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AO4884

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AO4884

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Part Number AO4884
Manufacturer Alpha & Omega Semiconductor Inc.
Description MOSFET 2N-CH 40V 10A 8SOIC
Datasheet AO4884 Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 24,010 piece(s)
Unit Price $ 0.3541 *
Lead Time Can Ship Immediately
Estimated Delivery Time Dec 4 - Dec 9 (Choose Expedited Shipping)
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Part Number # AO4884 (Transistors - FETs, MOSFETs - Arrays) is manufactured by Alpha & Omega Semiconductor Inc. and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For AO4884 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add AO4884 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of AO4884.

AO4884 Specifications

ManufacturerAlpha & Omega Semiconductor Inc.
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Datasheet AO4884Datasheet
Package8-SOIC (0.154", 3.90mm Width)
Series-
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C10A
Rds On (Max) @ Id, Vgs13 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1950pF @ 20V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

AO4884 Datasheet

Page 1

Page 2

AO4884 40V Dual N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 10A RDS(ON) (at VGS=10V) < 13mΩ RDS(ON) (at VGS = 4.5V) < 16mΩ 100% UIS Tested 100% Rg Tested Symbol VDS VGS IDM IAS, IAR EAS, EAR TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJL 1.3TA=70°C Junction and Storage Temperature Range -55 to 150 °C Thermal Characteristics UnitsParameter Typ Max °C/W RθJA 48 74 62.5 V±20Gate-Source Voltage Drain-Source Voltage 40 The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. V Maximum UnitsParameter Absolute Maximum Ratings TA=25°C unless otherwise noted 40V mJ Avalanche Current C 61 A35 A ID 10 8 50 TA=25°C TA=70°C Power Dissipation B PD Avalanche energy L=0.1mH C Pulsed Drain Current C Continuous Drain Current TA=25°C W 2 Maximum Junction-to-Lead °C/W °C/WMaximum Junction-to-Ambient A D 32 90 40 Maximum Junction-to-Ambient A G2 D2 S2 G1 D1 S1 G1 S1 G2 S2 D1 D1 D2 D2 2 4 5 1 3 8 6 7 Top View SOIC-8 Top View Bottom View Pin1 Rev 1: Nov 2010 www.aosmd.com Page 1 of 6

Page 3

AO4884 Symbol Min Typ Max Units BVDSS 40 V VDS=40V, VGS=0V 1 TJ=55°C 5 IGSS ±100 nA VGS(th) Gate Threshold Voltage 1.55 2.2 2.7 V ID(ON) 50 A 11 13 TJ=125°C 16.5 20 12.7 16 mΩ gFS 50 S VSD 0.7 1 V IS 2.5 A Ciss 1200 1500 1950 pF Coss 150 215 280 pF Crss 80 135 190 pF Rg 1.7 3.5 5.3 Ω Qg(10V) 22 27.2 33 nC Qg(4.5V) 10 13.6 16 nC Qgs 3.6 4.5 5.4 nC Qgd 3.8 6.4 9 nC tD(on) 6.4 ns tr 17.2 ns tD(off) 29.6 ns tf 16.8 ns trr 9 13 17 ns Qrr 25 35 45 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=20V, RL=2Ω, RGEN=3Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=20V, ID=10A Gate Source Charge Gate Drain Charge Total Gate Charge mΩ IS=1A,VGS=0V VDS=5V, ID=10A VGS=4.5V, ID=10A Forward Transconductance Diode Forward Voltage RDS(ON) Static Drain-Source On-Resistance IDSS µA VDS=VGS ID=250µA VDS=0V, VGS= ±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=10A Reverse Transfer Capacitance IF=10A, dI/dt=500A/µs VGS=0V, VDS=20V, f=1MHz SWITCHING PARAMETERS A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. Rev 1: Nov 2010 www.aosmd.com Page 2 of 6

Page 4

AO4884 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 17 5 2 10 0 18 40 0 20 40 60 80 100 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) I D (A ) 4 6 8 10 12 14 16 18 20 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) R D S (O N ) (m ΩΩ ΩΩ ) 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) I S ( A ) 25°C 125°C 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) N o rm a li z e d O n -R e s is ta n c e VGS=4.5V ID=10A VGS=10V ID=10A 5 10 15 20 25 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) R D S (O N ) (m ΩΩ ΩΩ ) 25°C 125°C VDS=5V VGS=4.5V VGS=10V ID=10A 25°C 125°C 0 20 40 60 80 100 120 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) I D ( A ) VGS=3V 4V 10V 4.5V 3.5V Rev 1: Nov 2010 www.aosmd.com Page 3 of 6

Page 5

AO4884 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 2 4 6 8 10 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics V G S ( V o lt s ) 0 500 1000 1500 2000 2500 0 10 20 30 40 VDS (Volts) Figure 8: Capacitance Characteristics C a p a c it a n c e ( p F ) Ciss Coss Crss VDS=20V ID=10A 10 100 1 10 100 1000 Time in avalanche, tA (µs) Figure 9: Single Pulse Avalanche capability (Note C) I A R ( A ) P e a k A v a la n c h e C u rr e n t TA=25°C TA=150°C TA=100°C TA=125°C 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) P o w e r (W ) TA=25°C 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 VDS (Volts) I D ( A m p s ) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10µs 10s 1m DC RDS(ON) limited TJ(Max)=150°C TA=25°C 100µ 10ms Rev 1: Nov 2010 www.aosmd.com Page 4 of 6

Page 6

AO4884 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Z θθ θθJ A N o rm a li z e d T ra n s ie n t T h e rm a l R e s is ta n c e Single Pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA Ton T PD In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W Rev 1: Nov 2010 www.aosmd.com Page 5 of 6

AO4884 Reviews

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Coop*****okhale

November 22, 2020

Rec today in good order & condition . Thanks for speedy delivery.Regards.

Abra*****Nash

November 16, 2020

Absolutely the finest source for electric components, connectors, terminal strips, panel lights, etc. The website online ordering system makes a easy business.

Maka*****dley

November 4, 2020

You're my good supplier. I appreciate Heisener Electronics on many levels.

Emm*****Beck

November 2, 2020

This product works great what more can I say.

Lac*****Ghosh

October 27, 2020

I wanted something that would handle voltage spikes. Worked perfectly. I plan to use four more.

Dana*****daram

October 15, 2020

So far so good. I need to see how they hold up.

Darre*****rshall

October 7, 2020

Great product & fast shipping. Works as they should.

AO4884 Guarantees

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We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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