3dB ~ 3.5dB @ 500MHz	13dB ~ 15.5dB	1.25W	50 @ 50mA, 5V	200mA	150°C (TJ)	Surface Mount	Micro-X ceramic (84C)	Micro-X ceramic (84C)
MRF581A	Microsemi Corporation	TRANS NPN 15V 200MA MACRO X Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: Micro-X ceramic (84C) Supplier Device Package: Micro-X ceramic (84C)	Package: Micro-X ceramic (84C)	Stock48,072	15V	5GHz	3dB ~ 3.5dB @ 500MHz	13dB ~ 15.5dB	1.25W	90 @ 50mA, 5V	200mA	150°C (TJ)	Surface Mount	Micro-X ceramic (84C)	Micro-X ceramic (84C)
MRF581	Microsemi Corporation	TRANS NPN 18V 200MA MACRO X Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: Micro-X ceramic (84C) Supplier Device Package: Micro-X ceramic (84C)	Package: Micro-X ceramic (84C)	Stock5,808	18V	5GHz	3dB ~ 3.5dB @ 500MHz	13dB ~ 15.5dB	1.25W	50 @ 50mA, 5V	200mA	150°C (TJ)	Surface Mount	Micro-X ceramic (84C)	Micro-X ceramic (84C)
MRF559G	Microsemi Corporation	TRANS NPN 16V 150MA MACRO X Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Current - Collector (Ic) (Max): 150mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: Micro-X ceramic (84C) Supplier Device Package: Micro-X ceramic (84C)	Package: Micro-X ceramic (84C)	Stock4,992	16V	870MHz	-	9.5dB	2W	30 @ 50mA, 10V	150mA	-	Surface Mount	Micro-X ceramic (84C)	Micro-X ceramic (84C)

2N5031

Microsemi Corporation

TRANS RF NPN 200MW 20MA TO72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 400MHz
Noise Figure (dB Typ @ f): -
Gain: 12dB @ 400MHz
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

Package: TO-206AF, TO-72-4 Metal Can

Stock15,096

10V

400MHz

-

12dB @ 400MHz

200mW

25 @ 1mA, 6V

20mA

-

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

2N4427

Microsemi Corporation

TRANS RF NPN 1W 400MA TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB @ 175MHz
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

Package: TO-205AD, TO-39-3 Metal Can

Stock61,800

40V

500MHz

-

10dB @ 175MHz

1W

10 @ 100mA, 5V

400mA

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

2N3866A

Microsemi Corporation

TRANS RF NPN 1W 400MA TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 400MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

Package: TO-205AD, TO-39-3 Metal Can

Stock15,828

30V

400MHz

-

1W

25 @ 50mA, 5V

400mA

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

SD1013

Microsemi Corporation

TRANS RF BIPO 13W 1A M135

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 13W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M135
Supplier Device Package: M135

Package: M135

Stock5,328

35V

150MHz

-

10dB

13W

10 @ 200mA, 5V

1A

200°C (TJ)

Chassis Mount

M135

SD1536-03

Microsemi Corporation

TRANS RF BIPO 292W 10A M115

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 8.4dB
Power - Max: 292W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V
Current - Collector (Ic) (Max): 10A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M115
Supplier Device Package: M115

Package: M115

Stock7,040

65V

1.025GHz ~ 1.15GHz

-

8.4dB

292W

5 @ 100mA, 5V

10A

200°C (TJ)

Chassis Mount

M115

SD1013-03

Microsemi Corporation

TRANS RF BIPO 13W 1A M113

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 13W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M113
Supplier Device Package: M113

Package: M113

Stock6,240

35V

150MHz

-

10dB

13W

10 @ 200mA, 5V

1A

200°C (TJ)

Chassis Mount

M113

UTV200

Microsemi Corporation

TRANS RF BIPO 80W 4.5A 55JV2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 28V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB ~ 9.5dB
Power - Max: 80W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 4.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55JV
Supplier Device Package: 55JV

Package: 55JV

Stock7,616

28V

470MHz ~ 860MHz

-

8.5dB ~ 9.5dB

80W

10 @ 1A, 5V

4.5A

200°C (TJ)

Chassis Mount

55JV

MS2201

Microsemi Corporation

TRANS RF BIPO 10W 250MA M220

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 10W
DC Current Gain (hFE) (Min) @ Ic, Vce: 0.95 @ 10mA, 5V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M220
Supplier Device Package: M220

Package: M220

Stock16,476

45V

1.025GHz ~ 1.15GHz

-

9dB

10W

0.95 @ 10mA, 5V

250mA

200°C (TJ)

Chassis Mount

M220

MS1579

Microsemi Corporation

TRANS RF BIPO 65W 5.2A M156

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB
Power - Max: 65W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 20V
Current - Collector (Ic) (Max): 5.2A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M156
Supplier Device Package: M156

Package: M156

Stock3,360

25V

470MHz ~ 860MHz

-

8.5dB

65W

10 @ 500mA, 20V

5.2A

200°C (TJ)

Chassis Mount

M156

MS1406

Microsemi Corporation

TRANS RF BIPO 30W 3A M135

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 8.2dB
Power - Max: 30W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector (Ic) (Max): 3A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: M135
Supplier Device Package: M135

Package: M135

Stock7,120

35V

175MHz

-

8.2dB

30W

10 @ 200mA, 5V

3A

200°C (TJ)

Chassis, Stud Mount

M135

MS1337

Microsemi Corporation

TRANS RF BIPO 70W 8A M113

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 70W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M113
Supplier Device Package: M113

Package: M113

Stock3,568

18V

175MHz

-

10dB

70W

20 @ 250mA, 5V

8A

200°C (TJ)

Chassis Mount

M113

2N2857

Microsemi Corporation

TRANS RF BIPO NPN 15V 40MA TO72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 12.5dB ~ 21dB @ 450MHz
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

Package: TO-206AF, TO-72-4 Metal Can

Stock20,976

15V

500MHz

4.5dB @ 450MHz

12.5dB ~ 21dB @ 450MHz

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

2225-4L

Microsemi Corporation

TRANS RF BIPO 10W 600MA 55LV1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 2.2GHz ~ 2.5GHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB
Power - Max: 10W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Current - Collector (Ic) (Max): 600mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55LV
Supplier Device Package: 55LV

Package: 55LV

Stock3,712

40V

2.2GHz ~ 2.5GHz

-

8.5dB

10W

20 @ 200mA, 5V

600mA

200°C (TJ)

Chassis Mount

55LV

UMIL25

Microsemi Corporation

TRANS RF BIPO 70W 3A 55HV2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 33V
Frequency - Transition: 225MHz ~ 400MHz
Noise Figure (dB Typ @ f): -
Gain: 8.9db ~ 10dB
Power - Max: 70W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 3A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55HV
Supplier Device Package: 55HV

Package: 55HV

Stock6,064

33V

225MHz ~ 400MHz

-

8.9db ~ 10dB

70W

10 @ 500mA, 5V

3A

200°C (TJ)

Chassis Mount

55HV

UTV020

Microsemi Corporation

TRANS RF BIPO 17W 1.2A 55FT-6

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 12dB
Power - Max: 17W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 250mA, 5V
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

Package: 55FT

Stock3,360

25V

470MHz ~ 860MHz

-

12dB

17W

10 @ 250mA, 5V

1.2A

200°C (TJ)

Chassis, Stud Mount

55FT

UTV010

Microsemi Corporation

TRANS RF BIPO 15W 1.25A 55FT-5

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 24V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 11.5dB
Power - Max: 15W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Current - Collector (Ic) (Max): 1.25A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

Package: 55FT

Stock5,376

24V

470MHz ~ 860MHz

-

11.5dB

15W

15 @ 200mA, 5V

1.25A

200°C (TJ)

Chassis, Stud Mount

55FT

MSC1400M

Microsemi Corporation

TRANS RF BIPO 1000W 28A M216

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.5dB
Power - Max: 1000W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 28A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M216
Supplier Device Package: M216

Package: M216

Stock5,584

65V

1.025GHz ~ 1.15GHz

-

6.5dB

1000W

15 @ 1A, 5V

28A

250°C (TJ)

Chassis Mount

M216

MS1051

Microsemi Corporation

TRANS RF BIPO 290W 20A M174

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 11dB ~ 13dB
Power - Max: 290W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5mA, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M174
Supplier Device Package: M174

Package: M174

Stock6,624

18V

30MHz

-

11dB ~ 13dB

290W

10 @ 5mA, 5V

20A

200°C (TJ)

Chassis Mount

M174

MRF586

Microsemi Corporation

TRANS RF BIPO 1W 200MA TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 17V
Frequency - Transition: 3GHz
Noise Figure (dB Typ @ f): -
Gain: 13.5dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

Package: TO-205AD, TO-39-3 Metal Can

Stock11,112

17V

3GHz

-

13.5dB

1W

40 @ 50mA, 5V

200mA

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

MRF545

Microsemi Corporation

TRANS RF BIPO 3.5W 400MA TO39

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: 1GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 14dB
Power - Max: 3.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 6V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

Package: TO-205AD, TO-39-3 Metal Can

Stock3,168

70V

1GHz ~ 1.4GHz

-

14dB

3.5W

15 @ 50mA, 6V

400mA

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

0912-25

Microsemi Corporation

TRANS RF BIPO 125W 2.5A 55CT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB ~ 10dB
Power - Max: 125W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Current - Collector (Ic) (Max): 2.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CT
Supplier Device Package: 55CT

Package: 55CT

Stock3,328

55V

960MHz ~ 1.215GHz

-

8.5dB ~ 10dB

125W

10 @ 300mA, 5V

2.5A

200°C (TJ)

Chassis Mount

55CT

MS2472

Microsemi Corporation

TRANS RF BIPO 1350W 40A M112

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 5.6dB
Power - Max: 1350W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V
Current - Collector (Ic) (Max): 40A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M112
Supplier Device Package: M112

Package: M112

Stock2,864

65V

1.025GHz ~ 1.15GHz

-

5.6dB

1350W

5 @ 250mA, 5V

40A

200°C (TJ)

Chassis Mount

M112

MRF581AG

Microsemi Corporation

TRANS RF NPN 5GHZ 15V MACR0 X

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Macro-X
Supplier Device Package: Macro-X

Package: Macro-X

Stock5,744

15V

5GHz

3dB ~ 3.5dB @ 500MHz

13dB ~ 15.5dB

1.25W

90 @ 50mA, 5V

200mA

150°C (TJ)

Surface Mount

Macro-X

MRF5812GR1

Microsemi Corporation

TRANS NPN 15V 200MA 8-SOIC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock12,312

15V

5GHz

2dB ~ 3dB @ 500MHz

13dB ~ 15.5dB

1.25W

50 @ 50mA, 5V

200mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MRF5812GR2

Microsemi Corporation

TRANS NPN 15V 200MA 8-SOIC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,320

15V

5GHz

2dB ~ 3dB @ 500MHz

13dB ~ 15.5dB

1.25W

50 @ 50mA, 5V

200mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MRF904

Microsemi Corporation

TRANS NPN 15V 30MA TO-72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 4GHz
Noise Figure (dB Typ @ f): 1.5dB @ 450MHz
Gain: 6.5dB ~ 10.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

Package: TO-206AF, TO-72-4 Metal Can

Stock12,960

15V

4GHz

1.5dB @ 450MHz

6.5dB ~ 10.5dB

200mW

30 @ 5mA, 5V

30mA

200°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

MRF581G

Microsemi Corporation

TRANS NPN 18V 200MA MACRO X

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Micro-X ceramic (84C)
Supplier Device Package: Micro-X ceramic (84C)

Package: Micro-X ceramic (84C)

Stock250,548

18V

5GHz

3dB ~ 3.5dB @ 500MHz

13dB ~ 15.5dB

1.25W

50 @ 50mA, 5V

200mA

150°C (TJ)

Surface Mount

Micro-X ceramic (84C)

MRF581A

Microsemi Corporation

TRANS NPN 15V 200MA MACRO X

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Micro-X ceramic (84C)
Supplier Device Package: Micro-X ceramic (84C)

Package: Micro-X ceramic (84C)

Stock48,072

15V

5GHz

3dB ~ 3.5dB @ 500MHz

13dB ~ 15.5dB

1.25W

90 @ 50mA, 5V

200mA

150°C (TJ)

Surface Mount

Micro-X ceramic (84C)

MRF581

Microsemi Corporation

TRANS NPN 18V 200MA MACRO X

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Micro-X ceramic (84C)
Supplier Device Package: Micro-X ceramic (84C)

Package: Micro-X ceramic (84C)

Stock5,808

18V

5GHz

3dB ~ 3.5dB @ 500MHz

13dB ~ 15.5dB

1.25W

50 @ 50mA, 5V

200mA

150°C (TJ)

Surface Mount

Micro-X ceramic (84C)

MRF559G

Microsemi Corporation

TRANS NPN 16V 150MA MACRO X

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 870MHz
Noise Figure (dB Typ @ f): -
Gain: 9.5dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Micro-X ceramic (84C)
Supplier Device Package: Micro-X ceramic (84C)

Package: Micro-X ceramic (84C)

Stock4,992

16V

870MHz

-

9.5dB

2W

30 @ 50mA, 10V

150mA

-

Surface Mount

Micro-X ceramic (84C)