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hot FDC6302P


For Reference Only

Part Number FDC6302P
Manufacturer Fairchild/ON Semiconductor
Description MOSFET 2P-CH 25V 0.12A SSOT6
Datasheet FDC6302P Datasheet
Package SOT-23-6 Thin, TSOT-23-6
In Stock 6320 piece(s)
Unit Price $ 0.2373 *
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FDC6302P Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Datasheet FDC6302P Datasheet
PackageSOT-23-6 Thin, TSOT-23-6
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25��C120mA
Rds On (Max) @ Id, Vgs10 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.31nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds11pF @ 10V
Power - Max700mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageSuperSOT?-6

FDC6302P Datasheet

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To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at Please email any questions regarding the system integration to Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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October 1997 FDC6302P Digital FET, Dual P-Channel General Description Features Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter FDC6302P Units VDSS Drain-Source Voltage -25 V VGSS Gate-Source Voltage -8 V ID Drain Current - Continuous -0.12 A - Pulsed -0.5 PD Maximum Power Dissipation (Note 1a) 0.9 W (Note 1b) 0.7 TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) 6.0 kV THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 140 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W FDC6302P Rev.C -25 V, -0.12 A continuous, -0.5 A Peak. RDS(ON) = 13 Ω @ VGS= -2.7 V RDS(ON) = 10 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple PNP digital transistors (IMHxA series) with one DMOS FET. These Dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switchimg applications. Since bias resistors are not required this one P-Channel FET can replace several digital transistors with different bias resistors like the IMBxA series. SOT-23 SuperSOT TM-8 SOIC-16SO-8 SOT-223SuperSOTTM-6 5 6 3 2 1 4 © 1997 Fairchild Semiconductor Corporation

Page 4

Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -25 V ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 o C -20 mV /o C IDSS Zero Gate Voltage Drain Current VDS = -20 V, VGS = 0 V -1 µA TJ = 55°C -10 µA IGSS Gate - Body Leakage Current VGS = -8 V, VDS= 0 V -100 nA ON CHARACTERISTICS (Note 2) ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 o C 1.9 mV /o C VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.65 -1 -1.5 V RDS(ON) Static Drain-Source On-Resistance VGS = -2.7 V, ID = -0.05A 10.6 13 Ω VGS = -4.5 V, ID = -0.2 A 7.9 10 TJ =125°C 12 18 ID(ON) On-State Drain Current VGS = -2.7 V, VDS = -5 V -0.05 A gFS Forward Transconductance VDS = -5 V, ID= -0.2 A 0.135 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz 11 pF Coss Output Capacitance 7 pF Crss Reverse Transfer Capacitance 1.4 pF SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time VDD = -6 V, ID = -0.2 A, VGS = -4.5 V, RGEN = 50 Ω 5 12 ns tr Turn - On Rise Time 8 16 ns tD(off) Turn - Off Delay Time 9 18 ns tf Turn - Off Fall Time 5 10 ns Qg Total Gate Charge VDS = -5 V, ID = - 0.2 A, VGS = -4.5 V 0.22 0.31 nC Qgs Gate-Source Charge 0.12 nC Qgd Gate-Drain Charge 0.05 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current -0.7 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.7 A (Note 2) -1 -1.3 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDC6302P Rev.C b. 180OC/W on a 0.005 in2 of pad of 2oz copper. a. 140OC/W on a 0.125 in2 pad of 2oz copper.

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FDC6302P Rev.C 0 1 2 3 4 0 0.05 0.1 0.15 0.2 -V , DRAIN-SOURCE VOLTAGE (V) -I , D R A IN -S O U R C E C U R R E N T (A ) V = -5.0VGS DS D -4.5 -2.7 -2.5 -2.0 -3.0 -3.5 -4.0 0 0.05 0.1 0.15 0.2 0.5 1 1.5 2 -I , DRAIN CURRENT (A) D R A IN -S O U R C E O N -R E S IS TA N C E R , N O R M A LI ZE D V = -2.0 VGS D D S (O N ) -3.5 -4.5 -2.7 -2.5 -3.0 -4.0 Typical Electrical Characteristics Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 3. On-Resistance Variation with Temperature. -3-2.5-2-1.5-1-0.5 -1 -0.75 -0.5 -0.25 0 V , GATE TO SOURCE VOLTAGE (V) I , D R A IN C U R R E N T (A ) V = -5VDS GS D T = -55°C J 125°C 25°C Figure 5. Transfer Characteristics. 0 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.01 0.1 0.5 -V , BODY DIODE FORWARD VOLTAGE (V) -I , R E V E R S E D R A IN C U R R E N T (A ) T = 125°CJ 25°C -55°C V = 0VGS SD S Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Figure 4. On Resistance Variation with Gate-To- Source Voltage. -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 T , JUNCTION TEMPERATURE (°C) D R A IN -S O U R C E O N -R E S IS TA N C E (O H M S ) J R , N O R M A LI ZE D D S (O N ) V = -2.7VGS I = -0.05AD 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 -V ,GATE TO SOURCE VOLTAGE (V) ,D R A IN -S O U R C E O N -R E S IS TA N C E GS R D S (O N ) I = -0.05ADT = 25°CA 125 °C

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FDC6302P Rev.C Figure 10. Single Pulse Maximum Power Dissipation. 0.1 0.3 1 2 5 10 15 25 1 2 3 5 10 15 25 -V , DRAIN TO SOURCE VOLTAGE (V) C A P A C IT A N C E (p F) DS C iss f = 1 MHz V = 0 VGS C oss C rss Figure 8. Capacitance Characteristics.Figure 7. Gate Charge Characteristics. Figure 9. Maximum Safe Operating Area. Typical Electrical And Thermal Characteristics 0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 Q , GATE CHARGE (nC) -V , G A TE -S O U R C E V O LT A G E (V ) g G S V = -5VDS -10 -15 I = -0.2AD 1 2 5 10 20 40 0.01 0.02 0.05 0.1 0.2 0.5 0.8 - V , DRAIN-SOURCE VOLTAGE (V) -I , D R A IN C U R R E N T (A ) RD S(O N) LIM IT D DC DS 1s 100ms 10ms V = -2.7V SINGLE PULSE R =See Note 1b T = 25°C GS A θJA 1ms 0.01 0.1 1 10 100 300 0 1 2 3 4 5 SINGLE PULSE TIME (SEC) P O W E R (W ) SINGLE PULSE R =See note 1b T = 25°C θJA A 0.0001 0.001 0.01 0.1 1 10 100 300 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) TR A N S IE N T TH E R M A L R E S IS TA N C E 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 r( t), N O R M A LI ZE D E FF E C TI V E Duty Cycle, D = t / t1 2 R (t) = r(t) * R R = See Note 1b θJAθJA θJA T - T = P * R (t)θJAAJ P(pk) t 1 t 2 Figure 11. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal response will change depending on the circuit board design.

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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ Rev. H4  ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET   STAR*POWER is used under license VCX™

FDC6302P Reviews

Average User Rating
5 / 5 (146)
★ ★ ★ ★ ★
5 ★
4 ★
3 ★
2 ★
1 ★


January 2, 2020

The capacitors were exactly the ones I wanted. Perfect fit.


November 1, 2019

Order arrived to Estonia in 3 days. Item as described. Well packed.


August 2, 2019

Very user friendly to find part and specs. Easy to deal with the transaction for different payment types. Thanks!

Mada***** West

July 6, 2019

Boundless range of products, ease of search and fast delivery continue to impress. Heisener is always my first stop for electronic components.


March 19, 2019

Serves its purpose. All that's needed.


February 6, 2019

Worked as advertised and good price. Can you imagine buying these at local store it would cost way to much.


January 29, 2019

Very much appreciate the thoughtful system to hold multiple orders, including back ordered items, can be shipped at once rather than incremental shipments.


January 22, 2019

2nd time buying these - quite good. Very fast shipping


August 3, 2018

Great product & fast shipping. Works as they should.


July 25, 2018

Very good connector, easy to realise and with Low price

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