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BTA12-700BRG

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BTA12-700BRG

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Part Number BTA12-700BRG
Manufacturer STMicroelectronics
Description TRIAC 700V 12A TO220AB
Datasheet BTA12-700BRG Datasheet
Package TO-220-3
In Stock 344 piece(s)
Unit Price $ 1.8300 *
Lead Time Can Ship Immediately
Estimated Delivery Time Aug 6 - Aug 11 (Choose Expedited Shipping)
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Part Number # BTA12-700BRG (Thyristors - TRIACs) is manufactured by STMicroelectronics and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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BTA12-700BRG Specifications

ManufacturerSTMicroelectronics
CategoryDiscrete Semiconductor Products - Thyristors - TRIACs
Datasheet BTA12-700BRGDatasheet
PackageTO-220-3
Series-
Triac TypeStandard
Voltage - Off State700V
Current - On State (It (RMS)) (Max)12A
Voltage - Gate Trigger (Vgt) (Max)1.3V
Current - Non Rep. Surge 50, 60Hz (Itsm)120A, 126A
Current - Gate Trigger (Igt) (Max)50mA
Current - Hold (Ih) (Max)50mA
ConfigurationSingle
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

BTA12-700BRG Datasheet

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BTA12 B/C BTB12 B/C March 1995 STANDARD TRIACS Symbol Parameter Value Unit IT(RMS) RMS on-state current (360° conduction angle) BTA Tc = 90 ° C 12 A BTB Tc = 95 ° C ITSM Non repetitive surge peak on-state current ( Tj initial = 25°C ) tp = 8.3 ms 125 A tp = 10 ms 120 I2t I2t value tp = 10 ms 72 A2s dI/dt Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Repetitive F = 50 Hz 10 A/µs Non Repetitive 50 Tstg Tj Storage and operating junction temperature range - 40 to + 150 - 40 to + 125 °C °C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 °C .HIGH SURGE CURRENT CAPABILITY.COMMUTATION : (dV/dt)c > 5 V/µs. BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION Symbol Parameter BTA / BTB12-... B/C Unit 400 600 700 800 VDRM VRRM Repetitive peak off-state voltage Tj = 125 ° C 400 600 700 800 V ABSOLUTE RATINGS (limiting values) FEATURES The BTA/BTB12 B/C triac family are high perform- ance glass passivated PNPN devices. These parts are suitables for general purpose ap- plications where high surge current capability is re- quired. Application such as phase control and static switching on inductive or resistive load. TO220AB (Plastic) A1 A2 G 1/5

Page 3

GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth (j-a) Junction to ambient 60 ° C/W Rth (j-c) DC Junction to case for DC BTA 3.3 ° C/W BTB 2.7 Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) BTA 2.5 ° C/W BTB 2.0 Symbol Test Conditions Quadrant Suffix Unit B C IGT VD=12V (DC) RL=33Ω Tj=25° C I-II-III MAX 50 25 mA IV MAX 100 50 VGT VD=12V (DC) RL=33Ω Tj=25° C I-II-III-IV MAX 1.5 V VGD VD=VDRM RL=3.3kΩ Tj=110° C I-II-III-IV MIN 0.2 V tgt VD=VDRM IG = 500mA dIG/dt = 3A/µs Tj=25° C I-II-III-IV TYP 2 µs IL IG=1.2 IGT Tj=25° C I-III-IV TYP 40 20 mA II 70 35 IH * IT= 500mA gate open Tj=25° C MAX 50 25 mA VTM * ITM= 17A tp= 380µs Tj=25° C MAX 1.5 V IDRM IRRM VDRM Rated VRRM Rated Tj=25° C MAX 0.01 mA Tj=110° C MAX 0.5 dV/dt * Linear slope up to VD=67%VDRM gate open Tj=110° C MIN 250 100 V/µs (dV/dt)c * (dI/dt)c = 5.3A/ms Tj=110° C MIN 10 5 V/µs * For either polarity of electrode A2 voltage with reference to electrode A1. PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS THERMAL RESISTANCES BTA12 B/C / BTB12 B/C 2/5

Page 4

ORDERING INFORMATION Package IT(RMS) VDRM / VRRM Sensitivity Specification A V B C BTA (Insulated) 12 400 X X 600 X X 700 X X 800 X X BTB (Uninsulated) 400 X X 600 X X 700 X X 800 X X 0 1 2 3 4 5 6 7 8 9 10 11 12 0 2 4 6 8 10 12 14 16 180 O = 180 o = 120 o = 90 o = 60 o = 30 o T(RMS) I (A) P(W) Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) 0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 14 16 -90 -85 -95 -100 -105 -110 -115 -120 -125 P (W) Tamb ( C) o Tcase ( C)o Rth = 0 C/W 2 C/W 4 C/W 6 C/W o o o o Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 2 4 6 8 10 12 14 = 180 o Tcase( C) o BTA BTB I (A) T(RMS) Fig.4 : RMS on-state current versus case temperature. 0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 14 16 -95 -100 -105 -110 -115 -120 -125 P (W) Tamb ( C) o Tcase ( C)o Rth = 0 C/W 2 C/W 4 C/W 6 C/W o o o o Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). BTA12 B/C / BTB12 B/C 3/5

Page 5

Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature. Fig.7 : Non Repetitive surge peak on-state current versus number of cycles. Fig.8 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. Fig.9 : On-state characteristics (maximum values). 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.1 1 Zth/Rth Zth(j-c) Zth(j-a) tp(s) Fig.5 : Relative variation of thermal impedance versus pulse duration. BTA12 B/C / BTB12 B/C 4/5

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July 17, 2020

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May 30, 2020

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