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2SJ162-E

hot 2SJ162-E

2SJ162-E

For Reference Only

Part Number 2SJ162-E
Manufacturer Renesas Electronics America
Description MOSFET P-CH 160V 7A TO-3P
Datasheet 2SJ162-E Datasheet
Package TO-3P-3, SC-65-3
In Stock 3000
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Sep 19 - Sep 24 (Choose Expedited Shipping)
Price Reference (USD)
Price BreakUnit Price
1$4.0500

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2SJ162-E

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2SJ162-E Specifications

ManufacturerRenesas Electronics America
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet 2SJ162-E Datasheet
PackageTO-3P-3, SC-65-3
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)160V
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds900pF @ 10V
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

2SJ162-E Datasheet

2SJ162-E Guarantees

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Quality Guarantee

Quality Guarantees

We provide 30 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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hot2SJ162-E 2SA1428-Y(T2TR,A,F Toshiba Semiconductor and Storage, TRANS PNP 2A 50V SC71, Package:SC-71, Series:- , FET Type:P-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):160V, Current - Continuous Drain (Id) @ 25°C:7A (Ta), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs (Max):±15V, Input Capacitance (Ciss) (Max) @ Vds:900pF @ 10V, Power Dissipation (Max):100W (Tc), Operating Temperature:150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-3P, Package / Case:TO-3P-3, SC-65-3
hot2SJ162-E 2SD1012F-SPA ON Semiconductor, TRANS NPN 15V 0.7A SPA, Package:3-SIP, Series:- , FET Type:P-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):160V, Current - Continuous Drain (Id) @ 25°C:7A (Ta), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs (Max):±15V, Input Capacitance (Ciss) (Max) @ Vds:900pF @ 10V, Power Dissipation (Max):100W (Tc), Operating Temperature:150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-3P, Package / Case:TO-3P-3, SC-65-3
hot2SJ162-E 2SC5287 Sanken, TRANS NPN 550V 5A TO3P, Package:TO-3P-3, SC-65-3, Series:- , FET Type:P-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):160V, Current - Continuous Drain (Id) @ 25°C:7A (Ta), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs (Max):±15V, Input Capacitance (Ciss) (Max) @ Vds:900pF @ 10V, Power Dissipation (Max):100W (Tc), Operating Temperature:150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-3P, Package / Case:TO-3P-3, SC-65-3
hot2SJ162-E 2SC3646T-P-TD-E ON Semiconductor, TRANS NPN 100V 1A, Package:TO-243AA, Series:- , FET Type:P-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):160V, Current - Continuous Drain (Id) @ 25°C:7A (Ta), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs (Max):±15V, Input Capacitance (Ciss) (Max) @ Vds:900pF @ 10V, Power Dissipation (Max):100W (Tc), Operating Temperature:150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-3P, Package / Case:TO-3P-3, SC-65-3
hot2SJ162-E 2SC4135T-TL-E ON Semiconductor, TRANS NPN 100V 2A TP-FA, Package:TO-252-3, DPak (2 Leads + Tab), SC-63, Series:- , FET Type:P-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):160V, Current - Continuous Drain (Id) @ 25°C:7A (Ta), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs (Max):±15V, Input Capacitance (Ciss) (Max) @ Vds:900pF @ 10V, Power Dissipation (Max):100W (Tc), Operating Temperature:150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-3P, Package / Case:TO-3P-3, SC-65-3
hot2SJ162-E 2SCR375P5T100R Rohm Semiconductor, NPN 120V 1.5A MEDIUM POWER TRANS, Package:TO-243AA, Series:- , FET Type:P-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):160V, Current - Continuous Drain (Id) @ 25°C:7A (Ta), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs (Max):±15V, Input Capacitance (Ciss) (Max) @ Vds:900pF @ 10V, Power Dissipation (Max):100W (Tc), Operating Temperature:150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-3P, Package / Case:TO-3P-3, SC-65-3

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