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2N7000

hot 2N7000

2N7000

For Reference Only

Part Number 2N7000
Manufacturer Fairchild/ON Semiconductor
Description MOSFET N-CH 60V 200MA TO-92
Datasheet 2N7000 Datasheet
Package TO-226-3, TO-92-3 (TO-226AA)
In Stock 1336120
Quota Limit No Limit
Lead Time Can Ship Immediately
Estimated Delivery Time Jul 26 - Jul 31 (Choose Expedited Shipping)

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2N7000

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2N7000 Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet 2N7000 Datasheet
PackageTO-226-3, TO-92-3 (TO-226AA)
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25��C200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
Vgs (Max)��20V
Power Dissipation (Max)400mW (Ta)
Rds On (Max) @ Id, Vgs5 Ohm @ 500mA, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA)

2N7000 Datasheet

2N7000 Related Products

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hot2N7000 2N3416 Fairchild/ON Semiconductor, TRANS NPN 50V 0.5A TO-92, Package:TO-226-3, TO-92-3 (TO-226AA), Series:- , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):60V, Current - Continuous Drain (Id) @ 25��C:200mA (Ta), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:3V @ 1mA, Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V, Vgs (Max):��20V, Power Dissipation (Max):400mW (Ta), Rds On (Max) @ Id, Vgs:5 Ohm @ 500mA, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-92-3, Package / Case:TO-226-3, TO-92-3 (TO-226AA)
hot2N7000 2N5087RLRAG ON Semiconductor, TRANS PNP 50V 0.05A TO92, Package:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Series:- , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):60V, Current - Continuous Drain (Id) @ 25��C:200mA (Ta), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:3V @ 1mA, Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V, Vgs (Max):��20V, Power Dissipation (Max):400mW (Ta), Rds On (Max) @ Id, Vgs:5 Ohm @ 500mA, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-92-3, Package / Case:TO-226-3, TO-92-3 (TO-226AA)
hot2N7000 2N5550 ON Semiconductor, TRANS NPN 140V 0.6A TO92, Package:TO-226-3, TO-92-3 (TO-226AA), Series:- , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):60V, Current - Continuous Drain (Id) @ 25��C:200mA (Ta), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:3V @ 1mA, Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V, Vgs (Max):��20V, Power Dissipation (Max):400mW (Ta), Rds On (Max) @ Id, Vgs:5 Ohm @ 500mA, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-92-3, Package / Case:TO-226-3, TO-92-3 (TO-226AA)
hot2N7000 2N3486A Microsemi Corporation, TRANS PNP 60V 0.6A TO-46, Package:TO-206AB, TO-46-3 Metal Can, Series:- , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):60V, Current - Continuous Drain (Id) @ 25��C:200mA (Ta), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:3V @ 1mA, Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V, Vgs (Max):��20V, Power Dissipation (Max):400mW (Ta), Rds On (Max) @ Id, Vgs:5 Ohm @ 500mA, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-92-3, Package / Case:TO-226-3, TO-92-3 (TO-226AA)
hot2N7000 2N5087 Fairchild/Micross Components, DIE TRANS PNP 50V SMALL SIGNAL, Package:-, Series:- , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):60V, Current - Continuous Drain (Id) @ 25��C:200mA (Ta), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:3V @ 1mA, Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V, Vgs (Max):��20V, Power Dissipation (Max):400mW (Ta), Rds On (Max) @ Id, Vgs:5 Ohm @ 500mA, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-92-3, Package / Case:TO-226-3, TO-92-3 (TO-226AA)
hot2N7000 2N5655G ON Semiconductor, TRANS NPN 250V 0.5A TO225AA, Package:TO-225AA, TO-126-3, Series:- , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):60V, Current - Continuous Drain (Id) @ 25��C:200mA (Ta), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:3V @ 1mA, Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V, Vgs (Max):��20V, Power Dissipation (Max):400mW (Ta), Rds On (Max) @ Id, Vgs:5 Ohm @ 500mA, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-92-3, Package / Case:TO-226-3, TO-92-3 (TO-226AA)

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