Contact Us +86-755-83210559 ext. 811




For Reference Only

Part Number FDD8770
Manufacturer Fairchild/ON Semiconductor
Description MOSFET N-CH 25V 35A DPAK
Datasheet FDD8770 Datasheet
Package TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock 37,326 piece(s)
Unit Price $ 0.4295 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jun 8 - Jun 13 (Choose Expedited Shipping)
Request for Quotation

Part Number # FDD8770 (Transistors - FETs, MOSFETs - Single) is manufactured by Fairchild/ON Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For FDD8770 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add FDD8770 with quantity into BOM. does NOT require any registration to request a quote of FDD8770.

FDD8770 Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FDD8770Datasheet
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs73nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds3720pF @ 13V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)115W (Tc)
Rds On (Max) @ Id, Vgs4 mOhm @ 35A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

FDD8770 Datasheet

Page 1

Page 2

To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at Please email any questions regarding the system integration to Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

Page 3

F D D 8770/F D U 8770 N -C h an n el P o w erT ren ch ® M O S F E T ©2006 Fairchild Semiconductor Corporation FDD8770/FDU8770 Rev. 1.2 www.fairchildsemi.com1 FDD8770/FDU8770 N-Channel PowerTrench® MOSFET 25V, 35A, 4.0mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture Features Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 35A Max rDS(on) = 5.5mΩ at VGS = 4.5V, ID = 35A Low gate charge: Qg(10) = 52nC(Typ), VGS = 10V Low gate resistance RoHS Compliant MOSFET Maximum Ratings TC = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous (Package Limited) 35 A -Continuous (Die Limited) 210 -Pulsed (Note 1) 407 EAS Single Pulse Avalanche Energy (Note 2) 113 mJ PD Power Dissipation 115 W TJ, TSTG Operating and Storage Temperature -55 to 175 °C RθJC Thermal Resistance, Junction to Case TO-252,TO-251 1.3 °C/W RθJA Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W RθJA Thermal Resistance, Junction to Ambient TO-252,1in 2 copper pad area 52 °C/W Device Marking Device Package Reel Size Tape Width Quantity FDD8770 FDD8770 TO-252AA 13’’ 16mm 2500 units FDU8770 FDU8770 TO-251AA N/A(Tube) N/A 75 units FDU8770 FDU8770_F071 TO-251AA N/A(Tube) N/A 75 units D G S Short Lead I-PAK I-PAK (TO-251AA) G D S G D S March 2015 I N E PM OI T N L E AT M EERFDA E L

Page 4

F D D 8770/F D U 8770 N -C h an n el P o w erT ren ch ® M O S F E T FDD8770/FDU8770 Rev. 1.2 www.fairchildsemi.com2 Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 25 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C 13.6 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V 1 µA TJ = 150°C 250 IGSS Gate to Source Leakage Current VGS = ±20V ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 1.6 2.5 V ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -5.9 mV/°C rDS(on) Drain to Source On Resistance VGS = 10V, ID = 35A 3.3 4.0 mΩ VGS = 4.5V, ID = 35A 4.0 5.5 VGS = 10V, ID = 35A TJ = 175°C 4.8 5.9 Dynamic Characteristics Ciss Input Capacitance VDS = 13V, VGS = 0V, f = 1MHz 2795 3720 pF Coss Output Capacitance 685 915 pF Crss Reverse Transfer Capacitance 450 675 pF Rg Gate Resistance f = 1MHz 1.5 Ω Switching Characteristics td(on) Turn-On Delay Time VDD = 13V, ID = 35A VGS = 10V, RGS = 5Ω 10 20 ns tr Rise Time 12 22 ns td(off) Turn-Off Delay Time 49 78 ns tf Fall Time 25 40 ns Qg Total Gate Charge VGS = 0V to 10V VDD = 13V ID = 35A Ig = 1.0mA 52 73 nC Qg Total Gate Charge VGS = 0V to 5V 29 41 nC Qgs Gate to Source Gate Charge 8.1 nC Qgd Gate to Drain “Miller”Charge 11 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 35A 0.84 1.25 V VGS = 0V, IS = 15A 0.79 1.0 trr Reverse Recovery Time IF = 35A, di/dt = 100A/µs 32 48 ns Qrr Reverse Recovery Charge IF = 35A, di/dt = 100A/µs 25 38 nC Notes: 1: Pulse time < 300µs, Duty cycle = 2%. 2: Starting TJ = 25 oC, L = 0.3mH, IAS = 27.5A ,VDD = 23V, VGS = 10V.

Page 5

F D D 8770/F D U 8770 N -C h an n el P o w erT ren ch ® M O S F E T FDD8770/FDU8770 Rev. 1.2 www.fairchildsemi.com3 Typical Characteristics TJ = 25°C unless otherwise noted Figure 1. On Region Characteristics 0 1 2 3 4 0 20 40 60 80 100 120 I D , D R A IN C U R R E N T ( A ) VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 3.5V VGS = 3V VGS = 4.5V VGS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX Figure 2. Normalized 0 20 40 60 80 100 120 0 1 2 3 4 N O R M A L IZ E D D R A IN T O S O U R C E O N -R E S IS T A N C E ID, DRAIN CURRENT(A) VGS = 3V VGS = 3.5V VGS = 10V VGS = 4.5V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX On-Resistance vs Drain Current and Gate Voltage Figure 3. -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID = 35A VGS = 10V N O R M A L IZ E D D R A IN T O S O U R C E O N -R E S IS T A N C E TJ, JUNCTION TEMPERATURE (oC) Normalized On Resistance vs Junction Temperature Figure 4. 2 4 6 8 10 2 4 6 8 10 12 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX TJ = 175oC TJ = 25oC ID = 35A r D S (o n ), O N -R E S IS T A N C E ( m Ω ) VGS, GATE TO SOURCE VOLTAGE (V) On-Resistance vs Gate to Source Voltage Figure 5. Transfer Characteristics 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 20 40 60 80 100 120 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX TJ = -55oC TJ = 25oC TJ = 175oC I D , D R A IN C U R R E N T ( A ) VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1E-3 0.01 0.1 1 10 100 TJ = -55oC TJ = 25oC TJ = 175oC VGS = 0V I S , R E V E R S E D R A IN C U R R E N T ( A ) VSD, BODY DIODE FORWARD VOLTAGE (V) Source to Drain Diode Forward Voltage vs Source Current

Page 6

F D D 8770/F D U 8770 N -C h an n el P o w erT ren ch ® M O S F E T FDD8770/FDU8770 Rev. 1.2 www.fairchildsemi.com4 Figure 7. 0 10 20 30 40 50 60 0 2 4 6 8 10 VDD = 13V VDD = 16V VDD = 10V V G S , G A T E T O S O U R C E V O L T A G E (V ) Qg, GATE CHARGE(nC) Gate Charge Characteristics Figure 8. 0.1 1 10100 1000 6000 f = 1MHz VGS = 0V C A P A C IT A N C E ( p F ) VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss 30 Capacitance vs Drain to Source Voltage Figure 9. 0.01 0.1 1 10 100 1 10 50 TJ = 25oC TJ = 125oC TJ = 150oC tAV, TIME IN AVALANCHE(ms) I A S , A V A L A N C H E C U R R E N T ( A ) 300 Unclamped Inductive Switching Capability Figure 10. 25 50 75 100 125 150 175 0 50 100 150 200 250 I D , D R A IN C U R R E N T ( A ) TC, CASE TEMPERATURE(oC) RθJC = 1.3 oC/W VGS = 4.5V VGS = 10V Maximum Continuous Drain Current vs Case Temperature Figure 11. 1 10 0.1 1 10 100 600 100us 1ms 10ms 10us I D , D R A IN C U R R E N T ( A ) VDS, DRAIN TO SOURCE VOLTAGE (V) SINGLE PULSE TJ = MAX RATED TC = 25oC OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) DC 50 LIMITED BY PACKAGE Forward Bias Safe Operating Area Figure 12. Single 10-5 10-4 10-3 10-2 10-1 100 101 100 1000 10000 SINGLE PULSE VGS = 10V P ( P K ) , P E A K T R A N S IE N T P O W E R ( W ) t, PULSE WIDTH (s) 20000 TC = 25 oC I = I25 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 TC– 150 ---------------------- Pulse Maximum Power Dissipation Typical Characteristics TJ = 25°C unless otherwise noted

Page 7

F D D 8770/F D U 8770 N -C h an n el P o w erT ren ch ® M O S F E T FDD8770/FDU8770 Rev. 1.2 www.fairchildsemi.com5 Figure 13. Transient Thermal Response Curve 10-5 10-4 10-3 10-2 10-1 100 101 1E-3 0.01 0.1 1 DUTY CYCLE-DESCENDING ORDER N O R M A L IZ E D T H E R M A L IM P E D A N C E , Z θ J C t, RECTANGULAR PULSE DURATION(s) D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 2 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC Typical Characteristics TJ = 25°C unless otherwise noted

Page 8

FDD8770 Reviews

Average User Rating
5 / 5 (97)
★ ★ ★ ★ ★
5 ★
4 ★
3 ★
2 ★
1 ★

Write a Review

Not Rated
Thanks for Your Review!


May 29, 2020

Excellent, high quality product at a reasonable price. Timely delivery. Highly recommend product and vendor.


May 24, 2020

To be honest, I think you are doing an outstanding job.


May 21, 2020

Super easy to replace and labelled terminals made it a quick replacement.


May 17, 2020

The items I want are often in stock and available in small quantities.

Rea***** Kaur

May 14, 2020

So easy to do business with Heisener and they generally have stock on the items we need.


May 14, 2020

Worked wonderfully. Went through the instructions to the tea to make sure it was done correctly.


May 13, 2020

Heisener is awesome! Never any issues whatsoever. Product selection is good and delivery is on time.


May 4, 2020

I tested some and all look good.


April 24, 2020

Excellent ease of using site both in finding products and ordering! Also shipping charges reasonable.


April 18, 2020

It arrived earlier than the deadline. All is OK. Thank you

FDD8770 Guarantees

Service Guarantee

Service Guarantees

We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

FDD8770 Packaging

Verify Products
Customized Labels
Professional Packaging

FDD8770 Related Products

MKP386M439250JT2 MKP386M439250JT2 Vishay BC Components, CAP FILM 0.39UF 5% 2.5KVDC SCREW, Rectangular Box, PowerTrench? View
S6006LTP S6006LTP Littelfuse Inc., SCR NON-SENSITIVE GATE 6.0A 600V, TO-220-3 Isolated Tab, PowerTrench? View
74LVC1G02FW5-7 74LVC1G02FW5-7 Diodes Incorporated, IC GATE NOR 2INP X1DFN-6, 6-XDFN, PowerTrench? View
Y116910R0000A139R Y116910R0000A139R Vishay Foil Resistors (Division of Vishay Precision Group), RES SMD 10 OHM 0.05% 0.6W J LEAD, 3017 J-Lead, PowerTrench? View
ERJ-S08J363V ERJ-S08J363V Panasonic Electronic Components, RES SMD 36K OHM 5% 1/4W 1206, 1206 (3216 Metric), PowerTrench? View
VO4258D-X006 VO4258D-X006 Vishay Semiconductor Opto Division, OPTOISOLATOR 5.3KV TRIAC 6DIP, 6-DIP (0.400", 10.16mm), PowerTrench? View
1851151 1851151 Phoenix Contact, TERM BLOCK PLUG 13POS STR 3.81MM, -, PowerTrench? View
1866020000 1866020000 Weidmuller, TERM BLOCK PLUG 14POS STR, -, PowerTrench? View
1836244 1836244 Phoenix Contact, TERM BLOCK HDR 8POS 90DEG 5.08MM, -, PowerTrench? View
0874380743 0874380743 Molex, LLC, CONN HEADER 7POS 1.5MM R/A SMD, -, PowerTrench? View
VE-243-IY-F2 VE-243-IY-F2 Vicor Corporation, CONVERTER MOD DC/DC 24V 50W, Full Brick, PowerTrench? View
V300C12E75BL3 V300C12E75BL3 Vicor Corporation, CONVERTER MOD DC/DC 12V 75W, Quarter Brick, PowerTrench? View
Payment Methods
Delivery Services

Quick Inquiry


Certified Quality

Heisener's commitment to quality has shaped our processes for sourcing, testing, shipping, and every step in between. This foundation underlies each component we sell.

ISO9001:2015, ICAS, IAF, UKAS

View the Certificates

Do you have any question about FDD8770?

+86-755-83210559 ext. 811 heisener007 2354944915 Send Message

FDD8770 Tags

  • FDD8770
  • FDD8770 PDF
  • FDD8770 datasheet
  • FDD8770 specification
  • FDD8770 image
  • Fairchild/ON Semiconductor
  • Fairchild/ON Semiconductor FDD8770
  • buy FDD8770
  • FDD8770 price
  • FDD8770 distributor
  • FDD8770 supplier
  • FDD8770 wholesales

FDD8770 is Available in