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hot FDPF2710T


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Part Number FDPF2710T
Manufacturer Fairchild/ON Semiconductor
Description MOSFET N-CH 250V 25A TO-220F
Datasheet FDPF2710T Datasheet
Package TO-220-3 Full Pack
In Stock 10066 piece(s)
Unit Price $ 4.82 *
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FDPF2710T Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FDPF2710T Datasheet
PackageTO-220-3 Full Pack
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25��C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs101nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds7280pF @ 25V
Vgs (Max)��30V
Power Dissipation (Max)62.5W (Tc)
Rds On (Max) @ Id, Vgs42.5 mOhm @ 25A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

FDPF2710T Datasheet

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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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FD PF2710T — N -C hannel Pow erTrench ® M O SFET ©2007 Fairchild Semiconductor Corporation FDPF2710T Rev. C3 Thermal Resistance, Junction-to-Ambient, Max. Thermal Resistance, Junction-to-Case, Max. FDPF2710T • Consumer Appliances • High Power and Current Handling Capability • High Performance Trench Technology for Extremely Low R • Low Gate Charge • Fast Switching Speed 1 www.fairchildsemi.com Absolute Maximum Ratings Thermal Characteristics Symbol Parameter Unit VDS Drain-Source Voltage 250 V VGS Gate-Source voltage ± 30 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 25 18.8 A A IDM Drain Current - Pulsed (Note 1) 100 A EAS Single Pulsed Avalanche Energy (Note 2) 145 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Derate above 25°C 62.5 0.5 W W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter RθJC 2.0 °C/W RθJA 62.5 °C/W FDPF2710T N-Channel PowerTrench® MOSFET 250 V, 25 A, 42.5 mΩ • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintain- ing superior switching performance. Applications • Synchronous Rectification DS(on) UnitFDPF2710T • RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A October 2013 TO-220F G DS G S D Features

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(Note 4) 4. Essentially Independent of Operating Temperature Typical Characteristics Min Typ Max Unit 2 Package Marking and Ordering Information Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 50A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C Device Marking Device Package Reel Size Tape Width Quantity FDPF2710T FDPF2710T TO-220F Tube N/A 50 units Symbol Parameter Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 250 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.25 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V VDS = 250V, VGS = 0V,TC = 125°C -- -- -- -- 10 500 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 3.9 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 25A -- 36.3 42.5 mΩ gFS Forward Transconductance VDS = 10V, ID = 25A -- 63 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 5470 7280 pF Coss Output Capacitance -- 426 567 pF Crss Reverse Transfer Capacitance -- 97 146 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 125V, ID = 50A VGS = 10V, RGEN = 25Ω -- 80 170 ns tr Turn-On Rise Time -- 252 514 ns td(off) Turn-Off Delay Time -- 112 234 ns tf Turn-Off Fall Time -- 154 318 ns Qg Total Gate Charge VDS = 125V, ID = 50A VGS = 10V -- 78 101 nC Qgs Gate-Source Charge -- 34 -- nC Qgd Gate-Drain Charge -- 18 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 25 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 150 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 25A -- -- 1.2 V trr Reverse Recovery Time VGS = 0V, IS = 50A dIF/dt =130A/µs -- 163 -- ns Qrr Reverse Recovery Charge -- 1.3 -- µC (Note 4) FD PF2710T — N -C hannel Pow erTrench ® M O SFET ©2007 Fairchild Semiconductor Corporation FDPF2710T Rev. C3 www.fairchildsemi.com

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3 Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperatue Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 0.1 1 10 1 10 100 * Notes : 1. 250µs Pulse Test 2. TC = 25 oC VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V I D ,D ra in C ur re nt [A ] VDS,Drain-Source Voltage[V] 500 4 6 8 10 1 10 100 -55oC 150oC * Notes : 1. VDS = 20V 2. 250µs Pulse Test 25oC I D ,D ra in C ur re nt [A ] VGS,Gate-Source Voltage[V] 250 0 25 50 75 100 125 150 0.02 0.03 0.04 0.05 0.06 0.07 * Note : TJ = 25 oC VGS = 20V VGS = 10V R D S( O N ) [ Ω ], D ra in -S ou rc e O n- R es is ta nc e ID, Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 TA = 150 oC I S , R ev er se D ra in C ur re nt [A ] VSD, Body Diode Forward Voltage [V] TA = 25 oC 150 * Notes : 1. VGS=0V 2. 250µs Pulse Test 10-1 100 101 0 3000 6000 9000 Coss Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd * Note: 1. VGS = 0V 2. f = 1MHzCrss C ap ac ita nc es [p F] VDS, Drain-Source Voltage [V] 30 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 * Note : ID = 50A VDS = 50V VDS = 125V VDS = 200V V G S, G at e- S o ur ce V ol ta ge [V ] Qg, Total Gate Charge [nC] FD PF2710T — N -C hannel Pow erTrench ® M O SFET ©2007 Fairchild Semiconductor Corporation FDPF2710T Rev. C3 www.fairchildsemi.com

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4 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 11. Transient Thermal Response Curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * Notes : 1. VGS = 0V 2. ID = 250µA B V D SS , [ N or m al iz ed ] D ra in -S ou rc e B re ak do w n Vo lta ge TJ, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0 1 2 * Notes : 1. VGS = 10V 2. ID = 25A r D S( on ), [ N o r m al iz ed ] D ra in -S ou rc e O n- R es is ta nc e TJ, Junction Temperature [ oC] 2.5 25 50 75 100 125 150 0 10 20 30 I D , D ra in C ur re nt [A ] TC, Case Temperature [ oC] 10-5 10-4 10-3 10-2 10-1 100 101 102 10-3 10-2 10-1 100 0.01 0.1 0.2 0.05 0.02 * Notes : 1. ZθJC(t) = 2.0 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.5 Single pulseTh er m al R es po ns e [ Z θ JC ] Rectangular Pulse Duration [sec] t1 PDM t2 0.1 1 10 100 300 0.01 0.1 1 10 100 200 100μs 1ms 10ms 100ms I D , D ra in C ur re nt [A ] VDS, Drain-Source Voltage [V] Operation in This Area is Limited by R DS(on) SINGLE PULSE TC = 25 oC TJ = 150 oC RθJC = 2.0 oC/W DC FD PF2710T — N -C hannel Pow erTrench ® M O SFET ©2007 Fairchild Semiconductor Corporation FDPF2710T Rev. C3 www.fairchildsemi.com

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5 Figure 12. Gate Charge Test Circuit & Waveform Figure 13. Resistive Switching Test Circuit & Waveforms Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms VGS VDS 10% 90% td(on) tr t on t off td(off) tf VDD VDS RL DUT RG VGS V10VGS Charge VGS 10V Qg Qgs Qgd IG = const.3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT =EAS - - L ASI 1-- 2 BVDSS 2 -------------------- BVDSS - VDD VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time DUT RG L I D t p V10VGS FD PF2710T — N -C hannel Pow erTrench ® M O SFET ©2007 Fairchild Semiconductor Corporation FDPF2710T Rev. C3 www.fairchildsemi.com

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6 Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms • DUT VDS + _ Driver RG Same Type as DUT VGS • dv/dt controlled by RG ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current IRM Body Diode Reverse Current Body Diode Recovery dv/dt di/dt D = -- Gate --------- Puls -------- e Wid ----- th Gate Pulse Period - - FD PF2710T — N -C hannel Pow erTrench ® M O SFET ©2007 Fairchild Semiconductor Corporation FDPF2710T Rev. C3 www.fairchildsemi.com

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7 Mechanical Dimensions Dimension in Millimeters TO-220F 3L Figure 16. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 FD PF2710T — N -C hannel Pow erTrench ® M O SFET ©2007 Fairchild Semiconductor Corporation FDPF2710T Rev. C3 www.fairchildsemi.com

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8 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms AccuPower™ AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET® Global Power ResourceSM GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ mWSaver® OptoHiT™ OPTOLOGIC® OPTOPLANAR® PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM® STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ ®* TinyBoost® TinyBuck® TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT®* SerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ ® ™ Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev. I66 tm ® FD PF2710T — N -C hannel Pow erTrench ® M O SFET ©2007 Fairchild Semiconductor Corporation FDPF2710T Rev. C3 www.fairchildsemi.com

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