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AOD609

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AOD609

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Part Number AOD609
Manufacturer Alpha & Omega Semiconductor Inc.
Description MOSFET N/P-CH 40V 12A TO252-4
Datasheet AOD609 Datasheet
Package TO-252-5, DPak (4 Leads + Tab), TO-252AD
In Stock 13,576 piece(s)
Unit Price $ 0.3238 *
Lead Time Can Ship Immediately
Estimated Delivery Time Sep 26 - Oct 1 (Choose Expedited Shipping)
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Part Number # AOD609 (Transistors - FETs, MOSFETs - Arrays) is manufactured by Alpha & Omega Semiconductor Inc. and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For AOD609 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add AOD609 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of AOD609.

AOD609 Specifications

ManufacturerAlpha & Omega Semiconductor Inc.
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Datasheet AOD609Datasheet
PackageTO-252-5, DPak (4 Leads + Tab), TO-252AD
Series-
FET TypeN and P-Channel, Common Drain
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C12A
Rds On (Max) @ Id, Vgs30 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds650pF @ 20V
Power - Max2W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device PackageTO-252-4L

AOD609 Datasheet

Page 1

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Symbol Max p-channel Units VDS V VGS V IDM IAR EAR mJ TJ, TSTG °C Symbol Device Typ Max Units n-ch 17.4 25 °C/W n-ch 50 60 °C/W RqJC n-ch 4 5.5 °C/W p-ch 16.7 25 °C/W p-ch 50 60 °C/W RqJC p-ch 3.5 5 °C/W A 14 -20 9.8 Power Dissipation Continuous Drain Current B,H ID PD Avalanche Current C -12 -12 Repetitive avalanche energy L=0.1mH C TC=25°C TC=100°C Pulsed Drain Current B 20 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel W 12 12 30 27 14 40 -40 ±20 Drain-Source Voltage ±20Gate-Source Voltage -30 TC=100°C TC=25°C Steady-State Junction and Storage Temperature Range RqJA Maximum Junction-to-Ambient A,D -55 to 175 Parameter Maximum Junction-to-Ambient A,D t ≤ 10s Maximum Junction-to-Lead C Steady-State Maximum Junction-to-Ambient A,D t ≤ 10s 30 15 RqJA Maximum Junction-to-Ambient A,D Steady-State Maximum Junction-to-Lead C Steady-State W TA=70°C 1.3 1.3 Thermal Characteristics: n-channel and p-channel -55 to 175 Power Dissipation TA=25°C PDSM 2 2 AOD609 Complementary Enhancement Mode Field Effect Transistor Features n-channel VDS (V) = 40V, ID = 12A (VGS=10V) RDS(ON)< 30mW (VGS=10V) RDS(ON)< 40mW (VGS=4.5V) p-channel VDS (V) = -40V, ID = -12A (VGS=-10V) RDS(ON)< 45mW (VGS= -10V) RDS(ON)< 66mW (VGS= -4.5V) 100% UIS Tested! 100% Rg Tested! General Description The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. -RoHS Compliant -Halogen Free* G1 S1 G2 S2 n-channel p-channel D1/D2 Top View Drain Connected to Tab TO-252-4L D-PAK Top View Bottom View S1 S2 G1 G2 D1/D2 Rev5.0: November 2018 www.aosmd.com Page 1 of 9

Page 3

AOD609 Symbol Min Typ Max Units BVDSS 40 V 1 TJ=55°C 5 IGSS ±100 nA VGS(th) 1.7 2.5 3 V ID(ON) 30 A 24 30 TJ=125°C 37 46 31 40 gFS 25 S VSD 0.76 1 V IS 12 A Ciss 516 650 pF Coss 82 pF Crss 43 pF Rg 4.6 6.9 W Qg (10V) 8.3 10.8 nC Qgs 2.3 nC Qgd 1.6 nC tD(on) 6.4 ns tr 3.6 ns tD(off) 16.2 ns tf 6.6 ns trr 18 24 ns Qrr 10 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Diode Forward Voltage VGS=10V, VDS=20V, RL=1.4W, RGEN=3W Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Total Gate Charge VGS=10V, VDS=20V, ID=12A Input Capacitance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Reverse Transfer Capacitance Gate resistance IS=1A,VGS=0V VDS=0V, VGS= ±20V RDS(ON) Static Drain-Source On-Resistance Forward Transconductance VGS=4.5V, ID=8A VDS=5V, ID=12A VGS=10V, ID=12A N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage ID=250mA, VGS=0V Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/ms Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time IF=12A, dI/dt=100A/ms VGS=0V, VDS=20V, f=1MHzOutput Capacitance IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V Maximum Body-Diode Continuous Current H DYNAMIC PARAMETERS mW Gate Threshold Voltage VDS=VGS ID=250mA On state drain current VGS=10V, VDS=5V mA Gate-Body leakage current A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using the steady state junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. The maximum current rating is limited by bond-wires. Rev5.0: November 2018 www.aosmd.com Page 2 of 9

Page 4

AOD609 Symbol Min Typ Max Units BVDSS -40 V -1 TJ=55°C -5 IGSS ±100 nA VGS(th) -1.7 -2 -3 V ID(ON) -30 A 36 45 TJ=125°C 52 65 51 66 gFS 22 S VSD -0.76 -1 V IS -12 A Ciss 900 1125 pF Coss 97 pF Crss 68 pF Rg 14 W Qg (-10V) 16.2 21 nC Qg (-4.5V) 7.2 9.4 nC Qgs 3.8 nC Qgd 3.5 nC tD(on) 6.2 ns tr 8.4 ns tD(off) 44.8 ns tf 41.2 ns trr 21 27 ns Qrr 14 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Gate-Body leakage current VDS=0V, VGS= ±20V P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage ID= -250mA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS= -40V, VGS=0V mA Gate Threshold Voltage VDS=VGS ID= -250mA On state drain current VGS= -10V, VDS= -5V mWRDS(ON) Static Drain-Source On-Resistance Forward Transconductance VGS= -10V, ID= -12A VGS= -4.5V, ID= -8A VDS= -5V, ID= -12A Diode Forward Voltage IS= -1A,VGS=0V Maximum Body-Diode Continuous Current H Reverse Transfer Capacitance DYNAMIC PARAMETERS Input Capacitance VGS=0V, VDS= -20V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge VGS= -10V, VDS= -20V, ID= -12A Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Gate resistance Output Capacitance Body Diode Reverse Recovery Time IF= -12A, dI/dt=100A/ms Body Diode Reverse Recovery Charge IF= -12A, dI/dt=100A/ms VGS= -10V, VDS= -20V, RL=1.4W, RGEN=3W Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. The maximum current rating is limited by bond-wires. Rev5.0: November 2018 www.aosmd.com Page 3 of 9

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AOD609 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 0 5 10 15 20 25 30 0 1 2 3 4 5 I D ( A ) VDS (Volts) Fig 1: On-Region Characteristics VGS=3.5V 4V 10V 5V 4.5V 0 5 10 15 20 25 30 2 2.5 3 3.5 4 4.5 I D (A ) VGS(Volts) Figure 2: Transfer Characteristics 10 15 20 25 30 35 40 0 5 10 15 20 R D S (O N ) (m W ) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0.0001 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 I S ( A ) VSD (Volts) Figure 6: Body-Diode Characteristics 25°C 125°C 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 N o rm a li z e d O n -R e s is ta n c e Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V ID=12A VGS=4.5V ID=8A 10 20 30 40 50 60 70 2 4 6 8 10 R D S (O N ) (m W ) VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 125°C VDS=5V VGS=4.5V VGS=10V ID=12A 25°C 125°C Rev5.0: November 2018 www.aosmd.com Page 4 of 9

Page 6

AOD609 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 0 2 4 6 8 10 0 2 4 6 8 10 V G S ( V o lt s ) Qg (nC) Figure 7: Gate-Charge Characteristics 0 200 400 600 800 0 10 20 30 40 C a p a c it a n c e ( p F ) VDS (Volts) Figure 8: Capacitance Characteristics Ciss 1 10 100 1000 0.00001 0.001 0.1 10 1000 P o w e r (W ) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note E) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Z q J A N o rm a li z e d T ra n s ie n t T h e rm a l R e s is ta n c e Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Coss Crss 0.01 0.1 1 10 100 0.1 1 10 100 I D ( A m p s ) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100ms 10ms 1ms 0.1s 1s 10s DC TJ(Max)=150° C RDS(ON) limited VDS=20V ID= 12A Single Pulse D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=60°C/W Ton T PD In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse TJ(Max)=150°C TA=25°C 10ms Rev5.0: November 2018 www.aosmd.com Page 5 of 9

Page 7

AOD609 - + VDC Ig Vds DUT - + VDC Vgs Vgs 10V Qg Qgs Qgd Charge Gate Charge Test Circuit & Waveform - + VDC DUT VddVgs Vds Vgs RL Rg Vgs Vds 10% 90% Resistive Switching Test Circuit & Waveforms t trd(on) ton t d(off) t f toff VddVgs Id Vgs Rg DUT - + VDC L Vgs Vds Id Vgs BV I Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Vds AR DSS 2 E = 1/2 LIARAR Ig Vgs - + VDC DUT L Vgs Vds Isd Isd Diode Recovery Test Circuit & Waveforms Vds - Vds + I F dI/dt I RM rr Vdd Vdd Q = - Idt trr Rev5.0: November 2018 www.aosmd.com Page 6 of 9

Page 8

AOD609 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 0 5 10 15 20 25 30 0 1 2 3 4 5 -I D ( A ) -VDS (Volts) Fig 12: On-Region Characteristics VGS=-3.5V -4V -10V -5V -4.5V 0 5 10 15 20 25 30 1 2 3 4 5 -I D (A ) -VGS(Volts) Figure 13: Transfer Characteristics 30 35 40 45 50 55 60 65 0 5 10 15 20 R D S (O N ) (m W ) -ID (A) Figure 14: On-Resistance vs. Drain Current and Gate Voltage 0.0001 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -I S ( A ) -VSD (Volts) Figure 17: Body-Diode Characteristics 25°C 125°C 0.7 0.9 1.1 1.3 1.5 1.7 -50 -25 0 25 50 75 100 125 150 N o rm a li z e d O n -R e s is ta n c e Temperature (°C) Figure 15: On-Resistance vs. Junction Temperature VGS=-10V ID=-12A VGS=-4.5V ID=-8A 20 40 60 80 100 2 4 6 8 10 R D S (O N ) (m W ) -VGS (Volts) Figure 16: On-Resistance vs. Gate-Source Voltage 25°C 125°C VDS=-5V VGS=-4.5V VGS=-10V ID=-12A 25°C 125°C Rev5.0: November 2018 www.aosmd.com Page 7 of 9

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AOD609 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 0 2 4 6 8 10 0 3 6 9 12 15 18 -V G S ( V o lt s ) Qg (nC) Figure 18: Gate-Charge Characteristics 0 200 400 600 800 1000 1200 1400 0 10 20 30 40 C a p a c it a n c e ( p F ) -VDS (Volts) Figure 19: Capacitance Characteristics Ciss 1 10 100 1000 0.00001 0.001 0.1 10 1000 P o w e r (W ) Pulse Width (s) Figure 21: Single Pulse Power Rating Junction-to- Ambient (Note E) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Z q J A N o rm a li z e d T ra n s ie n t T h e rm a l R e s is ta n c e Pulse Width (s) Figure 22: Normalized Maximum Transient Thermal Impedance Coss Crss 0.01 0.1 1 10 100 0.1 1 10 100 -I D ( A m p s ) -VDS (Volts) Figure 20: Maximum Forward Biased Safe Operating Area (Note E) 100ms 10ms 1ms 0.1s 1s 10s DC TJ(Max)=150° C RDS(ON) limited VDS=-20V ID= -12A Single Pulse D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=60°C/W Ton T PD In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse TJ(Max)=150°C TA=25°C 10ms Rev5.0: November 2018 www.aosmd.com Page 8 of 9

AOD609 Reviews

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Jako*****llen

August 19, 2020

Well packaged and good condition with the parts, arrived on time, good customer service.

Rafa*****rown

August 11, 2020

To be honest, I think you are doing an outstanding job.

Jour*****Horne

July 30, 2020

These function just as well. You do need to spend some time modifying the harness, but no big deal.

Laur*****ibal

July 30, 2020

AOD609 arrived in great condition, very happy, Would buy again. A++ . thank you!!

Elis*****h Nath

July 21, 2020

Fast delivery well packed and as described.

Pais*****Abbott

July 20, 2020

Super Fast Delivery & Well Packaged - Great Service - No Problems

Genes*****mmond

July 11, 2020

Arrived promptly, carefully packaged, as described, many thanks

Clari*****hanker

July 10, 2020

Pleased with this purchase, good, quick service and item exactly as shown.

Kayl*****hagat

July 10, 2020

Awesome buying experience, smooth transmission with the seller, and fast delivery.

Aspe*****menez

July 8, 2020

Heisener has everything! Each product is easy to search and navigate. No minimum quantities. Fast shipping!

AOD609 Guarantees

Service Guarantee

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We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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