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FCA47N60F

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FCA47N60F

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Part Number FCA47N60F
Manufacturer Fairchild/ON Semiconductor
Description MOSFET N-CH 600V 47A TO-3PN
Datasheet FCA47N60F Datasheet
Package TO-3P-3, SC-65-3
In Stock 18,164 piece(s)
Unit Price $ 12.9300 *
Lead Time Can Ship Immediately
Estimated Delivery Time Dec 4 - Dec 9 (Choose Expedited Shipping)
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Part Number # FCA47N60F (Transistors - FETs, MOSFETs - Single) is manufactured by Fairchild/ON Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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FCA47N60F Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FCA47N60FDatasheet
PackageTO-3P-3, SC-65-3
SeriesSuperFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds8000pF @ 25V
Vgs (Max)��30V
FET Feature-
Power Dissipation (Max)417W (Tc)
Rds On (Max) @ Id, Vgs73 mOhm @ 23.5A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

FCA47N60F Datasheet

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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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F C A 47N 60F — N -C h an n el S u p erF E T ® F R F E T ® M O S F E T ©2007 Fairchild Semiconductor Corporation FCA47N60F Rev. C2 www.fairchildsemi.com1 Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FCA47N60F Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 47 29.7 A A IDM Drain Current - Pulsed (Note 1) 141 A VGSS Gate-Source voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 1800 mJ IAR Avalanche Current (Note 1) 47 A EAR Repetitive Avalanche Energy (Note 1) 41.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns PD Power Dissipation (TC = 25°C) - Derate Above 25°C 417 3.33 W W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 °C FCA47N60F N-Channel SuperFET® FRFET® MOSFET 600 V, 47 A, 73 mΩ Features • 650 V @ TJ = 150 °C • Typ. RDS(on) = 62 mΩ • Fast Recovery Time (Typ. Trr = 240 ns) • Ultra Low Gate Charge (Typ. Qg = 210 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Solar Inverter • AC-DC Power Supply Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera- tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on- resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch- ing performance, dv/dt rate and higher avalanche energy. Con- sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Super- FET FRFET® MOSFET’s optimized body diode reverse recov- ery performance can remove additional component and improve system reliability. Thermal Characteristics Symbol Parameter FCA47N60F Unit RθJC Thermal Resistance, Junction-to-Case, Max. 0.3 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 41.7 °C/W TO-3PN G D S G S D May 2014

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F C A 47N 60F — N -C h an n el S u p erF E T ® F R F E T ® M O S F E T ©2007 Fairchild Semiconductor Corporation FCA47N60F Rev. C2 www.fairchildsemi.com2 Package Marking and Ordering Information Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 18 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 47 A, di/dt ≤ 1200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCA47N60F FCA47N60F TO-3PN Tube N/A N/A 30 units Symbol Parameter Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA, TJ = 25°C 600 -- -- V VGS = 0 V, ID = 250 μA, TJ = 150°C -- 650 -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.6 -- V/°C BVDS Drain to Source Avalanche Breakdown Voltage VGS = 0 V, ID = 47 A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V, VDS = 480 V, TC = 125°C -- -- -- -- 10 100 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 23.5 A -- 0.062 0.073 Ω gFS Forward Transconductance VDS = 40 V, ID = 23.5 A -- 40 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz -- 5900 8000 pF Coss Output Capacitance -- 3200 4200 pF Crss Reverse Transfer Capacitance -- 250 -- pF Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz -- 160 -- pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V -- 420 -- pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300 V, ID = 47 A, VGS = 10 V, RG = 25 Ω (Note 4) -- 185 430 ns tr Turn-On Rise Time -- 210 450 ns td(off) Turn-Off Delay Time -- 520 1100 ns tf Turn-Off Fall Time -- 75 160 ns Qg Total Gate Charge VDS = 480 V, ID = 47 A, VGS = 10 V (Note 4) -- 210 270 nC Qgs Gate-Source Charge -- 38 -- nC Qgd Gate-Drain Charge -- 110 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 47 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 141 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 47 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 47 A, dIF/dt = 100 A/μs -- 240 -- ns Qrr Reverse Recovery Charge -- 2.04 -- μC

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F C A 47N 60F — N -C h an n el S u p erF E T ® F R F E T ® M O S F E T ©2007 Fairchild Semiconductor Corporation FCA47N60F Rev. C2 www.fairchildsemi.com3 Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperatue Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 2 4 6 8 10 100 101 102 - Note 1. V DS = 40V 2. 250μs Pulse Test -55°C 150°C 25°C I D , D ra in C ur re nt [A ] V GS , Gate-Source Voltage [V] 10-1 100 101 100 101 102 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V * Notes : 1. 250μs Pulse Test 2. T C = 25oC I D , D ra in C ur re nt [ A ] V DS , Drain-Source Voltage [V] 0 20 40 60 80 100 120 140 160 180 200 0.00 0.05 0.10 0.15 0.20 0.25 VGS = 20V V GS = 10V * Note : T J = 25°C R D S (O N ) [ Ω ], D ra in -S ou rc e O n- R es is ta nc e I D , Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 101 102 25°C150°C * Notes : 1. V GS = 0V 2. 250μs Pulse Test I D R , R e ve rs e D ra in C u rr en t [ A ] V SD , Source-Drain Voltage [V] 10 -1 10 0 10 1 0 5000 10000 15000 20000 25000 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd * Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss C ap ac ita nc e [p F ] V DS , Drain-Source Voltage [V] 0 50 100 150 200 250 0 2 4 6 8 10 12 V DS = 250V V DS = 100V V DS = 400V * Note : I D = 47A V G S , G at e- S ou rc e V ol ta ge [ V ] Q G , Total Gate Charge [nC]

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F C A 47N 60F — N -C h an n el S u p erF E T ® F R F E T ® M O S F E T ©2007 Fairchild Semiconductor Corporation FCA47N60F Rev. C2 www.fairchildsemi.com4 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 11. Transient Thermal Response Curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * Notes : 1. V GS = 0 V 2. I D = 250μA B V D S S , (N or m al iz ed ) D ra in -S ou rc e B re ak do w n V ol ta ge T J , Junction Temperature [°C] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * Notes : 1. V GS = 10 V 2. I D = 23.5 A R D S (O N ), (N or m al iz ed ) D ra in -S ou rc e O n -R es is ta n ce T J , Junction Temperature [°C] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 Operation in This Area is Limited by R DS(on) DC 10 ms 1 ms 100 μs * Notes : 1. T C = 25°C 2. T J = 150°C 3. Single Pulse I D , D ra in C u rr en t [A ] V DS , Drain-Source Voltage [V] 25 50 75 100 125 150 0 10 20 30 40 50 I D , D ra in C ur re nt [ A ] T C , Case Temperature [°C] 1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1 1 0 -2 1 0 -1 * N o te s : 1 . Z θ J C ( t) = 0 .3 °C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T JM - T C = P D M * Z θ JC ( t) s in g le p u ls e D = 0 .5 0 .0 2 0 .2 0 .0 5 0 .1 0 .0 1 Z θ J C (t ), T he rm al R es po ns e t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] t1 PDM t2 Z θJ C (t ), T he rm al R es po n se [o C /W ]

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F C A 47N 60F — N -C h an n el S u p erF E T ® F R F E T ® M O S F E T ©2007 Fairchild Semiconductor Corporation FCA47N60F Rev. C2 www.fairchildsemi.com5 Figure 12. Gate Charge Test Circuit & Waveform Figure 13. Resistive Switching Test Circuit & Waveforms Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms VGS VDS 10% 90% td(on) tr t on t off td(off) tf VDD 10V VDS RL DUT RG VGS VGS Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT EAS = L IAS2----2 1 -------------------- BVDSS - VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG L I D t p VGS IG = const.

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F C A 47N 60F — N -C h an n el S u p erF E T ® F R F E T ® M O S F E T ©2007 Fairchild Semiconductor Corporation FCA47N60F Rev. C2 www.fairchildsemi.com6 Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS + _ Driver RG Same Type as DUT VGS • dv/dt controlled by RG • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width Gate Pulse Period --------------------------

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F C A 47N 60F — N -C h an n el S u p erF E T ® F R F E T ® M O S F E T ©2007 Fairchild Semiconductor Corporation FCA47N60F Rev. C2 www.fairchildsemi.com7 Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003

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www.fairchildsemi.com8 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms AccuPower™ AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET® Global Power ResourceSM GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ mWSaver® OptoHiT™ OPTOLOGIC® OPTOPLANAR® PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM® STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ ®* TinyBoost® TinyBuck® TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT®* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ 仙童 ™ ® ™ Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev. I68 tm ® ©2007 Fairchild Semiconductor Corporation FCA47N60F Rev. C2 F C A 47N 60F — N -C h an n el S u p erF E T ® F R F E T ® M O S F E T

FCA47N60F Reviews

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Edit*****wers

November 13, 2020

All items individually packed in anti static bags and properly labeled.

Elia*****nsal

November 8, 2020

No complaints. Works perfectly every single one of them! great quality! No bent pins either!

Dami*****aman

November 8, 2020

Everything perfect. Great seller.

Rosi*****osby

October 29, 2020

All resistors exactly -0.01%. Pretty good.

Kar*****Klein

October 29, 2020

These are great for projects with the kids or doing any type of DIY projects. The case is nice to keep everything separated. Very nice.

Aubri*****Hicks

October 27, 2020

All OK, fast delivery, good quality. Product works as it should, Nice Seller.

Chri*****a Webb

October 25, 2020

It's an incredible place to buy the hard-to-find parts. Fair price, good quality and nice service! I would definitely do business with them again, thank you!

Maxi*****ustin

October 22, 2020

arrived well within time bracket, put this firm on my suppliers list, many thanks

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