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Part Number AT28C64-25JI
Manufacturer Microchip Technology
Description IC EEPROM 64KBIT 250NS 32PLCC
Datasheet AT28C64-25JI Datasheet
Package 32-LCC (J-Lead)
In Stock 15,328 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Aug 6 - Aug 11 (Choose Expedited Shipping)
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Part Number # AT28C64-25JI (Memory) is manufactured by Microchip Technology and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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AT28C64-25JI Specifications

ManufacturerMicrochip Technology
CategoryIntegrated Circuits (ICs) - Memory
Datasheet AT28C64-25JIDatasheet
Package32-LCC (J-Lead)
Memory TypeNon-Volatile
Memory FormatEEPROM
Memory Size64Kb (8K x 8)
Memory InterfaceParallel
Clock Frequency-
Write Cycle Time - Word, Page1ms
Access Time250ns
Voltage - Supply4.5 V ~ 5.5 V
Operating Temperature-40°C ~ 85°C (TC)
Mounting TypeSurface Mount
Package / Case32-LCC (J-Lead)
Supplier Device Package32-PLCC

AT28C64-25JI Datasheet

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64K (8K x 8) Parallel EEPROMs AT28C64 AT28C64XFeatures • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Internal Control Timer – Automatic Clear Before Write • Direct Microprocessor Control – READY/BUSY Open Drain Output – DATA Polling • Low Power – 30 mA Active Current – 100 µA CMOS Standby Current • High Reliability – Endurance: 104 or 105 Cycles – Data Retention: 10 Years • 5V ± 10% Supply • CMOS and TTL Compatible Inputs and Outputs • JEDEC Approved Byte-wide Pinout • Commercial and Industrial Temperature Ranges Description The AT28C64 is a low-power, high-performance 8,192 words by 8-bit nonvolatile elec- trically erasable and programmable read only memory with popular, easy-to-use fea- tures. The device is manufactured with Atmel’s reliable nonvolatile technology. (continued)1 Rev. 0001H–12/99 Pin Configurations Pin Name Function A0 - A12 Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O7 Data Inputs/Outputs RDY/BUSY Ready/Busy Output NC No Connect DC Don’t Connect TSOP Top View 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 OE A11 A9 A8 NC WE VCC RDY/BUSY (or NC) A12 A7 A6 A5 A4 A3 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 LCC, PLCC Top View Note: PLCC package pins 1 and 17 are DON’T CONNECT. 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 A6 A5 A4 A3 A2 A1 A0 NC I/O0 A8 A9 A11 NC OE A10 CE I/O7 I/O6 4 3 2 1 3 2 3 1 3 0 1 4 1 5 1 6 1 7 1 8 1 9 2 0 I/ O 1 I/ O 2 V S S D C I/ O 3 I/ O 4 I/ O 5 A 7 A 1 2 R D Y /B U S Y ( o r N C ) D C V C C W E N C PDIP, SOIC Top View 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 RDY/BUSY (or NC) A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND VCC WE NC A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3

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The AT28C64 is accessed like a Static RAM for the read or write cycles without the need for external components. Dur- ing a byte write, the address and data are latched inter- nally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. The device includes two methods for detecting the end of a write cycle, level detection of RDY/BUSY (unless pin 1 is N.C.) and DATA Polling of I/O7. Once the end of a write cycle has been detected, a new access for a read or write can begin. The CMOS technology offers fast access times of 120 ns at low power dissipation. When the chip is deselected the standby current is less than 100 µA. Atmel’s AT28C64 has additional features to ensure high quality and manufacturability. The device utilizes error cor- rection internally for extended endurance and for improved data retention characteristics. An extra 32 bytes of EEPROM are available for device identification or tracking. Block Diagram Absolute Maximum Ratings* Temperature under Bias ................................ -55°C to +125°C *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent dam- age to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability Storage Temperature ..................................... -65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V Voltage on OE and A9 with Respect to Ground ...................................-0.6V to +13.5VAT28C64(X)2

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AT28C64(X)Device Operation READ: The AT28C64 is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in a high impedance state whenever CE or OE is high. This dual line control gives designers increased flexibility in preventing bus contention. BYTE WRITE: Writing data into the AT28C64 is similar to writing into a Static RAM. A low pulse on the WE or CE input with OE high and CE or WE low (respectively) ini- tiates a byte write. The address location is latched on the falling edge of WE (or CE); the new data is latched on the rising edge. Internally, the device performs a self-clear before write. Once a byte write has been started, it will automatically time itself to completion. Once a program- ming operation has been initiated and for the duration of tWC, a read operation will effectively be a polling operation. FAST BYTE WRITE: The AT28C64E offers a byte write time of 200 µs maximum. This feature allows the entire device to be rewritten in 1.6 seconds. READY/BUSY: Pin 1 is an open drain RDY/BUSY output that can be used to detect the end of a write cycle. RDY/BUSY is actively pulled low during the write cycle and is released at the completion of the write. The open drain connection allows for OR-tying of several devices to the same RDY/BUSY line. The RDY/BUSY pin is not con- nected for the AT28C64X. DATA POLLING: The AT28C64 provides DATA Polling to signal the completion of a write cycle. During a write cycle, an attempted read of the data being written results in the complement of that data for I/O7 (the other outputs are indeterminate). When the write cycle is finished, true data appears on all outputs. WRITE PROTECTION: Inadvertent writes to the device are protected against in the following ways: (a) VCC sense – if VCC is below 3.8V (typical) the write function is inhibited; (b) VCC power on delay – once VCC has reached 3.8V the device will automatically time out 5 ms (typical) before allowing a byte write; and (c) write inhibit – holding any one of OE low, CE high or WE high inhibits byte write cycles. CHIP CLEAR: The contents of the entire memory of the AT28C64 may be set to the high state by the CHIP CLEAR operation. By setting CE low and OE to 12 volts, the chip is cleared when a 10 msec low pulse is applied to WE. DEVICE IDENTIFICATION: An extra 32 bytes of EEPROM memory are available to the user for device iden- tification. By raising A9 to 12 ± 0.5V and using address locations 1FE0H to 1FFFH the additional bytes may be written to or read from in the same manner as the regular memory array.3

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Notes: 1. X can be VIL or VIH. 2. Refer to AC programming waveforms. 3. VH = 12.0V ± 0.5V. DC and AC Operating Range AT28C64-12 AT28C64-15 AT28C64-20 AT28C64-25 Operating Temperature (Case) Com. 0°C - 70°C 0°C - 70°C 0°C - 70°C 0°C - 70°C Ind. -40°C - 85°C -40°C - 85°C -40°C - 85°C -40°C - 85°C VCC Power Supply 5V ± 10% 5V ± 10% 5V ± 10% 5V ± 10% Operating Modes Mode CE OE WE I/O Read VIL VIL VIH DOUT Write(2) VIL VIH VIL DIN Standby/Write Inhibit VIH X (1) X High Z Write Inhibit X X VIH Write Inhibit X VIL X Output Disable X VIH X High Z Chip Erase VIL VH (3) VIL High Z DC Characteristics Symbol Parameter Condition Min Max Units ILI Input Load Current VIN = 0V to VCC + 1V 10 µA ILO Output Leakage Current VI/O = 0V to VCC 10 µA ISB1 VCC Standby Current CMOS CE = VCC - 0.3V to VCC + 1.0V 100 µA ISB2 VCC Standby Current TTL CE = 2.0V to VCC + 1.0V Com. 2 mA Ind. 3 mA ICC VCC Active Current AC f = 5 MHz; IOUT = 0 mA CE = VIL Com. 30 mA Ind. 45 mA VIL Input Low Voltage 0.8 V VIH Input High Voltage 2.0 V VOL Output Low Voltage IOL = 2.1 mA = 4.0 mA for RDY/BUSY 0.45 V VOH Output High Voltage IOH = -400 µA 2.4 VAT28C64(X)4

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AT28C64(X)AC Read Waveforms(1)(2)(3)(4) Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC. 2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change without impact on tACC. 3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF). 4. This parameter is characterized and is not 100% tested. Input Test Waveforms and Measurement Level Output Test Load Note: 1. This parameter is characterized and is not 100% tested. AC Read Characteristics Symbol Parameter AT28C64-12 AT28C64-15 AT28C64-20 AT28C64-25 UnitsMin Max Min Max Min Max Min Max tACC Address to Output Delay 120 150 200 250 ns tCE (1) CE to Output Delay 120 150 200 250 ns tOE (2) OE to Output Delay 10 60 10 70 10 80 10 100 ns tDF (3)(4) CE or OE High to Output Float 0 45 0 50 0 55 0 60 ns tOH Output Hold from OE, CE or Address, whichever occurred first 0 0 0 0 ns tR, tF < 20 ns Pin Capacitance f = 1 MHz, T = 25°C(1) Symbol Typ Max Units Conditions CIN 4 6 pF VIN = 0V COUT 8 12 pF VOUT = 0V5

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AC Write Waveforms WE Controlled CE Controlled AC Write Characteristics Symbol Parameter Min Max Units tAS, tOES Address, OE Setup Time 10 ns tAH Address Hold Time 50 ns tWP Write Pulse Width (WE or CE) 100 1000 ns tDS Data Setup Time 50 ns tDH, tOEH Data, OE Hold Time 10 ns tCS, tCH CE to WE and WE to CE Setup and Hold Time 0 ns tDB Time to Device Busy 50 ns tWC Write Cycle Time (option available) AT28C64 1 ms AT28C64E 200 µsAT28C64(X)6

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AT28C64(X)Notes: 1. These parameters are characterized and not 100% tested. 2. See “AC Read Characteristics”. Data Polling Waveforms Chip Erase Waveforms tS = tH = 1 µsec (min.) tW = 10 msec (min.) VH = 12.0 ± 0.5V Data Polling Characteristics(1) Symbol Parameter Min Typ Max Units tDH Data Hold Time 10 ns tOEH OE Hold Time 10 ns tOE OE to Output Delay (2) ns tWR Write Recovery Time 0 ns7

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AT28C64(X)AT28C64 Ordering Information tACC (ns) ICC (mA) Ordering Code Package Operation RangeActive Standby 120 30 0.1 AT28C64-12JC AT28C64-12PC AT28C64-12SC AT28C64-12TC 32J 28P6 28S 28T Commercial (0°C to 70°C) 45 0.1 AT28C64-12JI AT28C64-12PI AT28C64-12SI AT28C64-12TI 32J 28P6 28S 28T Industrial (-40°C to 85°C) 150 30 0.1 AT28C64-15JC AT28C64-15PC AT28C64-15SC AT28C64-15TC 32J 28P6 28S 28T Commercial (0°C to 70°C) 45 0.1 AT28C64-15JI AT28C64-15PI AT28C64-15SI AT28C64-15TI 32J 28P6 28S 28T Industrial (-40°C to 85°C) 200 30 0.1 AT28C64-20JC AT28C64-20PC AT28C64-20SC AT28C64-20TC 32J 28P6 28S 28T Commercial (0°C to 70°C) 45 0.1 AT28C64-20JI AT28C64-20PI AT28C64-20SI AT28C64-20TI 32J 28P6 28S 28T Industrial (-40°C to 85°C) 250 30 0.1 AT28C64-25JC AT28C64-25PC AT28C64-25SC AT28C64-25TC 32J 28P6 28S 28T Commercial (0°C to 70°C) 45 0.1 AT28C64-25JI AT28C64-25PI AT28C64-25SI AT28C64-25TI 32J 28P6 28S 28T Industrial (-40°C to 85°C)9 Package Type 32J 32-lead, Plastic J-leaded Chip Carrier (PLCC) 28P6 28-lead, 0.600" Wide, Plastic Dull Inline Package (PDIP) 28S 28-lead, 0.300" Wide, Plastic Gull Wing, Small Outline (SOIC) 28T 28-lead, Plastic Thin Small Outline Package (TSOP) Options Blank Standard Device: Endurance = 10K Write Cycles; Write Time = 1 ms E High Endurance Option: Endurance = 100K Write Cycles; Write Time = 200 µs

AT28C64-25JI Reviews

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July 9, 2020

This seems to be a good set. I'll update more when I've tested these and can review their working quality.


July 6, 2020

Very pleased with the parts from this company. First class service. Thanks!


June 25, 2020

Went well this time Now have the IC and very pleased.


June 24, 2020

Works as expected. Fits good in circuit board, not lose or slipping around.


June 24, 2020

Purchased this in May and didn't use it until last week. worked and all was good.


June 18, 2020

Solved my electrical back feed problems on my alternator.


June 14, 2020

Didn’t need so many but it was cheap. I did have to solder extra wire on each end to make fit better but exactly you need of your looking for this particular mod.

Aless***** Varty

June 11, 2020

Perfectly satisfied with item. Top supplier on my list.

Hen***** Boyd

May 31, 2020

Packing good, very happy with goods, Very fast delivery, good service. Thanks


May 30, 2020

I have used 2 of the 10 units so far and they work fine.

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