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FDG6322C

hot FDG6322C

FDG6322C

For Reference Only

Part Number FDG6322C
Manufacturer Fairchild/ON Semiconductor
Description MOSFET N/P-CH 25V SC70-6
Datasheet FDG6322C Datasheet
Package 6-TSSOP, SC-88, SOT-363
In Stock 128452 piece(s)
Unit Price $ 0.1358 *
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FDG6322C

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FDG6322C Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Datasheet FDG6322C Datasheet
Package6-TSSOP, SC-88, SOT-363
Series-
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25��C220mA, 410mA
Rds On (Max) @ Id, Vgs4 Ohm @ 220mA, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds9.5pF @ 10V
Power - Max300mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6

FDG6322C Datasheet

Page 1

Page 2

To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

Page 3

FDG6322C Dual N & P Channel Digital FET General Description Features Absolute Maximum Ratings TA = 25 o C unless other wise noted Symbol Parameter N-Channel P-Channel Units VDSS Drain-Source Voltage 25 -25 V VGSS Gate-Source Voltage 8 -8 V ID Drain Current - Continuous 0.22 -0.41 A - Pulsed 0.65 -1.2 PD Maximum Power Dissipation (Note 1) 0.3 W TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) 6 kV THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note1) 415 °C/W FDG6322C Rev.F3 N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 Ω @ VGS= 4.5 V, RDS(ON) = 5.0 Ω @ VGS= 2.7 V. P-Ch -0.41 A,-25V, RDS(ON) = 1.1 Ω @ VGS= -4.5V, RDS(ON) = 1.5 Ω @ VGS= -2.7V. Very small package outline SC70-6. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. SC70-6 SuperSOT TM -6 SOIC-14SO-8SOT-8SOT-23 SC70-6 G1 D2 S1 D1 S2 G2 Mark: .22 pin 1 © 2012 Fairchild Semiconductor Corporation September 2013 5 3 2 4 1 6 Q1 Q2

Page 4

DMOS Electrical Characteristics (TA = 25 O C unless otherwise noted ) Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA N-Ch 25 V VGS = 0 V, ID = -250 µA P-Ch -25 ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C N-Ch 25 mV/ o C ID = -250 µA, Referenced to 25 o C P-Ch -22 IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS= 0 V, N-Ch 1 µA TJ = 55°C 10 IDSS Zero Gate Voltage Drain Current VDS =-20 V, VGS = 0 V, P-Ch -1 µA TJ = 55°C -10 IGSS Gate - Body Leakage Current VGS = 8 V, VDS = 0 V N-Ch 100 nA VGS = -8 V, VDS = 0 V P-Ch -100 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA N-Ch 0.65 0.85 1.5 V VDS = VGS, ID = -250 µA P-Ch -0.65 -0.82 -1.5 ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C N-Ch -2.1 mV/ o C ID= -250 µA, Referenced to 25 o C P-Ch 2.1 RDS(ON) Static Drain-Source On-Resistance VGS = 4.5 V, ID = 0.22 A N-Ch 2.6 4 Ω TJ =125°C 5.3 7 VGS = 2.7 V, ID = 0.19 A 3.7 5 VGS = -4.5 V, ID = -0.41 A P-Ch 0.85 1.1 TJ =125°C 1.2 1.9 VGS = -2.7 V, ID = -0.25 A 1.15 1.5 ID(ON) On-State Drain Current VGS = 4.5 V, VDS = 5 V N-Ch 0.22 A VGS = -4.5 V, VDS = -5 V P-Ch -0.41 gFS Forward Transconductance VDS = 5 V, ID= 0.22 A N-Ch 0.2 S VDS = -5 V, ID = -0.5 A P-Ch 0.9 DYNAMIC CHARACTERISTICS Ciss Input Capacitance N-Channel N-Ch 9.5 pF VDS = 10 V, VGS = 0 V, P-Ch 62 Coss Output Capacitance f = 1.0 MHz N-Ch 6 P-Channel P-Ch 34 Crss Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, N-Ch 1.3 f = 1.0 MHz P-Ch 10 FDG6322C Rev.F3

Page 5

Electrical Characteristics (continued) SWITCHING CHARACTERISTICS (Note 2) Symbol Parameter Conditions Type Min Typ Max Units tD(on) Turn - On Delay Time N-Channel N-Ch 5 10 nS VDD = 5 V, ID = 0.5 A, P-Ch 7 15 tr Turn - On Rise Time VGS = 4.5 V, RGEN = 50 Ω N-Ch 4.5 10 nS P-Ch 8 16 tD(off) Turn - Off Delay Time P-Channel N-Ch 4 8 nS VDD = -5 V, ID = -0.5 A, P-Ch 55 80 tf Turn - Off Fall Time VGS = -4.5 V, RGEN = 50 Ω N-Ch 3.2 7 nS P-Ch 35 60 Qg Total Gate Charge N-Channel N-Ch 0.29 0.4 nC VDS= 5 V, ID = 0.22 A, P-Ch 1.1 1.5 Qgs Gate-Source Charge VGS = 4.5 V N-Ch 0.12 nC P- Channel P-Ch 0.31 Qgd Gate-Drain Charge VDS = -5 V, ID = -0.41 A, N-Ch 0.03 nC VGS = -4.5 V P-Ch 0.29 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current N-Ch 0.25 A P-Ch -0.25 VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A (Note 2) N-Ch 0.8 1.2 V VGS = 0 V, IS = -0.5 A (Note 2) P-Ch -0.85 -1.2 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJA = 415 O C/W on minimum mounting pad on FR-4 board in still air. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDG6322C Rev.F3

Page 6

FDG6322C.Rev F3 Typical Electrical Characteristics: N-Channel Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 3. On-Resistance Variation with Temperature. Figure 5. Transfer Characteristics. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 1.8 T , JUNCTION TEMPERATURE (°C) D R A IN -S O U R C E O N -R E S IS T A N C E J R , N O R M A L IZ E D D S (O N ) V = 4.5VGS I = 0.22A D 0 1 2 3 4 5 0 0.1 0.2 0.3 0.4 0.5 V , DRAIN-SOURCE VOLTAGE (V) I , D R A IN -S O U R C E C U R R E N T ( A ) V =4.5VGS DS D 2.5V 3.0V 2.0V 3.5V 2.7V 0 0.1 0.2 0.3 0.4 2 2.5 3 3.5 4 4.5 5 I , DRAIN CURRENT (A) D R A IN -S O U R C E O N -R E S IS T A N C E V = 2.5VGS D R , N O R M A L IZ E D D S (O N ) 5.0V 4.5V 2.7V 4.0V 3.5V 3.0V 1 2 3 4 5 0 4 8 12 16 20 V ,GATE TO SOURCE VOLTAGE (V) R , O N -R E S IS T A N C E (O H M ) GS D S (O N ) 25°C I = 0.10AD T =125°CA 0.5 1 1.5 2 2.5 3 0 0.05 0.1 0.15 0.2 V , GATE TO SOURCE VOLTAGE (V) I , D R A IN C U R R E N T ( A ) V = 5V DS GS D T = -55°C J 125°C 25°C 0 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1 0.4 V , BODY DIODE FORWARD VOLTAGE (V) I , R E V E R S E D R A IN C U R R E N T ( A ) 25°C -55°C V = 0VGS SD S T = 125°CJ Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

Page 7

FDG6322C Rev.F3 Typical Electrical Characteristics: N-Channel (continued) Figure 10. Single Pulse Maximum Power Dissipation. Figure 8. Capacitance Characteristics.Figure 7. Gate Charge Characteristics. Figure 9. Maximum Safe Operating Area. 0 0.1 0.2 0.3 0.4 0.5 0.6 0 1 2 3 4 5 6 Q , GATE CHARGE (nC) V , G A T E -S O U R C E V O L T A G E ( V ) g G S I = 0.22AD V = 5VDS 10V 0.4 0.8 2 5 10 25 40 0.01 0.03 0.1 0.3 1 V , DRAIN-SOURCE VOLTAGE (V) I , D R A IN C U R R E N T ( A ) RD S( ON ) L IM IT D DC DS 10s 100ms 10ms V = 4.5V SINGLE PULSE R = 415 °C/W T = 25°C θJA GS A 1s 0.1 0.3 1 3 10 25 2 3 5 8 15 30 V , DRAIN TO SOURCE VOLTAGE (V) C A P A C IT A N C E ( p F ) DS C iss f = 1 MHz V = 0 VGS C oss C rss 0.0001 0.001 0.01 0.1 1 10 200 0 10 20 30 40 50 SINGLE PULSE TIME (SEC) P O W E R ( W ) SINGLE PULSE R =415°C/W T = 25°C θJA A

Page 8

FDG6322C Rev.F3 Typical Electrical Characteristics: P-Channel Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. Figure 15. Transfer Characteristics. Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 0 1 2 3 4 0 0.3 0.6 0.9 1.2 -V , DRAIN-SOURCE VOLTAGE (V) -I , D R A IN -S O U R C E C U R R E N T ( A ) V =-4.5VGS DS D -1.5V -2.7V -2.5V -2.0V -3.0V 0 0.2 0.4 0.6 0.8 1 1.2 0.5 1 1.5 2 2.5 -I , DRAIN CURRENT (A) D R A IN -S O U R C E O N -R E S IS T A N C E V = -2.0VGS D R , N O R M A L IZ E D D S (O N ) -3.5V -4.5V -2.7V -2.5V -3.0V 1 2 3 4 5 0 1 2 3 4 5 -V , GATE TO SOURCE VOLTAGE (V) R ,O N -R E S IS T A N C E (O H M ) GS D S (O N ) I = -0.2AD T = 125 ° CJ 25° C 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 -V , GATE TO SOURCE VOLTAGE (V) -I , D R A IN C U R R E N T ( A ) V = -5VDS GS D T = -55°C J 125°C 25°C 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1 1 -V , BODY DIODE FORWARD VOLTAGE (V) -I , R E V E R S E D R A IN C U R R E N T ( A ) T = 125°CJ 25°C -55°C V = 0VGS SD S Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 T , JUNCTION TEMPERATURE (°C) D R A IN -S O U R C E O N -R E S IS T A N C E J R , N O R M A L IZ E D D S (O N ) V = -4.5VGS I = -0.41AD Figure 13. On-Resistance Variation with Temperature.

Page 9

FDG6322C Rev.F3 1Typical Electrical Characteristics: P-Channel (continued) Figure 20. Single Pulse Maximum Power Dissipation. Figure 18. Capacitance Characteristics.Figure 17. Gate Charge Characteristics. Figure 19. Maximum Safe Operating Area. 0 0.4 0.8 1.2 1.6 0 1 2 3 4 5 Q , GATE CHARGE (nC) -V , G A T E -S O U R C E V O L T A G E ( V ) g G S V = -5VDS -10V -15V I = -0.41AD 0.1 0.2 0.5 1 2 5 10 25 40 0.01 0.05 0.1 0.5 1 3 - V , DRAIN-SOURCE VOLTAGE (V) -I , D R A IN C U R R E N T ( A ) RD S( ON ) L IM IT D A DS DC 1s 100m s 10m s 10s V = -4.5V SINGLE PULSE R = 415°C T = 25°C θJA GS A 1m s 0.1 0.3 1 2 5 10 25 3 5 10 30 80 200 -V , DRAIN TO SOURCE VOLTAGE (V) C A P A C IT A N C E ( p F ) DS C iss f = 1 MHz V = 0 VGS C oss C rss 0.0001 0.001 0.01 0.1 1 10 200 0 10 20 30 40 50 SINGLE PULSE TIME (SEC) P O W E R ( W ) SINGLE PULSE R =415°C/W T = 25°C θJA A

Page 10

FDG6322C Rev.F3 0.0001 0.001 0.01 0.1 1 10 100 200 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) T R A N S IE N T T H E R M A L R E S IS T A N C E r( t) , N O R M A L IZ E D E F F E C T IV E 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t / t1 2 T - T = P * R (t)AJ P(pk) t 1 t 2 θJA R (t) = r(t) * R R =415 °C/W θJA θJA θJA Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1. Transient thermalresponse will change depending on the circuit board design. Typical Thermal Characteristics: N & P-Channel (continued)

FDG6322C Reviews

Average User Rating
5 / 5 (168)
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Aust*****erry

January 2, 2020

Work Great. Would recommend. Only used 2. So I have 248 extras. Best deal by far that's why I got these.

An***** Pai

December 11, 2019

Absolutely the best source for wire, connectors, terminal strips, panel lights, etc. for model railroaders. Web site is the best in the business.

Gary*****agopal

December 11, 2019

What can I say, great value for the money. I only needed 2 but now I have some spares for future projects. They got the job done, nothing more I can say.

Anast*****Barajas

December 9, 2019

Very easy to co-operate with; they take care of orders promptly.

Eri*****Logan

November 20, 2019

Great dealing with you Guys. Thanks for a very prompt delivery.

Mcken*****owers

October 27, 2019

Great product at a great price. They were so CHEAP.

Camr*****allard

October 15, 2019

It arrived on time. I was able to finish a repair before Sunday service and with no over time. Easy to work with.

Jazm*****Medina

September 26, 2019

This seems to be a good set. I'll update more when I've tested these and can review their working quality.

Tiff*****Powell

September 8, 2019

It arrived earlier than the deadline. All is OK. Thank you

Kha*****Nolan

September 3, 2019

To be honest, I think you are doing an outstanding job.

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