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74AUP1G02SE-7

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74AUP1G02SE-7

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Part Number 74AUP1G02SE-7
Manufacturer Diodes Incorporated
Description IC GATE NOR 1CH 2-INP SOT-353
Datasheet 74AUP1G02SE-7 Datasheet
Package 5-TSSOP, SC-70-5, SOT-353
In Stock 15,600 piece(s)
Unit Price $ 0.1488 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 30 - Feb 4 (Choose Expedited Shipping)
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Part Number # 74AUP1G02SE-7 (Logic - Gates and Inverters) is manufactured by Diodes Incorporated and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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74AUP1G02SE-7 Specifications

ManufacturerDiodes Incorporated
CategoryIntegrated Circuits (ICs) - Logic - Gates and Inverters
Datasheet 74AUP1G02SE-7Datasheet
Package5-TSSOP, SC-70-5, SOT-353
Series74AUP
Logic TypeNOR Gate
Number of Circuits1
Number of Inputs2
Features-
Voltage - Supply0.8 V ~ 3.6 V
Current - Quiescent (Max)0.5µA
Current - Output High, Low4mA, 4mA
Logic Level - Low0.7 V ~ 0.9 V
Logic Level - High1.6 V ~ 2 V
Max Propagation Delay @ V, Max CL6.4ns @ 3.3V, 30pF
Operating Temperature-40°C ~ 125°C
Mounting TypeSurface Mount
Supplier Device PackageSOT-353
Package / Case5-TSSOP, SC-70-5, SOT-353

74AUP1G02SE-7 Datasheet

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74AUP1G02 Document number: DS35146 Rev. 5- 2 1 of 16 www.diodes.com February 2015 © Diodes Incorporated 74AUP1G02 SINGLE 2 INPUT POSITIVE NOR GATE Description The Advanced Ultra Low Power (AUP) CMOS logic family is designed for low power and extended battery life in portable applications. The 74AUP1G02 is a single, two-input, positive NOR gate with a standard push-pull output designed for operation over a power supply range of 0.8V to 3.6V. The device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing damaging current backflow when the device is powered down. The gate performs the positive Boolean function: BAY += or BAY •= Features • Advanced Ultra Low Power (AUP) CMOS • Supply Voltage Range from 0.8V to 3.6V • ±4mA Output Drive at 3.0V • Low Static Power Consumption ICC < 0.9µA • Low Dynamic Power Consumption CPD = 6.4pF (Typical at 3.6V) • Schmitt Trigger Action at all inputs makes the circuit tolerant for slower input rise and fall time. The hysteresis is typically 250 mV at Vcc = 3.0V. • IOFF Supports Partial-Power-Down Mode Operation • ESD Protection Exceeds JESD 22 2000-V Human Body Model (A114) Exceeds 1000-V Charged Device Model (C101) • Latch-Up Exceeds 100mA per JESD 78, Class I • Leadless Packages Named per JESD30E • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Pin Assignments Applications • Suited for Battery and Low Power Needs • Wide array of products such as:  Tablets, E-readers  Cell Phones, Personal Navigation / GPS  MP3 Players, Cameras, Video Recorders  PCs, Ultrabooks, Notebooks, Netbooks  Computer Peripherals, Hard Drives, SSDs CD/DVD ROMs  TVs, DVDs, DVRs, Set-Top Boxes Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

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74AUP1G02 Document number: DS35146 Rev. 5- 2 2 of 16 www.diodes.com February 2015 © Diodes Incorporated 74AUP1G02 Ordering Information 74AUP1G 02 XXX -7 Logic Device Function Package Packing 74 : Logic Prefix 02 : 2-Input SE : SOT353 -7 : 7” Tape & Reel AUP : 0.8 to 3.6 V NOR Gate FS3 : X2-DFN0808-4 Logic Family FW5 : X1-DFN1010-6 1G : One Gate FW4 :X2-DFN1010-6 FX4 : X2- DFN1409-6 FZ4 : X2- DFN1410-6 Device Package Code Package (Notes 4 & 5) Package Size 7” Tape and Reel Quantity Part Number Suffix 74AUP1G02SE-7 SE SOT353 2.0mm x 2.0mm x 1.1mm 0.65 mm lead pitch 3,000/Tape & Reel -7 74AUP1G02FS3-7 FS3 X2-DFN0808-4 0.8mm x 0.8mm x 0.35mm 0.5 mm pad pitch (diamond) 5,000/Tape & Reel -7 74AUP1G02FW5-7 FW5 X1-DFN1010-6 1.0mm x 1.0mm x 0.5mm 0.35 mm pad pitch 5,000/Tape & Reel -7 74AUP1G02FW4-7 FW4 X2-DFN1010-6 1.0mm x 1.0mm x 0.4mm 0.35 mm pad pitch 5,000/Tape & Reel -7 74AUP1G02FX4-7 FX4 X2-DFN1409-6 Chip Scale Alternative 1.4mm x 0.9mm x 0.4mm 0.5 mm pad pitch 5,000/Tape & Reel -7 74AUP1G02FZ4-7 FZ4 X2-DFN1410-6 1.4mm x 1.0mm x 0.4mm 0.5 mm pad pitch 5,000/Tape & Reel -7 Notes: 4. Pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 5. The taping orientation is located on our website at http://www.diodes.com/datasheets/ap02007.pdf. Pin Descriptions Pin Name Function A Data Input B Data Input GND Ground Y Data Output VCC Supply Voltage Logic Diagram Function Table Inputs Output A B Y L L H L H L H L L H H L 1 2 4 Y A B

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74AUP1G02 Document number: DS35146 Rev. 5- 2 3 of 16 www.diodes.com February 2015 © Diodes Incorporated 74AUP1G02 Absolute Maximum Ratings (Notes 6 & 7) (@TA = +25°C, unless otherwise specified.) Symbol Parameter Rating Unit ESD HBM Human Body Model ESD Protection 2 kV ESD CDM Charged Device Model ESD Protection 1 kV VCC Supply Voltage Range -0.5 to +4.6 V VI Input Voltage Range -0.5 to +4.6 V Vo Voltage Applied to Output in High or Low State -0.5 to VCC +0.5 V IIK Input Clamp Current VI < 0 50 mA IOK Output Clamp Current (VO < 0 ) 50 mA IO Continuous Output Current (VO = 0 to VCC) ±20 mA ICC Continuous Current through VCC 50 mA IGND Continuous Current through GND -50 mA TJ Operating Junction Temperature -40 to +150 °C TSTG Storage Temperature -65 to +150 °C Notes: 6. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should be within recommend values. 7. Forcing the maximum allowed voltage could cause a condition exceeding the maximum current or conversely forcing the maximum current could cause a condition exceeding the maximum voltage. The ratings of both current and voltage must be maintained within the controlled range. Recommended Operating Conditions (Note 8) (@TA = +25°C, unless otherwise specified.) Symbol Parameter Min Max Unit VCC Operating Voltage 0.8 3.6 V VI Input Voltage 0 3.6 V VO Output Voltage 0 VCC V IOH High-Level Output Current VCC = 0.8V — -20 µA VCC = 1.1V — -1.1 mA VCC = 1.4V — -1.7 VCC = 1.65V — -1.9 VCC = 2.3V — -3.1 VCC = 3.0V — -4 IOL Low-Level Output Current VCC = 0.8V — 20 µA VCC = 1.1V — 1.1 mA VCC = 1.4V — 1.7 VCC = 1.65V — 1.9 VCC = 2.3V — 3.1 VCC = 3.0V — 4 ∆t/∆V Input Transition Rise or Fall Rate VCC = 0.8V to 3.6V — 200 ns/V TA Operating Free-Air Temperature -40 +125 °C Note: 8. Unused inputs should be held at VCC or Ground.

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74AUP1G02 Document number: DS35146 Rev. 5- 2 4 of 16 www.diodes.com February 2015 © Diodes Incorporated 74AUP1G02 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Symbol Parameter Test Conditions VCC TA = +25°C TA = -40°C to +85°C Unit Min Max Min Max VIH High-Level Input Voltage — 0.8V to 1.65V 0.80 x VCC — 0.80 x VCC — V — 1.65V to 1.95V 0.65 x VCC — 0.65 x VCC — — 2.3V to 2.7V 1.6 — 1.6 — — 3.0 V to 3.6V 2.0 — 2.0 — VIL Low-Level Input Voltage — 0.8V to 1.65V — 0.30 x VCC — 0.30 x VCC V — 1.65V to 1.95V — 0.35 x VCC — 0.35 x VCC — 2.3V to 2.7V — 0.7 — 0.7 — 3.0V to 3.6V — 0.9 — 0.9 VOH High-Level Output Voltage IOH = -20µA 0.8V to 3.6V VCC – 0.1 — VCC – 0.1 — V IOH = -1.1mA 1.1V 0.75 x VCC — 0.7 x VCC — IOH = -1.7mA 1.4V 1.11 — 1.03 — IOH = -1.9mA 1.65V 1.32 — 1.3 — IOH = -2.3mA 2.3V 2.05 — 1.97 — IOH = -3.1mA 1.9 — 1.85 — IOH = -2.7mA 3V 2.72 — 2.67 — IOH = -4mA 2.6 — 2.55 — VOL Low-Level Output Voltage IOL = 20µA 0.8V to 3.6V — 0.1 — 0.1 V IOL = 1.1mA 1.1V — 0.3 x VCC — 0.3 x VCC IOL = 1.7mA 1.4V — 0.31 — 0.37 IOL = 1.9mA 1.65V — 0.31 — 0.35 IOL = 2.3mA 2.3V — 0.31 — 0.33 IOL = 3.1mA — 0.44 — 0.45 IOL = 2.7mA 3V — 0.31 — 0.33 IOL = 4 mA — 0.44 — 0.45 II Input Current A or B Input VI = GND to 3.6V 0 to 3.6V — ± 0.1 — ± 0.5 µA IOFF Power Down Leakage Current VI or VO = 0V to 3.6V 0 — 0.2 — 0.6 µA ∆IOFF Delta Power Down Leakage Current VI or VO = 0V to 3.6V 0V to 0.2V — 0.2 — 0.6 µA ICC Supply Current VI = GND or VCC, IO = 0 0.8V to 3.6V — 0.5 — 0.9 µA ∆ICC Additional Supply Current One Input at VCC -0.6V Other Inputs at VCC or GND 3.3V — 40 — 50 µA

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74AUP1G02 Document number: DS35146 Rev. 5- 2 5 of 16 www.diodes.com February 2015 © Diodes Incorporated 74AUP1G02 Electrical Characteristics (continued) (@TA = +25°C, unless otherwise specified.) Symbol Parameter Test Conditions VCC TA = -40°C to +125°C Unit Min Max VIH High-Level Input Voltage — 0.8V to 1.65V 0.80 x VCC — V — 1.65V to 1.95V 0.70 x VCC — — 2.3V to 2.7V 1.6 — — 3.0V to 3.6V 2.0 — VIL Low-Level Input Voltage — 0.8V to 1.65V — 0.25 x VCC V — 1.65V to 1.95V — 0.30 x VCC — 2.3V to 2.7V — 0.7 — 3.0V to 3.6V — 0.9 VOH High-Level Output Voltage IOH = -20 µA 0.8V to 3.6V VCC – 0.11 — V IOH = -1.1 mA 1.1V 0.6 x VCC — IOH = -1.7 mA 1.4V 0.93 — IOH = -1.9 mA 1.65V 1.17 — IOH = -2.3 mA 2.3V 1.77 — IOH = -3.1 mA 1.67 — IOH = -2.7 mA 3V 2.40 — IOH = -4 mA 2.30 — VOL Low-Level Output Voltage IOL = 20 µA 0.8V to 3.6V — 0.11 V IOL = 1.1 mA 1.1V — 0.33 x VCC IOL = 1.7 mA 1.4V — 0.41 IOL = 1.9 mA 1.65V — 0.39 IOL = 2.3 mA 2.3V — 0.36 IOL = 3.1 mA — 0.50 IOL = 2.7 mA 3V — 0.36 IOL = 4 mA — 0.50 II Input Current A or B Input VI =GND to 3.6V 0 to 3.6V — ± 0.75 µA IOFF Power Down Leakage Current VI or VO = 0V to 3.6V 0 — ± 3.5 µA ∆IOFF Delta Power Down Leakage Current VI or VO = 0V to 3.6V 0V to 0.2V — ± 2.5 µA ICC Supply Current VI = GND or VCC, IO = 0 0.8V to 3.6V — 3.0 µA ∆ICC Additional Supply Current Input at VCC -0.6V Other Inputs at VCC or GND 3.3V — 75 µA

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74AUP1G02 Document number: DS35146 Rev. 5- 2 6 of 16 www.diodes.com February 2015 © Diodes Incorporated 74AUP1G02 Switching Characteristics CL = 5pF, See Figure 1 Parameter From Input TO OUTPUT Vcc TA = +25°C TA = -40°C to +85°C TA = -40°C to +125°C Unit Min Typ Max Min Max Min Max tpd A or B Y 0.8V — 17.0 — — — — — ns 1.2V ± 0.1V 2.5 5.1 10.8 2.1 12.1 2.1 13.4 1.5V ± 0.1V 1.6 3.7 6.7 1.4 7.8 1.4 8.6 1.8V ± 0.15V 1.3 3.0 5.3 1.1 6.2 1.1 6.9 2.5V ± 0.2V 1.0 2.4 3.9 0.9 4.6 0.9 5.1 3.3V ± 0.3V 1.0 2.2 3.4 0.8 4.0 0.8 4.4 CL = 10pF, See Figure 1 Parameter From Input To Output VCC TA = +25°C TA = -40°C to +85°C TA = -40°C to +125°C Unit Min Typ Max Min Max Min Max tpd A or B Y 0.8V — 20.4 — — — — — ns 1.2V ± 0.1V 2.4 6.0 12.8 2.2 14.3 2.2 15.8 1.5V ± 0.1V 1.9 4.3 7.9 1.7 9.2 1.7 10.2 1.8V ± 0.15V 1.6 3.6 6.2 1.5 7.3 1.5 8.1 2.5V ± 0.2V 1.4 3.0 4.7 1.2 5.6 1.2 6.2 3.3 V ± 0.3V 1.3 2.7 4.2 1.2 5.0 1.2 5.5 CL = 15pF, See Figure 1 Parameter From Input To Output VCC TA = +25°C TA = -40°C to +85°C TA = -40°C to +125°C Unit Min Typ Max Min Max Min Max tpd A or B Y 0.8V — 23.9 — — — — — ns 1.2V ± 0.1V 3.4 6.8 14.6 3.1 16.4 3.1 18.1 1.5V ± 0.1V 2.3 4.8 8.9 2.0 10.4 2.0 11.5 1.8V ± 0.15V 1.9 4.0 7.0 1.7 8.3 1.7 9.2 2.5V ± 0.2V 1.7 3.4 5.4 1.5 6.3 1.5 7.0 3.3V ± 0.3V 1.6 3.2 4.8 1.4 5.7 1.4 6.3 CL = 30pF, See Figure 1 Parameter From Input To Output VCC TA = +25°C TA = -40°C to +85°C TA = -40°C to +125°C Unit Min Typ Max Min Max Min Max tpd A or B Y 0.8V — 34.2 — — — — — ns 1.2V ± 0.1V 4.6 19.0 22.0 4.1 22.4 4.1 24.7 1.5V ± 0.1V 3.4 6.4 11.8 2.9 13.9 2.9 15.3 1.8V ± 0.15V 2.6 5.3 9.3 2.3. 11.1 2.3. 12.3 2.5V ± 0.2V 2.4 4.5 7.1 2.1 8.5 2.1 9.4 3.3V ± 0.3V 2.0 2.9 6.4 2.1 7.7 2.1 8.5

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74AUP1G02 Document number: DS35146 Rev. 5- 2 7 of 16 www.diodes.com February 2015 © Diodes Incorporated 74AUP1G02 Operating and Package Characteristics (@TA = +25°C, unless otherwise specified.) Parameter Test Conditions VCC Typ Unit Cpd Power Dissipation Capacitance f = 1MHz No Load 0.8V 6.8 pF 1.2V ± 0.1V 6.7 1.5V ± 0.1V 6.6 1.8V ± 0.15V 6.2 2.5V ± 0.2V 6.5 3.3V ± 0.3V 6.4 Ci Input Capacitance Vi = VCC or GND 0V or 3.3V 1.5 pF θJA Thermal Resistance Junction-to-Ambient SOT353 (Note 9) — 371 °C/W X2-DFN0808-4 — 430 X1-DFN1010-6 — 435 X2-DFN1010-6 — 445 X2-DFN1409-6 — 470 X2-DFN1410-6 — 460 θJC Thermal Resistance Junction-to-Case SOT353 (Note 9) — 143 °C/W X2-DFN0808-4 — 240 X1-DFN1010-6 — 250 X2-DFN1010-6 — 250 X2-DFN1409-6 — 275 X2-DFN1410-6 — 265 Note: 9. Test condition for each of the six package types: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

Page 9

74AUP1G02 Document number: DS35146 Rev. 5- 2 8 of 16 www.diodes.com February 2015 © Diodes Incorporated 74AUP1G02 Parameter Measurement Information Vcc Inputs VM CL VI tr/tf 0.8V VCC ≤3ns VCC/2 5, 10, 15, 30pF 1.2V±0.1V VCC ≤3ns VCC/2 5, 10, 15, 30pF 1.5V±0.1V VCC ≤3ns VCC/2 5, 10, 15, 30pF 1.8V ±0.15V VCC ≤3ns VCC/2 5, 10, 15, 30pF 2.5V±0.2V VCC ≤3ns VCC/2 5, 10, 15, 30pF 3.3V±0.3V VCC ≤3ns VCC/2 5, 10, 15, 30pF Voltage Waveform Pulse Duration Voltage Waveform Propagation Delay Times Inverting and Non Inverting Outputs Figure 1 Load Circuit and Voltage Waveforms Notes: A. Includes test lead and test apparatus capacitance. B. All pulses are supplied at pulse repetition rate ≤ 10MHz. C. Inputs are measured separately one transition per measurement. D. tPLH and tPHL are the same as tPD.

Page 10

74AUP1G02 Document number: DS35146 Rev. 5- 2 9 of 16 www.diodes.com February 2015 © Diodes Incorporated 74AUP1G02 Marking Information (1) SOT353 1 2 3 5 74 XX Y W X XX : Identification code W : Week : A~Z : 1~26 week; X : A~Z : Internal code (Top View) Y : Year 0~9 a~z : 27~52 week; z represents 52 and 53 week Part Number Package Identification Code 74AUP1G02SE-7 SOT353 XJ (2) X2-DFN0808-4, X1-DFN1010-6, X2-DFN1010-6, X2-DFN1409-6 and X2-DFN1410-6 Y : Year : 0~9 (Top View) X : A~Z : Internal code Y W X XX XX : Identification Code W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week Part Number Package Identification Code 74AUP1G02FS3-7 X2-DFN0808-4 YP 74AUP1G02FW5-7 X1-DFN1010-6 Q3 74AUP1G02FW4-7 X2-DFN1010-6 XJ 74AUP1G02FX4-7 X2-DFN1409-6 HB 74AUP1G02FZ4-7 X2-DFN1410-6 XJ

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