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DG9414DQ-T1-E3

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DG9414DQ-T1-E3

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Part Number DG9414DQ-T1-E3
Manufacturer Vishay Siliconix
Description IC MULTIPLEXER DUAL 4X1 10MSOP
Datasheet DG9414DQ-T1-E3 Datasheet
Package 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
In Stock 413 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 21 - Jan 26 (Choose Expedited Shipping)
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Part Number # DG9414DQ-T1-E3 (Interface - Analog Switches, Multiplexers, Demultiplexers) is manufactured by Vishay Siliconix and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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DG9414DQ-T1-E3 Specifications

ManufacturerVishay Siliconix
CategoryIntegrated Circuits (ICs) - Interface - Analog Switches, Multiplexers, Demultiplexers
Datasheet DG9414DQ-T1-E3Datasheet
Package10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Series-
Switch CircuitSP4T
Multiplexer/Demultiplexer Circuit4:1
Number of Circuits1
On-State Resistance (Max)17 Ohm
Channel-to-Channel Matching (ΔRon)1 Ohm
Voltage - Supply, Single (V+)2.7 V ~ 12 V
Voltage - Supply, Dual (V±)-
Switch Time (Ton, Toff) (Max)55ns, 40ns
-3db Bandwidth-
Charge Injection13pC
Channel Capacitance (CS(off), CD(off))10pF, 24pF
Current - Leakage (IS(off)) (Max)1nA
Crosstalk-64dB @ 1MHz
Operating Temperature-40°C ~ 85°C (TA)
Package / Case10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Supplier Device Package10-MSOP

DG9414DQ-T1-E3 Datasheet

Page 1

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Vishay Siliconix DG9414, DG9415 Document Number: 71766 S11-0984-Rev. G, 23-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Single 4 x 1 and Dual 2 x 1 Multiplexers FEATURES • Low voltage operation (+ 2.7 V to + 12 V) • Low on-resistance - RDS(on): 14  • Low power consumption • TTL compatible • ESD protection > 2000 V (method 3015.7) • Available in TSSOP-10 (aka MSOP-10) • Compliant to RoHS Directive 2002/95/EC BENEFITS • High accuracy • Simple logic interface • Reduce board space APPLICATIONS • Battery operated systems • Portable test equipment • Sample and hold circuits • Cellular phones • Communication systems • Networking equipment DESCRIPTION The DG9414, a single 4 to 1 multiplexer, and the DG9415, a dual 2 x 1 multiplexer, are monolithic CMOS analog devices designed for high performance low voltage operation. Combining low power, high speed, low on-resistance and small physical size, the DG9414 and DG9415 are ideal for portable and battery powered applications requiring high performance and efficient use of board space. Both the DG9414 and DG9415 are built on Vishay Siliconix’s low voltage BCD-15 process. Minimum ESD protection, per Method 3015.7, is 2000 V. An epitaxial layer prevents latchup. Break-before-make is guaranteed for DG9415. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION X = Do not care X = Do not care EN A1 A0 On Switch 1 X X None 0 0 0 NO0 0 0 1 NO1 0 1 0 NO2 0 1 1 NO3 NO2 V+ NO3 DG9414DQ COM NO1 NO0 EN A0 1 2 3 4 10 9 8 7 GND A15 6 Logic EN A0 On Switch 1 X None 0 0 NC1 NC2 0 1 NO1 NO2 NO1 V+ COM1 DG9415DQ COM2 NC1 NO2 EN NC2 1 2 3 4 10 9 8 7 GND A05 6Logic ORDERING INFORMATION Temp Range Package Part Number - 40 °C to 85 °C MSOP-10 DG9414DQ-T1-E3 DG9415DQ-T1-E3

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www.vishay.com 2 Document Number: 71766 S11-0984-Rev. G, 23-May-11 Vishay Siliconix DG9414, DG9415 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads soldered or welded to PC board. ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit Reference V+ to GND - 0.3 to + 13 V IN, COM, NC, NOa - 0.3 to (V+ + 0.3) Continuous Current (Any terminal) ± 20 mA Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 40 ESD (Method 3015.7) > 2000 V Storage Temperature (D Suffix) - 65 to 150 °C SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %, VIN = 0.4 V or 2.4 V e Temp.a Limits - 40 °C to 85 °C Unit Min.c Typ.b Max.c Analog Switch Analog Signal Ranged VANALOG Full 0 V+ V On-Resistance RON V+ = 2.7 V, VCOM = 1 V/1.5 V/2 V INO or INC = 5 mA Room Full 63 97 101 RON Match d RON Room 3 11 RON Flatness d,f RON Flatness Room 14 33 NO or NC Off Leakage Currentg INO/NC(off) V+ = 3.3 , VNO or VNC = 0.3 V/3 V VCOM = 3 V/0.3 V Room Full - 1 - 10 1 10 nACOM Off Leakage Currentg ICOM(off) Room Full - 1 - 10 1 10 Channel-On Leakage Currentg ICOM(on) V+ = 3.3 V VCOM = VNO or VNC = 0.3 V/3 V Room Full - 1 - 10 1 10 Digital Control Input Currentg IINL or IINH VIN = 0 or V+ Full - 1 1 µA Input High Voltaged VINH Full 1.6 V Input Low Voltaged VINL Full 0.4 Dynamic Characteristics Turn-On Time tON VNO or VNC = 1.5 V Room Full 102 125 142 ns Turn-Off Time tOFF Room Full 45 68 75 Break-Before-Make Time tD Room 7 78 Transition Time ttrans VNO = 1.5 V/0 V, VNC = 0 V/1.5 V Room Full 81 128 144 Charge Injectiond QINJ CL = 1 nF, Vgen = 0 V, Rgen = 0  Room 3 pC Off-Isolation OIRR RL = 50 , CL = 5 pF, f = 1 MHz Room - 58 dBChannel-to-Channel Crosstalk (DG9415) XTALK RL = 50 , f = 1 MHz Room - 64 NO, NC Off Capacitance CNO(off), CNC(off) f = 1 MHz DG9414 Room 11 pF DG9415 Room 10 COM Off Capacitance CCOM(off) DG9414 Room 26 DG9415 Room 13 COM On Capacitance CCOM(on) DG9414 Room 43 DG9415 Room 25 Power Supply Power Supply Range V+ 2.7 3.3 V Power Supply Currenth I+ V+ = 3.3 V, VIN = 0 V or 3.3 V Full 1 µA

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Document Number: 71766 S11-0984-Rev. G, 23-May-11 www.vishay.com 3 Vishay Siliconix DG9414, DG9415 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Difference of min and max values. g. Guaranteed by 12 V leakage testing, not production tested. h. Guaranteed by worst case test conditions and not subject to test. SPECIFICATIONS (V+ = 5 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 5 V, ± 10 %, VIN = 0.8 V or 2.4 V e Temp.a Limits - 40 °C to 85 °C Unit Min.c Typ.b Max.c Analog Switch Analog Signal Ranged VANALOG Full 0 V+ V On-Resistance RON V+ = 4.5 V, VCOM = 1.5 V/2.5 V/3.5 V INO or INC = 10 mA Room Full 33 56 60 RON Match RON Room 2 10 RON Flatness f RON Flatness Room 10 20 NO or NC Off Leakage Currentg INO/NC(off) V+ = 5.5 V, VNO or VNC = 1 V/4.5 V VCOM = 4.5 V/1 V Room Full - 1 - 10 1 10 nACOM Off Leakage Currentg ICOM(off) Room Full - 1 - 10 1 10 Channel-On Leakage Currentg ICOM(on) V+ = 5.5 V VCOM = VNO or VNC = 1 V/4.5 V Room Full - 1 - 10 1 10 Digital Control Input Currenth IINL or IINH VIN = 0 or V+ Full - 1 1 µA Input High Voltaged VINH Full 1.8 V Input Low Voltaged VINL Full 0.6 Dynamic Characteristics Turn-On Timeh tON VNO or VNC = 3 V Room Full 56 77 86 ns Turn-Off Timeh tOFF Room Full 25 46 50 Break-Before-Make Timeth tD Room 7 34 Transition Time ttrans VNO = 3 V/ 0 V, VNC = 0 V/3 V Room Full 47 77 84 Off-Isolation OIRR RL = 50 , CL = 5 pF, f = 1 MHz Room - 58 dBChannel-to-Channel Crosstalk (DG9415) XTALK RL = 50 , f = 1 MHz Room - 64 Charge Injectiond QINJ CL = 1 nF, Vgen = 0 V, Rgen = 0  Room 6 pC NO, NC Off Capacitance CNO(off), CNC(off) f = 1 MHz DG9414 Room 11 pF DG9415 Room 10 COM Off Capacitance CCOM(off) DG9414 Room 25 DG9415 Room 13 COM On Capacitance CCOM(on) DG9414 Room 42 DG9415 Room 24 Power Supply Power Supply Range V+ 4.5 5.5 V Power Supply Currenth I+ V+ = 5.5 V, VIN = 0 V or 5.5 V Full 1 µA

Page 5

www.vishay.com 4 Document Number: 71766 S11-0984-Rev. G, 23-May-11 Vishay Siliconix DG9414, DG9415 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Difference of min and max values. g. Guaranteed by 12 V leakage testing, not production tested. h. Guaranteed by worst case test conditions and not subject to test. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 12 V) Parameter Symbol Test Conditions Unless Specified V+ = 12 V, VIN = 0.8 V or 2.4 V e Temp.a Limits - 40 °C to 85 °C Unit Min.c Typ.b Max.c Analog Switch Analog Signal Ranged VANALOG Full 0 12 V RON Match RON Room 1 9  RON Flatness d,f RON Flatness Room 1 10 On-Resistance RON V+ = 10.8 V, INO, INC = 25 mA VCOM = 2/9 V Room Full 14 17 19 Switch Off Leakage Current INO(off) INC(off) VCOM = 1/11 V VNO, VNC = 11/1 V Room Full - 1 - 10 1 10 nAICOM(off) Room Full - 1 - 10 1 10 Channel On Leakage Current ICOM(on) VNO, VNC = VCOM = 11/1 V Room Full - 1 - 10 1 10 Digital Control Input Current IINL or IINH VIN = 0 or V+ Full - 1 1 µA Input High Voltaged VINH Full 2.4 V Input Low Voltaged VINL Full 0.8 Dynamic Characteristics Turn-On Timeh tON RL = 300 , CL = 35 pF VNO, VNC = 5 V See Figure 2 Room Full 33 55 59 ns Turn-Off Timeh tOFF Room Full 17 40 41 Break-Before-Make Time Delayh tD DG419L Only, VNC, VNO = 5 V RL = 300 , CL = 35 pF Room 2 24 Transition Time ttrans VNO = 5 V/ 0 V, VNC = 0 V/ 5 V Room Full 29 56 59 Charge Injectiond QINJ Vg = 0 V, Rg = 0 , CL = 1 nF Room 13 pC Off Isolationd OIRR RL = 50 , CL = 5 pF f = 1 MHz Room - 58 dB Channel-to-Channel Crosstalkd XTALK Room - 64 NO, NC Off Capacitanced CNO(off), CNC(off) VIN = 0 or V+, f = 1 MHz DG9414 Room 10 pF DG9415 Room 10 COM Off Capacitance CCOM(off) DG9414 Room 24 DG9415 Room 13 COM On Capacitanced CCOM(on) DG9414 Room 40 DG9415 Room 23 Power Supplies Positive Supply Current I+ VIN = 0 V or 12 V Full 1 µA

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Document Number: 71766 S11-0984-Rev. G, 23-May-11 www.vishay.com 5 Vishay Siliconix DG9414, DG9415 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) RON vs. VCOM and Supply Voltage Supply Current vs. Temperature Leakage Current vs. Temperature 0 10 20 30 40 50 60 70 80 0 3 6 9 V+ = 3.0 V IS = 5 mA VCOM - Analog Voltage (V) - O n -R e s is ta n c e (  ) R O N V+ = 5.0 V IS = 10 mA V+ = 12.0 V IS = 25 mA T = 25 °C 12 1 10 100 1000 10000 - 60 - 40 - 20 0 20 40 60 80 100 Temperature (°C) S u p p ly C u rr e n t (n A ) I+ - V+ = 5.0 V V+ = 12.0 V VAX, VEN = 0 V Temperature (°C) L e a k a g e C u rr e n t (p A ) 1 10 100 1000 - 60 - 40 - 20 0 20 40 60 80 100 ICOM(off) V+ = 12 V ICOM(on) INO(off), INC(off) RON vs. Analog Voltage and Temperature Supply Current vs. Input Switching Frequency Leakage vs. Analog Voltage 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 12 A = 85 °C B = 25 °C C = - 40 °C - O n -R e s is ta n c e (  ) R O N VCOM - Analog Voltage (V) A C A B C V+ = 3.0 V IS = 5 mA A B C B V+ = 5.0 V IS = 10 mA V+ = 12.0 V IS = 25 mA Input Switching Frequency (Hz) 10 100 1 K 10 K 100 K 1 M 10 M 1 n 10 n 100 n 1 m 10 m 1 µ 10 µ 100 µ S u p p ly C u rr e n t (n A ) I+ - V+ = 12 V -100 - 60 - 20 20 60 100 0 2 4 6 8 VCOM, VNO, VNC - Analog Voltage (V) ICOM(on) L e a k a g e C u rr e n t (p A ) V+ = 12.0 V INO(off)/INC(off) ICOM(off) 10 12

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www.vishay.com 6 Document Number: 71766 S11-0984-Rev. G, 23-May-11 Vishay Siliconix DG9414, DG9415 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Transistion Time vs. Temperature (DG9414) Switching Time vs. Temperature Insertion Loss, Off-Isolation Crosstalk vs. Frequency (DG9415) 0 20 40 60 80 100 120 - 60 - 40 - 20 0 20 40 60 80 100 tTRANS- V+ = 3 V Temperature (°C) tTRANS+ V+ = 3 V tTRANS- V+ = 5 V tTRANS+ V+ = 5 V tTRANS+ V+ = 12 V tTRANS- V+ = 12 V - S w it c h in g T im e ( n s ) 0 20 40 60 80 100 120 140 - 60 - 40 - 20 0 20 40 60 80 100 tON V+ = 3 V t O N , t O F F Temperature (°C) tON V+ = 5 V tON V+ = 12 V tOFF V+ = 3 V tOFF V+ = 5 V tOFF V+ = 12 V T A L K 100 k 1 M - 30 10 - 70 - 50 100 M 1 G Frequency (Hz) - 90 OIRR Loss 10 M - 10 L o s s , O IR R , X (d B ) V+ = 12 V RL XTALK Transistion Time vs. Temperature (DG9415) Insertion Loss, Off-Isolation Crosstalk vs. Frequency (DG9414) Switching Threshold vs. Supply Voltage 0 20 40 60 80 100 120 - 60 - 40 - 20 0 20 40 60 80 100 tTRANS- V+ = 3 V Temperature (°C) tTRANS+ V+ = 3 V tTRANS- V+ = 5 V tTRANS+ V+ = 5 V tTRANS+ V+ = 12 V tTRANS- V+ = 12 V T A L K 100 k 1 M - 30 10 - 70 - 50 100 M 1 G Frequency (Hz) - 90 OIRR Loss 10 M - 10 L o s s , O IR R , X (d B ) V+ = 12 V RL XTALK 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - S w it c h in g T h re s h o ld ( V ) V+ - Supply Voltage (V) V T 2 4 6 8 10 12 14

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Document Number: 71766 S11-0984-Rev. G, 23-May-11 www.vishay.com 7 Vishay Siliconix DG9414, DG9415 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) SCHEMATIC DIAGRAM (Typical Channel) TEST CIRCUITS Charge Injection vs. Analog Voltage (DG9414) - 50 - 30 - 10 10 30 50 VCOM - Analog Voltage (V) Q - C h a rg e I n je c ti o n ( p C ) V+ = 3 V V+ = 5 V V+ = 12 V 0 2 4 6 8 10 12 Charge Injection vs. Analog Voltage (DG9415) - 50 - 30 - 10 10 30 50 VCOM - Analog Voltage (V) Q - C h a rg e I n je c ti o n ( p C ) V+ = 3 V V+ = 5 V V+ = 12 V 0 2 4 6 8 10 12 Figure 1. Level Shift/ Drive VIN S V+ GND D V- V+ Figure 2. Switching Time Logic Input Switch Output 50 % 0 V tr < 5 ns tf < 5 ns 90 % tOFF tON VOUT Note: Logic input waveform is inverted for switches that have the opposite logic sense control CL (includes fixture and stray capacitance) V+ IN RL RL + rON VOUT = VIN NO or NC COM VOUT GND CL 35 pF RL 300  V+ VIN Switch Input Switch Output VINH VINL 0.9 x VOUT

Page 9

www.vishay.com 8 Document Number: 71766 S11-0984-Rev. G, 23-May-11 Vishay Siliconix DG9414, DG9415 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEST CIRCUITS Figure 3. Break-Before-Make CL (includes fixture and stray capacitance) NC VNO NO VNC 0 V Logic Input Switch Output VO VNC = VNO tr < 5 ns tf < 5 ns 90 % tD tD IN COM V+ GND V+ CL 35 pF VO RL 300  VINH VINL Figure 4. Transition Time CL (includes fixture and stray capacitance) RL RL + rON VO = VS V+ IN CL 35 pF RL 300  VO VS2 VS1 GND +15 V 50 % Logic Input Switch Output VS1 tr < 5 ns tf < 5 ns 10 % tTRANS+ 90 %V01 VS2 V02 tTRANS- NO or NC COM NC or NO VINH VINL Figure 5. Charge Injection CL 1 nF Rg VO V+ COM INVg GND OFFONOFF VO VO IN IN dependent on switch configuration Input polarity determined by sense of switch. V+ VIN = 0 - V+ Q = VO x CL NO or NC

Page 10

Document Number: 71766 S11-0984-Rev. G, 23-May-11 www.vishay.com 9 Vishay Siliconix DG9414, DG9415 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEST CIRCUITS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71766. Figure 6. Crosstalk NO or NC XTALK Isolation = 20 log VOUT VIN C = RF bypass COMVS 0 V or 2.4 V IN 50 Rg = 50  V+ GND C V+ VIN NC or NO VOUT Figure 7. Off Isolation RL 50  COM 0 V, 2.4 V V+ Rg = 50  GND Off Isolation = 20 log VCOM VNO/NC IN NO or NC C C = RF Bypass Figure 8. Source/Drain Capacitances NO or NC IN COM V+ GND 0 V, 2.4 V Meter HP4192A Impedance Analyzer or Equivalent C V+ f = 1 MHz

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December 22, 2020

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December 21, 2020

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December 1, 2020

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November 28, 2020

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November 28, 2020

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November 21, 2020

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