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DMP4050SSD-13

hotDMP4050SSD-13

DMP4050SSD-13

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Part Number DMP4050SSD-13
Manufacturer Diodes Incorporated
Description MOSFET 2P-CH 40V 4A 8SO
Datasheet DMP4050SSD-13 Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 100,714 piece(s)
Unit Price $ 0.4004 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jun 3 - Jun 8 (Choose Expedited Shipping)
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Part Number # DMP4050SSD-13 (Transistors - FETs, MOSFETs - Arrays) is manufactured by Diodes Incorporated and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For DMP4050SSD-13 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add DMP4050SSD-13 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of DMP4050SSD-13.

DMP4050SSD-13 Specifications

ManufacturerDiodes Incorporated
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Datasheet DMP4050SSD-13Datasheet
Package8-SOIC (0.154", 3.90mm Width)
Series-
FET Type2 P-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C4A
Rds On (Max) @ Id, Vgs50 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds674pF @ 20V
Power - Max1.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

DMP4050SSD-13 Datasheet

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DMP4050SSD Document Number DS32107 Rev 3 - 2 1 of 8 www.diodes.com April 2013 © Diodes Incorporated A D V A N C E I N F O R M A T IO N A Product Line of Diodes Incorporated DMP4050SSD 40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) Max ID TA = +25°C -40V 50m @ VGS = -10V -5.2A 79m @ VGS = -4.5V -4.1A Description This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Motor Control  Backlighting  DC-DC Converters  Power Management Functions Features and Benefits  Low On-Resistance  Fast Switching Speed  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: SO-8  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1)  Moisture Sensitivity: Level 1 per J-STD-020  Terminals Connections: See diagram below  Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208  Weight: 0.074 grams (approximate) Ordering Information (Note 4) Part Number Qualification Case Packaging DMP4050SSD-13 Standard SO-8 2500 / Tape & Reel DMP4050SSDQ-13 Automotive SO-8 2500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information Equivalent Circuit = Manufacturer’s Marking P4050SD = Product Type Marking Code for DMP4050SSD-13 P4050DQ = Product Type Marking Code for DMP4050SSDQ-13 YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-53) P4050SD YY WW Top View SO-8 Top View D1S1 G1 S2 G2 D1 D2 D2 D2 S2 G2 D1 S1 G1 P4050DQ YY WW e3

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DMP4050SSD Document Number DS32107 Rev 3 - 2 2 of 8 www.diodes.com April 2013 © Diodes Incorporated A D V A N C E I N F O R M A T IO N A Product Line of Diodes Incorporated DMP4050SSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -40 V Gate-Source Voltage (Note 5) VGS 20 V Continuous Drain Current VGS = 10V (Notes 9 & 11) ID -5.2 A TA = +70°C (Notes 7 & 9) -4.2 (Notes 6 & 9) -4.0 Pulsed Drain Current VGS = 10V (Notes 8 & 9) IDM -20.0 A Continuous Source Current (Body Diode) (Notes 7 & 9) IS -3.2 A Pulsed Source Current (Body Diode) (Notes 8 & 9) ISM -20.0 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power dissipation Linear derating factor (Notes 6 & 9) PD 1.25 10.0 W mW/°C (Notes 6 & 10) 1.8 14.3 (Notes 7 & 9) 2.14 17.2 Thermal Resistance, Junction to Ambient (Notes 6 & 9) RθJA 100 °C/W (Notes 6 & 10) 70 (Notes 7 & 9) 58 Thermal Resistance, Junction to Lead (Notes 9 & 11) RJL 53 Operating and storage temperature range TJ, TSTG -55 to +150 °C Notes: 5. AEC-Q101 VGS maximum is 16V. 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 7. Same as note (3), except the device is measured at t  10 sec. 8. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature. 9. For a dual device with one active die. 10. For a device with two active die running at equal power. 11. Thermal resistance from junction to solder-point (at the end of the drain lead).

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DMP4050SSD Document Number DS32107 Rev 3 - 2 3 of 8 www.diodes.com April 2013 © Diodes Incorporated A D V A N C E I N F O R M A T IO N A Product Line of Diodes Incorporated DMP4050SSD Thermal Characteristics 100m 1 10 1m 10m 100m 1 10 Single Pulse T amb =25°C One active die R DS(on) Limited 100µs 1ms 10ms 100ms 1s DC Safe Operating Area -I D D ra in C u rr e n t ( A ) -V DS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Two active die One active die Derating Curve Temperature (°C) M ax P ow er D is si p at io n (W ) 100µ 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 70 80 90 100 110 T amb =25°C One active die Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 T h er m a l R e si st a n ce ( °C /W ) Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k 1 10 100 Single Pulse T amb =25°C One active die Pulse Power Dissipation Pulse Width (s) M a xi m u m P o w e r (W )

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DMP4050SSD Document Number DS32107 Rev 3 - 2 4 of 8 www.diodes.com April 2013 © Diodes Incorporated A D V A N C E I N F O R M A T IO N A Product Line of Diodes Incorporated DMP4050SSD Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -40   V ID = -250µA , VGS = 0V Zero Gate Voltage Drain Current IDSS   -0.5 µA VDS = -40V, VGS = 0V Gate-Source Leakage IGSS   100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1.0  -3.0 V ID = -250µA, VDS = VGS Static Drain-Source On-Resistance (Note 12) RDS(ON)  0.038 0.050 Ω VGS = -10V, ID = -6A 0.055 0.079 VGS = -4.5V, ID = -5A Forward Transconductance (Notes 12 & 13) gfs  14  S VDS = -15V, ID = -6A Diode Forward Voltage (Note 12) VSD  -0.86 -1.2 V IS = -6A, VGS = 0V Reverse recovery time (Note 13) trr  18  ns IS = -2A, di/dt = 100A/µs Reverse recovery charge (Note 13) Qrr  12.7  nC DYNAMIC CHARACTERISTICS (Note 13) Input Capacitance Ciss  674  pF VDS = -20V, VGS = 0V f = 1MHz Output Capacitance Coss  115  pF Reverse Transfer Capacitance Crss  67.7  pF Total Gate Charge (Note 14) Qg  6.9  nC VGS = -4.5V VDS = -20V ID = -6A Total Gate Charge (Note 14) Qg  13.9  nC VGS = -10V Gate-Source Charge (Note 14) Qgs  2  nC Gate-Drain Charge (Note 14) Qgd  3.4  nC Turn-On Delay Time (Note 14) tD(on)  1.9  ns VDD = -20V, VGS = -10V ID = -1A, RG  6.0 Turn-On Rise Time (Note 14) tr  3.1  ns Turn-Off Delay Time (Note 14) tD(off)  31.5  ns Turn-Off Fall Time (Note 14) tf  12.6  ns Notes: 12. Measured under pulsed conditions. Pulse width  300s; duty cycle  2% 13. For design aid only, not subject to production testing. 14. Switching characteristics are independent of operating junction temperatures.

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DMP4050SSD Document Number DS32107 Rev 3 - 2 5 of 8 www.diodes.com April 2013 © Diodes Incorporated A D V A N C E I N F O R M A T IO N A Product Line of Diodes Incorporated DMP4050SSD Typical Characteristics 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 1.5 2.0 2.5 3.0 3.5 0.1 1 10 -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 0.01 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 1E-3 0.01 0.1 1 10 10V 3.5V -V GS 2.5V 4V 3V Output Characteristics T = 25°C -V GS-I D D ra in C ur re n t ( A ) -V DS Drain-Source Voltage (V) 3.5V 3V 2V 10V 2.5V Output Characteristics T = 150°C -I D D ra in C ur re n t ( A ) -V DS Drain-Source Voltage (V) 4V Typical Transfer Characteristics -V DS = 10V T = 25°C T = 150°C -I D D ra in C ur re n t ( A ) -V GS Gate-Source Voltage (V) Normalised Curves v Temperature R DS(on) V GS = -10V I D = -12A V GS(th) V GS = V DS I D = -250uA N o rm a lis e d R D S (o n) a n d V G S (t h ) Tj Junction Temperature (°C) 4.5V 10V 3V 4V 3.5V 2.5V On-Resistance v Drain Current T = 25°C-V GS R D S (o n) D ra in -S o u rc e O n -R es is ta nc e   -I D Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage -V SD Source-Drain Voltage (V) -I S D R e ve rs e D ra in C u rr e n t (A )

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DMP4050SSD Document Number DS32107 Rev 3 - 2 6 of 8 www.diodes.com April 2013 © Diodes Incorporated A D V A N C E I N F O R M A T IO N A Product Line of Diodes Incorporated DMP4050SSD Typical Characteristics – (cont.) 0.1 1 10 0 200 400 600 800 1000 C RSS C OSS C ISS V GS = 0V f = 1MHz C C ap ac ita nc e (p F ) -V DS - Drain - Source Voltage (V) 0 2 4 6 8 10 12 14 0 2 4 6 8 10 V DS = -20V I D = -6A Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) -V G S G at e- S ou rc e V ol ta ge ( V ) Test Circuits Current regulator Charge Gate charge test circuit Switching time test circuit Basic gate charge waveform Switching time waveforms D.U.T 50k 0.2F 12V Same as D.U.T VGS VGS VDS VG QGS QGD QG VGS 90% 10% t(on) t(on) td(on) tr tr td(off) VDS VDD RD RG Pulse width  1S Duty factor 0.1% VDS ID IG

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DMP4050SSD Document Number DS32107 Rev 3 - 2 7 of 8 www.diodes.com April 2013 © Diodes Incorporated A D V A N C E I N F O R M A T IO N A Product Line of Diodes Incorporated DMP4050SSD Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SO-8 Dim Min Max A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h - 0.35 L 0.62 0.82  0 8 All Dimensions in mm Dimensions Value (in mm) X 0.60 Y 1.55 C1 5.4 C2 1.27 Gauge Plane Seating Plane Detail ‘A’ Detail ‘A’ EE1 h L D e b A2 A1 A 45° 7°~9° A3 0 .2 54 X C1 C2 Y

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