APT1608F3C

Page 1

Page 2

© 2017 Kingbright. All Rights Reserved. Spec No: DSAH3781 / 1203001654 Rev No: V.8A Date: 08/14/2017 Page 1 / 4 DESCRIPTIONS F3 Made with Gallium Arsenide Infrared Emitting diodes FEATURES 1.6 mm x 0.8 mm SMD LED, 0.75 mm thickness Mechanically and spectrally matched to phototransistor Package: 2000pcs / reel Moisture sensitivity level : 3 RoHS compliant APPLICATIONS Backlight Status indicator Home and smart appliances Wearable and portable devices Healthcare applications PACKAGE DIMENSIONS SELECTION GUIDE Notes: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. Luminous intensity / luminous flux: +/-15%. * Luminous intensity value is traceable to CIE127-2007 standards. APT1608F3C 1.6 x 0.8 mm Infrared Emitting Diode RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1) Part Number Emitting Color (Material) Lens Type Po (mW/sr) @ 20mA [2] Viewing Angle [1] Min. Typ. 2θ1/2 APT1608F3C Infrared (GaAlAs) Water Clear 1.2 3 *0.8 *2 150° Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications.

Page 3

© 2017 Kingbright. All Rights Reserved. Spec No: DSAH3781 / 1203001654 Rev No: V.8A Date: 08/14/2017 Page 2 / 4 ELECTRICAL / OPTICAL CHARACTERISTICS at TA=25°C APT1608F3C Parameter Symbol Emitting Color Value Unit Typ. Max. Wavelength at Peak Emission IF = 20mA λpeak Infrared 940 - nm Spectral Bandwidth at 50% Φ REL MAX IF = 20mA Δλ Infrared 50 - nm Capacitance C Infrared 90 - pF Forward Voltage IF = 20mA VF [1] Infrared 1.2 1.6 V Reverse Current (VR = 5V) IR Infrared - 10 uA Temperature Coefficient of Wavelength IF = 20mA, -10°C ≤ T ≤ 85°C TCλ Infrared 0.3 - nm/°C Temperature Coefficient of VF IF = 20mA, -10°C ≤ T ≤ 85°C TCV Infrared -1.2 - mV/°C Notes: 1. Forward voltage: ±0.1V. 2. Wavelength value is traceable to CIE127-2007 standards. 3. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure. ABSOLUTE MAXIMUM RATINGS at TA=25°C Parameter Symbol Unit Power Dissipation PD 90 mW Reverse Voltage VR 5 V Junction Temperature Tj 115 °C Operating Temperature Top -40 to +85 °C Storage Temperature Tstg -40 to +85 °C DC Forward Current IF 50 mA Peak Forward Current IFM [1] 1200 mA Thermal Resistance (Junction / Ambient) Rth JA [2] 320 °C/W Thermal Resistance (Junction / Solder point) Rth JS [2] 220 °C/W Value Electrostatic Discharge Threshold (HBM) - 8000 V Notes: 1. 1/100 Duty Cycle, 10μs Pulse Width. 2. Rth JA ,Rth JS Results from mounting on PC board FR4 (pad size ≥ 16 mm 2 per pad). 3. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033.

Page 4

© 2017 Kingbright. All Rights Reserved. Spec No: DSAH3781 / 1203001654 Rev No: V.8A Date: 08/14/2017 Page 3 / 4 TECHNICAL DATA 0% 20% 40% 60% 80% 100% 550 600 650 700 750 800 850 900 950 1000 1050 Ta = 25 °C F3 Wavelength (nm) R el a tiv e In te n si ty ( a . u .) RELATIVE INTENSITY vs. WAVELENGTH INFRARED TAPE SPECIFICATIONS (units : mm) REEL DIMENSION (units : mm) REFLOW SOLDERING PROFILE for LEAD-FREE SMD PROCESS 0.50.5 0.0 -90° -75° -60° -45° -30° -15° 75° 60° 45° 30° 0° 15° 90° 1.01.0 Ta = 25 °C SPATIAL DISTRIBUTION APT1608F3C Notes: 1. Don't cause stress to the LEDs while it is exposed to high temperature. 2. The maximum number of reflow soldering passes is 2 times. 3. Reflow soldering is recommended. Other soldering methods are not recommended as they might cause damage to the product. 0 10 20 30 40 50 0.8 1.0 1.2 1.4 1.6 1.8 Ta = 25 °C Forward voltage (V) F or w ar d cu rr en t (m A ) 0.0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50 Ta = 25 °C Forward current (mA) R ad ia nt in te ns ity n or m al is ed at 2 0m A 0 10 20 30 40 50 60 70 -40 -20 0 20 40 60 80 100 Ambient temperature (°C) P er m is si bl e fo rw ar d cu rr en t (m A ) 0.0 0.5 1.0 1.5 2.0 2.5 -40 -20 0 20 40 60 80 100 Ambient temperature (°C) R ad ia nt in te ns ity n or m al is ed at T a = 2 5 °C Forward Current vs. Forward Voltage Radiant Intensity vs. Forward Current Radiant Intensity vs. Ambient Temperature Forward Current Derating Curve