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FDB2552_F085

FDB2552_F085

FDB2552_F085

For Reference Only

Part Number FDB2552_F085
Manufacturer Fairchild/ON Semiconductor
Description MOSFET N CH 150V 5A TO-263AB
Datasheet FDB2552_F085 Datasheet
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
In Stock 333
Quota Limit No Limit
Lead Time To be Confirmed
Estimated Delivery Time Jun 29 - Jul 4 (Choose Expedited Shipping)

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FDB2552_F085

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FDB2552_F085 Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FDB2552_F085 Datasheet
PackageTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SeriesAutomotive, AEC-Q101, PowerTrench?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25��C5A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2800pF @ 25V
Vgs (Max)��20V
Power Dissipation (Max)150W (Tc)
Rds On (Max) @ Id, Vgs36 mOhm @ 16A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK (TO-263AB)
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDB2552_F085 Datasheet

FDB2552_F085 Related Products

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FDB2552_F085 FDB20AN06A0 Fairchild/ON Semiconductor, MOSFET N-CH 60V 45A TO-263AB, TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Automotive, AEC-Q101, PowerTrench?
FDB2552_F085 FDG327N Fairchild/ON Semiconductor, MOSFET N-CH 20V 1.5A SC70-6, Package:6-TSSOP, SC-88, SOT-363, Series:Automotive, AEC-Q101, PowerTrench? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):150V, Current - Continuous Drain (Id) @ 25��C:5A (Ta), 37A (Tc), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs(th) (Max) @ Id:4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:51nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds:2800pF @ 25V, Vgs (Max):��20V, Power Dissipation (Max):150W (Tc), Rds On (Max) @ Id, Vgs:36 mOhm @ 16A, 10V, Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:D2PAK (TO-263AB), Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB2552_F085 FDB2552 Fairchild/ON Semiconductor, MOSFET N-CH 150V 37A TO-263AB, Package:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Series:Automotive, AEC-Q101, PowerTrench? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):150V, Current - Continuous Drain (Id) @ 25��C:5A (Ta), 37A (Tc), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs(th) (Max) @ Id:4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:51nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds:2800pF @ 25V, Vgs (Max):��20V, Power Dissipation (Max):150W (Tc), Rds On (Max) @ Id, Vgs:36 mOhm @ 16A, 10V, Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:D2PAK (TO-263AB), Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB2552_F085 FDB2572 Fairchild/ON Semiconductor, MOSFET N-CH 150V 29A TO-263AB, Package:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Series:Automotive, AEC-Q101, PowerTrench? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):150V, Current - Continuous Drain (Id) @ 25��C:5A (Ta), 37A (Tc), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs(th) (Max) @ Id:4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:51nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds:2800pF @ 25V, Vgs (Max):��20V, Power Dissipation (Max):150W (Tc), Rds On (Max) @ Id, Vgs:36 mOhm @ 16A, 10V, Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:D2PAK (TO-263AB), Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB2552_F085 FDB2532_F085 Fairchild/ON Semiconductor, MOSFET N-CH 150V 79A D2PAK, Package:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Series:Automotive, AEC-Q101, PowerTrench? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):150V, Current - Continuous Drain (Id) @ 25��C:5A (Ta), 37A (Tc), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs(th) (Max) @ Id:4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:51nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds:2800pF @ 25V, Vgs (Max):��20V, Power Dissipation (Max):150W (Tc), Rds On (Max) @ Id, Vgs:36 mOhm @ 16A, 10V, Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:D2PAK (TO-263AB), Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB2552_F085 FDB20N50F Fairchild/ON Semiconductor, MOSFET N-CH 500V 20A D2PAK, Package:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Series:Automotive, AEC-Q101, PowerTrench? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):150V, Current - Continuous Drain (Id) @ 25��C:5A (Ta), 37A (Tc), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs(th) (Max) @ Id:4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:51nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds:2800pF @ 25V, Vgs (Max):��20V, Power Dissipation (Max):150W (Tc), Rds On (Max) @ Id, Vgs:36 mOhm @ 16A, 10V, Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:D2PAK (TO-263AB), Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB2552_F085 FDB2532 Fairchild/ON Semiconductor, MOSFET N-CH 150V 79A D2PAK, Package:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Series:Automotive, AEC-Q101, PowerTrench? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):150V, Current - Continuous Drain (Id) @ 25��C:5A (Ta), 37A (Tc), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs(th) (Max) @ Id:4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:51nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds:2800pF @ 25V, Vgs (Max):��20V, Power Dissipation (Max):150W (Tc), Rds On (Max) @ Id, Vgs:36 mOhm @ 16A, 10V, Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:D2PAK (TO-263AB), Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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