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FDN86246

hot FDN86246

FDN86246

For Reference Only

Part Number FDN86246
Manufacturer Fairchild/ON Semiconductor
Description MOSFET N-CH 150V 1.6A 3SSOT
Datasheet FDN86246 Datasheet
Package TO-236-3, SC-59, SOT-23-3
In Stock 70216 piece(s)
Unit Price $ 0.4004 *
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FDN86246 Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FDN86246 Datasheet
PackageTO-236-3, SC-59, SOT-23-3
SeriesPowerTrench?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25��C1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds225pF @ 75V
Vgs (Max)��20V
Power Dissipation (Max)1.5W (Ta)
Rds On (Max) @ Id, Vgs261 mOhm @ 1.6A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT-3
Package / CaseTO-236-3, SC-59, SOT-23-3

FDN86246 Datasheet

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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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F D N 8 6 2 4 6 N -C h a n n e l P o w e rT re n c h ® M O S F E T ©2010 Fairchild Semiconductor Corporation FDN86246 Rev.C www.fairchildsemi.com1 December 2010 FDN86246 N-Channel PowerTrench® MOSFET 150 V, 1.6 A, 261 m Features  Max rDS(on) = 261 m at VGS = 10 V, ID = 1.6 A  Max rDS(on) = 359 m at VGS = 6 V, ID = 1.4 A  High performance trench technology for extremely low rDS(on)  High power and current handling capability in a widely used surface mount package  Fast switching speed  100% UIL tested  RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Application  PD Switch MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 150 V VGS Gate to Source Voltage ±20 V ID -Continuous (Note 1a) 1.6 A -Pulsed 6 EAS Single Pulse Avalanche Energy (Note 3) 13 mJ PD Power Dissipation (Note 1a) 1.5 W Power Dissipation (Note 1b) 0.6 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RJC Thermal Resistance, Junction to Case (Note 1) 75 °C/W RJA Thermal Resistance, Junction to Ambient (Note 1a) 80 Device Marking Device Package Reel Size Tape Width Quantity 246 FDN86246 SSOT-3 7 ’’ 8 mm 3000 units

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F D N 8 6 2 4 6 N -C h a n n e l P o w e rT re n c h ® M O S F E T ©2010 Fairchild Semiconductor Corporation FDN86246 Rev.C www.fairchildsemi.com2 Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V 150 V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25 °C 106 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 A IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A 2 3.4 4 V VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 A, referenced to 25 °C -9 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 1.6 A 195 261 mVGS = 6 V, ID = 1.4 A 242 359 VGS = 10 V, ID = 1.6 A, TJ = 125 °C 359 481 gFS Forward Transconductance VDS = 10 V, ID = 1.6 A 4 S (Note 2) Dynamic Characteristics Ciss Input Capacitance VDS = 75 V, VGS = 0 V, f = 1 MHz 168 225 pF Coss Output Capacitance 21 30 pF Crss Reverse Transfer Capacitance 1.6 5 pF Rg Gate Resistance 0.9  Switching Characteristics td(on) Turn-On Delay Time VDD = 75 V, ID = 1.6 A, VGS = 10 V, RGEN = 6  4.5 10 ns tr Rise Time 1.1 10 ns td(off) Turn-Off Delay Time 8 16 ns tf Fall Time 2.9 10 ns Qg Total Gate Charge VGS = 0 V to 10 V VDD = 75 V, ID = 1.6 A 2.9 5 nC Qg Total Gate Charge VGS = 0 V to 5 V 1.6 3 nC Qgs Gate to Source Gate Charge 0.9 nC Qgd Gate to Drain “Miller” Charge 0.8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 1.6 A (Note 2) 0.83 1.3 V trr Reverse Recovery Time IF = 1.6 A, di/dt = 100 A/s 44 70 ns Qrr Reverse Recovery Charge 29 47 nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 3 A, VDD = 150 V, VGS = 10 V. 80 °C/W when mounted on a 1 in2 pad of 2 oz copper a) 180 °C/W when mounted on a minimum pad. b)

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F D N 8 6 2 4 6 N -C h a n n e l P o w e rT re n c h ® M O S F E T ©2010 Fairchild Semiconductor Corporation FDN86246 Rev.C www.fairchildsemi.com3 Typical Characteristics TJ = 25 °C unless otherwise noted Figure 1. 0 1 2 3 4 5 0 1 2 3 4 5 6 VGS = 5.5 V VGS = 10 V VGS = 6 V VGS = 5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 7 V I D , D R A IN C U R R E N T ( A ) V DS , DRAIN TO SOURCE VOLTAGE (V) On-Region Characteristics Figure 2. 0 1 2 3 4 5 6 0 1 2 3 4 5 VGS = 5 V VGS = 7 V N O R M A L IZ E D D R A IN T O S O U R C E O N -R E S IS T A N C E ID, DRAIN CURRENT (A) VGS = 10 V VGS = 6 V VGS = 5.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX Normalized On-Resistance vs Drain Current and Gate Voltage Figure 3. Normalized On- Resistance -75 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 ID = 1.6 A VGS = 10 V N O R M A L IZ E D D R A IN T O S O U R C E O N -R E S IS T A N C E TJ, JUNCTION TEMPERATURE (oC) vs Junction Temperature Figure 4. 4 5 6 7 8 9 10 0 200 400 600 800 TJ = 125 oC ID = 1.6 A TJ = 25 oC VGS, GATE TO SOURCE VOLTAGE (V) r D S (o n ), D R A IN T O S O U R C E O N -R E S IS T A N C E ( m  ) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX On-Resistance vs Gate to Source Voltage Figure 5. Transfer Characteristics 2 3 4 5 6 7 0 1 2 3 4 5 6 TJ = 150 oC VDS = 5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX TJ = -55 oC TJ = 25 oC I D , D R A IN C U R R E N T ( A ) VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 TJ = -55 oC TJ = 25 oC TJ = 150 oC VGS = 0 V I S , R E V E R S E D R A IN C U R R E N T ( A ) VSD, BODY DIODE FORWARD VOLTAGE (V) Source to Drain Diode Forward Voltage vs Source Current

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F D N 8 6 2 4 6 N -C h a n n e l P o w e rT re n c h ® M O S F E T ©2010 Fairchild Semiconductor Corporation FDN86246 Rev.C www.fairchildsemi.com4 Figure 7. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 ID = 1.6 A VDD = 75 V VDD = 50 V V G S , G A T E T O S O U R C E V O L T A G E ( V ) Qg, GATE CHARGE (nC) VDD = 100 V Gate Charge Characteristics Figure 8. 0.1 1 10 100 1 10 100 300 f = 1 MHz VGS = 0 V C A P A C IT A N C E ( p F ) VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss Capacitance vs Drain to Source Voltage Figure 9. 0.01 0.1 1 1.0 1.5 2.0 2.5 3.0 3.5 TJ = 100 oC TJ = 25 oC TJ = 125 oC t AV , TIME IN AVALANCHE (ms) I A S , A V A L A N C H E C U R R E N T ( A ) Unclamped Inductive Switching Capability Figure 10. 0.1 1 10 100 500 0.001 0.01 0.1 1 10 10 s 100 us 10 ms DC 1 s 100 ms 1 ms I D , D R A IN C U R R E N T ( A ) VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED RJA = 180 o C/W TA = 25 o C Forward Bias Safe Operating Area Figure 11. Single Pulse Maximum Power Dissipation 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 0.5 1 10 100 200 P (P K ), P E A K T R A N S IE N T P O W E R ( W ) SINGLE PULSE RJA = 180 o C/W T A = 25 o C t, PULSE WIDTH (sec) Typical Characteristics TJ = 25 °C unless otherwise noted

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F D N 8 6 2 4 6 N -C h a n n e l P o w e rT re n c h ® M O S F E T ©2010 Fairchild Semiconductor Corporation FDN86246 Rev.C www.fairchildsemi.com5 Figure 12. Junction-to-Ambient Transient Thermal Response Curve 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 0.001 0.01 0.1 1 2 SINGLE PULSE RJA = 180 o C/W DUTY CYCLE-DESCENDING ORDER N O R M A L IZ E D T H E R M A L IM P E D A N C E , Z J A t, RECTANGULAR PULSE DURATION (sec) D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA Typical Characteristics TJ = 25 °C unless otherwise noted

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©2010 Fairchild Semiconductor Corporation FDN86246 Rev.C www.fairchildsemi.com6 F D N 8 6 2 4 6 N -C h a n n e l P o w e rT re n c h ® M O S F E T TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter® * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ OptiHiT™ OPTOLOGIC® OPTOPLANAR® ® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ ®* The Power Franchise® The Right Technology for Your Success™ ® TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* SerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ tm ® tm tm Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev. I51 ™

FDN86246 Reviews

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Ains*****Dhar

September 5, 2019

Awesome buying experience, smooth transmission with the seller, and fast delivery.

Dulc*****nkar

September 5, 2019

Order arrived to Estonia in 3 days. Item as described. Well packed.

Rache*****nandez

July 17, 2019

Used this on starter solenoid and works as expected.

Yahy*****aham

May 26, 2019

To be honest, you're beating your competitor on delivery - sometimes I request 2nd day and you still get it here overnight. Thanks!

Khar*****stogi

May 8, 2019

Went well this time Now have the IC and very pleased.

Hen*****Davis

April 17, 2019

Replaced a diode in my distortion pedal. Sounds different (lower growl) but in a good way...LOL!

Syla*****amer

December 7, 2018

Great seller, would recommend buying from. , good communication and problem solving

Rhea*****ritt

November 6, 2018

Good seller, incredible reliable.Item as described. Very professional

Prin*****rost

July 26, 2018

Absolutely the best source for wire, connectors, terminal strips, panel lights, etc. for model railroaders. Web site is the best in the business.

Shep***** Craig

June 13, 2018

To be honest, I think you are doing an outstanding job.

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