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2SJ162-E

2SJ162-E

2SJ162-E

For Reference Only

Part Number 2SJ162-E
Manufacturer Renesas Electronics America
Description MOSFET P-CH 160V 7A TO-3P
Datasheet 2SJ162-E Datasheet
Package TO-3P-3, SC-65-3
In Stock 121 piece(s)
Unit Price Request a Quote
Lead Time To be Confirmed
Estimated Delivery Time Nov 23 - Nov 28 (Choose Expedited Shipping)
Price Reference (USD)
Price BreakUnit Price
1$4.0500
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2SJ162-E

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2SJ162-E Specifications

ManufacturerRenesas Electronics America
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet 2SJ162-E Datasheet
PackageTO-3P-3, SC-65-3
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)160V
Current - Continuous Drain (Id) @ 25��C7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Input Capacitance (Ciss) (Max) @ Vds900pF @ 10V
Vgs (Max)��15V
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

2SJ162-E Datasheet

Page 1

Page 2

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry.

Page 3

Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. 4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and “Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. “Standard”: Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti- crime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority- owned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.

Page 4

Rev.2.00 Sep 07, 2005 page 1 of 5 2SJ160, 2SJ161, 2SJ162 Silicon P Channel MOS FET REJ03G0847-0200 (Previous: ADE-208-1182) Rev.2.00 Sep 07, 2005 Description Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable for audio power amplifier Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1. Gate 2. Source (Flange) 3. Drain D G S 1 2 3

Page 5

2SJ160, 2SJ161, 2SJ162 Rev.2.00 Sep 07, 2005 page 2 of 5 Absolute Maximum Ratings (Ta = 25° C) Item Symbol Value Unit 2SJ160 –120 2SJ161 –140 Drain to source voltage 2SJ162 VDSX –160 V Gate to source voltage VGSS ± 15 V Drain current ID –7 A Body to drain diode reverse drain current IDR –7 A Channel dissipation Pch Note 1 100 W Channel temperature Tch 150 ° C Storage temperature Tstg –55 to +150 ° C Note: 1. Value at Tc = 25° C Electrical Characteristics (Ta = 25° C) Item Symbol Min Typ Max Unit Test Conditions 2SJ160 –120 — — V 2SJ161 –140 — — V Drain to source breakdown voltage 2SJ162 V (BR) DSX –160 — — V ID = –10 mA, VGS = 10 V Gate to source breakdown voltage V (BR) GSS ± 15 — — V IG = ± 100 µ A, VDS = 0 Gate to source cutoff voltage VGS (off) –0.15 — –1.45 V ID = –100 mA, VDS = –10 V Drain to source saturation voltage VDS (sat) — — –12 V ID = –7 A, VGS = 0 Note 2 Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = –3 A, VDS = –10 V Note 2 Input capacitance Ciss — 900 — pF Output capacitance Coss — 400 — pF Reverse transfer capacitance Crss — 40 — pF VGS = 5 V, VDS = –10 V, f = 1 MHz Turn-on time ton — 230 — ns Turn-off time toff — 110 — ns VDD = –20 V ID = –4 A Note: 2. Pulse test

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2SJ160, 2SJ161, 2SJ162 Rev.2.00 Sep 07, 2005 page 3 of 5 Main Characteristics C h a n n e l D is s ip a ti o n P c h (W ) Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) D ra in C u rr e n t I D ( A ) Typical Output Characteristics Gate to Source Voltage VGS (V) D ra in C u rr e n t I D ( A ) Typical Transfer Characteristics –10 0 –2 –4 –6 –8 0 –10 –20 –30 –40 –50 –1.0 0 –0.2 –0.4 –0.6 –0.8 0 –0.4 –0.8 –1.2 –1.6 –2.0 Tc = –25°C 75°C 75°C 150 0 50 100 0 50 100 150 VDS = –10 V –9 –1 V –2 –3 –4 –5 –6 –7 –8 VGS = 0 Drain to Source Voltage VDS (V) D ra in C u rr e n t I D ( A ) Maximum Safe Operation Area –5 –2 –1 –0.5 –0.2 –5 –10 –20 –50 –100 –200 –500 –20 –10 Ta = 25°C Tc = 25°C ID max (Continuous) (–14.3 V, –7 A) 2SJ160 2SJ161 2SJ162 (–120 V, –0.83 A) PW = 100 m s (1 shot) PW = 10 m s (1 shot) D C O peration (Tc = 25°C ) Gate to Source Voltage VGS (V) D ra in t o S o u rc e V o lt a g e V D S ( o n ) (V ) Drain to Source Voltage vs. Gate to Source Voltage –10 0 –2 –4 –6 –8 0 –2 –4 –6 –8 –10 Pulse Test ID = –1 A –2 A –5 A Drain Current ID (A) D ra in to S o u rc e S a tu ra tio n V o lta g e V D S ( sa t) (V ) Drain to Source Saturation Voltage vs. Drain Current –2 –1 –0.2 –0.5 –0.1 –0.5 –2 –5–0.1 –1 –10–0.2 –10 –5 VGD = 0 V Pch = 100 W Tc = –25°C 25°C (–140 V, –0.71 A) (–160 V, –0.63 A) 25°C

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2SJ160, 2SJ161, 2SJ162 Rev.2.00 Sep 07, 2005 page 4 of 5 1000 0 2 4 6 8 10 Gate to Source Voltage VGS (V) 100 200 500 In p u t C a p a c it a n c e C is s (p F ) Input Capacitance vs. Gate to Source Voltage VDS = –10 V f = 1 MHz F o rw a rd T ra n s fe r A d m it ta n c e |y fs | (S ) Forward Transfer Admittance vs. Frequency Frequency f (Hz) 3 1 0.1 0.3 0.03 0.003 0.01 10 k 30 k 100 k 300 k 1 M 3 M 10 M Tc = 25°C VDS = –10 V ID = –2 A Drain Current ID (A) S w it c h in g T im e t o n , t o ff (n s ) Switching Time vs. Drain Current –0.1 –0.2 –0.5 –1 –2 –5 –10 500 200 100 20 50 10 5 toff ton ton Input 90% 10% 10% Output toff 90% Input PW = 50 µs duty ratio = 1% RL –20 V Output 50 Ω Switching Time Test Circuit Waveform

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2SJ160, 2SJ161, 2SJ162 Rev.2.00 Sep 07, 2005 page 5 of 5 Package Dimensions φ3.2 ± 0.2 4.8 ± 0.2 1.5 0 .3 2.8 0.6 ± 0.21.0 ± 0.2 1 8 .0 ± 0 .5 1 9 .9 ± 0 .2 15.6 ± 0.3 0 .5 1 .0 5 .0 ± 0 .3 1.6 1.4 Max 2.0 2 .0 1 4 .9 ± 0 .2 3.6 0.9 1.0 5.45 ± 0.55.45 ± 0.5 Package Name PRSS0004ZE-A TO-3P / TO-3PV MASS[Typ.] 5.0gSC-65 RENESAS CodeJEITA Package Code Unit: mm Ordering Information Part Name Quantity Shipping Container 2SJ160-E 360 pcs Box (Tube) 2SJ161-E 360 pcs Box (Tube) 2SJ162-E 360 pcs Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.

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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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