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FDMC8010ET30

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FDMC8010ET30

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Part Number FDMC8010ET30
Manufacturer Fairchild/ON Semiconductor
Description MOSFET N-CH 30V 30A 8-PQFN
Datasheet FDMC8010ET30 Datasheet
Package 8-PowerWDFN
In Stock 301 piece(s)
Unit Price $ 0.8597 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 25 - Jan 30 (Choose Expedited Shipping)
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Part Number # FDMC8010ET30 (Transistors - FETs, MOSFETs - Single) is manufactured by Fairchild/ON Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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FDMC8010ET30 Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FDMC8010ET30Datasheet
Package8-PowerWDFN
SeriesPowerTrench?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C30A (Ta), 174A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs94nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds5860pF @ 15V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs1.3 mOhm @ 30A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePower33
Package / Case8-PowerWDFN

FDMC8010ET30 Datasheet

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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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January 2015 ©2015 Fairchild Semiconductor Corporation FDMC8010ET30 Rev. 1.0 www.fairchildsemi.com1 F D M C 8010E T 30 N -C h an n el P o w erT ren ch ® M O S F E T FDMC8010ET30 N-Channel PowerTrench® MOSFET 30 V, 174 A, 1.3 mΩ Features Extended TJ rating to 175°C Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions. Applications DC - DC Buck Converters Point of Load High Efficiency Load Switch and Low Side Switching Oring FET BottomTop Power 33 Pin 1 Pin 1 G D S S S D D D S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Volage (Note 4) ±20 V ID Drain Current -Continuous TC = 25 °C (Note 6) 174 A -Continuous TC = 100 °C (Note 6) 123 -Continuous TA = 25 °C (Note 1a) 30 -Pulsed (Note 5) 835 EAS Single Pulse Avalance Energy (Note 3) 153 mJ PD Power Dissipation TC = 25 °C 65 W Power Dissipation TA = 25 °C (Note 1a) 2.8 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 °C RθJC Thermal Resistance, Junction to Case 2.3 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 53 Device Marking Device Package Reel Size Tape Width Quantity FDMC8010ET FDMC8010ET30 Power 33 13 ’’ 12 mm 3000 units

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www.fairchildsemi.com2©2015 Fairchild Semiconductor Corporation FDMC8010ET30 Rev. 1.0 F D M C 8010E T 30 N -C h an n el P o w erT ren ch ® M O S F E T Electrical Characteristics TJ = 25 °C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, referenced to 25 °C 15 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.5 2.5 V ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 1 mA, referenced to 25 °C -5 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 30 A 0.9 1.3 mΩVGS = 4.5 V, ID = 25 A 1.3 1.8 VGS = 10 V, ID = 30A, TJ = 125 °C 1.3 2 gFS Forward Transconductance VDS = 5 V, ID = 30 A 188 S Ciss Input Capacitance VDS = 15 V, VGS = 0 V, f = 1 MHz 4405 5860 pF Coss Output Capacitance 1570 2090 pF Crss Reverse Transfer Capacitance 167 250 pF Rg Gate Resistance 0.1 0.5 1.25 Ω td(on) Turn-On Delay Time VDD = 15 V, ID = 30 A, VGS = 10 V, RGEN = 6 Ω 15 27 ns tr Rise Time 7.5 15 ns td(off) Turn-Off Delay Time 40 64 ns tf Fall Time 5.3 11 ns Qg Total Gate Charge VGS = 0 V to 10 V VDD = 15 V, ID = 30 A 67 94 nC Qg Total Gate Charge VGS = 0 V to 4.5 V 32 45 nC Qgs Gate to Source Charge 10 nC Qgd Gate to Drain “Miller” Charge 9.5 nC VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2 A (Note 2) 0.6 1.2 V VGS = 0 V, IS = 30 A (Note 2) 0.7 1.2 trr Reverse Recovery Time IF = 30 A, di/dt = 100 A/μs 49 78 ns Qrr Reverse Recovery Charge 29 46 nC Notes: 1. RθJA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. EAS of 153 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 32 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 47 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. 5. Pulsed Id please refer to Fig 11 SOA graph for more details. 6.Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. G D F D S S F S S G D F D S S F S S

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www.fairchildsemi.com3©2015 Fairchild Semiconductor Corporation FDMC8010ET30 Rev. 1.0 F D M C 8010E T 30 N -C h an n el P o w erT ren ch ® M O S F E T Typical Characteristics TJ = 25°C unless otherwise noted Figure 1. 0.0 0.2 0.4 0.6 0 30 60 90 120 150 VGS = 4.5 V VGS = 4 V VGS = 3.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 3 V VGS = 10 V I D , D R A IN C U R R E N T ( A ) VDS, DRAIN TO SOURCE VOLTAGE (V) On Region Characteristics Figure 2. 0 30 60 90 120 150 0 1 2 3 4 5 VGS = 4 V VGS = 3 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX N O R M A L IZ E D D R A IN T O S O U R C E O N -R E S IS T A N C E ID, DRAIN CURRENT (A) VGS = 3.5 V VGS = 4.5 V VGS = 10 V Normalized On-Resistance vs Drain Current and Gate Voltage Figure 3. Normalized On Resistance -75 -50 -25 0 25 50 75 100 125 150 175 0.6 0.9 1.2 1.5 1.8 ID = 30 A VGS = 10 V N O R M A L IZ E D D R A IN T O S O U R C E O N -R E S IS T A N C E TJ, JUNCTION TEMPERATURE (oC) vs Junction Temperature Figure 4. 2 4 6 8 10 0 1 2 3 4 5 TJ = 150 oC ID = 30 A TJ = 25 oC VGS, GATE TO SOURCE VOLTAGE (V) r D S (o n ), D R A IN T O S O U R C E O N -R E S IS T A N C E ( m Ω ) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX On-Resistance vs Gate to Source Voltage Figure 5. Transfer Characteristics 1.0 1.5 2.0 2.5 3.0 0 30 60 90 120 150 TJ = 175 oC VDS = 5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX TJ = -55 oC TJ = 25 oC I D , D R A IN C U R R E N T ( A ) VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 200 TJ = -55 oC TJ = 25 oC TJ = 175 oC VGS = 0 V I S , R E V E R S E D R A IN C U R R E N T ( A ) VSD, BODY DIODE FORWARD VOLTAGE (V) Source to Drain Diode Forward Voltage vs Source Current

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www.fairchildsemi.com4©2015 Fairchild Semiconductor Corporation FDMC8010ET30 Rev. 1.0 F D M C 8010E T 30 N -C h an n el P o w erT ren ch ® M O S F E T Figure 7. 0 20 40 60 80 0 2 4 6 8 10 ID = 30 A VDD = 18 V VDD = 12 V V G S , G A T E T O S O U R C E V O L T A G E ( V ) Qg, GATE CHARGE (nC) VDD = 15 V Gate Charge Characteristics Figure 8. 0.1 1 10 30 100 1000 10000 f = 1 MHz VGS = 0 V C A P A C IT A N C E ( p F ) VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss Capacitance vs Drain to Source Voltage Figure 9. 0.01 0.1 1 10 100 500 1 10 100 TJ = 100 oC TJ = 25 oC TJ = 150 oC tAV, TIME IN AVALANCHE (ms) I A S , A V A L A N C H E C U R R E N T ( A ) Unclamped Inductive Switching Capability Figure 10. 25 50 75 100 125 150 175 0 50 100 150 200 VGS = 4.5 V RθJC = 2.3 oC/W VGS = 10 V I D , D R A IN C U R R E N T ( A ) TC, CASE TEMPERATURE ( o C) Maximum Continuous Drain Current vs Case Temperature Figure 11. Forward Bias Safe Operating Area 0.05 0.1 1 10 100 0.1 1 10 100 1000 10 μs CURVE BENT TO MEASURED DATA 100 μs 10 ms DC 1 ms I D , D R A IN C U R R E N T ( A ) VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED RθJC = 2.3 oC/W TC = 25 oC Figure 12. 10-5 10-4 10-3 10-2 10-1 1 10 100 1000 10000 SINGLE PULSE RθJC = 2.3 oC/W TC = 25 oC P ( P K ), P E A K T R A N S IE N T P O W E R ( W ) t, PULSE WIDTH (sec) Single Pulse Maximum Power Dissipation Typical Characteristics TJ = 25°C unless otherwise noted

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www.fairchildsemi.com5©2015 Fairchild Semiconductor Corporation FDMC8010ET30 Rev.1.0 F D M C 8010E T 30 N -C h an n el P o w erT ren ch ® M O S F E T Figure 13. 10-5 10-4 10-3 10-2 10-1 1 0.001 0.01 0.1 1 2 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE DUTY CYCLE-DESCENDING ORDER r( t) , N O R M A L IZ E D E F F E C T IV E T R A N S IE N T T H E R M A L R E S IS IT A N C E t, RECTANGULAR PULSE DURATION (sec) PDM t1 t2 NOTES: ZθJC(t) = r(t) x RθJC RθJC = 2.3 oC/W Duty Cycle, D = t1 / t2 Peak TJ = PDM x ZθJC(t) + TC Junction-to-Case Transient Thermal Response Curve Typical Characteristics TJ = 25°C unless otherwise noted

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NOTES: UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. BA, DATED OCTOBER 2002. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. E) DRAWING FILE NAME: PQFN08HREV1 8 1 5 4 41 8 5 LAND PATTERN RECOMMENDATION 1 4 8 5 PKG CL PKG LC PKG LC LC SYM PKG CL A B SCALE: 2X SEE DETAIL A 3.40 3.20 3.40 3.20 1.95 0.65 0.37 0.27 (8X) 0.50 0.30 2.05 1.85 0.10 C A B (0.34) (2.27)(0.52 TYP) 0.25 0.15 0.80 0.70 0.10 C 0.08 C 0.05 0.00 C SEATING PLANE 2.37 MIN (0.45) (0.40) (0.65) 2.15 MIN 0.70 MIN 0.42 MIN (8X)1.95 0.65 PIN 1 INDICATOR (0.33) TYP

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