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AON6512

hotAON6512

AON6512

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Part Number AON6512
Manufacturer Alpha & Omega Semiconductor Inc.
Description MOSFET N-CH 30V 54A 8DFN
Datasheet AON6512 Datasheet
Package 8-PowerSMD, Flat Leads
In Stock 83,120 piece(s)
Unit Price $ 0.4081 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 20 - Jan 25 (Choose Expedited Shipping)
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Part Number # AON6512 (Transistors - FETs, MOSFETs - Single) is manufactured by Alpha & Omega Semiconductor Inc. and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For AON6512 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add AON6512 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of AON6512.

AON6512 Specifications

ManufacturerAlpha & Omega Semiconductor Inc.
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet AON6512Datasheet
Package8-PowerSMD, Flat Leads
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C54A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds3430pF @ 15V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)7.4W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs1.7 mOhm @ 20A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DFN (5x6)
Package / Case8-PowerSMD, Flat Leads

AON6512 Datasheet

Page 1

Page 2

AON6512 30V N-Channel AlphaMOS General Description Product Summary VDS ID (at VGS=10V) 150A RDS(ON) (at VGS=10V) < 1.7mΩ RDS(ON) (at VGS = 4.5V) < 2.4mΩ Application 100% UIS Tested 100% Rg Tested Symbol VDS 30V• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial V Maximum UnitsParameter Absolute Maximum Ratings TA=25°C unless otherwise noted Drain-Source Voltage 30 G D S Top View 1 2 3 4 8 7 6 5 PIN1 DFN5X6 Top View Bottom View VGS IDM IAS EAS VDS Spike VSPIKE TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJCMaximum Junction-to-Case °C/W °C/WMaximum Junction-to-Ambient A D 1.1 55 1.5 W Power Dissipation A PDSM W TA=70°C 83 4.7 TA=25°C TC=25°C 7.4 33TC=100°CPower Dissipation B PD mJ Avalanche Current C 43 Continuous Drain Current 123 54 A70 Avalanche energy L=0.05mH C A TA=25°C IDSM A Max TA=70°C ID 150 115 TC=25°C TC=100°C 340Pulsed Drain Current C Continuous Drain Current G V±20Gate-Source Voltage 100ns 36 V Maximum Junction-to-Ambient A °C/W RθJA 14 40 17 Units Junction and Storage Temperature Range -55 to 150 °C Thermal Characteristics Parameter Typ Rev.1.0: March 2014 www.aosmd.com Page 1 of 6

Page 3

AON6512 Symbol Min Typ Max Units BVDSS 30 V VDS=30V, VGS=0V 1 TJ=55°C 5 IGSS 100 nA VGS(th) Gate Threshold Voltage 1 1.5 2 V 1.4 1.7 TJ=125°C 1.9 2.3 1.9 2.4 mΩ gFS 85 S VSD 0.7 1 V VSD 0.87 1.3 V IS 85 A Ciss 3430 pF Coss 1327 pF Crss 175 pF Rg 0.3 0.7 1.1 Ω Qg(10V) 53 64 nC Qg(4.5V) 25 30 nC Qgs 7.8 nC Qgd 10.3 nC tD(on) 7.5 ns t 5.0 ns VDS=0V, VGS= ±20V Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Forward Transconductance IS=1A,VGS=0V VDS=5V, ID=20A DYNAMIC PARAMETERS VGS=4.5V, ID=20A RDS(ON) Static Drain-Source On-Resistance Diode Forward Voltage mΩ VGS=10V, ID=20A Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µAZero Gate Voltage Drain Current Drain-Source Breakdown Voltage ID=250µA, VGS=0V Gate resistance f=1MHz Total Gate Charge Gate Source Charge Gate Drain Charge Total Gate Charge SWITCHING PARAMETERS VGS=10V, VDS=15V, ID=20A Turn-On Rise Time V =10V, V =15V, R =0.75Ω, Turn-On DelayTime Diode Forward Voltage IS=85A,VGS=0V Reverse Transfer Capacitance VGS=0V, VDS=15V, f=1MHz VDS=VGS, ID=250µA r tD(off) 33.8 ns tf 9.8 ns trr 22 ns Qrr 58 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs Turn-Off DelayTime GS DS L RGEN=3Ω Turn-Off Fall Time IF=20A, dI/dt=500A/µs A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. Rev.1.0: March 2014 www.aosmd.com Page 2 of 6

Page 4

AON6512 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 17 5 2 10 0 20 40 60 80 100 0 1 2 3 4 5 6 I D (A ) VGS(Volts) Figure 2: Transfer Characteristics (Note E) 0 1 2 3 4 0 5 10 15 20 25 30 R D S (O N ) (m ΩΩ ΩΩ ) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 200 N o rm a li z e d O n -R e s is ta n c e Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) VGS=4.5V ID=20A VGS=10V ID=20A 25°C 125°C VDS=5V VGS=4.5V VGS=10V 0 20 40 60 80 100 0 1 2 3 4 5 I D (A ) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=2.5V 3V 10V 4.5V 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 I S (A ) VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 25°C 125°C 0 1 2 3 4 5 2 4 6 8 10 R D S (O N ) (m ΩΩ ΩΩ ) VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) ID=20A 25°C 125°C Rev.1.0: March 2014 www.aosmd.com Page 3 of 6

Page 5

AON6512 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 2 4 6 8 10 0 10 20 30 40 50 60 V G S (V o lt s ) Qg (nC) Figure 7: Gate-Charge Characteristics 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 5 10 15 20 25 30 C a p a c it a n c e ( p F ) VDS (Volts) Figure 8: Capacitance Characteristics Ciss 0 40 80 120 160 200 240 280 0.0001 0.001 0.01 0.1 1 10 P o w e r (W ) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case Coss Crss VDS=15V ID=20A TJ(Max)=150°C TC=25°C10µs 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 I D (A m p s ) VDS (Volts) Figure 9: Maximum Forward Biased 10µs 10ms 1ms DC RDS(ON) limited TJ(Max)=150°C TC=25°C 100µs (Note F) 0.01 0.1 1 10 1E-05 0.0001 0.001 0.01 0.1 1 10 Z θθ θθJ C N o rm a li z e d T ra n s ie n t T h e rm a l R e s is ta n c e Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Single Pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC Ton T PD In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Safe Operating Area (Note F) RθJC=1.5°C/W Rev.1.0: March 2014 www.aosmd.com Page 4 of 6

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AON6512 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 150 P o w e r D is s ip a ti o n ( W ) TCASE (°C) Figure 12: Power De-rating (Note F) 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 C u rr e n t ra ti n g I D (A ) TCASE (°C) Figure 13: Current De-rating (Note F) 1 10 100 1000 10000 1E-05 0.001 0.1 10 1000 P o w e r (W ) Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to- TA=25°C 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 Z θθ θθJ A N o rm a li z e d T ra n s ie n t T h e rm a l R e s is ta n c e Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Single Pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA Ton T PD In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Ambient (Note H) RθJA=55°C/W Rev.1.0: March 2014 www.aosmd.com Page 5 of 6

AON6512 Reviews

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Xavi*****errell

December 25, 2020

Well packed in anti-static bags. Repaired my amp perfectly - thank you!

Kyr*****yers

December 21, 2020

EXACTLY what I was looking for -- one piece with a low forward voltage drop to isolate some DC power sources. They work fantastic!

Tyl*****Hicks

December 20, 2020

Very professional sellers, they have adopted MSL packaging for different parts.

Char*****Romero

December 19, 2020

You guys and girls are fantastic! The selection is fantastic and service is great.

Clar*****llace

December 13, 2020

Solved my electrical back feed problems on my alternator.

Mati*****Loke

December 2, 2020

Great item and excellent seller! Would highly recommend. Thank you. Trustworthy

Loui*****rtega

December 2, 2020

It arrived on time. I was able to finish a repair before Sunday service and with no over time. Easy to work with.

AON6512 Guarantees

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We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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