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APT28M120B2

hot APT28M120B2

APT28M120B2

For Reference Only

Part Number APT28M120B2
Manufacturer Microsemi Corporation
Description MOSFET N-CH 1200V 29A T-MAX
Datasheet APT28M120B2 Datasheet
Package TO-247-3 Variant
In Stock 230
Unit Price $ 24.05 *
Please request a real-time quote with our sales team. The unit price would influenced by the quantity requested and the supply sources. Thank you!
Lead Time Can Ship Immediately
Estimated Delivery Time Sep 20 - Sep 25 (Choose Expedited Shipping)

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APT28M120B2

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APT28M120B2 Specifications

ManufacturerMicrosemi Corporation
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet APT28M120B2 Datasheet
PackageTO-247-3 Variant
SeriesPOWER MOS 8?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs300nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds9670pF @ 25V
Power Dissipation (Max)1135W (Tc)
Rds On (Max) @ Id, Vgs560 mOhm @ 14A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageT-MAX™ [B2]
Package / CaseTO-247-3 Variant

APT28M120B2 Guarantees

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Quality Guarantee

Quality Guarantees

We provide 30 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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hotAPT28M120B2 APT13003DZTR-G1 Diodes Incorporated, TRANS NPN 450V 1.5A TO92, Package:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Series:POWER MOS 8? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):1200V, Current - Continuous Drain (Id) @ 25°C:29A (Tc), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs(th) (Max) @ Id:5V @ 2.5mA, Gate Charge (Qg) (Max) @ Vgs:300nC @ 10V, Vgs (Max):±30V, Input Capacitance (Ciss) (Max) @ Vds:9670pF @ 25V, Power Dissipation (Max):1135W (Tc), Rds On (Max) @ Id, Vgs:560 mOhm @ 14A, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:T-MAX™ [B2], Package / Case:TO-247-3 Variant
hotAPT28M120B2 3EZ43D10/TR12 Microsemi Corporation, DIODE ZENER 43V 3W DO204AL, Package:DO-204AL, DO-41, Axial, Series:POWER MOS 8? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):1200V, Current - Continuous Drain (Id) @ 25°C:29A (Tc), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs(th) (Max) @ Id:5V @ 2.5mA, Gate Charge (Qg) (Max) @ Vgs:300nC @ 10V, Vgs (Max):±30V, Input Capacitance (Ciss) (Max) @ Vds:9670pF @ 25V, Power Dissipation (Max):1135W (Tc), Rds On (Max) @ Id, Vgs:560 mOhm @ 14A, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:T-MAX™ [B2], Package / Case:TO-247-3 Variant
hotAPT28M120B2 APT30SCD120S Microsemi Corporation, DIODE SCHOTTKY 1.2KV 99A D3PAK, Package:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Series:POWER MOS 8? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):1200V, Current - Continuous Drain (Id) @ 25°C:29A (Tc), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs(th) (Max) @ Id:5V @ 2.5mA, Gate Charge (Qg) (Max) @ Vgs:300nC @ 10V, Vgs (Max):±30V, Input Capacitance (Ciss) (Max) @ Vds:9670pF @ 25V, Power Dissipation (Max):1135W (Tc), Rds On (Max) @ Id, Vgs:560 mOhm @ 14A, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:T-MAX™ [B2], Package / Case:TO-247-3 Variant
hotAPT28M120B2 APT30S20BG Microsemi Corporation, DIODE SCHOTTKY 200V 45A TO247, Package:TO-247-2, Series:POWER MOS 8? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):1200V, Current - Continuous Drain (Id) @ 25°C:29A (Tc), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs(th) (Max) @ Id:5V @ 2.5mA, Gate Charge (Qg) (Max) @ Vgs:300nC @ 10V, Vgs (Max):±30V, Input Capacitance (Ciss) (Max) @ Vds:9670pF @ 25V, Power Dissipation (Max):1135W (Tc), Rds On (Max) @ Id, Vgs:560 mOhm @ 14A, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:T-MAX™ [B2], Package / Case:TO-247-3 Variant
hotAPT28M120B2 APT2X101DQ120J Microsemi Corporation, DIODE MODULE 1.2KV 100A ISOTOP, Package:SOT-227-4, miniBLOC, Series:POWER MOS 8? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):1200V, Current - Continuous Drain (Id) @ 25°C:29A (Tc), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs(th) (Max) @ Id:5V @ 2.5mA, Gate Charge (Qg) (Max) @ Vgs:300nC @ 10V, Vgs (Max):±30V, Input Capacitance (Ciss) (Max) @ Vds:9670pF @ 25V, Power Dissipation (Max):1135W (Tc), Rds On (Max) @ Id, Vgs:560 mOhm @ 14A, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:T-MAX™ [B2], Package / Case:TO-247-3 Variant

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