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AOV11S60

AOV11S60

AOV11S60

For Reference Only

Part Number AOV11S60
Manufacturer Alpha & Omega Semiconductor Inc.
Description MOSFET N-CH 600V 0.65A 5-DFN
Datasheet AOV11S60 Datasheet
Package 4-VSFN Exposed Pad
In Stock 154 piece(s)
Unit Price $ 1.0841 *
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AOV11S60

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AOV11S60 Specifications

ManufacturerAlpha & Omega Semiconductor Inc.
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet AOV11S60 Datasheet
Package4-VSFN Exposed Pad
SeriesaMOS?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25��C650mA (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds545pF @ 100V
Vgs (Max)��30V
Power Dissipation (Max)8.3W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs500 mOhm @ 3.8A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-DFN-EP (8x8)
Package / Case4-VSFN Exposed Pad

AOV11S60 Datasheet

Page 1

Page 2

AOV11S60 600V 8A α MOS TM Power Transistor General Description Product Summary VDS @ Tj,max 700V IDM 45A RDS(ON),max 0.5Ω Qg,typ 11nC Eoss @ 400V 2.7µJ 100% UIS Tested 100% Rg Tested Symbol VDS VGS IDM IAR EAR EAS MOSFET dv/dt ruggedness Peak diode recovery dv/dt H TJ, TSTG TL Symbol t ≤ 10s Steady-State Steady-State RθJC V/ns 300 20 W 15 Typ °C °C/W -55 to 150 Max 12 Units The AOV11S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. V UnitsParameter Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum 600Drain-Source Voltage 50 °C/W 0.6 0.8 A2 ±30 7.0 V A 45 A 0.65 0.22 TC=100°C Pulsed Drain Current C Continuous Drain Current TC=25°C 8 Gate-Source Voltage 156 Avalanche Current C Continuous Drain Current TA=25°C IDSM Power Dissipation B 120 ID Single pulsed avalanche energy G W 60 PD Repetitive avalanche energy C mJ mJ W/ o C 8.3 Power Dissipation A 1.25 Junction and Storage Temperature Range TC=25°C dv/dt Derate above 25 o C 100 5.3 TA=70°C TA=70°C TA=25°C PDSM Maximum Junction-to-Case Parameter Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J °C/W °C Thermal Characteristics Maximum Junction-to-Ambient A RθJA Maximum Junction-to-Ambient A D 40 G D S AOV11S60 DFN8X8 Bottom ViewTop View D G S S Pin2: Driver Source Pin1:G Rev.1.0: September 2013 www.aosmd.com Page 1 of 7

Page 3

AOV11S60 Symbol Min Typ Max Units 600 - - 650 700 - - - 1 - 10 - IGSS Gate-Body leakage current - - ±100 nΑ VGS(th) Gate Threshold Voltage 2.8 3.5 4.1 V - 0.42 0.5 Ω - 1.17 1.4 Ω VSD - 0.84 - V IS Maximum Body-Diode Continuous Current - - 8 A ISM - - 45 A Ciss - 545 - pF Coss - 37.3 - pF Co(er) - 30.8 - pF Co(tr) - 93.6 - pF Crss - 1.42 - pF Rg - 16.5 - Ω Qg - 11 - nC Qgs - 2.8 - nC Qgd - 3.8 - nC tD(on) - 20 - ns tr - 20 - ns tD(off) - 59 - ns tf - 20 - ns trr - 250 - ns Irm - 21 - A Qrr - 3.3 - µC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. VGS=0V, VDS=100V, f=1MHz Gate resistance VGS=0V, VDS=0V, f=1MHz Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions ID=250µA, VGS=0V, TJ=150°C Effective output capacitance, energy related H VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS IDSS Effective output capacitance, time related I RDS(ON) Static Drain-Source On-Resistance IS=5.5A,VGS=0V, TJ=25°CDiode Forward Voltage Input Capacitance VGS=0V, VDS=100V, f=1MHz Output Capacitance IF=5.5A,dI/dt=100A/µs,VDS=400V Reverse Transfer Capacitance BVDSS VGS=10V, VDS=400V, ID=5.5A, RG=25Ω Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=480V, ID=5.5AGate Source Charge Gate Drain Charge VGS=10V, ID=3.8A, TJ=25°C VDS=480V, TJ=150°C Zero Gate Voltage Drain Current Body Diode Reverse Recovery Charge IF=5.5A,dI/dt=100A/µs,VDS=400V Maximum Body-Diode Pulsed Current C Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime Body Diode Reverse Recovery Time Peak Reverse Recovery Current IF=5.5A,dI/dt=100A/µs,VDS=400V V VGS=10V, ID=3.8A, TJ=150°C Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C µA VDS=0V, VGS=±30V VDS=600V, VGS=0V VDS=5V, ID=250µA A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=2A, VDD=150V, Starting TJ=25°C H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Wavesoldering only allowed at leads. Rev.1.0: September 2013 www.aosmd.com Page 2 of 7

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AOV11S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 4 8 12 16 20 0 5 10 15 20 VDS (Volts) Figure 1: On-Region Characteristics@25°C I D ( A ) VGS=4.5V 6V 10V 7V 0.01 0.1 1 10 100 2 4 6 8 10 VGS(Volts) Figure 3: Transfer Characteristics I D (A ) -55°C VDS=20V 25°C 125°C 0.0 0.3 0.6 0.9 1.2 0 5 10 15 20 25 ID (A) Figure 4: On-Resistance vs. Drain Current and Gate Voltage R D S (O N ) ( ΩΩ ΩΩ ) VGS=10V 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 Temperature (°C) Figure 5: On-Resistance vs. Junction Temperature N o rm a li z e d O n -R e s is ta n c e VGS=10V ID=3.8A 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 TJ ( o C) Figure 6: Break Down vs. Junction Temperature B V D S S ( N o rm a li z e d ) 0 4 8 12 16 0 5 10 15 20 VDS (Volts) Figure 2: On-Region Characteristics@125°C I D ( A ) VGS=4.5V 5V 10V 6V 5V 5.5V 5.5V 7V Rev.1.0: September 2013 www.aosmd.com Page 3 of 7

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AOV11S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 3 6 9 12 15 0 4 8 12 16 Qg (nC) Figure 8: Gate-Charge Characteristics V G S ( V o lt s ) VDS=480V ID=5.5A 1 10 100 1000 10000 0 100 200 300 400 500 600 VDS (Volts) Figure 9: Capacitance Characteristics C a p a c it a n c e ( p F ) Ciss Coss Crss 0.01 0.1 1 10 100 1 10 100 1000 VDS (Volts) I D ( A m p s ) Figure 11: Maximum Forward Biased Safe Operating Area for AOT(B)11S60 (Note F) 10µs 10ms 1msDC RDS(ON) limited TJ(Max)=150°C TC=25°C 100µs 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 7: Body-Diode Characteristics (Note E) I S ( A ) 25°C 125°C 0 1 2 3 4 5 6 0 100 200 300 400 500 600 VDS (Volts) Figure 10: Coss stored Energy E o s s (u J ) Eoss 0 30 60 90 120 25 50 75 100 125 150 175 TCASE (°C) Figure 12: Avalanche energy E A S (m J ) Rev.1.0: September 2013 www.aosmd.com Page 4 of 7

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AOV11S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 2 4 6 8 10 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) C u rr e n t ra ti n g I D (A ) 0 400 800 1200 1600 2000 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to- Case (Note F) P o w e r (W ) TJ(Max)=150°C TC=25°C 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note F) Z θθ θθJ C N o rm a li z e d T ra n s ie n t T h e rm a l R e s is ta n c e D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.8°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Single Pulse Ton T PD Rev.1.0: September 2013 www.aosmd.com Page 5 of 7

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AOV11S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0.00001 0.0001 0.001 0.01 0.1 1 10 100 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 Pulse Width (s) Figure 17: Normalized Maximum Transient Thermal Impedance (Note G) Z θθ θθJ C N o rm a li z e d T ra n s ie n t T h e rm a l R e s is ta n c e D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Single Pulse 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 1000 10000 Pulse Width (s) Figure 16: Single Pulse Power Rating Junction-to-Ambient (Note G) P o w e r (W ) TJ(Max)=150°C TA=25°C Ton T PD Rev.1.0: September 2013 www.aosmd.com Page 6 of 7

AOV11S60 Reviews

Average User Rating
5 / 5 (135)
★ ★ ★ ★ ★
5 ★
122
4 ★
14
3 ★
0
2 ★
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1 ★
0

Mose*****nder

January 2, 2020

Good quality, buy back and then use, with the newly bought hard disk, very stable, at any time you can check things, not occupy space, very convenient.

Elis*****strada

October 27, 2019

I have always get a fast response from Heisener with my orders. As a small business owner I greatly appreciate that I can order as little as 1 item as opposed to other companies who require you place a larger minimum order.

Zah*****Rama

October 2, 2019

So easy to do business with Heisener and they generally have stock on the items we need.

Elli*****Murphy

August 24, 2019

These did exactly what I needed them to do. Electricity only flows in one direction. Perfect.

Ember *****charyya

August 22, 2019

Fast shipping. Got it in few dayss from Hong Kong

Ani***** Howe

July 30, 2019

Heisener parametric search for specific components is by far better than their competitors.

Oti*****hurch

July 25, 2019

These are a great value at this price.

Tre***** Babu

July 15, 2019

This seems to be a good set. I'll update more when I've tested these and can review their working quality.

Giov***** Bawa

July 9, 2019

These very economical items will repair my expensive contactors with just a quick connection.

Jayl*****Sarna

June 29, 2019

Awesome!!! great prices, easy to order and great service, thank you!

AOV11S60 Guarantees

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