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FDP8441

hot FDP8441

FDP8441

For Reference Only

Part Number FDP8441
Manufacturer Fairchild/ON Semiconductor
Description MOSFET N-CH 40V 80A TO-220AB
Datasheet FDP8441 Datasheet
Package TO-220-3
In Stock 93930 piece(s)
Unit Price $ 3.92 *
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FDP8441

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FDP8441 Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FDP8441 Datasheet
PackageTO-220-3
SeriesPowerTrench?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25��C23A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs280nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds15000pF @ 25V
Vgs (Max)��20V
Power Dissipation (Max)300W (Tc)
Rds On (Max) @ Id, Vgs2.7 mOhm @ 80A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

FDP8441 Datasheet

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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

Page 3

FDP8441 Rev. C0 ©2012 Fairchild Semiconductor Corporation F D P 8441 N -C h an n el P o w erT ren ch ® M O S F E T www.fairchildsemi.com1 FDP8441 N-Channel PowerTrench® MOSFET 40V, 80A, 2.7mΩ Features Typ rDS(on) = 2.1mΩ at VGS = 10V, ID = 80A Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) RoHS Compliant Applications Solenoid and Motor Drivers Distributed Power Architectures and VRMs December 2012

Page 4

FDP8441 Rev. C0 F D P 8441 N -C h an n el P o w erT ren ch ® M O S F E T www.fairchildsemi.com2 Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 - - V IDSS Zero Gate Voltage Drain Current VDS = 32V VGS = 0V - - 1 µA TJ = 150°C - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250µA 2 2.8 4 V r on) Drain to Source On Resistance ID = 80A, VGS = 10V - 2.1 2.7 mΩID = 80A, VGS = 10V, TJ = 175°C - 3.6 4.7 Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 15000 - pF Coss Output Capacitance - 1250 - pF Crss Reverse Transfer Capacitance - 685 - pF RG Gate Resistance VGS = 0.5V, f = 1MHz - 1.1 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V VDD = 20V ID = 35A Ig = 1mA - 215 280 nC Qg(TH) Threshold Gate Charge VGS = 0 to 2V - 29 38 nC Qgs Gate to Source Gate Charge - 60 - nC Qgs2 Gate Charge Threshold to Plateau - 32 - nC Qgd Gate to Drain “Miller” Charge - 49 - nC DS( MOSFET Maximum Ratings TC = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V ID Drain Current Continuous (TC < 160 oC, VGS = 10V) 80 AContinuous (Tamb = 25 oC, VGS = 10V, with RθJA = 62 oC/W) 23 Pulsed See Figure 4 EAS Single Pulse Avalanche Energy (Note 1) 947 mJ PD Power dissipation 300 W Derate above 25oC 2 W/oC TJ, TSTG Operating and Storage Temperature -55 to 175 oC RθJC Thermal Resistance Junction to Case 0.5 oC/W RθJA Thermal Resistance Junction to Ambient (Note 2) 62 oC/W Device Marking Device Package Reel Size Tape Width Quantity FDP8441 FDP8441 TO-220AB Tube N/A 50 units

Page 5

F D P 8441 N -C h an n el P o w erT ren ch ® M O S F E T www.fairchildsemi.com3 Electrical Characteristics TJ = 25°C unless otherwise noted Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units t(on) Turn-On Time VDD = 20V, ID = 35A VGS = 10V, RGS = 1.5Ω - - 77 ns td(on) Turn-On Delay Time - 23 - ns tr Turn-On Rise Time - 24 - ns td(off) Turn-Off Delay Time - 75 - ns tf Turn-Off Fall Time - 17.9 - ns toff Turn-Off Time - - 147 ns VSD Source to Drain Diode Voltage ISD = 35A - 0.8 1.25 V ISD = 15A - 0.8 1.0 V trr Reverse Recovery Time IF = 35A, di/dt = 100A/µs - 52 68 ns Qrr Reverse Recovery Charge IF = 35A, di/dt = 100A/µs - 76 99 nC Notes: 1: Starting TJ = 25 oC, L = 0.46mH, IAS = 64A. 2: Pulse width = 100s. FDP8441 Rev. C0

Page 6

F D P 8441 N -C h an n el P o w erT ren ch ® M O S F E T www.fairchildsemi.com4 Typical Characteristics Figure 1. Normalized Power Dissipation vs Case Temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 P O W E R D IS S IP A T IO N M U L IP L IE R TC, CASE TEMPERATURE(oC) Figure 2. 25 50 75 100 125 150 175 0 50 100 150 200 250 300 TC, CASE TEMPERATURE(oC) I D , D R A IN C U R R E N T ( A ) V GS = 10VCURRENT LIMITED BY PACKAGE Maximum Continuous Drain Current vs Case Temperature Figure 3. 10-5 10-4 10-3 10-2 10-1 100 101 1E-3 0.01 0.1 1 SINGLE PULSE D = 0.50 0.20 0.10 0.05 0.02 0.01 N O R M A L IZ E D T H E R M A L IM P E D A N C E , Z θ J C t, RECTANGULAR PULSE DURATION(s) DUTY CYCLE - DESCENDING ORDER 2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC PDM t1 t2 Normalized Maximum Transient Thermal Impedance Figure 4. Peak Current Capability 10-5 10-4 10-3 10-2 10-1 100 101 10 100 1000 10000 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION VGS = 10V SINGLE PULSE I D M , P E A K C U R R E N T ( A ) t, RECTANGULAR PULSE DURATION(s) TC = 25 oC I = I25 175 - TC 150 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: FDP8441 Rev. C0

Page 7

F D P 8441 N -C h an n el P o w erT ren ch ® M O S F E T www.fairchildsemi.com5 Figure 5. 1 10 100 0.1 1 10 100 1000 LIMITED BY PACKAGE 10us 100us 1ms 10ms I D , D R A IN C U R R E N T ( A ) VDS, DRAIN TO SOURCE VOLTAGE (V) OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TC = 25 oC DC 4000 Forward Bias Safe Operating Area 0.01 0.1 1 10 100 1000 1 10 100 500 STARTING TJ = 150 o C STARTING TJ = 25 o C I A S , A V A L A N C H E C U R R E N T ( A ) tAV, TIME IN AVALANCHE (ms) 5000 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R = 0 If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability Figure 7. 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 40 80 120 160 TJ = -55 oC TJ = 25 oC TJ = 175 oC PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 5V I D , D R A IN C U R R E N T ( A ) VGS, GATE TO SOURCE VOLTAGE (V) Transfer Characteristics Figure 8. 0 1 2 3 4 0 40 80 120 160 I D , D R A IN C U R R E N T ( A ) VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V VGS = 5V VGS = 4.5V VGS = 3.5V VGS = 4V Saturation Characteristics Figure 9. 3 4 5 6 7 8 9 10 0 10 20 30 40 50 r D S (o n ), D R A IN T O S O U R C E O N -R E S IS T A N C E ( m Ω ) VGS, GATE TO SOURCE VOLTAGE (V) TJ = 25 oC TJ = 175 oC PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX Drain to Source On-Resistance Variation vs Gate to Source Voltage Figure 10. -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 TJ, JUNCTION TEMPERATURE(oC) N O R M A L IZ E D D R A IN T O S O U R C E O N -R E S IS T A N C E ID = 80A VGS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX Normalized Drain to Source On Resistance vs Junction Temperature Typical Characteristics FDP8441 Rev. C0

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F D P 8441 N -C h an n el P o w erT ren ch ® M O S F E T www.fairchildsemi.com6 Figure 11. -80 -40 0 40 80 120 160 200 0.4 0.6 0.8 1.0 1.2 N O R M A L IZ E D G A T E T H R E S H O L D V O L T A G E TJ, JUNCTION TEMPERATURE(oC) VGS = VDS ID = 250µA Normalized Gate Threshold Voltage vs Junction Temperature Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature -80 -40 0 40 80 120 160 200 0.90 0.95 1.00 1.05 1.10 1.15 TJ, JUNCTION TEMPERATURE (oC) N O R M A L IZ E D D R A IN T O S O U R C E B R E A K D O W N V O L T A G E ID = 250µA Figure 13. 0.1 1 10 100 1000 10000 f = 1MHz VGS = 0V Crss Coss Ciss C A P A C IT A N C E ( p F ) VDS, DRAIN TO SOURCE VOLTAGE (V) 50 40000 Capacitance vs Drain to Source Voltage Figure 14. 0 50 100 150 200 250 0 2 4 6 8 10 ID = 80A VDD = 20V VDD = 15V VDD = 25V V G S , G A T E T O S O U R C E V O L T A G E (V ) Qg, GATE CHARGE(nC) Gate Charge vs Gate to Source Voltage Typical Characteristics FDP8441 Rev. C0

Page 9

7FDP8441 Rev. C0 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms 2Cool™ AccuPower™ AX-CAP™* BitSiC® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter® * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green Bridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptoHiT™ OPTOLOGIC® OPTOPLANAR® PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM® STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ ®* The Power Franchise® ® TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC® TriFault Detect™ TRUECURRENT®* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ ® ™ tm Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev. I61 tm ® F D P 8441 N -C h an n el P o w erT ren ch ® M O S F E T

FDP8441 Reviews

Average User Rating
5 / 5 (173)
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5 ★
156
4 ★
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1 ★
0

Nico*****Narain

September 16, 2019

Easy transaction. Very pleased with goods in perfect condition would recommend Heisener company.

Rosema*****istensen

August 26, 2019

Perfectly functioning!! on time and as described!

Yous*****icks

July 25, 2019

Every time I order, I get it correctly filled and faster than most of website. For a friendly use operate system, you guys are the best!

Madil*****llison

April 16, 2019

Very effective shopping path, service steady as a rock, keep up the great work.

Cal*****Pace

April 14, 2019

Used for a solar project. Working as hoped. I'd buy again.

Ab***** Lee

January 14, 2019

Absolutely awesome, quick delivery, perfect product exactly as described!

Tris*****Munshi

December 23, 2018

Perfect, functional, arrived a weeks earlier, excellent Seller. Recommended

Phoe*****aton

December 8, 2018

Went well this time Now have the IC and very pleased.

Sabr*****Lynch

June 24, 2018

Competitively priced set of diodes, tested as described. Quality is about what you would expect for no- or off-brand.

Xiom*****Amble

June 22, 2018

Awesome components selection and availability. Ordering process is easy. They don't spam me after the purchase.

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