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AT49BV322D-70TU

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AT49BV322D-70TU

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Part Number AT49BV322D-70TU
Manufacturer Microchip Technology
Description IC FLASH 32MBIT 70NS 48TSOP
Datasheet AT49BV322D-70TU Datasheet
Package 48-TFSOP (0.724", 18.40mm Width)
In Stock 9,836 piece(s)
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Estimated Delivery Time Sep 27 - Oct 2 (Choose Expedited Shipping)
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AT49BV322D-70TU Specifications

ManufacturerMicrochip Technology
CategoryIntegrated Circuits (ICs) - Memory
Datasheet AT49BV322D-70TUDatasheet
Package48-TFSOP (0.724", 18.40mm Width)
Series-
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH
Memory Size32Mb (2M x 16)
Memory InterfaceParallel
Clock Frequency-
Write Cycle Time - Word, Page120µs
Access Time70ns
Voltage - Supply2.65 V ~ 3.6 V
Operating Temperature-40°C ~ 85°C (TC)
Mounting TypeSurface Mount
Package / Case48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package48-TSOP

AT49BV322D-70TU Datasheet

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32-megabit (2M x 16/4M x 8) 3-volt Only Flash Memory AT49BV322D AT49BV322DT 3582B–FLASH–11/05Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture – Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout • Fast Word Program Time – 10 µs • Fast Sector Erase Time – 100 ms • Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/Word • Low-power Operation – 10 mA Active – 15 µA Standby • Data Polling, Toggle Bit, Ready/Busy for End of Program Detection • VPP Pin for Write Protection and Accelerated Program Operation • RESET Input for Device Initialization • Sector Lockdown Support • TSOP and CBGA Package Options • Top or Bottom Boot Block Configuration Available • 128-bit Protection Register • Minimum 100,000 Erase Cycles • Common Flash Interface (CFI) 1. Description The AT49BV322D(T) is a 2.7-volt 32-megabit Flash memory organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sec- tors for erase operations. The device is offered in a 48-lead TSOP and a 48-ball CBGA package. The device has CE and OE control signals to avoid any bus conten- tion. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming. The device powers on in the read mode. Command sequences are used to place the device in other operation modes such as program and erase. The device has the capability to protect the data in any sector (see “Sector Lockdown” on page 7). To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend feature. This feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors within the memory. The end of a program or an erase cycle is detected by the READY/BUSY pin, Data Polling or by the toggle bit.

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The VPP pin provides data protection. When the VPP input is below 0.4V, the program and erase functions are inhibited. When VPP is at 1.65V or above, normal program and erase operations can be performed. With VPP at 10.0V, the program (Dual-word Program command) operation is accelerated. A six-byte command (Enter Single Pulse Program Mode) sequence to remove the requirement of entering the three-byte program sequence is offered to further improve programming time. After entering the six-byte code, only single pulses on the write control lines are required for writ- ing into the device. This mode (Single Pulse Byte/Word Program) is exited by powering down the device, or by pulsing the RESET pin low for a minimum of 500 ns and then bringing it back to VCC. Erase, Erase Suspend/Resume and Program Suspend/Resume commands will not work while in this mode; if entered they will result in data being programmed into the device. It is not recommended that the six-byte code reside in the software of the final product but only exist in external programming code. The BYTE pin controls whether the device data I/O pins operate in the byte or word configura- tion. If the BYTE pin is set at logic “1”, the device is in word configuration, I/O0 - I/O15 are active and controlled by CE and OE. If the BYTE pin is set at logic “0”, the device is in byte configuration, and only data I/O pins I/O0 - I/O7 are active and controlled by CE and OE. The data I/O pins I/O8 - I/O14 are tri-stated, and the I/O15 pin is used as an input for the LSB (A-1) address function.2 3582B–FLASH–11/05 AT49BV322D(T)

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AT49BV322D(T)2. Pin Configurations 2.1 TSOP Top View (Type 1) 2.2 CBGA Top View (Ball Down) Pin Name Function A0 - A20 Addresses CE Chip Enable OE Output Enable WE Write Enable RESET Reset RDY/BUSY READY/BUSY Output VPP Write Protection I/O0 - I/O14 Data Inputs/Outputs I/O15 (A-1) I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode) BYTE Selects Byte or Word Mode NC No Connect 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE RESET NC VPP RDY/BUSY A18 A17 A7 A6 A5 A4 A3 A2 A1 A16 BYTE GND I/O15/A-1 I/O7 I/O14 I/O6 I/O13 I/O5 I/O12 I/O4 VCC I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 I/O8 I/O0 OE GND CE A0 A B C D E F G H 1 2 3 4 5 6 RDY/BUSY VPP A18 A20 I/O2 I/O10 I/O11 I/O3 A3 A4 A2 A1 A0 CE OE VSS A7 A17 A6 A5 I/O0 I/O8 I/O9 I/O1 WE RST NC A19 I/O5 I/O12 VCC I/O4 A9 A8 A10 A11 I/O7 I/O14 I/O13 I/O6 A13 A12 A14 A15 A16 BYTE I/015/A-1 VSS3 3582B–FLASH–11/05

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3. Block Diagram 4. Device Operation 4.1 Command Sequences When the device is first powered on, it will be reset to the read or standby mode, depending upon the state of the control line inputs. In order to perform other device functions, a series of command sequences are entered into the device. The command sequences are shown in the “Command Definition Table” on page 13 (I/O8 - I/O15 are don’t care inputs for the command codes). The command sequences are written by applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE. Standard microprocessor write timings are used. The address locations used in the command sequences are not affected by entering the command sequences. 4.2 Read The AT49BV322D(T) is accessed like an EPROM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins are asserted on the out- IDENTIFIER REGISTER STATUS REGISTER DATA COMPARATOR O U T P U T M U L T IP L E X E R OUTPUT BUFFER INPUT BUFFER COMMAND REGISTER D A T A R E G IS T E R Y-GATING WRITE STATE MACHINE PROGRAM/ERASE VOLTAGE SWITCH CE WE OE RESET BYTE RDY/BUSY VPP VCC GND Y-DECODER X-DECODER INPUT BUFFER ADDRESS LATCH I/O0 - I/O15/A-1 A0 - A20 MAIN MEMORY4 3582B–FLASH–11/05 AT49BV322D(T)

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AT49BV322D(T)puts. The outputs are put in the high impedance state whenever CE or OE is high. This dual-line control gives designers flexibility in preventing bus contention. 4.3 Reset A RESET input pin is provided to ease some system applications. When RESET is at a logic high level, the device is in its standard operating mode. A low level on the RESET input halts the present device operation and puts the outputs of the device in a high impedance state. When a high level is reasserted on the RESET pin, the device returns to the read or standby mode, depending upon the state of the control inputs. 4.4 Erase Before a byte/word can be reprogrammed, it must be erased. The erased state of memory bits is a logical “1”. The entire device can be erased by using the Chip Erase command or individual sectors can be erased by using the Sector Erase command. 4.4.1 Chip Erase The entire device can be erased at one time by using the six-byte chip erase software code. After the chip erase has been initiated, the device will internally time the erase operation so that no external clocks are required. The maximum time to erase the chip is tEC. If the sector lockdown has been enabled, the chip erase will not erase the data in the sector that has been locked out; it will erase only the unprotected sectors. After the chip erase, the device will return to the read or standby mode. 4.4.2 Sector Erase As an alternative to a full chip erase, the device is organized into 71 sectors (SA0 - SA70) that can be individually erased. The Sector Erase command is a six-bus cycle operation. The sector address is latched on the falling WE edge of the sixth cycle while the 30H data input command is latched on the rising edge of WE. The sector erase starts after the rising edge of WE of the sixth cycle. The erase operation is internally controlled; it will automatically time to completion. The maximum time to erase a sector is tSEC. When the sector programming lockdown feature is not enabled, the sector will erase (from the same Sector Erase command). An attempt to erase a sector that has been protected will result in the operation terminating immediately. 4.5 Byte/Word Programming Once a memory block is erased, it is programmed (to a logical “0”) on a byte-by-byte or on a word-by-word basis. Programming is accomplished via the internal device command register and is a four-bus cycle operation. The device will automatically generate the required internal program pulses. Any commands written to the chip during the embedded programming cycle will be ignored. If a hardware reset happens during programming, the data at the location being programmed will be corrupted. Please note that a data “0” cannot be programmed back to a “1”; only erase opera- tions can convert “0”s to “1”s. Programming is completed after the specified tBP cycle time. The Data Polling feature or the Toggle Bit feature may be used to indicate the end of a program cycle. If the erase/program status bit is a “1”, the device was not able to verify that the erase or program operation was performed successfully.5 3582B–FLASH–11/05

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4.6 VPP Pin The circuitry of the AT49BV322D(T) is designed so that the device cannot be programmed or erased if the VPP voltage is less that 0.4V. When VPP is at 1.65V or above, normal program and erase operations can be performed. The VPP pin cannot be left floating. 4.7 Program/Erase Status The device provides several bits to determine the status of a program or erase operation: I/O2, I/O3, I/O5, I/O6 and I/O7. The “Status Bit Table” on page 12 and the following four sections describe the function of these bits. To provide greater flexibility for system designers, the AT49BV322D(T) contains a programmable configuration register. The configuration register allows the user to specify the status bit operation. The configuration register can be set to one of two different values, “00” or “01”. If the configuration register is set to “00”, the part will automati- cally return to the read mode after a successful program or erase operation. If the configuration register is set to a “01”, a Product ID Exit command must be given after a successful program or erase operation before the part will return to the read mode. It is important to note that whether the configuration register is set to a “00” or to a “01”, any unsuccessful program or erase opera- tion requires using the Product ID Exit command to return the device to read mode. The default value (after power-up) for the configuration register is “00”. Using the four-bus cycle Set Config- uration Register command as shown in the “Command Definition Table” on page 13, the value of the configuration register can be changed. Voltages applied to the RESET pin will not alter the value of the configuration register. The value of the configuration register will affect the operation of the I/O7 status bit as described below. 4.7.1 Data Polling The AT49BV322D(T) features Data Polling to indicate the end of a program cycle. If the status configuration register is set to a “00”, during a program cycle an attempted read of the last byte/word loaded will result in the complement of the loaded data on I/O7. Once the program cycle has been completed, true data is valid on all outputs and the next cycle may begin. During a chip or sector erase operation, an attempt to read the device will give a “0” on I/O7. Once the program or erase cycle has completed, true data will be read from the device. Data Polling may begin at any time during the program cycle. Please see “Status Bit Table” on page 12 for more details. If the status bit configuration register is set to a “01”, the I/O7 status bit will be low while the device is actively programming or erasing data. I/O7 will go high when the device has completed a program or erase operation. Once I/O7 has gone high, status information on the other pins can be checked. The Data Polling status bit must be used in conjunction with the erase/program and VPP status bit as shown in the algorithm in Figures 4-1 and 4-2 on page 10. 4.7.2 Toggle Bit In addition to Data Polling the AT49BV322D(T) provides another method for determining the end of a program or erase cycle. During a program or erase operation, successive attempts to read data from the memory will result in I/O6 toggling between one and zero. Once the program cycle has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may begin at any time during a program cycle. Please see “Status Bit Table” on page 12 for more details. The toggle bit status bit should be used in conjunction with the erase/program and VPP status bit as shown in the algorithm in Figures 4-3 and 4-3 on page 11.6 3582B–FLASH–11/05 AT49BV322D(T)

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AT49BV322D(T)4.7.3 Erase/Program Status Bit The device offers a status bit on I/O5, which indicates whether the program or erase operation has exceeded a specified internal pulse count limit. If the status bit is a “1”, the device is unable to verify that an erase or a byte/word program operation has been successfully performed. If a program (Sector Erase) command is issued to a protected sector, the protected sector will not be programmed (erased). The device will go to a status read mode and the I/O5 status bit will be set high, indicating the program (erase) operation did not complete as requested. Once the erase/program status bit has been set to a “1”, the system must write the Product ID Exit com- mand to return to the read mode. The erase/program status bit is a “0” while the erase or program operation is still in progress. Please see “Status Bit Table” on page 12 for more details. 4.7.4 VPP Status Bit The AT49BV322D(T) provides a status bit on I/O3, which provides information regarding the voltage level of the VPP pin. During a program or erase operation, if the voltage on the VPP pin is not high enough to perform the desired operation successfully, the I/O3 status bit will be a “1”. Once the VPP status bit has been set to a “1”, the system must write the Product ID Exit com- mand to return to the read mode. On the other hand, if the voltage level is high enough to perform a program or erase operation successfully, the VPP status bit will output a “0”. Please see “Status Bit Table” on page 12 for more details. 4.8 Sector Lockdown Each sector has a programming lockdown feature. This feature prevents programming of data in the designated sectors once the feature has been enabled. These sectors can contain secure code that is used to bring up the system. Enabling the lockdown feature will allow the boot code to stay in the device while data in the rest of the device is updated. This feature does not have to be activated; any sector’s usage as a write-protected region is optional to the user. At power-up or reset, all sectors are unlocked. To activate the lockdown for a specific sector, the six-bus cycle Sector Lockdown command must be issued. Once a sector has been locked down, the contents of the sector is read-only and cannot be erased or programmed. 4.8.1 Sector Lockdown Detection A software method is available to determine if programming of a sector is locked down. When the device is in the software product identification mode (see “Software Product Identification Entry/Exit” sections on page 26), a read from address location 00002H within a sector will show if programming the sector is locked down. If the data on I/O0 is low, the sector can be pro- grammed; if the data on I/O0 is high, the program lockdown feature has been enabled and the sector cannot be programmed. The software product identification exit code should be used to return to standard operation.7 3582B–FLASH–11/05

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4.8.2 Sector Lockdown Override The only way to unlock a sector that is locked down is through reset or power-up cycles. After power-up or reset, the content of a sector that is locked down can be erased and reprogrammed. 4.9 Erase Suspend/Erase Resume The Erase Suspend command allows the system to interrupt a sector or chip erase operation and then program or read data from a different sector within the memory. After the Erase Sus- pend command is given, the device requires a maximum time of 15 µs to suspend the erase operation. After the erase operation has been suspended, the system can then read data or pro- gram data to any other sector within the device. An address is not required during the Erase Suspend command. During a sector erase suspend, another sector cannot be erased. To resume the sector erase operation, the system must write the Erase Resume command. The Erase Resume command is a one-bus cycle command. The device also supports an erase sus- pend during a complete chip erase. While the chip erase is suspended, the user can read from any sector within the memory that is protected. The command sequence for a chip erase sus- pend and a sector erase suspend are the same. 4.10 Program Suspend/Program Resume The Program Suspend command allows the system to interrupt a programming operation and then read data from a different byte/word within the memory. After the Program Suspend com- mand is given, the device requires a maximum of 20 µs to suspend the programming operation. After the programming operation has been suspended, the system can then read data from any other byte/word that is not contained in the sector in which the programming operation was sus- pended. An address is not required during the program suspend operation. To resume the programming operation, the system must write the Program Resume command. The program suspend and resume are one-bus cycle commands. The command sequence for the erase sus- pend and program suspend are the same, and the command sequence for the erase resume and program resume are the same. 4.11 Product Identification The product identification mode identifies the device and manufacturer as Atmel®. It is accessed using a software operation. For details, see “Operating Modes” on page 19 or “Software Product Identification Entry/Exit” sections on page 26. 4.12 128-bit Protection Register The AT49BV322D(T) contains a 128-bit register that can be used for security purposes in sys- tem design. The protection register is divided into two 64-bit blocks. The two blocks are designated as block A and block B. The data in block A is non-changeable and is programmed at the factory with a unique number. The data in block B is programmed by the user and can be locked out such that data in the block cannot be reprogrammed. To program block B in the pro- tection register, the four-bus cycle Program Protection Register command must be used as shown in the “Command Definition Table” on page 13. To lock out block B, the four-bus cycle Lock Protection Register command must be used as shown in the “Command Definition Table” . Data bit D1 must be zero during the fourth bus cycle. All other data bits during the fourth bus cycle are don’t cares. To determine whether block B is locked out, the Product ID Entry com- mand is given followed by a read operation from address 80H. If data bit D1 is zero, block B is locked. If data bit D1 is one, block B can be reprogrammed. Please see the “Protection Register8 3582B–FLASH–11/05 AT49BV322D(T)

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AT49BV322D(T)Addressing Table(1)(2)(3)” on page 14 for the address locations in the protection register. To read the protection register, the Product ID Entry command is given followed by a normal read opera- tion from an address within the protection register. After determining whether block B is protected or not, or reading the protection register, the Product ID Exit command must be given prior to performing any other operation. 4.13 RDY/BUSY An open-drain READY/BUSY output pin provides another method of detecting the end of a pro- gram or erase operation. RDY/BUSY is actively pulled low during the internal program and erase cycles and is released at the completion of the cycle. The open-drain connection allows for OR- tying of several devices to the same RDY/BUSY line. Please see “Status Bit Table” on page 12 for more details. 4.14 Common Flash Interface (CFI) CFI is a published, standardized data structure that may be read from a flash device. CFI allows system software to query the installed device to determine the configurations, various electrical and timing parameters, and functions supported by the device. CFI is used to allow the system to learn how to interface to the flash device most optimally. The two primary benefits of using CFI are ease of upgrading and second source availability. The command to enter the CFI Query mode is a one-bus cycle command which requires writing data 98h to address 55h. The CFI Query command can be written when the device is ready to read data or can also be written when the part is in the product ID mode. Once in the CFI Query mode, the system can read CFI data at the addresses given in “Common Flash Interface Definition Table” on page 27. To exit the CFI Query mode, the product ID exit command must be given. 4.15 Hardware Data Protection The Hardware Data Protection feature protects against inadvertent programs to the AT49BV322D(T) in the following ways: (a) VCC sense: if VCC is below 1.8V (typical), the program function is inhibited. (b) VCC power-on delay: once VCC has reached the VCC sense level, the device will automatically time out 10 ms (typical) before programming. (c) Program inhibit: hold- ing any one of OE low, CE high or WE high inhibits program cycles. (d) Program inhibit: VPP is less than VILPP. 4.16 Input Levels While operating with a 2.65V to 3.6V power supply, the address inputs and control inputs (OE, CE and WE) may be driven from 0 to 5.5V without adversely affecting the operation of the device. The I/O lines can only be driven from 0 to VCC + 0.6V.9 3582B–FLASH–11/05

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