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AO3401AL

hot AO3401AL

AO3401AL

For Reference Only

Part Number AO3401AL
Manufacturer Alpha & Omega Semiconductor Inc.
Description MOSFET P-CH 30V SOT23
Datasheet AO3401AL Datasheet
Package -
In Stock 17766 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Apr 2 - Apr 7 (Choose Expedited Shipping)
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AO3401AL

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AO3401AL Specifications

ManufacturerAlpha & Omega Semiconductor Inc.
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet AO3401AL Datasheet
Package-
Series*

AO3401AL Datasheet

Page 1

Page 2

Symbol VDS VGS IDM TJ, TSTG Symbol Typ Max 65 90 85 125 RθJL 43 80 W Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient AF t ≤ 10s RθJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W ±12Gate-Source Voltage Drain-Source Voltage -30 Continuous Drain Current A,F Maximum UnitsParameter TA=25°C TA=70°C Absolute Maximum Ratings TA=25°C unless otherwise noted V V -3.8 -25Pulsed Drain Current B Power Dissipation A TA=25°C Junction and Storage Temperature Range A PD °C 1.4 0.9 -55 to 150 TA=70°C ID -4.3 AO3401A P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -30V ID = -4.3A (VGS = -10V) RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 55mΩ (VGS = -4.5V) RDS(ON) < 80mΩ (VGS = -2.5V) Rg,Ciss,Coss,Crss Tested General Description The AO3401A/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. AO3401A and AO3401AL are electrically identical. -RoHS Compliant -AO3401AL is Halogen Free G D S S G D TO-236 (SOT-23) Top View

Page 3

AO3401A Symbol Min Typ Max Units BVDSS -30 V -1 TJ=55°C -5 IGSS ±100 nA VGS(th) -0.6 -1 -1.3 V ID(ON) -25 A 36 44 TJ=125°C 52 63 44 55 mΩ 62 80 mΩ gFS 13 S VSD -0.75 -1 V IS -2 A Ciss 933 1200 pF Coss 108 pF Crss 81 pF Rg 6 9 Ω Qg 9.3 12.2 nC Qgs 1.5 nC Qgd 3.7 nC tD(on) 5.2 ns tr 6.8 ns tD(off) 42 ns tf 15 ns trr 21 28 ns Qrr 14.3 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-4.3A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current ID=-250µA, VGS=0V VGS=-2.5V, ID=-2.5A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-4.3A Reverse Transfer Capacitance Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA Gate Threshold Voltage VDS=VGS ID=-250µA VDS=-30V, VGS=0V VDS=0V, VGS=±12V Zero Gate Voltage Drain Current Gate-Body leakage current RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage mΩ VGS=-4.5V, ID=-3.5A IS=-1A,VGS=0V VDS=-5V, ID=-4.3A IF=-4.3A, dI/dt=100A/µs VGS=0V, VDS=-15V, f=1MHz SWITCHING PARAMETERS Total Gate Charge VGS=-4.5V, VDS=-15V, ID=-4.3AGate Source Charge Gate Drain Charge Turn-On Rise Time Turn-Off DelayTime VGS=-10V, VDS=-15V, RL=3.5Ω, RGEN=6Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F.The current rating is based on the t≤ 10s thermal resistance rating. Rev2: Aug.2008 Alpha & Omega Semiconductor, Ltd. www.aosmd.com

Page 4

AO3401A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 5 10 15 20 25 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics -I D ( A ) VGS=-2V -3V -4.5V -10V -2.5V 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics -I D (A ) 20 40 60 80 100 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage R D S (O N ) (m ΩΩ ΩΩ ) 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics -I S ( A ) 25°C 125°C 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature N o rm a li z e d O n -R e s is ta n c e VGS=-2.5V ID=-4.3A, VGS=-10V ID=-3.5A, VGS=-4.5V 20 30 40 50 60 70 80 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage R D S (O N ) (m ΩΩ ΩΩ ) 25°C 125°C VDS=-5V VGS=-2.5V VGS=-4.5V VGS=-10V ID=-4.3A 25°C 125°C ID=-2.5A Alpha & Omega Semiconductor, Ltd. www.aosmd.com

Page 5

AO3401A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 VDS (Volts) I D ( A m p s ) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10ms 1ms 0.1s DC RDS(ON) limited TJ(Max)=150°C TC=25°C 100µs 10s 0 1 2 3 4 5 0 3 6 9 12 -Qg (nC) Figure 7: Gate-Charge Characteristics -V G S ( V o lt s ) 0 400 800 1200 1600 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics C a p a c it a n c e ( p F ) Ciss 0 6 12 18 24 30 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note E) P o w e r (W ) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Z θθ θθ J A N o rm a li z e d T ra n s ie n t T h e rm a l R e s is ta n c e Coss Crss VDS=-15V ID=-4.3A Single Pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W Ton T PD In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse TJ(Max)=150°C TA=25°C 10µs Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO3401AL Reviews

Average User Rating
5 / 5 (120)
★ ★ ★ ★ ★
5 ★
108
4 ★
12
3 ★
0
2 ★
0
1 ★
0

Bayl*****ampton

January 19, 2020

What can I say, great value for the money. I only needed 2 but now I have some spares for future projects. They got the job done, nothing more I can say.

Juli*****abhu

January 2, 2020

Worked wonderfully. Went through the instructions to the tea to make sure it was done correctly.

Paul*****arajan

December 31, 2020

Great dealing with you Guys. Thanks for a very prompt delivery.

Adele*****villa

December 30, 2020

Items as described, quick dispatch, took a while with shipment.

Chr*****Wagle

December 25, 2019

I like this way to add a project, choose existing project to add components. I use this method frequently to keep track of my projects. Thanks Heisener!

Blakel*****kenship

December 23, 2019

Good seller, incredible reliable.Item as described. Very professional

Hayd*****rish

November 28, 2019

I enjoy Good service from Heisener team , I can get good quality components what I want in heisener.com.

Elis*****andler

November 10, 2019

The specs range is wide for a selection and the customer service is great.

Jay*****Parra

November 6, 2019

It gives you a good quality product, with a great variety.. I will for sure order this set again when i start to run low

Sienn*****ayanan

November 3, 2019

Fantastic Quality Control and Great Selection. Heisener Electronics has became to my No.1 Supplier for many years.

AO3401AL Guarantees

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