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1PMT5923BT1

1PMT5923BT1

1PMT5923BT1

For Reference Only

Part Number 1PMT5923BT1
Manufacturer ON Semiconductor
Description DIODE ZENER 8.2V 3.2W POWERMITE
Datasheet 1PMT5923BT1 Datasheet
Package DO-216AA
In Stock 300 piece(s)
Unit Price Request a Quote
Lead Time To be Confirmed
Estimated Delivery Time Jul 6 - Jul 11 (Choose Expedited Shipping)
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Part Number # 1PMT5923BT1 (Diodes - Zener - Single) is manufactured by ON Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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1PMT5923BT1 Specifications

ManufacturerON Semiconductor
CategoryDiscrete Semiconductor Products - Diodes - Zener - Single
Datasheet 1PMT5923BT1Datasheet
PackageDO-216AA
Series-
Voltage - Zener (Nom) (Vz)8.2V
Tolerance±5%
Power - Max3.2W
Impedance (Max) (Zzt)3.5 Ohms
Current - Reverse Leakage @ Vr5µA @ 6.5V
Voltage - Forward (Vf) (Max) @ If1.25V @ 200mA
Operating Temperature-55°C ~ 150°C
Mounting TypeSurface Mount
Package / CaseDO-216AA
Supplier Device PackagePowermite

1PMT5923BT1 Datasheet

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© Semiconductor Components Industries, LLC, 2005 July, 2005 − Rev. 3 1 Publication Order Number: 1PMT5920B/D 1PMT5920B Series 3.2 Watt Plastic Surface Mount POWERMITE® Package This complete new line of 3.2 Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat sink design. The POWERMITE package has the same thermal performance as the SMA while being 50% smaller in footprint area and delivering one of the lowest height profiles (1.1 mm) in the industry. Because of its small size, it is ideal for use in cellular phones, portable devices, business machines and many other industrial/consumer applications. Features • Zener Breakdown Voltage: 6.2 − 47 V • DC Power Dissipation: 3.2 W with Tab 1 (Cathode) @ 75°C • Low Leakage < 5 A • ESD Rating of Class 3 (> 16 kV) per Human Body Model • Low Profile − Maximum Height of 1.1 mm • Integral Heat Sink/Locking Tabs • Full Metallic Bottom Eliminates Flux Entrapment • Small Footprint − Footprint Area of 8.45 mm2 • Supplied in 12 mm Tape and Reel T1 = 3,000 Units per Reel T3 = 12,000 Units per Reel • Lead Orientation in Tape: Cathode (Short) Lead to Sprocket Holes • POWERMITE is JEDEC Registered as DO−216AA • Cathode Indicated by Polarity Band • Pb−Free Packages are Available Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MOUNTING POSITION: Any MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES 6.2 − 47 VOLTS Device Package Shipping† ORDERING INFORMATION 1PMT59xxBT1 POWERMITE 3,000/Tape&Reel 1 2 1: CATHODE 2: ANODE POWERMITE CASE 457 PLASTIC 1 2 MARKING DIAGRAM 1 CATHODE 2 ANODE 1PMT59xxBT3 POWERMITE 12,000/Tape&Reel http://onsemi.com Individual devices are listed on page 2 of this data sheet. 1PMT59xxBT1G POWERMITE (Pb−Free) 3,000/Tape&Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1PMT59xxBT3G POWERMITE (Pb−Free) 12,000/Tape&Reel M = Date Code xxB = Specific Device Code (See Table on Page 2)  = Pb−Free Package xxB  M

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Zener Voltage Regulator IF V I IR IZT VRVZ VF 1PMT5920B Series http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit DC Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction−to−Ambient °PD° RJA 500 4.0 248 °mW mW/°C °C/W Thermal Resistance, Junction−to−Lead (Anode) RJanode 35 °C/W Maximum DC Power Dissipation (Note 2) Thermal Resistance from Junction−to−Tab (Cathode) °PD° RJcathode 3.2 23 W °C/W Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Mounted with recommended minimum pad size, PC board FR−4. 2. At Tab (Cathode) temperature, Ttab = 75°C ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted, VF = 1.5 V Max. @ IF = 200 mAdc for all types) Symbol Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.25 Volts @ 200 mA) Device* Device Marking Zener Voltage (Note 3) IZT IR @ VR VR ZZT @ IZT (Note 4) ZZK @ IZK (Note 4) IZKVZ @ IZT (Volts) Min Nom Max (mA) (A) (V) () () (mA) 1PMT5920BT1, T3,G 20B 5.89 6.2 6.51 60.5 5.0 4.0 2.0 200 1.0 1PMT5921BT1, T3,G 21B 6.46 6.8 7.14 55.1 5.0 5.2 2.5 200 1.0 1PMT5922BT1, T3,G 22B 7.12 7.5 7.88 50 5.0 6.0 3.0 400 0.5 1PMT5923BT1, T3,G 23B 7.79 8.2 8.61 45.7 5.0 6.5 3.5 400 0.5 1PMT5924BT1, T3,G 24B 8.64 9.1 9.56 41.2 5.0 7.0 4.0 500 0.5 1PMT5925BT1, T3,G 25B 9.5 10 10.5 37.5 5.0 8.0 4.5 500 0.25 1PMT5927BT1, T3,G 27B 11.4 12 12.6 31.2 1.0 9.1 6.5 550 0.25 1PMT5929BT1, T3,G 29B 14.25 15 15.75 25 1.0 11.4 9.0 600 0.25 1PMT5930BT1, T3,G 30B 15.2 16 16.8 23.4 1.0 12.2 10 600 0.25 1PMT5931BT1, T3,G 31B 17.1 18 18.9 20.8 1.0 13.7 12 650 0.25 1PMT5933BT1, T3,G 33B 20.9 22 23.1 17 1.0 16.7 17.5 650 0.25 1PMT5934BT1, T3,G 34B 22.8 24 25.2 15.6 1.0 18.2 19 700 0.25 1PMT5935BT1, T3,G 35B 25.65 27 28.35 13.9 1.0 20.6 23 700 0.25 1PMT5936BT1, T3,G 36B 28.5 30 31.5 12.5 1.0 22.8 28 750 0.25 1PMT5939BT1, T3,G 39B 37.05 39 40.95 9.6 1.0 29.7 45 900 0.25 1PMT5941BT1, T3,G 41B 44.65 47 49.35 8.0 1.0 35.8 67 1000 0.25 3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25°C. 4. Zener Impedance Derivation ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz. * The “G” suffix indicates Pb−Free package available.

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1PMT5920B Series http://onsemi.com 3 TYPICAL CHARACTERISTICS 7 5 3 2 Figure 1. Steady State Power Derating Figure 2. VZ to 10 Volts 25 50 75 100 125 175 3.5 2.5 2 1.5 1 0 T, TEMPERATURE (°C) P , M A X IM U M P O W E R D IS S IP A T IO N ( W ) D 0.1 5 6 9 10 VZ, ZENER VOLTAGE (VOLTS) 0.5 TL 2 4 6 8 10 12 10 8 6 4 2 0 −2 −4 VZ, ZENER VOLTAGE (VOLTS) VZ @ IZT 200 100 70 50 30 20 10 10 20 30 50 70 100 200 VZ, ZENER VOLTAGE (VOLTS) VZ @ IZT 150 3 7 8 11 1 10 100 I Z , Z E N E R C U R R E N T ( m A ) Figure 3. VZ = 12 thru 47 Volts 0 10 20 30 40 50 60 70 80 90 100 VZ, ZENER VOLTAGE (VOLTS) I , Z E N E R C U R R E N T ( m A ) Z 100 50 30 20 10 1 0.5 0.3 0.2 0.1 2 5 3 Figure 4. Zener Voltage − To 12 Volts Figure 5. Zener Voltage − 14 To 47 Volts Figure 6. Effect of Zener Voltage VZ, ZENER VOLTAGE (VOLTS) 5 7 10 20 30 50 70 100 200 100 70 50 30 20 10 Z , D Y N A M IC I M P E D A N C E ( O H M S ) Z IZ(dc) = 1mA 20 mA iZ(rms) = 0.1 IZ(dc) 10 mA  V Z , T E M P E R A T U R E C O E F F IC IE N T ( m V /° C )  V Z , T E M P E R A T U R E C O E F F IC IE N T ( m V /° C )

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1PMT5920B Series http://onsemi.com 4 Figure 7. Effect of Zener Current IZ, ZENER TEST CURRENT (mA) 1 k 500 200 100 50 20 10 5 2 1 0.5 1 2 5 10 20 50 100 200 500 Z , D Y N A M IC I M P E D A N C E ( O H M S ) Z TJ = 25°C iZ(rms) = 0.1 IZ(dc) 22 V 12 V 6.8 V 10,000 1000 100 10 1 10 VZ, REVERSE ZENER VOLTAGE (VOLTS) C , C A P A C IT A N C E ( p F ) MEASURED @ 50% VR MEASURED @ 0 V BIAS Figure 8. Capacitance versus Reverse Zener Voltage 100

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1PMT5920B Series http://onsemi.com 5 OUTLINE DIMENSIONS DIM MIN MAX MIN MAX INCHESMILLIMETERS A 1.75 2.05 0.069 0.081 B 1.75 2.18 0.069 0.086 C 0.85 1.15 0.033 0.045 D 0.40 0.69 0.016 0.027 F 0.70 1.00 0.028 0.039 H −0.05 +0.10 −0.002 +0.004 J 0.10 0.25 0.004 0.010 K 3.60 3.90 0.142 0.154 L 0.50 0.80 0.020 0.031 R 1.20 1.50 0.047 0.059 S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. SBM0.08 (0.003) C ST −A− −B− S J K −T− H L J C D SBM0.08 (0.003) C ST F TERM. 1 TERM. 2 R 0.50 REF 0.019 REF POWERMITE CASE 457−04 ISSUE D *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* 2.54 0.100 0.635 0.025 1.27 0.050 2.67 0.105 0.762 0.030  mm inches SCALE 10:1

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