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DMN3031LSS-13

hot DMN3031LSS-13

DMN3031LSS-13

For Reference Only

Part Number DMN3031LSS-13
Manufacturer Diodes Incorporated
Description MOSFET N-CH 30V 9A 8SOP
Datasheet DMN3031LSS-13 Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 49300 piece(s)
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Lead Time Can Ship Immediately
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DMN3031LSS-13

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DMN3031LSS-13 Specifications

ManufacturerDiodes Incorporated
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet DMN3031LSS-13 Datasheet
Package8-SOIC (0.154", 3.90mm Width)
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25��C9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds741pF @ 15V
Vgs (Max)��20V
Power Dissipation (Max)2.5W (Ta)
Rds On (Max) @ Id, Vgs18.5 mOhm @ 9A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package / Case8-SOIC (0.154", 3.90mm Width)

DMN3031LSS-13 Datasheet

Page 1

Page 2

DMN3031LSS Document number: DS31650 Rev. 4 - 3 1 of 6 www.diodes.com December 2012 © Diodes Incorporated DMN3031LSS NOT RECOMMENDED FOR NEW DESIGN USE DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • 18.5mΩ @ VGS = 10V • 31mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SO-8 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals Connections: See Diagram • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.072g (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) Steady State TA = 25°C TA = 70°C ID 9 6.75 A Pulsed Drain Current (Note 3) IDM 40 A Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 1) PD 2.5 W Thermal Resistance, Junction to Ambient RθJA 50 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. Device mounted on 2 oz copper pad layout with RθJA = 50°C/W. 2. No purposefully added lead. 3. Pulse width ≤10μS, Duty Cycle ≤1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. SOP-8L TOP VIEW Internal Schematic TOP VIEW S D D G D D S S

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DMN3031LSS Document number: DS31650 Rev. 4 - 3 2 of 6 www.diodes.com December 2012 © Diodes Incorporated DMN3031LSS NOT RECOMMENDED FOR NEW DESIGN USE DMN3030LSS Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 1 ⎯ 2.1 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) ⎯ 15 26 18.5 31 mΩ VGS = 10V, ID = 9A VGS = 4.5V, ID = 7A Forward Transconductance gfs ⎯ 5.8 ⎯ S VDS = 10V, ID = 9A Diode Forward Voltage (Note 5) VSD 0.5 0.7 1.2 V VGS = 0V, IS = 2.1A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 741 ⎯ pF VDS = 15V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 124 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 95 ⎯ pF Gate Resistance RG 0.30 0.88 1.5 Ω VDS = 0V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS Total Gate Charge Qg ⎯ 7.6 12 nC VDS = 15V, VGS = 4.5V, ID = 9A ⎯ 16.7 25 VDS = 15V, VGS = 10V, ID = 9A Gate-Source Charge Qgs ⎯ 1.9 ⎯ Gate-Drain Charge Qgd ⎯ 5.2 ⎯ Turn-On Delay Time td(on) ⎯ 4.0 ⎯ ns VGS = 10V, VDS = 15V, RL = 15Ω, RG = 6Ω Rise Time tr ⎯ 4.4 ⎯ Turn-Off Delay Time td(off) ⎯ 23.0 ⎯ Fall Time tf ⎯ 9.4 ⎯ Notes: 5. Short duration pulse test used to minimize self-heating effect. Fig. 1 Typical Output Characteristic 0 3 6 9 12 15 18 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 V , DRAIN-SOURCE VOLTAGE (V)DS I , D R A IN C U R R E N T ( A ) D V = 2.5VGS V = 3.0VGS V = 4.5VGS V = 10VGS Fig. 2 Typical Transfer Characteristics 0 2 4 6 8 10 12 14 16 1.5 2 2.5 3 3.5 V , GATE SOURCE VOLTAGE (V)GS I , D R A IN C U R R E N T ( A ) D V = 5VDS

Page 4

DMN3031LSS Document number: DS31650 Rev. 4 - 3 3 of 6 www.diodes.com December 2012 © Diodes Incorporated DMN3031LSS NOT RECOMMENDED FOR NEW DESIGN USE DMN3030LSS Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 0.01 0.02 0.03 0.1 1 10 100 I , DRAIN-SOURCE CURRENT (A)D R , D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S (O N ) Ω V = 4.5VGS V = 10VGS 0.01 0.02 0.03 0.04 0.05 0.06 0 3 6 9 12 15 R , D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S (O N ) Ω Fig. 4 Typical On-Resistance vs. Drain Current and Temperature I , DRAIN-SOURCE CURRENT (A)D T = -55°CA T = 25°CA T = 85°CA T = 125°CA T = 150°CA V = 4.5VGS 0.01 0.015 0.02 0.025 0.03 0 3 6 9 12 15 I , DRAIN-SOURCE CURRENT (A)D R , D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S (O N ) Ω Fig. 5 Typical On-Resistance vs. Drain Current and Temperature T = -55°CA T = 25°CA T = 85°CA T = 125°CA T = 150°CA V = 10VGS Fig. 6 On-Resistance Variation with Temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 -50 0 50 100 150 T , JUNCTION TEMPERATURE (°C)J R , D R A IN -S O U R C E O N -R E S IS TA N C E ( N O R M A L IZ E D ) D S (O N ) V = 10V I = 10A GS D V = 4.5V I = 5A GS D Fig. 7 Gate Threshold Variation vs. Ambient Temperature 1 1.3 1.6 1.9 2.2 2.5 -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A V , G A T E T H R E S H O LD V O LT A G E ( V ) G S (T H ) I = 250µAD Fig. 8 Total Capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 V , DRAIN-SOURCE VOLTAGE (V)DS C , C A P A C IT A N C E ( p F )

Page 5

DMN3031LSS Document number: DS31650 Rev. 4 - 3 4 of 6 www.diodes.com December 2012 © Diodes Incorporated DMN3031LSS NOT RECOMMENDED FOR NEW DESIGN USE DMN3030LSS Fig. 9 Diode Forward Voltage vs. Current 0.0001 0.001 0.01 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 V , SOURCE-DRAIN VOLTAGE (V)SD I , S O U R C E C U R R E N T ( A ) S V = -55°CGS V = 25°CGS V = 85°CGS V = 125°CGS V = 150°CGS Fig. 10 Transient Thermal Response t , PULSE DURATION TIME (s)1 r( t) , T R A N S IE N T T H E R M A L R E S IS TA N C E 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 T - T = P * R (t) Duty Cycle, D = t /t J A JA 1 2 θ R (t) = r(t) * R R = 90°C/W θ θ θ JA JA JA P(pk) t1 t2 D = Single Pulse D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.3 D = 0.5 D = 0.7 D = 0.9 Ordering Information (Note 6) Part Number Case Packaging DMN3031LSS-13 SO-8 2500/Tape & Reel Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Top View Logo Part no. Year : "08" =2008 Xth week: 01~52 1 4 8 5 N3031LS YY WW

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DMN3031LSS Document number: DS31650 Rev. 4 - 3 5 of 6 www.diodes.com December 2012 © Diodes Incorporated DMN3031LSS NOT RECOMMENDED FOR NEW DESIGN USE DMN3030LSS Package Outline Dimensions Suggested Pad Layout SO-8 Dim Min Max A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h - 0.35 L 0.62 0.82 θ 0° 8° All Dimensions in mm Dimensions Value (in mm) X 0.60 Y 1.55 C1 5.4 C2 1.27 Gauge Plane Seating Plane Detail ‘A’ Detail ‘A’ EE1 h L D e b A2 A1 A 45° 7°~9° A3 0 .2 54 X C1 C2 Y

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