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AT-30511-BLKG

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AT-30511-BLKG

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Part Number AT-30511-BLKG
Manufacturer Broadcom Limited
Description TRANS NPN BIPO 5.5V 8MA SOT-143
Datasheet AT-30511-BLKG Datasheet
Package TO-253-4, TO-253AA
In Stock 387 piece(s)
Unit Price $ 0.1755 *
Lead Time Can Ship Immediately
Estimated Delivery Time Aug 6 - Aug 11 (Choose Expedited Shipping)
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Part Number # AT-30511-BLKG (Transistors - Bipolar (BJT) - RF) is manufactured by Broadcom Limited and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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AT-30511-BLKG Specifications

ManufacturerBroadcom Limited
CategoryDiscrete Semiconductor Products - Transistors - Bipolar (BJT) - RF
Datasheet AT-30511-BLKGDatasheet
PackageTO-253-4, TO-253AA
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)5.5V
Frequency - Transition-
Noise Figure (dB Typ @ f)1.1dB ~ 1.4dB @ 900MHz
Gain14dB ~ 16dB
Power - Max100mW
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 1mA, 2.7V
Current - Collector (Ic) (Max)8mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-253-4, TO-253AA
Supplier Device PackageSOT-143

AT-30511-BLKG Datasheet

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Agilent AT-30511, AT-30533 Low Current, High Performance NPN Silicon Bipolar Transistors Data Sheet Description Agilent’s AT-30511 and AT-30533 are high performance NPN bipolar transistors that have been optimized for maximum fT at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-30533 uses the 3 lead SOT-23, while the AT-30511 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques. The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multi- plicity of tasks. The 5 emitter finger interdigitated geometry yields an extremely fast transistor with high gain and low operating currents. Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 13 dB or more associated gain at a 2.7 V, 1 mA bias. Voltage breakdowns are high enough for use at 5 volts. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications. The AT-3 series bipolar transistors are fabricated using an optimized version of Agilent’s 10 GHz fT, 30 GHz fMAX Self-Aligned- Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices. Outline Drawing BASE EMITTER EMITTER COLLECTOR BASE EMITTER COLLECTOR 305 305 SOT-23 (AT-30533) SOT-143 (AT-30511) Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-30511: 1.1 dB NF, 16 dB GA AT-30533: 1.1 dB NF, 13 dB GA • Characterized for End-Of- Life Battery Use (2.7 V) • SOT-23 and SOT-143 SMT Plastic Packages • Tape-And-Reel Packaging Option Available • Lead-free Option Available

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2 AT-30511, AT-30533 Absolute Maximum Ratings Symbol Parameter Units Absolute Maximum [1] VEBO Emitter-Base Voltage V 1.5 VCBO Collector-Base Voltage V 11 VCEO Collector-Emitter Voltage V 5.5 IC Collector Current mA 8 PT Power Dissipation [2] [3] mW 100 Tj Junction Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. TMounting Surface = 25°C. 3. Derate at 1.82 mW/°C for TC > 95°C. Thermal Resistance [2] : θ jc = 550°C/W Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a Compromise Match Between Best Noise Figure, Best Gain, Stability, a Practical, Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and AT-310 Geometries. 1000 pF VBB W = 10 L = 1860 W = 10 L = 1000 W = 30 L = 100 W = 30 L = 100 W = 10 L = 1860 1000 pF VCC 25 Ω W = 10 L = 1025 TEST CIRCUIT A: W = 20 L = 100 TEST CIRCUIT B: W = 20 L = 200 x 2 NOT TO SCALE TEST CIRCUIT BOARD MATL = 0.062" FR-4 (ε = 4.8) DIMENSIONS IN MILS Electrical Specifications, TA = 25°C AT-30511 AT-30533 Symbol Parameters and Test Conditions Units Min Typ Max Min Typ Max NF Noise Figure VCE = 2.7 V, IC = 1 mA f = 0.9 GHz dB 1.1 [1] 1.4 [1] 1.1 [2] 1.4 [2] GA Associated Gain VCE = 2.7 V, IC = 1 mA f = 0.9 GHz dB 14 [1] 16 [1] 11 [2] 13 [2] hFE Forward Current VCE = 2.7 V - 70 300 70 300 Transfer Ratio IC = 1 mA ICBO Collector Cutoff Current VCB = 3 V µA 0.03 0.2 0.03 0.2 IEBO Emitter Cutoff Current VEB = 1 V µA 0.1 1.5 0.1 1.5 Notes: 1. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.4 dB; output loss = 0.4 dB. 2. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.4 dB; output loss = 0.4 dB.

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3 AT-30511, AT-30533 Characterization Information, TA = 25°C AT-30511 AT-30533 Symbol Parameters and Test Conditions Units Typ Typ P1dB Power at 1 dB Gain Compression (opt tuning) VCE = 2.7 V, IC = 5 mA f = 0.9 GHz dBm 7 7 G1dB Gain at 1 dB Gain Compression (opt tuning) VCE = 2.7 V, IC = 5 mA f = 0.9 GHz dB 16.5 15 IP3 Output Third Order Intercept Point, VCE = 2.7 V, IC = 5 mA (opt tuning) f = 0.9 GHz dBm 17 17 |S21|E 2 Gain in 50 Ω System; VCE = 2.7 V, IC = 1 mA f = 0.9 GHz dB 10 9 CCB Collector-Base Capacitance VCB = 3V, f = 1 MHz pF 0.04 0.04 P 1 d B ( d B m ) 0 0 FREQUENCY (GHz) 1.0 1.5 10 4 2 0.5 2.5 6 2.0 8 5 mA 2 mA G 1 d B ( d B m ) 0 0 FREQUENCY (GHz) 1.0 1.5 25 10 5 0.5 2.5 15 2.0 20 5 mA 2 mA G 1 d B ( d B m ) 0 0 FREQUENCY (GHz) 1.0 1.5 25 10 5 0.5 2.5 15 2.0 20 5 mA 2 mA Typical Performance Note: 1. Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and including circuit losses. Figure 7. AT-30533 1 dB Compressed Gain vs. Frequency and Current at VCE = 2.7 V. Figure 6. AT-30511 1 dB Compressed Gain vs. Frequency and Current at VCE = 2.7 V. Figure 5. AT-30511 and AT-30533 Power at 1 dB Gain Compression vs. Frequency and Current at VCE = 2.7 V. Figure 4. AT-30533 Associated Gain at Optimum Noise Match vs. Frequency and Current at VCE = 2.7 V. Figure 3. AT-30511 Associated Gain at Optimum Noise Match vs. Frequency and Current at VCE = 2.7 V. Figure 2. AT-30511 and AT-30533 Minimum Noise Figure and Amplifier NF[1] vs. Frequency and Current at VCE = 2.7 V. N O IS E F IG U R E ( d B ) 0 0 FREQUENCY (GHz) 1.0 1.5 2.5 1.0 0.5 0.5 2.5 1.5 2.0 2.0 1 mA 5 mA AMPLIFIER NF NF MIN. G a ( d B ) 0 0 FREQUENCY (GHz) 1.0 1.5 25 10 5 0.5 2.5 15 2.0 20 5 mA 1 mA G a ( d B ) 0 0 FREQUENCY (GHz) 1.0 1.5 25 10 5 0.5 2.5 15 2 20 5 mA 1 mA

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4 P 1 d B ( d B m ) 0 -4 FREQUENCY (GHz) 1.0 1.5 6 0 -2 0.5 2.5 2 2.0 4 2 mA 5 mA G 1 d B ( d B m ) 0 0 FREQUENCY (GHz) 1.0 1.5 25 10 5 0.5 2.5 15 2.0 20 5 mA 2 mA Figure 13. AT-30533 1 dB Compressed Gain vs. Frequency and Current at VCE = 1 V. Figure 12. AT-30511 1 dB Compressed Gain vs. Frequency and Current at VCE = 1 V. Figure 11. AT-30511 and AT-30533 Power at 1 dB Gain Compression vs. Frequency and Current at VCE = 1 V. AT-30511, AT-30533 Typical Performance, continued P 1 d B ( d B m ) 0 0 FREQUENCY (GHz) 1.0 1.5 10 4 2 0.5 2.5 6 2.0 8 2 mA 5 mA Figure 8. AT-30511 and AT-30533 Power at 1 dB Gain Compression vs. Frequency and Current at VCE = 5 V. Figure 9. AT-30511 1 dB Compressed Gain vs. Frequency and Current at VCE = 5 V. Figure 10. AT-30533 1 dB Compressed Gain vs. Frequency and Current at VCE = 5 V. G 1 d B ( d B m ) 0 0 FREQUENCY (GHz) 1.0 1.5 25 10 5 0.5 2.5 15 2.0 20 5 mA 2 mA G 1 d B ( d B m ) 0 0 FREQUENCY (GHz) 1.0 1.5 25 10 5 0.5 2.5 15 2.0 20 5 mA 2 mA G a ( d B m ) -50 0 TEMPERATURE (°C) 50 25 10 5 0 100 15 20 0 2.5 1.0 0.5 1.5 2.0 N O IS E F IG U R E ( d B ) Ga NF G a ( d B m ) -50 0 TEMPERATURE (°C) 50 25 10 5 0 100 15 20 0 2.5 1.0 0.5 1.5 2.0 N O IS E F IG U R E ( d B ) Ga NF IM 3 ( d B c ) -9 -80 POWER PER TONE (dBm) -3 0 0 -60 -6 6 -40 3 -20 IM3 (dBc) IM5 (dBc) IM7 (dBc) Figure 14. AT-30511 Noise Figure and Associated Gain at VCE = 2.7 V, IC = 1 mA vs. Temperature in Test Circuit, Figure 1. (Circuit Losses De-embedded) Figure 16. AT-30511 and AT-30533 Intermodulation Products vs. Output Power at VCE = 2.7 V, IC = 10 mA, 900 MHz with Optimal Tuning. Figure 15. AT-30533 Noise Figure and Associated Gain at VCE = 2.7 V, IC = 1 mA vs. Temperature in Test Circuit, Figure 1. (Circuit Losses De-embedded) G 1 d B ( d B m ) 0 0 FREQUENCY (GHz) 1.0 1.5 25 10 5 0.5 2.5 15 2.0 20 5 mA 2 mA

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5 AT-30533 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 1 V, IC = 1 mA ΓOPTFreq Fmin[1] Rn GHz dB Mag Ang 0.5[2] 0.3 0.94 7 1.02 0.9 0.4 0.89 16 0.86 1.8 0.9 0.75 43 0.58 2.4 1.3 0.65 65 0.38 Notes: 1. Matching constraints may make Fmin values associated with high |Γopt| values unachievable in physical circuits. See Fig. 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. AT-30511 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 1 V, IC = 1 mA ΓOPTFreq Fmin[1] Rn GHz dB Mag Ang 0.5[2] 0.3 0.96 10 1.49 0.9 0.4 0.92 19 1.33 1.8 0.9 0.83 43 0.98 2.4 1.3 0.76 60 0.74 Notes: 1. Matching constraints may make Fmin values associated with high |Γopt| values unachievable in physical circuits. See Fig. 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. AT-30533 Typical Scattering Parameters, VCE = 1 V, IC = 1 mA, Common Emitter, ZO = 50 Ω Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.95 -5 10.90 3.51 174 -38.36 0.01 87 0.99 -3 0.5 0.91 -25 10.32 3.28 150 -25.08 0.06 73 0.95 -14 0.9 0.77 -41 9.44 2.97 128 -20.95 0.09 63 0.89 -24 1.0 0.73 -45 9.03 2.83 124 -20.21 0.10 61 0.88 -25 1.5 0.55 -62 7.75 2.44 102 -18.13 0.12 54 0.80 -33 1.8 0.46 -71 6.94 2.22 91 -17.33 0.14 51 0.77 -36 2.0 0.41 -76 6.51 2.12 85 -16.84 0.14 50 0.74 -38 2.4 0.30 -85 5.45 1.87 73 -16.05 0.16 49 0.71 -41 3.0 0.17 -95 4.26 1.63 57 -14.80 0.18 49 0.68 -46 4.0 0.02 -139 2.71 1.37 37 -12.58 0.24 48 0.65 -57 5.0 0.12 61 1.56 1.20 19 -10.14 0.31 45 0.62 -69 AT-30511 Typical Scattering Parameters, VCE = 1 V, IC = 1 mA, Common Emitter, ZO = 50 Ω Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.97 -5 10.84 3.48 175 -39.42 0.01 86 0.99 -2 0.5 0.95 -24 10.51 3.35 155 -25.87 0.05 72 0.95 -14 0.9 0.85 -42 9.96 3.15 137 -21.46 0.08 61 0.92 -24 1.0 0.83 -46 9.66 3.04 133 -20.71 0.09 58 0.91 -26 1.5 0.70 -67 8.71 2.73 113 -18.44 0.12 46 0.84 -36 1.8 0.63 -78 8.06 2.53 102 -17.69 0.13 41 0.80 -40 2.0 0.59 -85 7.75 2.44 96 -17.27 0.14 37 0.77 -43 2.4 0.50 -100 6.73 2.17 84 -16.79 0.14 32 0.73 -48 3.0 0.39 -122 5.58 1.90 67 -16.32 0.15 27 0.68 -53 4.0 0.29 -161 3.97 1.58 45 -15.87 0.16 20 0.63 -63 5.0 0.27 153 2.64 1.36 25 -15.47 0.17 20 0.61 -72 G A IN ( d B ) 0 0 FREQUENCY (GHz) 2 3 30 1 5 10 4 20 MSG MAG S21 MSG Figure 17. AT-30511 Gains vs. Frequency at VCE = 1 V, IC = 1 mA. G A IN ( d B ) 0 0 FREQUENCY (GHz) 2 3 30 1 5 10 4 20 MSG MAG S21 MSG Figure 18. AT-30533 Gains vs. Frequency at VCE = 2.7 V, IC = 1 mA.

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6 AT-30533 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 2.7 V, IC = 1 mA ΓOPTFreq Fmin[1] Rn GHz dB Mag Ang 0.5[2] 0.3 0.94 7 1.02 0.9 0.4 0.89 16 0.88 1.8 0.9 0.75 43 0.58 2.4 1.3 0.65 65 0.38 Notes: 1. Matching constraints may make Fmin values associated with high |Γopt| values unachievable in physical circuits. See Fig. 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. AT-30511 Typical Scattering Parameters, VCE = 2.7 V, IC = 1 mA, Common Emitter, ZO = 50 Ω Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.97 -5 10.88 3.50 175 -40.13 0.01 86 0.999 -2 0.5 0.95 -23 10.58 3.38 156 -26.71 0.05 74 0.96 -13 0.9 0.86 -39 10.09 3.20 139 -22.28 0.08 63 0.93 -23 1.0 0.84 -43 9.83 3.10 135 -21.51 0.08 60 0.92 -25 1.5 0.72 -63 8.94 2.80 115 -19.15 0.11 49 0.85 -34 1.8 0.65 -73 8.32 2.60 105 -18.28 0.12 43 0.82 -38 2.0 0.61 -80 8.06 2.53 99 -17.83 0.13 40 0.79 -41 2.4 0.52 -93 7.06 2.25 86 -17.29 0.14 35 0.75 -46 3.0 0.41 -114 5.92 1.98 70 -16.72 0.15 30 0.70 -51 4.0 0.30 -150 4.35 1.65 48 -16.13 0.16 23 0.66 -61 5.0 0.26 165 3.06 1.42 28 -15.65 0.16 22 0.63 -69 AT-30511 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 2.7 V, IC = 1 mA ΓOPTFreq Fmin[1] Rn GHz dB Mag Ang 0.5[2] 0.3 0.96 10 1.49 0.9 0.4 0.92 19 1.33 1.8 0.9 0.83 43 0.98 2.4 1.3 0.76 60 0.74 Notes: 1. Matching constraints may make Fmin values associated with high |Γopt| values unachievable in physical circuits. See Fig. 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. AT-30533 Typical Scattering Parameters, VCE = 2.7 V, IC = 1 mA, Common Emitter, ZO = 50 Ω Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.95 -5 10.76 3.45 174 -39.49 0.01 87 0.999 -2 0.5 0.92 -23 10.21 3.24 151 -26.05 0.05 74 0.95 -13 0.9 0.78 -39 9.42 2.96 130 -21.78 0.08 64 0.91 -22 1.0 0.75 -42 9.04 2.83 126 -21.05 0.09 63 0.90 -23 1.5 0.58 -59 7.83 2.46 105 -18.88 0.11 55 0.83 -31 1.8 0.49 -66 7.04 2.25 94 -18.08 0.12 53 0.79 -34 2.0 0.44 -71 6.64 2.15 88 -17.58 0.13 52 0.77 -36 2.4 0.33 -79 5.59 1.90 76 -16.77 0.15 51 0.74 -39 3.0 0.21 -87 4.40 1.66 60 -15.50 0.17 51 0.71 -44 4.0 0.05 -88 2.87 1.39 40 -13.20 0.22 52 0.68 -54 5.0 0.09 47 1.72 1.22 22 -10.67 0.29 49 0.66 -66 Figure 19. AT-30511 Gains vs. Frequency at VCE = 2.7 V, IC = 1 mA. G A IN ( d B ) 0 0 FREQUENCY (GHz) 2 3 30 1 5 10 4 20 MSG MAG S21 Figure 20. AT-30511- Gains vs. Frequency at VCE = 2.7 V, IC = 1 mA. G A IN ( d B ) 0 0 FREQUENCY (GHz) 2 3 30 1 5 10 4 20 MSG MAG S21 MSG

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7 AT-30533 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 2.7 V, IC = 5 mA ΓOPTFreq Fmin[1] Rn GHz dB Mag Ang 0.5[2] 1.1 0.71 8 0.78 0.9 1.2 0.61 16 0.66 1.8 1.5 0.42 39 0.41 2.4 1.8 0.28 57 0.25 Notes: 1. Matching constraints may make Fmin values associated with high |Γopt| values unachievable in physical circuits. See Fig. 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. AT-30533 Typical Scattering Parameters, VCE = 2.7 V, IC = 5 mA, Common Emitter, ZO = 50 Ω Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.84 -12 22.26 12.98 164 -39.96 0.01 82 0.98 -5 0.5 0.57 -39 18.54 8.46 121 -28.03 0.04 71 0.80 -18 0.9 0.37 -46 14.97 5.60 100 -24.09 0.06 70 0.73 -22 1.0 0.34 -46 14.20 5.13 96 -23.32 0.07 69 0.72 -22 1.5 0.23 -43 11.24 3.65 81 -20.30 0.10 68 0.69 -26 1.8 0.20 -38 9.85 3.11 73 -18.88 0.11 67 0.68 -28 2.0 0.19 -35 9.05 2.84 69 -18.02 0.13 66 0.68 -30 2.4 0.17 -27 7.70 2.43 61 -16.50 0.15 64 0.67 -33 3.0 0.15 -17 6.12 2.02 50 -14.57 0.19 61 0.66 -39 4.0 0.15 -2 4.30 1.64 34 -11.90 0.25 55 0.64 -49 5.0 0.17 11 3.07 1.42 19 -9.66 0.33 47 0.61 -61 AT-30511 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 2.7 V, IC = 5 mA ΓOPTFreq Fmin[1] Rn GHz dB Mag Ang 0.5[2] 1.1 0.77 9 1.10 0.9 1.2 0.71 18 0.96 1.8 1.5 0.60 45 0.66 2.4 1.8 0.51 65 0.47 Notes: 1. Matching constraints may make Fmin values associated with high |Γopt| values unachievable in physical circuits. See Fig. 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. AT-30511 Typical Scattering Parameters, VCE = 2.7 V, IC = 5 mA, Common Emitter, ZO = 50 Ω Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.88 -11 22.49 13.32 169 -40.50 0.01 83 0.97 -5 0.5 0.70 -48 20.42 10.49 134 -28.45 0.04 64 0.82 -22 0.9 0.49 -72 17.77 7.73 111 -25.24 0.05 57 0.70 -30 1.0 0.46 -77 17.09 7.15 107 -24.70 0.06 55 0.69 -31 1.5 0.30 -100 14.44 5.27 89 -22.62 0.07 53 0.62 -35 1.8 0.24 -112 13.10 4.52 81 -21.65 0.08 52 0.59 -37 2.0 0.21 -120 12.31 4.13 76 -21.05 0.09 52 0.58 -39 2.4 0.16 -140 10.94 3.52 67 -20.01 0.10 50 0.57 -42 3.0 0.13 -172 9.18 2.88 55 -18.55 0.12 48 0.55 -46 4.0 0.15 137 7.03 2.25 38 -16.57 0.15 44 0.53 -55 5.0 0.21 106 5.44 1.87 22 -14.88 0.18 39 0.52 -64 G A IN ( d B ) 0 0 FREQUENCY (GHz) 2 3 30 1 5 10 4 20 MSG MAG S21 MSG Figure 22. AT-30533 Gains vs. Frequency at VCE = 2.7 V, IC = 5 mA. Figure 21. AT-30511 Gains vs. Frequency at VCE = 2.7 V, IC = 5 mA. G A IN ( d B ) 0 0 FREQUENCY (GHz) 2 3 30 1 5 10 4 20 MSG MAGS21

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8 AT-30533 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 5 V, IC = 1 mA ΓOPTFreq Fmin[1] Rn GHz dB Mag Ang 0.5[2] 0.3 0.94 7 1.02 0.9 0.4 0.89 16 0.98 1.8 0.9 0.75 43 0.58 2.4 1.3 0.65 65 0.38 Notes: 1. Matching constraints may make Fmin values associated with high |ΓOPT| values unachievable in physical circuits. See Figure 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. AT-30533 Typical Scattering Parameters, VCE = 5 V, IC = 1 mA, Common Emitter, ZO = 50 Ω Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.96 -5 10.59 3.38 174 -39.38 0.01 85 0.999 -2 0.5 0.92 -22 10.07 3.19 151 -26.22 0.05 74 0.95 -13 0.9 0.79 -37 9.32 2.92 131 -21.99 0.08 65 0.91 -21 1.0 0.77 -41 8.94 2.80 127 -21.21 0.09 63 0.90 -23 1.5 0.60 -57 7.76 2.44 106 -19.02 0.11 56 0.83 -30 1.8 0.51 -64 7.01 2.24 95 -18.16 0.12 54 0.80 -33 2.0 0.46 -69 6.61 2.14 89 -17.66 0.13 52 0.78 -35 2.4 0.35 -76 5.59 1.90 77 -16.85 0.14 51 0.75 -39 3.0 0.23 -83 4.43 1.66 61 -15.58 0.17 51 0.72 -43 4.0 0.07 -85 2.92 1.40 41 -13.34 0.22 52 0.69 -53 5.0 0.07 38 1.79 1.23 23 -10.85 0.29 49 0.67 -65 AT-30511 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 5 V, IC = 1 mA ΓOPTFreq Fmin[1] Rn GHz dB Mag Ang 0.5[2] 0.3 0.96 10 1.49 0.9 0.4 0.92 19 1.33 1.8 0.9 0.83 43 0.98 2.4 1.3 0.76 60 0.74 Notes: 1. Matching constraints may make Fmin values associated with high |Γopt| values unachievable in physical circuits. See Fig. 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. AT-30511 Typical Scattering Parameters, VCE = 5 V, IC = 1 mA, Common Emitter, ZO = 50 Ω Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.98 -5 10.56 3.37 175 -40.34 0.01 87 0.999 -2 0.5 0.96 -21 10.30 3.27 157 -26.99 0.04 74 0.96 -13 0.9 0.88 -37 9.83 3.10 139 -22.52 0.07 64 0.93 -22 1.0 0.85 -41 9.57 3.01 136 -21.75 0.08 62 0.92 -24 1.5 0.74 -59 8.71 2.73 116 -19.23 0.11 51 0.86 -33 1.8 0.67 -69 8.13 2.55 106 -18.34 0.12 45 0.82 -38 2.0 0.63 -75 7.88 2.48 100 -17.85 0.13 42 0.80 -41 2.4 0.55 -88 6.90 2.21 87 -17.23 0.14 37 0.77 -45 3.0 0.43 -106 5.79 1.95 71 -16.53 0.15 31 0.72 -50 4.0 0.31 -138 4.29 1.64 49 -15.83 0.16 23 0.67 -60 5.0 0.25 178 3.04 1.42 29 -15.38 0.17 20 0.64 -69 G A IN ( d B ) 0 0 FREQUENCY (GHz) 2 3 30 1 5 10 4 20 MSG MAG S21 MSG Figure 24. AT-30533 Gains vs. Frequency at VCE = 5 V, IC = 1 mA. G A IN ( d B ) 0 0 FREQUENCY (GHz) 2 3 30 1 5 10 4 20 MSG MAG S21 Figure 23. AT-30511 Gains vs. Frequency at VCE = 5 V, IC = 1 mA.

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9 AT-30533 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 5 V, IC = 5 mA ΓOPTFreq Fmin[1] Rn GHz dB Mag Ang 0.5[2] 1.1 0.71 8 0.78 0.9 1.2 0.61 16 0.66 1.8 1.5 0.42 39 0.41 2.4 1.8 0.28 57 0.25 Notes: 1. Matching constraints may make Fmin values associated with high |Γopt| values unachievable in physical circuits. See Fig. 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. AT-30533 Typical Scattering Parameters, VCE = 5 V, IC = 5 mA, Common Emitter, ZO = 50 Ω Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.86 -11 22.22 12.92 165 -40.16 0.01 83 0.98 -5 0.5 0.59 -37 18.69 8.60 122 -28.05 0.04 72 0.81 -18 0.9 0.40 -43 15.19 5.75 101 -24.14 0.06 70 0.74 -22 1.0 0.37 -43 14.43 5.27 97 -23.37 0.07 70 0.73 -22 1.5 0.27 -40 11.49 3.75 82 -20.30 0.10 68 0.70 -26 1.8 0.24 -37 10.11 3.20 75 -18.88 0.11 67 0.69 -28 2.0 0.23 -35 9.33 2.93 70 -18.05 0.13 66 0.68 -30 2.4 0.20 -30 7.97 2.50 62 -16.55 0.15 64 0.67 -33 3.0 0.18 -24 6.40 2.09 51 -14.64 0.19 61 0.66 -38 4.0 0.17 -14 4.58 1.70 36 -12.00 0.25 54 0.64 -49 5.0 0.16 -2 3.37 1.47 21 -9.83 0.32 46 0.61 -60 AT-30511 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 5 V, IC = 5 mA ΓOPTFreq Fmin[1] Rn GHz dB Mag Ang 0.5[2] 1.1 0.77 9 1.10 0.9 1.2 0.71 18 0.96 1.8 1.5 0.60 45 0.66 2.4 1.8 0.51 65 0.47 Notes: 1. Matching constraints may make Fmin values associated with high |Γopt| values unachievable in physical circuits. See Fig. 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. AT-30511 Typical Scattering Parameters, VCE = 5 V, IC = 5 mA, Common Emitter, ZO = 50 Ω Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.90 -10 22.26 12.98 170 -40.75 0.01 82 0.97 -5 0.5 0.74 -43 20.41 10.49 136 -28.46 0.04 66 0.83 -22 0.9 0.53 -66 17.93 7.88 113 -25.18 0.06 58 0.72 -30 1.0 0.49 -70 17.28 7.31 109 -24.53 0.06 57 0.70 -31 1.5 0.33 -89 14.72 5.45 91 -22.46 0.08 54 0.63 -36 1.8 0.27 -99 13.41 4.68 83 -21.45 0.08 53 0.60 -38 2.0 0.24 -105 12.64 4.29 78 -20.87 0.09 52 0.59 -39 2.4 0.18 -120 11.27 3.66 69 -19.79 0.10 50 0.57 -42 3.0 0.12 -147 9.54 3.00 57 -18.34 0.12 48 0.55 -46 4.0 0.11 154 7.41 2.35 40 -16.45 0.15 43 0.53 -55 5.0 0.17 114 5.86 1.96 24 -14.84 0.18 38 0.52 -63 G A IN ( d B ) 0 0 FREQUENCY (GHz) 2 3 30 1 5 10 4 20 MSG MAG S21 Figure 25. AT-30511 Gains vs. Frequency at VCE = 5 V, IC = 5 mA. G A IN ( d B ) 0 0 FREQUENCY (GHz) 2 3 30 1 5 10 4 20 MSG MAG S21 MSG Figure 26. AT-30533 Gains vs. Frequency at VCE = 5 V, IC = 5 mA.

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Brys*****guilar

July 15, 2020

No problem in making an order and will see how the shipping goes.

Fos***** Case

July 7, 2020

Excellent service over extended period of time. Incredibly fast shipping, never any errors. Couldn't be more pleased.

Kaden*****trada

July 6, 2020

I like this way to add a project, choose existing project to add components. I use this method frequently to keep track of my projects. Thanks Heisener!

France*****anklin

July 1, 2020

Order arrived to Estonia in 3 days. Item as described. Well packed.

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June 24, 2020

A good, reputable company that I will continue to deal with, thank you!

Josia*****karan

June 18, 2020

The items I want are often in stock and available in small quantities.

Lian*****erian

June 15, 2020

Everything is good. Well made terminal blocks. Good consistency and I found no bad ones in the bunch.

Sky*****elton

June 8, 2020

Very professional sellers, they have adopted MSL packaging for different parts.

Ophe*****Benton

June 4, 2020

Great communication with sales. A pleasure to do business with you.

Rai***** Bean

May 31, 2020

Itams as described Fast and cheap shipping.

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