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AO4455

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AO4455

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Part Number AO4455
Manufacturer Alpha & Omega Semiconductor Inc.
Description MOSFET P-CH 30V 17A 8SOIC
Datasheet AO4455 Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 329,460 piece(s)
Unit Price $ 0.2871 *
Lead Time Can Ship Immediately
Estimated Delivery Time Dec 2 - Dec 7 (Choose Expedited Shipping)
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Part Number # AO4455 (Transistors - FETs, MOSFETs - Single) is manufactured by Alpha & Omega Semiconductor Inc. and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For AO4455 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add AO4455 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of AO4455.

AO4455 Specifications

ManufacturerAlpha & Omega Semiconductor Inc.
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet AO4455Datasheet
Package8-SOIC (0.154", 3.90mm Width)
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)6V, 20V
Vgs(th) (Max) @ Id2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs76nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds3400pF @ 15V
Vgs (Max)��25V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Rds On (Max) @ Id, Vgs6.2 mOhm @ 15A, 20V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

AO4455 Datasheet

Page 1

Page 2

AO4455 30V P-Channel MOSFET Product Summary VDS (V) = -30V ID = -17A (VGS = -20V) RDS(ON) < 6.2mΩ (VGS = -20V) RDS(ON) < 7.2mΩ (VGS = -10V) ESD Protected 100% UIS tested 100% Rg tested General Description The AO4455 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. * RoHS and Halogen-Free Complaint SOIC-8 Top View Bottom View D D D D S S S G S G D Symbol VDS VGS IDM TJ, TSTG Symbol Typ Max 26 40 50 75 RθJL 14 24 ID -17 -182Pulsed Drain Current B Power Dissipation A TA=25°C Absolute Maximum Ratings TA=25°C unless otherwise noted V V -14 Continuous Drain Current AF Maximum UnitsParameter TA=25°C TA=70°C ±25Gate-Source Voltage Drain-Source Voltage -30 A WPD 3.1 2TA=70°C Thermal Characteristics Parameter Junction and Storage Temperature Range °C Units Maximum Junction-to-Ambient AF t ≤ 10s -55 to 150 RθJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W Maximum Junction-to-Lead C Steady-State °C/W Rev.1.0: July 2013 www.aosmd.com Page 1 of 5

Page 3

AO4455 Symbol Min Typ Max Units BVDSS -30 V -1 TJ=55°C -5 ±1 µA ±10 µA VGS(th) -1.5 -2.1 -2.6 V 5 6.2 TJ=125°C 7.2 9 5.7 7.2 mΩ 7.4 9.5 mΩ gFS 48 S VSD -0.7 -1 V IS -4.2 A Ciss 2823 3400 pF Coss 574 pF Crss 424 600 pF Rg 2.1 4.0 6.4 Ω Qg 54 76 nC Qgs 9 nC Qgd 16 nC t 12.5 ns Reverse Transfer Capacitance Total Gate Charge Forward Transconductance VDS=-5V, ID=-15A VGS=-6V, ID=-10A DYNAMIC PARAMETERS RDS(ON) Static Drain-Source On-Resistance mΩ VGS=-10V, ID=-15A IS=-1A,VGS=0V Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-15A Gate Drain Charge SWITCHING PARAMETERS Turn-On DelayTime Gate Source Charge Drain-Source Breakdown Voltage ID=-250µA, VGS=0V IDSS Gate Threshold Voltage VDS=VGS ID=-250µA VGS=-20V, ID=-15A IGSS Gate-Body leakage current µAZero Gate Voltage Drain Current VDS=-30V, VGS=0V VDS=0V, VGS=±20V Output Capacitance VGS=0V, VDS=-15V, f=1MHz Diode Forward Voltage Maximum Body-Diode Continuous Current Input Capacitance Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions VDS=0V, VGS=±25V Rev.1.0: July 2013 www.aosmd.com Page 2 of 5 D(on) tr 12.5 ns tD(off) 49 ns tf 109 ns trr 22.3 32 ns Qrr 8.8 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE VGS=-10V, VDS=-15V, RL=1.0Ω, RGEN=3Ω Turn-Off Fall Time Turn-On Rise Time Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs IF=-15A, dI/dt=100A/µs Turn-Off DelayTime Body Diode Reverse Recovery Time A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Page 4

AO4455 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 10 20 30 40 50 0 1 2 3 4 5 -I D (A ) -VDS (Volts) Fig 1: On-Region Characteristics VGS=-3V -3.5V -4V -6V -10V -4.5V 0 10 20 30 40 50 2 2.5 3 3.5 4 4.5 5 -I D (A ) -VGS(Volts) Figure 2: Transfer Characteristics 4 6 8 10 0 5 10 15 20 25 30 R D S (O N ) (m ΩΩ ΩΩ ) 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0 25 50 75 100 125 150 175 N o rm a li z e d O n -R e s is ta n c e VGS=-20V ID = -15A VGS=-10V ID = -15A VGS=-6V ID = -10A 25°C 125°C VDS=-5V VGS=-6V VGS=-10V VGS=-20V Rev.1.0: July 2013 www.aosmd.com Page 3 of 5 -15 -12.8 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 0.0 0.2 0.4 0.6 0.8 1.0 -I S (A ) -VSD (Volts) Figure 6: Body-Diode Characteristics 25°C 125°C Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 4 6 8 10 12 14 16 4 8 12 16 20 R D S (O N ) (m ΩΩ ΩΩ ) -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage ID=-15A 25°C 125°C

Page 5

AO4455 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 2 4 6 8 10 0 10 20 30 40 50 60 -V G S (V o lt s ) -Qg (nC) Figure 7: Gate-Charge Characteristics 0 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 30 C a p a c it a n c e ( p F ) -VDS (Volts) Figure 8: Capacitance Characteristics Ciss 10 100 1000 10000 P o w e r (W ) Coss Crss 0.1 1.0 10.0 100.0 1000.0 -I D (A m p s ) 100µs 10ms 1ms 0.1s 1s 10s DC RDS(ON) limited TJ(Max)=150°C T =25°C VDS=-15V ID=-15A TJ(Max)=150°C TA=25°C10µs Rev.1.0: July 2013 www.aosmd.com Page 4 of 5 -15 -12.8 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note E) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Z θθ θθJ A N o rm a li z e d T ra n s ie n t T h e rm a l R e s is ta n c e Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.0 0.1 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe A Single Pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Ton T PD

AO4455 Reviews

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Ro***** Sem

November 22, 2020

I've placed many orders from Heisener . I have never had an error with any order, the order has always went out the same day, and the items are always well packaged.

Joann*****guson

November 19, 2020

They worked great. Not much to say - as far as I can tell they adhere to the specs, and did the job I needed them to. Good transistors for higher current situations.

Darr*****Blake

November 19, 2020

Used it on my system it works perfect as I need.

Isab*****ittle

November 17, 2020

Very happy for the fast shipping and good price!

Meil*****Vang

November 17, 2020

Quality electronic components plus fast response.Thank you.

Mil***** Nath

November 16, 2020

Can't speak to the long term reliability as of yet, but they seem to be of decent quality and I don't expect any issues.

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