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hot FAN73832MX


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Part Number FAN73832MX
Manufacturer ON Semiconductor
Datasheet FAN73832MX Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 4400 piece(s)
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FAN73832MX Specifications

ManufacturerON Semiconductor
CategoryIntegrated Circuits (ICs) - PMIC - Gate Drivers
Datasheet FAN73832MX Datasheet
Package8-SOIC (0.154", 3.90mm Width)
Driven ConfigurationHalf-Bridge
Channel TypeSynchronous
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Voltage - Supply15 V ~ 20 V
Logic Voltage - VIL, VIH1.2V, 2.9V
Current - Peak Output (Source, Sink)350mA, 650mA
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)600V
Rise / Fall Time (Typ)50ns, 30ns
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

FAN73832MX Datasheet

Page 1

Page 2

To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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February 2007 FA N 73832 H alf-B ridge G ate-D rive IC © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN73832 Rev. 1.0.2 FAN73832 Half-Bridge Gate-Drive IC Features Floating Channel for Bootstrap Operation to +600V Typically 350mA/650mA Sourcing/Sinking Current Driving Capability for Both Channels Extended Allowable Negative VS Swing to -9.8V for Signal Propagation at VDD=VBS=15V High-Side Output in Phase of IN Signal Built-in UVLO Functions for Both Channels Built-in Common-Mode dv/dt Noise Canceling Circuit Internal 400ns Minimum Dead-Time at RDT=20KΩ Programmable Turn-on Delay-Time Control (Dead-Time) Applications SMPS Motor Drive Inverter Fluorescent Lamp Ballast HID Ballast Description The FAN73832 is a half-bridge, gate-drive IC with shut- down and programmable dead-time control functions for driving MOSFETs and IGBTs, operating up to +600V. Fairchild’s high-voltage process and common-mode noise canceling technique provide stable operation of high-side driver under high dv/dt noise circumstances. An advanced level-shift circuit allows high-side gate driver operation up to VS=-9.8V (typical) for VBS=15V. The UVLO circuits for both channels prevent malfunction when VDD and VBS are lower than the specified thresh- old voltage. Output drivers typically source/sink 350mA/650mA, respectively, which is suitable for all kinds of half- and full-bridge inverters. Ordering Information Note: 1. These devices passed wave soldering test by JESD22A-111. 8-SOP 8-DIP Part Number Package Pb-Free Operating Temperature Range Packing Method FAN73832M(1) 8-SOP Yes -40°C ~ 125°C Tube FAN73832MX(1) Tape & Reel FAN73832N 8-DIP Tube

Page 4

FA N 73832 H alf-B ridge G ate-D rive IC © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN73832 Rev. 1.0.2 2 Typical Application Diagrams Figure 1. Application Circuit for Half-Bridge Switching Power Supply Figure 2. Application Circuit for Full-Bridge DC Motor Driver VDD VDC PWM IC PWM ShutdownControl 1 3 2 VDD LO VB VS HOGND IN 4 FAN73832 8 5 6 7 RDT DBOOT CBOOT DT/ SD RBOOT FAN73832 Rev.01 HO VDD GND IN FAN73832 DC Motor Controller PHA PHB LO SD DT/ SD M HO GND IN FAN73832 LODT/ SD FAN73832 Rev.01 VDC VCC VDDVB VB VS VS Forward Reverse

Page 5

FA N 73832 H alf-B ridge G ate-D rive IC © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN73832 Rev. 1.0.2 3 Internal Block Diagram Figure 3. Functional Block Diagram of FAN73832 UVLO DRIVERPU LS E G EN ER A TO R 3 1 4 2 8 6 IN VDD GND LO VB HO VS RR S Q DR IVER HS(ON/OFF) LS(ON/OFF) DELAY UVLO SCHMITT TRIGGER INPUT DEAD- TIME NOISE CANCELLER 5 7 DT/SD RDTINT CONTROL FAN73832 Rev:00

Page 6

FA N 73832 H alf-B ridge G ate-D rive IC © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN73832 Rev. 1.0.2 4 Pin Assignments Figure 4. Pin Configuration (Top View) Pin Definitions Pin # Name Description 1 IN Logic Input 2 GND Ground 3 DT/SD Dead-Time Control with External Resistor and Shutdown Function 4 VDD Low-Side Supply Voltage 5 LO Low-Side Driver Output 6 VS High-Side Floating Supply Return 7 HO High-Side Driver Output 8 VB High-Side Floating Supply LO IN VDD VS HO VB GND 1 2 3 4 8 7 6 5 FA N 73832 DT/SD FAN73832 Rev:00

Page 7

FA N 73832 H alf-B ridge G ate-D rive IC © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN73832 Rev. 1.0.2 5 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified. Notes: 2. Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material). 3. Refer to the following standards: JESD51-2: Integral circuits thermal test method environmental conditions - Natural convection JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages 4. Do not exceed PD under any circumstances. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol Parameter Min. Max. Unit VS High-side offset voltage VB-25 VB+0.3 V VB High-side floating supply voltage -0.3 625 V VHO High-side floating output voltage HO VS-0.3 VB+0.3 V VDD Low-side and logic-fixed supply voltage -0.3 25 V VLO Low-side output voltage LO -0.3 VDD+0.3 V VIN Logic input voltage (IN) -0.3 VDD+0.3 V VDT/SD Dead-time and shutdown control voltage -0.3 5.0 V GND Logic ground VDD-25 VDD+0.3 V dVS/dt Allowable offset voltage slew rate 50 V/ns PD (2)(3)(4) Power dissipation 8-SOP 0.625 W 8-DIP 1.25 θJA Thermal resistance, junction-to-ambient 8-SOP 200 °C/W 8-DIP 100 TJ Junction temperature 150 °C TSTG Storage temperature 150 °C Symbol Parameter Condition Min. Max. Unit VB High-side floating supply voltage VS+15 VS+20 V VS High-side floating supply offset voltage 6-VDD 600 V VDD Low-side supply voltage 15 20 V VHO High-side (HO) output voltage VS VB V VLO Low-side (LO) output voltage GND VDD V VIN Logic input voltage (IN) GND VDD V TA Ambient temperature -40 125 °C

Page 8

FA N 73832 H alf-B ridge G ate-D rive IC © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN73832 Rev. 1.0.2 6 Electrical Characteristics VBIAS (VDD, VBS)=15.0V, RDT=20KΩ,TA=25°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND. The VO and IO parameters are referenced to VS and COM and are applicable to the respective outputs HO and LO. Note: 5. This parameter guaranteed by design. Symbol Parameter Condition Min. Typ. Max. Unit SUPPLY CURRENT SECTION IQBS Quiescent VBS supply current VIN=0V or 5V 35 90 µA IQDD Quiescent VDD supply current VIN=0V or 5V, RDT=20KΩ 300 450 ISD (5) Shutdown supply current DT/SD=GND 650 900 IPBS Operating VBS supply current fIN=20kHz, rms value 400 700 IPDD Operating VDD supply current fIN=20kHz, rms value 650 850 ILK Offset supply leakage current VB=VS=600V 10 POWER SUPPLY SECTION VDDUV+ VBSUV+ VDD and VBS supply under-voltage positive going threshold 10.7 11.6 12.5 V VDDUV- VBSUV- VDD and VBS supply under-voltage negative going threshold 10.0 10.8 11.6 V VDDUVH VBSUVH VDD supply under-voltage lockout hysteresis 0.8 V DEAD-TIME CONTROL SECTION RDTINT Internal dead-time setting resistance 20 KΩ VDT Normal voltage at DT RDT=20KΩ 3.0 V GATE DRIVER OUTPUT SECTION VOH High-level output voltage, VBIAS-VO IO=20mA 1.0 V VOL Low-level output voltage, VO 0.6 V IO+ Output high short-circuit pulse current VO=0V, VIN=5V with PW<10µs 250 350 mA IO- Output low short-circuit pulsed current VO=15V, VIN=0V with PW<10µs 500 650 mA VS Allowable negative VS pin voltage for IN signal propagation to HO -9.8 -7.0 V LOGIC INPUT SECTION (INPUT and SHUTDOWN) VIH Logic "1" input voltage 2.9 V VIL Logic "0" input voltage 1.2 V IIN+ Logic "1" input bias current VIN=5V 50 100 µA IIN- Logic "0" input bias current VIN=0V 2.0 µA SD+ Shutdown "1" input voltage 1.2 V SD- Shutdown "0" input voltage 2.9 V RPD Input pull-down resistance 100 KΩ

Page 9

FA N 73832 H alf-B ridge G ate-D rive IC © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN73832 Rev. 1.0.2 7 Dynamic Electrical Characteristics VBIAS (VDD, VBS)=15.0V, VS=GND, CL=1000pF, RDT=20KΩ and TA = 25°C, unless otherwise specified. Note: 5. These parameters guaranteed by design. Symbol Parameter Conditions Min. Typ. Max. Unit tON Turn-on propagation delay VS=0V, RDT=20KΩ 580 730 ns tOFF Turn-off propagation delay VS=0V or 600V (5), RDT=20KΩ 180 230 tR Turn-on rise time CL=1000pF 50 100 tF Turn-off fall time CL=1000pF 30 80 tSD (5) Shutdown propagation delay 100 180 DT1, DT2 Dead-time LO OFF to HO ON & HO OFF to LO ON RDT =20KΩ 300 400 500 ns RDT = 200KΩ 1.20 1.68 2.30 µs DMT Dead-time matching RDT = 20KΩ 0 60 ns RDT =200KΩ 0 150

Page 10

FA N 73832 H alf-B ridge G ate-D rive IC © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN73832 Rev. 1.0.2 8 Typical Characteristics Figure 5. VDD/VBS UVLO (+) vs. Temperature Figure 6. VDD/VBS UVLO (-) vs. Temperature Figure 7. VDD Quiescent Current vs. Temperature Figure 8. VBS Quiescent Current vs. Temperature Figure 9. VDD Operating Current vs. Temperature Figure 10. VBS Operating Current vs. Temperature -40 -20 0 20 40 60 80 100 120 10.8 11.0 11.2 11.4 11.6 11.8 12.0 V D D U V + ,V B S U V + [V ] Temperature [°C] -40 -20 0 20 40 60 80 100 120 10.0 10.2 10.4 10.6 10.8 11.0 11.2 11.4 11.6 V D D U V - , V B S U V - [ V ] Temperature [°C] -40 -20 0 20 40 60 80 100 120 0 100 200 300 400 500 I Q D D [μ A ] Temperature [°C] -40 -20 0 20 40 60 80 100 120 0 20 40 60 80 100 I Q B S [μ A ] Temperature [°C] -40 -20 0 20 40 60 80 100 120 0 200 400 600 800 1000 I P D D [μ A ] Temperature [°C] -40 -20 0 20 40 60 80 100 120 0 200 400 600 800 I P B S [μ A ] Temperature [°C]

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