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2N7000

hot 2N7000

2N7000

For Reference Only

Part Number 2N7000
Manufacturer Fairchild/ON Semiconductor
Description MOSFET N-CH 60V 200MA TO-92
Datasheet 2N7000 Datasheet
Package TO-226-3, TO-92-3 (TO-226AA)
In Stock 1336120 piece(s)
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2N7000

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2N7000 Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet 2N7000 Datasheet
PackageTO-226-3, TO-92-3 (TO-226AA)
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25��C200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
Vgs (Max)��20V
Power Dissipation (Max)400mW (Ta)
Rds On (Max) @ Id, Vgs5 Ohm @ 500mA, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA)

2N7000 Datasheet

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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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2N 7000 / 2N 7002 / N D S 7002A — N -C h an n el E n h a n cem en t M o d e F ield E ffect Tran sisto r © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N7000 / 2N7002 / NDS7002A Rev. 2.10 1 August 2016 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features • High Density Cell Design for Low RDS(ON) • Voltage Controlled Small Signal Switch • Rugged and Reliable • High Saturation Current Capability Ordering Information Part Number Marking Package Packing Method Min Order Qty / Immediate Pack Qty 2N7000 2N7000 TO-92 3L Bulk 10000 / 1000 2N7000_D74Z 2N7000 TO-92 3L Ammo 2000 / 2000 2N7000_D75Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000 2N7000_D26Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000 2N7002 702 SOT-23 3L Tape and Reel 3000 / 3000 NDS7002A 712 SOT-23 3L Tape and Reel 3000 / 3000 Description These N-channel enhancement mode field effect transis- tors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-cur- rent applications, such as small servo motor control, power MOSFET gate drivers, and other switching appli- cations. 1. Source 2. Gate 3. Drain TO-921 2N7002/NDS7002A S D G SOT-23 (TO-236AB) S D G

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2N 7000 / 2N 7002 / N D S 7002A — N -C h an n el E n h a n cem en t M o d e F ield E ffect Tran sisto r © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N7000 / 2N7002 / NDS7002A Rev. 2.10 2 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Thermal Characteristics Values are at TC = 25°C unless otherwise noted. Electrical Characteristics Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value Unit 2N7000 2N7002 NDS7002A VDSS Drain-to-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS ≤ 1 M 60 V VGSS Gate-Source Voltage - Continuous ±20 V Gate-Source Voltage - Non Repetitive (tp < 50 S) ±40 ID Maximum Drain Current - Continuous 200 115 280 mA Maximum Drain Current - Pulsed 500 800 1500 PD Maximum Power Dissipation Derated above 25°C 400 200 300 mW 3.2 1.6 2.4 mW/°C TJ, TSTG Operating and Storage Temperature Range -55 to 150 -65 to 150 °C TL Maximum Lead Temperature for Soldering Purposes, 1/16-inch from Case for 10 Seconds 300 °C Symbol Parameter Value Unit 2N7000 2N7002 NDS7002A RJA Thermal Resistance, Junction to Ambient 312.5 625 417 °C/W Symbol Parameter Conditions Type Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 A All 60 V IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 2N7000 1 A VDS = 48 V, VGS = 0 V, TC = 125°C 1 mA VDS = 60 V, VGS = 0 V 2N7002 NDS7002A 1 A VDS = 60 V, VGS = 0 V, TC = 125°C 0.5 mA IGSSF Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V 2N7000 10 nA VGS = 20 V, VDS = 0 V 2N7002 NDS7002A 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -15 V, VDS = 0 V 2N7000 -10 nA VGS = -20 V, VDS = 0 V 2N7002 NDS7002A -100 nA

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2N 7000 / 2N 7002 / N D S 7002A — N -C h an n el E n h a n cem en t M o d e F ield E ffect Tran sisto r © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N7000 / 2N7002 / NDS7002A Rev. 2.10 3 Electrical Characteristics (Continued) Symbol Parameter Conditions Type Min. Typ. Max. Unit On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 2N7000 0.8 2.1 3 V VDS = VGS, ID = 250 A 2N7002 NDS7002A 1 2.1 2.5 RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA 2N7000 1.2 5  VGS = 10 V, ID = 500 mA, TC = 125°C 1.9 9 VGS = 4.5 V, ID = 75 mA 1.8 5.3 VGS = 10 V, ID = 500 mA 2N7002 1.2 7.5 VGS = 10 V, ID = 500 mA, TC = 100°C 1.7 13.5 VGS = 5 V, ID = 50 mA 1.7 7.5 VGS = 5 V, ID = 50 mA, TC = 100°C 2.4 13.5 VGS = 10 V, ID = 500 mA NDS7002A 1.2 2 VGS = 10 V, ID = 500 mA, TC = 125°C 2 3.5 VGS = 5 V, ID = 50 mA 1.7 3 VGS = 5 V, ID = 50 mA, TC = 125°C 2.8 5 VDS(ON) Drain-Source On-Voltage VGS = 10 V, ID = 500 mA 2N7000 0.6 2.5 V VGS = 4.5 V, ID = 75 mA 0.14 0.4 VGS = 10 V, ID = 500 mA 2N7002 0.6 3.75 VGS = 5.0 V, ID = 50 mA 0.09 1.5 VGS = 10 V, ID = 500 mA NDS7002A 0.6 1 VGS = 5.0 V, ID = 50 mA 0.09 0.15 ID(ON) On-State Drain Current VGS = 4.5 V, VDS = 10 V 2N7000 75 600 mA VGS = 10 V, VDS  2 VDS(on) 2N7002 500 2700 VGS = 10 V, VDS  2 VDS(on) NDS7002A 500 2700 gFS Forward Transconductance VDS= 10 V, ID = 200 mA 2N7000 100 320 mS VDS 2VDS(ON), ID = 200 mA 2N7002 80 320 VDS 2VDS(ON), ID = 200 mA NDS7002A 80 320

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2N 7000 / 2N 7002 / N D S 7002A — N -C h an n el E n h a n cem en t M o d e F ield E ffect Tran sisto r © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N7000 / 2N7002 / NDS7002A Rev. 2.10 4 Electrical Characteristics (Continued) Note: 1. Pulse test : Pulse Width ≤ 300 μs, Duty Cycel ≤ 2 %. Symbol Parameter Conditions Type Min. Typ. Max. Unit Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz All 20 50 pF Coss Output Capacitance All 11 25 Crss Reverse Transfer Capacitance All 4 5 ton Turn-On Time VDD = 15 V, RL = 25 , ID = 500 mA, VGS= 10 V, RGEN = 25 2N7000 10 ns VDD = 30 V, RL = 150 , ID = 200 mA, VGS= 10 V, RGEN = 25 2N7002 NDS7002A 20 toff Turn-Off Time VDD = 15 V, RL = 25 , ID = 500 mA, VGS= 10 V, RGEN = 25 2N7000 10 ns VDD = 30 V, RL = 150 , ID = 200 mA, VGS= 10 V, RGEN = 25 2N7002 NDS7002A 20 Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current 2N7002 115 mA NDS7002A 280 ISM Maximum Pulsed Drain-Source Diode Forward Current 2N7002 0.8 A NDS7002A 1.5 VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 115 mA (1) 2N7002 0.88 1.5 V VGS = 0 V, IS = 400 mA (1) NDS7002A 0.88 1.2

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2N 7000 / 2N 7002 / N D S 7002A — N -C h an n el E n h a n cem en t M o d e F ield E ffect Tran sisto r © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N7000 / 2N7002 / NDS7002A Rev. 2.10 5 Typical Performance Characteristics 2N7000 / 2N7002 / NDS7002A 0 1 4 5 0 0.5 1 1.5 2 V 2 3 , DRAIN-SOURCE VOLTAGE (V I , D R A IN -S O U R C E C U R R E N T ( A ) 9.0 4.0 8.0 3.0 7.0 = 10VVGS DS D 5.0 6.0 -50 -25 0 25 50 75 100 125 150 0.5 0.75 1 1.25 1.5 1.75 2 T , JUNCTION TEMPERATURE (°C) J V GS = 10V DI = 500m A -50 -25 0 25 50 75 100 125 150 0.8 0.85 0.9 0.95 1 1.05 1.1 T , JUNCTION TEM PERATURE (°C) th V , N D J DI = 1 m A DSV = VGS 0 0.4 0.8 1.2 1.6 2 0.5 1 1.5 2 2.5 3 I , DRA IN CURRENT (A) GSV =4.0V D 7.0 4.5 10 5.0 6.0 9.0 8.0 0 0.4 0.8 1.2 1.6 2 0 0.5 1 1.5 2 2.5 3 I , DRAIN CURRENT (A) J T = 125°C 25°C -55°C D V GS Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Drain Current and Temperature Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature 0 2 8 10 0 0.4 0.8 1.2 1.6 2 4 6 , GATE TO SOURCE VOLTAGE (VV V = 10 DS GS JT = -55°C 25°C 125°C D S (o n ) R , N O R M A L IZ E D D R A IN -S O U R C E O N -R E S IS T A N C E D S (o n ) R , N O R M A L IZ E D D R A IN -S O U R C E O N -R E S IS T A N C E D S (o n ) R , N O R M A L IZ E D D R A IN -S O U R C E O N -R E S IS T A N C E D

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2N 7000 / 2N 7002 / N D S 7002A — N -C h an n el E n h a n cem en t M o d e F ield E ffect Tran sisto r © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N7000 / 2N7002 / NDS7002A Rev. 2.10 6 Typical Performance Characteristics (Continued) 2N7000 / 2N7002 / NDS7002A -50 -25 0 25 50 75 100 125 150 0.925 0.95 0.975 1 1.025 1.05 1.075 1.1 T , JUNCTION TEM PERATURE (°C) B V N O R M A L IZ E D D R A IN -S O U R C E B R E A K D O W N V O L T A G E J D I = 250µA 0.2 0.4 1.4 0.001 0.005 0.01 0.05 0.1 0.5 1 2 V 0.6 0.8 1 1.2 , BODY DIODE FORWARD VOLTAGE (V) SI , R E V E R S E D R A IN C U R R E N T ( A ) VGS JT = 125°C SD 25°C -55°C 0 0.4 1.6 2 0 2 4 6 8 10 0.8 1.2 gQ , ATE CHARGE (nC) V , G A E -S O U R C E V O L T A G E ( V ) V G S DI =500m A DSV = 25V 115m A 280m A 1 2 3 30 50 1 2 5 10 20 40 60 5 10 20 V DS , DRAIN TO SOURCE VOLTAGE (V) C A P A C IT A N C E ( p F ) C iss f = 1 MHz GSV = 0V C oss C rss G D S VDD R LV V IN OUT VGS DUT R GEN 10% 50% 90% 10% 90% 90% 50%Input, Vin Output, Vout t on toff td(off) t ftrt d(on) Inverted 10% Pulse Width Figure 7. Breakdown Voltage Variation with Temperature Figure 8. Body Diode Forward Voltage Variation with Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics Figure 11. Figure 12. Switching Waveforms 0. .

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2N 7000 / 2N 7002 / N D S 7002A — N -C h an n el E n h a n cem en t M o d e F ield E ffect Tran sisto r © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N7000 / 2N7002 / NDS7002A Rev. 2.10 7 Typical Performance Characteristics (Continued) 0.0001 0.10.001 0.01 1 10 100 300 0.001 0.002 0.01 0.05 0.1 0.2 0.5 1 1t , TIME (sec) r( t) , N O R M A L IZ E D E F F E C T IV E T R A N S IE N T T H E R M A L R E S IS TA N C E 0.0001 0.10.001 0.01 1 10 100 300 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) r( t) , N O R M A L IZ E D E F F E C T IV E T R A N S IE N T T H E R M A L R E S IS TA N C E 1 Figure 16. TO-92, 2N7000 Transient Thermal Response Curve Figure 13. 2N7000 Maximum Safe Operating Area Figure 14. 2N7002 Maximum Safe Operating Area Figure 15. NDS7000A Maximum Safe Operating Area Figure 1 . R Duty Cy, cle R = (See Datasheet) P(pk) t1 t 2 TJ - TA = P * (t) = (See Datasheet) R TJ - TA = P * (t) Duty Cy, cle

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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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