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FDPF2710T

hot FDPF2710T

FDPF2710T

For Reference Only

Part Number FDPF2710T
Manufacturer Fairchild/ON Semiconductor
Description MOSFET N-CH 250V 25A TO-220F
Datasheet FDPF2710T Datasheet
Package TO-220-3 Full Pack
In Stock 10066
Quota Limit No Limit
Lead Time Can Ship Immediately
Estimated Delivery Time Jul 26 - Jul 31 (Choose Expedited Shipping)

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FDPF2710T

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FDPF2710T Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FDPF2710T Datasheet
PackageTO-220-3 Full Pack
SeriesPowerTrench?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25��C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs101nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds7280pF @ 25V
Vgs (Max)��30V
Power Dissipation (Max)62.5W (Tc)
Rds On (Max) @ Id, Vgs42.5 mOhm @ 25A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

FDPF2710T Datasheet

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hotFDPF2710T FDP047AN08A0 Fairchild/ON Semiconductor, MOSFET N-CH 75V 80A TO-220AB, Package:TO-220-3, Series:PowerTrench? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):250V, Current - Continuous Drain (Id) @ 25��C:25A (Tc), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs(th) (Max) @ Id:5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:101nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds:7280pF @ 25V, Vgs (Max):��30V, Power Dissipation (Max):62.5W (Tc), Rds On (Max) @ Id, Vgs:42.5 mOhm @ 25A, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-220F, Package / Case:TO-220-3 Full Pack
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hotFDPF2710T FDP120N10 Fairchild/ON Semiconductor, MOSFET N-CH 100V 74A TO-220, Package:TO-220-3, Series:PowerTrench? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):250V, Current - Continuous Drain (Id) @ 25��C:25A (Tc), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs(th) (Max) @ Id:5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:101nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds:7280pF @ 25V, Vgs (Max):��30V, Power Dissipation (Max):62.5W (Tc), Rds On (Max) @ Id, Vgs:42.5 mOhm @ 25A, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-220F, Package / Case:TO-220-3 Full Pack
hotFDPF2710T FDP3632 Fairchild/ON Semiconductor, MOSFET N-CH 100V 80A TO-220AB, Package:TO-220-3, Series:PowerTrench? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):250V, Current - Continuous Drain (Id) @ 25��C:25A (Tc), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs(th) (Max) @ Id:5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:101nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds:7280pF @ 25V, Vgs (Max):��30V, Power Dissipation (Max):62.5W (Tc), Rds On (Max) @ Id, Vgs:42.5 mOhm @ 25A, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-220F, Package / Case:TO-220-3 Full Pack
hotFDPF2710T FDPF18N50 Fairchild/ON Semiconductor, MOSFET N-CH 500V 18A TO-220F, Package:TO-220-3 Full Pack, Series:PowerTrench? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):250V, Current - Continuous Drain (Id) @ 25��C:25A (Tc), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs(th) (Max) @ Id:5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:101nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds:7280pF @ 25V, Vgs (Max):��30V, Power Dissipation (Max):62.5W (Tc), Rds On (Max) @ Id, Vgs:42.5 mOhm @ 25A, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:TO-220F, Package / Case:TO-220-3 Full Pack

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