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FDMF6823B

hot FDMF6823B

FDMF6823B

For Reference Only

Part Number FDMF6823B
Manufacturer Fairchild/ON Semiconductor
Description MODULE DRMOS 55A 40-PQFN
Datasheet FDMF6823B Datasheet
Package 40-PowerTFQFN
In Stock 293 piece(s)
Unit Price $ 2.394 *
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FDMF6823B Specifications

ManufacturerFairchild/ON Semiconductor
CategoryIntegrated Circuits (ICs) - PMIC - Full, Half-Bridge Drivers
Datasheet FDMF6823B Datasheet
Package40-PowerTFQFN
SeriesXS? DrMOS
Output ConfigurationHalf Bridge
ApplicationsSynchronous Buck Converters
InterfacePWM
Load TypeInductive
TechnologyDrMOS
Rds On (Typ)1 Ohm LS, 1 Ohm HS
Current - Output / Channel55A
Voltage - Supply4.5 V ~ 5.5 V
Voltage - Load3 V ~ 16 V
Operating Temperature-40°C ~ 150°C (TJ)
FeaturesBootstrap Circuit, Status Flag
Fault ProtectionOver Temperature, Shoot-Through, UVLO
Mounting TypeSurface Mount
Package / Case40-PowerTFQFN
Supplier Device Package40-PQFN (6x6)

FDMF6823B Datasheet

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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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April 2013 © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMF6823B • Rev. 1.0.3 F D M F 6823B — E xtra-S m all, H ig h -P erfo rm an ce, H ig h -F req u en cy D rM O S M o d u le FDMF6823B — Extra-Small, High-Performance, High-Frequency DrMOS Module Benefits  Ultra-Compact 6x6 mm PQFN, 72% Space-Saving Compared to Conventional Discrete Solutions  Fully Optimized System Efficiency  Clean Switching Waveforms with Minimal Ringing  High-Current Handling Features  Over 93% Peak-Efficiency  High-Current Handling: 55 A  High-Performance PQFN Copper-Clip Package  3-State 5 V PWM Input Driver  Skip-Mode SMOD# (Low-Side Gate Turn Off) Input  Thermal Warning Flag for Over-Temperature Condition  Driver Output Disable Function (DISB# Pin)  Internal Pull-Up and Pull-Down for SMOD# and DISB# Inputs, Respectively  Fairchild PowerTrench® Technology MOSFETs for Clean Voltage Waveforms and Reduced Ringing  Fairchild SyncFET™ (Integrated Schottky Diode) Technology in Low-Side MOSFET  Integrated Bootstrap Schottky Diode  Adaptive Gate Drive Timing for Shoot-Through Protection  Under-Voltage Lockout (UVLO)  Optimized for Switching Frequencies up to 1 MHz  Low-Profile SMD Package  Fairchild Green Packaging and RoHS Compliance  Based on the Intel® 4.0 DrMOS Standard Description The XS™ DrMOS family is Fairchild’s next-generation, fully optimized, ultra-compact, integrated MOSFET plus driver power stage solution for high-current, high- frequency, synchronous buck DC-DC applications. The FDMF6823B integrates a driver IC, two power MOSFETs, and a bootstrap Schottky diode into a thermally enhanced, ultra-compact 6x6 mm package. With an integrated approach, the complete switching power stage is optimized with regard to driver and MOSFET dynamic performance, system inductance, and power MOSFET RDS(ON). XS™ DrMOS uses Fairchild's high-performance PowerTrench® MOSFET technology, which dramatically reduces switch ringing, eliminating the need for snubber circuit in most buck converter applications. A driver IC with reduced dead times and propagation delays further enhances the performance. A thermal warning function warns of a potential over-temperature situation. The FDMF6823B also incorporates a Skip Mode (SMOD#) for improved light-load efficiency. The FDMF6823B also provides a 3-state 5 V PWM input for compatibility with a wide range of PWM controllers. Applications  High-Performance Gaming Motherboards  Compact Blade Servers, V-Core and Non-V-Core DC-DC Converters  Desktop Computers, V-Core and Non-V-Core DC-DC Converters  Workstations  High-Current DC-DC Point-of-Load Converters  Networking and Telecom Microprocessor Voltage Regulators  Small Form-Factor Voltage Regulator Modules Ordering Information Part Number Current Rating Package Top Mark FDMF6823B 55 A 40-Lead, Clipbond PQFN DrMOS, 6.0 mm x 6.0 mm Package FDMF6823B

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© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMF6823B • Rev. 1.0.3 2 F D M F 6823B — E xtra-S m all, H ig h -P erfo rm an ce, H ig h -F req u en cy D rM O S M o d u le Typical Application Circuit V5V DISB# PWM Input OFF ON C VDRV CVIN CBOOT RBOOT LOUT COUT VIN FDMF6823C Open- Drain Output VDRV VCIN VIN PWM THWN# BOOT CGND PGND DISB# PHASE SMOD# CVCIN VOUT VSWH 3V ~ 16VRVCIN Figure 1. Typical Application Circuit DrMOS Block Diagram Figure 2. DrMOS Block Diagram SMOD# PWM VCIN VDRV VIN PGND PHASE GH DBoot BOOT GL CGND DISB# THWN# Q1 HS Power MOSFET Input 3- State Logic RUP_PWM VCIN VCIN UVLO GH Logic Level-Shift Dead-Time Control Temp. Sense 30kΩ GL Logic 10µA 10µA RDN_PWM Q2 LS Power MOSFET VSWH VDRV 30kΩ

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© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMF6823B • Rev. 1.0.3 3 F D M F 6823B — E xtra-S m all, H ig h -P erfo rm an ce, H ig h -F req u en cy D rM O S M o d u le Pin Configuration Figure 3. Bottom View Figure 4. Top View Pin Definitions Pin # Name Description 1 SMOD# When SMOD#=HIGH, the low-side driver is the inverse of the PWM input. When SMOD#=LOW, the low-side driver is disabled. This pin has a 10 µA internal pull-up current source. Do not add a noise filter capacitor. 2 VCIN IC bias supply. Minimum 1 µF ceramic capacitor is recommended from this pin to CGND. 3 VDRV Power for the gate driver. Minimum 1 µF ceramic capacitor is recommended to be connected as close as possible from this pin to CGND. 4 BOOT Bootstrap supply input. Provides voltage supply to the high-side MOSFET driver. Connect a bootstrap capacitor from this pin to PHASE. 5, 37, 41 CGND IC ground. Ground return for driver IC. 6 GH For manufacturing test only. This pin must float; it must not be connected to any pin. 7 PHASE Switch node pin for bootstrap capacitor routing. Electrically shorted to VSWH pin. 8 NC No connect. The pin is not electrically connected internally, but can be connected to VIN for convenience. 9 - 14, 42 VIN Power input. Output stage supply voltage. 15, 29 - 35, 43 VSWH Switch node input. Provides return for high-side bootstrapped driver and acts as a sense point for the adaptive shoot-through protection. 16 – 28 PGND Power ground. Output stage ground. Source pin of the low-side MOSFET. 36 GL For manufacturing test only. This pin must float; it must not be connected to any pin. 38 THWN# Thermal warning flag, open collector output. When temperature exceeds the trip limit, the output is pulled LOW. THWN# does not disable the module. 39 DISB# Output disable. When LOW, this pin disables the power MOSFET switching (GH and GL are held LOW). This pin has a 10 µA internal pull-down current source. Do not add a noise filter capacitor. 40 PWM PWM signal input. This pin accepts a three-state 5 V PWM signal from the controller.

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© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMF6823B • Rev. 1.0.3 4 F D M F 6823B — E xtra-S m all, H ig h -P erfo rm an ce, H ig h -F req u en cy D rM O S M o d u le Absolute Maximum Ratings Stresses exceeding the Absolute Maximum Ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Min. Max. Unit VCIN Supply Voltage Referenced to CGND -0.3 6.0 V VDRV Drive Voltage Referenced to CGND -0.3 6.0 V VDISB# Output Disable Referenced to CGND -0.3 6.0 V VPWM PWM Signal Input Referenced to CGND -0.3 6.0 V VSMOD# Skip Mode Input Referenced to CGND -0.3 6.0 V VGL Low Gate Manufacturing Test Pin Referenced to CGND -0.3 6.0 V VTHWN# Thermal Warning Flag Referenced to CGND -0.3 6.0 V VIN Power Input Referenced to PGND, CGND -0.3 25.0 V VBOOT Bootstrap Supply Referenced to VSWH, PHASE -0.3 6.0 V Referenced to CGND -0.3 25.0 V VGH High Gate Manufacturing Test Pin Referenced to VSWH, PHASE -0.3 6.0 V Referenced to CGND -0.3 25.0 V VPHS PHASE Referenced to CGND -0.3 25.0 V VSWH Switch Node Input Referenced to PGND, CGND (DC Only) -0.3 25.0 V Referenced to PGND, <20 ns -8.0 28.0 V VBOOT Bootstrap Supply Referenced to VDRV 22.0 V Referenced to VDRV, <20 ns 25.0 V ITHWN# THWN# Sink Current -0.1 7.0 mA IO(AV) Output Current (1) fSW=300 kHz, VIN=12 V, VO=1.0 V 55 A fSW=1 MHz, VIN=12 V, VO=1.0 V 50 θJPCB Junction-to-PCB Thermal Resistance 2.7 °C/W TA Ambient Temperature Range -40 +125 °C TJ Maximum Junction Temperature +150 °C TSTG Storage Temperature Range -55 +150 °C ESD Electrostatic Discharge Protection Human Body Model, JESD22-A114 2000 V Charged Device Model, JESD22-C101 2500 Note: 1. IO(AV) is rated using Fairchild’s DrMOS evaluation board, at TA = 25°C, with natural convection cooling. This rating is limited by the peak DrMOS temperature, TJ = 150°C, and varies depending on operating conditions and PCB layout. This rating can be changed with different application settings. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol Parameter Min. Typ. Max. Unit VCIN Control Circuit Supply Voltage 4.5 5.0 5.5 V VDRV Gate Drive Circuit Supply Voltage 4.5 5.0 5.5 V VIN Output Stage Supply Voltage 3.0 12.0 16.0 (2) V Note: 2. Operating at high VIN can create excessive AC overshoots on the VSWH-to-GND and BOOT-to-GND nodes during MOSFET switching transients. For reliable DrMOS operation, VSWH-to-GND and BOOT-to-GND must remain at or below the Absolute Maximum Ratings shown in the table above. Refer to the “Application Information” and “PCB Layout Guidelines” sections of this datasheet for additional information.

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© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMF6823B • Rev. 1.0.3 5 F D M F 6823B — E xtra-S m all, H ig h -P erfo rm an ce, H ig h -F req u en cy D rM O S M o d u le Electrical Characteristics Typical values are VIN = 12 V, VCIN = 5 V, VDRV = 5 V, and TA = TJ = +25°C unless otherwise noted. Symbol Parameter Condition Min. Typ. Max. Unit Basic Operation IQ Quiescent Current IQ=IVCIN+IVDRV, PWM=LOW or HIGH or Float 2 mA VUVLO UVLO Threshold VCIN Rising 2.9 3.1 3.3 V VUVLO_Hys UVLO Hysteresis 0.4 V PWM Input (VCIN = VDRV = 5 V ±10%) RUP_PWM Pull-Up Impedance VPWM=5 V 10 kΩ RDN_PWM Pull-Down Impedance VPWM=0 V 10 kΩ VIH_PWM PWM High Level Voltage 3.04 3.55 4.05 V VTRI_HI 3-State Upper Threshold 2.95 3.45 3.94 V VTRI_LO 3-State Lower Threshold 0.98 1.25 1.52 V VIL_PWM PWM Low Level Voltage 0.84 1.15 1.42 V tD_HOLD-OFF 3-State Shut-Off Time 160 200 ns VHiZ_PWM 3-State Open Voltage 2.20 2.50 2.80 V tPWM-OFF_MIN PWM Minimum Off Time 120 ns PWM Input (VCIN = VDRV = 5 V ±5%) RUP_PWM Pull-Up Impedance VPWM=5 V 10 kΩ RDN_PWM Pull-Down Impedance VPWM=0 V 10 kΩ VIH_PWM PWM High Level Voltage 3.22 3.55 3.87 V VTRI_HI 3-State Upper Threshold 3.13 3.45 3.77 V VTRI_LO 3-State Lower Threshold 1.04 1.25 1.46 V VIL_PWM PWM Low Level Voltage 0.90 1.15 1.36 V tD_HOLD-OFF 3-State Shut-Off Time 160 200 ns VHiZ_PWM 3-State Open Voltage 2.30 2.50 2.70 V tPWM-OFF_MIN PWM Minimum Off Time 120 ns DISB# Input VIH_DISB High-Level Input Voltage 2 V VIL_DISB Low-Level Input Voltage 0.8 V IPLD Pull-Down Current 10 µA tPD_DISBL Propagation Delay PWM=GND, Delay Between DISB# from HIGH to LOW to GL from HIGH to LOW 25 ns tPD_DISBH Propagation Delay PWM=GND, Delay Between DISB# from LOW to HIGH to GL from LOW to HIGH 25 ns SMOD# Input VIH_SMOD High-Level Input Voltage 2 V VIL_SMOD Low-Level Input Voltage 0.8 V IPLU Pull-Up Current 10 µA tPD_SLGLL Propagation Delay PWM=GND, Delay Between SMOD# from HIGH to LOW to GL from HIGH to LOW 10 ns tPD_SHGLH Propagation Delay PWM=GND, Delay Between SMOD# from LOW to HIGH to GL from LOW to HIGH 10 ns Continued on the following page…

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© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMF6823B • Rev. 1.0.3 6 F D M F 6823B — E xtra-S m all, H ig h -P erfo rm an ce, H ig h -F req u en cy D rM O S M o d u le Electrical Characteristics Typical values are VIN = 12 V, VCIN = 5 V, VDRV = 5 V, and TA = TJ = +25°C unless otherwise noted. Symbol Parameter Condition Min. Typ. Max. Unit Thermal Warning Flag TACT Activation Temperature 150 °C TRST Reset Temperature 135 °C RTHWN Pull-Down Resistance IPLD=5 mA 30 Ω 250 ns Timeout Circuit tD_TIMEOUT Timeout Delay SW=0V, Delay Between GH from HIGH to LOW and GL from LOW to HIGH 250 ns High-Side Driver (fSW = 1000 kHz, IOUT = 30 A, TA = +25°C) RSOURCE_GH Output Impedance, Sourcing Source Current=100 mA 1 Ω RSINK_GH Output Impedance, Sinking Sink Current=100 mA 0.8 Ω tR_GH Rise Time GH=10% to 90% 10 ns tF_GH Fall Time GH=90% to 10% 10 ns tD_DEADON LS to HS Deadband Time GL Going LOW to GH Going HIGH, 1.0 V GL to 10% GH 15 ns tPD_PLGHL PWM LOW Propagation Delay PWM Going LOW to GH Going LOW, VIL_PWM to 90% GH 20 30 ns tPD_PHGHH PWM HIGH Propagation Delay (SMOD# =0) PWM Going HIGH to GH Going HIGH, VIH_PWM to 10% GH (SMOD# =0, ID_LS>0) 30 ns tPD_TSGHH Exiting 3-State Propagation Delay PWM (From 3-State) Going HIGH to GH Going HIGH, VIH_PWM to 10% GH 30 ns Low-Side Driver (fSW = 1000 kHz, IOUT = 30 A, TA = +25°C) RSOURCE_GL Output Impedance, Sourcing Source Current=100 mA 1 Ω RSINK_GL Output Impedance, Sinking Sink Current=100 mA 0.5 Ω tR_GL Rise Time GL=10% to 90% 25 ns tF_GL Fall Time GL=90% to 10% 10 ns tD_DEADOFF HS to LS Deadband Time SW Going LOW to GL Going HIGH, 2.2 V SW to 10% GL 15 ns tPD_PHGLL PWM-HIGH Propagation Delay PWM Going HIGH to GL Going LOW, VIH_PWM to 90% GL 10 25 ns tPD_TSGLH Exiting 3-State Propagation Delay PWM (From 3-State) Going LOW to GL Going HIGH, VIL_PWM to 10% GL 20 ns Boot Diode VF Forward-Voltage Drop IF=20 mA 0.3 V VR Breakdown Voltage IR=1 mA 22 V

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© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMF6823B • Rev. 1.0.3 7 F D M F 6823B — E xtra-S m all, H ig h -P erfo rm an ce, H ig h -F req u en cy D rM O S M o d u le Figure 5. PWM Timing Diagram t D_DEADON PWM VSWH GH to VSWH GL tPD_PHGLL tD_DEADOFF V IH_PWM V IL_PWM 90% 90% 1.0V 10% t PD PLGHL 10% 1.2V 250ns Timeout) D_TIMEOUT t ( 2.2V

Page 10

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMF6823B • Rev. 1.0.3 8 F D M F 6823B — E xtra-S m all, H ig h -P erfo rm an ce, H ig h -F req u en cy D rM O S M o d u le Typical Performance Characteristics Test Conditions: VIN=12 V, VOUT=1 V, VCIN=5 V, VDRV=5 V, LOUT=250 nH, TA=25°C, and natural convection cooling, unless otherwise specified. Figure 6. Safe Operating Area Figure 7. Power Loss vs. Output Current Figure 8. Power Loss vs. Switching Frequency Figure 9. Power Loss vs. Input Voltage Figure 10. Power Loss vs. Driver Supply Voltage Figure 11. Power Loss vs. Output Voltage 0 5 10 15 20 25 30 35 40 45 50 55 0 25 50 75 100 125 150 M o d u le O u tp u t C u rr e n t, I O U T (A ) PCB Temperature, TPCB (°C) FSW = 300kHz FSW = 1000kHz VIN = 12V, VDRV & VCIN = 5V, VOUT = 1V 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 15 20 25 30 35 40 45 50 55 M o d u le P o w e r L o s s , P L M O D (W ) Module Output Current, IOUT (A) 300kHz 500kHz 800kHz 1000kHz VIN = 12V, VDRV & VCIN = 5V, VOUT = 1V 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 100 200 300 400 500 600 700 800 900 1000 1100 N o rm a li ze d M o d u le P o w e r L o s s Module Switching Frequency, FSW (kHz) VIN = 12V, VDRV & VCIN = 5V, VOUT = 1V, IOUT = 30A 0.96 0.98 1.00 1.02 1.04 1.06 1.08 1.10 4 6 8 10 12 14 16 18 N o rm a li ze d M o d u le P o w e r L o s s Module Input Voltage, VIN (V) VDRV & VCIN = 5V, VOUT = 1V, FSW = 300kHz, IOUT = 30A 0.90 0.95 1.00 1.05 1.10 1.15 4.0 4.5 5.0 5.5 6.0 N o rm a li ze d M o d u le P o w e r L o s s Driver Supply Voltage, VDRV & VCIN (V) VIN = 12V, VOUT = 1V, FSW = 300kHz, IOUT = 30A 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 N o rm a li ze d M o d u le P o w e r L o s s Module Output Voltage, VOUT (V) VIN = 12V, VDRV & VCIN = 5V, FSW = 300kHz, IOUT = 30A

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