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FDS6673BZ

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FDS6673BZ

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Part Number FDS6673BZ
Manufacturer Fairchild/ON Semiconductor
Description MOSFET P-CH 30V 14.5A 8-SOIC
Datasheet FDS6673BZ Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 44,076 piece(s)
Unit Price $ 0.5687 *
Lead Time Can Ship Immediately
Estimated Delivery Time Dec 2 - Dec 7 (Choose Expedited Shipping)
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Part Number # FDS6673BZ (Transistors - FETs, MOSFETs - Single) is manufactured by Fairchild/ON Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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FDS6673BZ Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FDS6673BZDatasheet
Package8-SOIC (0.154", 3.90mm Width)
SeriesPowerTrench?
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C14.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs124nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds4700pF @ 15V
Vgs (Max)��25V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Rds On (Max) @ Id, Vgs7.8 mOhm @ 14.5A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

FDS6673BZ Datasheet

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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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F D S 6 6 7 3 B Z P -C h a n n e l P o w e rT re n c h ® M O S F E T ©2009 Fairchild Semiconductor Corporation FDS6673BZ Rev. B2 www.fairchildsemi.com1 FDS6673BZ P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8m General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features Max rDS(on) = 7.8m VGS = -10V, ID = -14.5A Max rDS(on) = 12m VGS = -4.5V, ID = -12A Extended VGS range (-25V) for battery applications HBM ESD protection level of 6.5kV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS compliant 1 7 5 2 8 4 6 3 S D S S SO-8 D D D G MOSFET Maximum Ratings TA = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage -30 V VGS Gate to Source Voltage ±25 V ID Drain Current -Continuous (Note1a) -14.5 A -Pulsed -75 A PD Power Dissipation for Single Operation (Note1a) 2.5 W (Note1b) 1.2 (Note1c) 1.0 TJ, TSTG Operating and Storage Temperature -55 to 150 °C R JA Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W R JC Thermal Resistance , Junction to Case (Note 1) 25 °C/W Device Marking Device Reel Size Tape Width Quantity FDS6673BZ FDS6673BZ 13’’ 12mm 2500 units March 2009

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F D S 6 6 7 3 B Z P -C h a n n e l P o w e rT re n c h ® M O S F E T FDS6673BZ Rev. B2 www.fairchildsemi.com2 Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 A, VGS = 0V -30 V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = -250 A, referenced to 25°C -20 mV/°C IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS = 0V -1 A IGSS Gate to Source Leakage Current VGS = ±25V, VDS = 0V ±10 A On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 A -1 -1.9 -3 V VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 A, referenced to 25°C 8.1 mV/°C rDS(on) Drain to Source On Resistance VGS = -10V , ID = -14.5A 6.5 7.8 m VGS = -4.5V, ID = -12A 9.6 12 VGS = -10V, ID = -14.5A TJ = 125 oC 9.7 12 gFS Forward Transconductance VDS = -5V, ID = -14.5A 60 S (Note 2) Dynamic Characteristics Ciss Input Capacitance VDS = -15V, VGS = 0V, f = 1.0MHz 3500 4700 pF Coss Output Capacitance 600 800 pF Crss Reverse Transfer Capacitance 600 900 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -15V, ID = -1A VGS = -10V, RGS = 6 14 26 ns tr Rise Time 16 29 ns td(off) Turn-Off Delay Time 225 36 ns tf Fall Time 105 167 ns Qg Total Gate Charge VDS = -15V, VGS = -10V, ID = -14.5A 88 124 nC Qg Total Gate Charge VDS = -15V, VGS = -5V, ID = -14.5A 46 65 nC Qgs Gate to Source Gate Charge 8 nC Qgd Gate to Drain Charge 23.5 nC (Note 2) Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A -0.7 -1.2 V trr Reverse Recovery Time IF = 14.5A, di/dt = 100A/ s 45 ns Qrr Reverse Recovery Charge IF = 14.5A, di/dt = 100A/ s 34 nC Notes: 1: R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R CA is determined by the user’s board design. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. a) 50 oC/W (10 sec) when mounted on a 1 in2 pad of 2 oz copper b) 105 oC/W when mounted on a .04 in2 pad of 2 oz copper c) 125 oC/W when mounted on a minimun pad

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F D S 6 6 7 3 B Z P -C h a n n e l P o w e rT re n c h ® M O S F E T FDS6673BZ Rev. B2 www.fairchildsemi.com3 Typical Characteristics TJ = 25°C unless otherwise noted Figure 1. On Region Characteristics 0 1 2 3 4 0 10 20 30 40 50 60 70 80 PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX VGS = -5V VGS = -4V VGS = -3V VGS = -3.5V VGS = -4.5V VGS = -10V -I D , D R A IN C U R R E N T ( A ) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 2. 10 20 30 40 50 60 70 80 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 VGS = -10V VGS = -5V VGS = -4.5V VGS = -3.5V VGS = -4V PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX N O R M A L IZ E D D R A IN T O S O U R C E O N -R E S IS T A N C E -ID, DRAIN CURRENT(A) Normalized On-Resistance vs Drain Current and Gate Voltage Figure 3. -80 -40 0 40 80 120 160 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 T J , JUNCTION TEMPERATURE ( o C) N O R M A L IZ E D D R A IN T O S O U R C E O N -R E S IS T A N C E ID = -14.5A V GS = -10V Normalized On Resistance vs Junction Temperature Figure 4. 2 4 6 8 10 0 5 10 15 20 25 r D S (o n ), D R A IN T O S O U R C E O N -R E S IS T A N C E ( m ) -V GS , GATE TO SOURCE VOLTAGE (V) T J = 25oC T J = 150oC ID = -7A PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX On-Resistance vs Gate to Source Voltage Figure 5. Transfer Characteristics 2.0 2.5 3.0 3.5 4.0 4.5 0 20 40 60 80 TJ = -55 oC TJ = 25 oC TJ = 150 oC PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VDS = -6V -I D , D R A IN C U R R E N T ( A ) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1E-3 0.01 0.1 1 10 100 TJ = -55 oC TJ = 25 oC TJ = 150 oC VGS = 0V -I S , R E V E R S E D R A IN C U R R E N T ( A ) -VSD, BODY DIODE FORWARD VOLTAGE (V) Source to Drain Diode Forward Voltage vs Source Current

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F D S 6 6 7 3 B Z P -C h a n n e l P o w e rT re n c h ® M O S F E T FDS6673BZ Rev. B2 www.fairchildsemi.com4 Figure 7. 0 20 40 60 80 100 0 2 4 6 8 10 VDD = -20V VDD = -10V -V G S , G A T E T O S O U R C E V O L T A G E (V ) Qg, GATE CHARGE(nC) VDD = -15V Gate Charge Characteristics Figure 8. 0.1 1 10 100 1000 30 f = 1MHz VGS = 0V C A P A C IT A N C E ( p F ) -VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss 6000 Capacitance vs Drain to Source Voltage Figure 9. 0 5 10 15 20 25 30 35 1E-4 1E-3 0.01 0.1 1 10 100 1000 TJ = 150 oC TJ = 25 oC -I g (u A ) -V GS (V) Ig vs VGS Figure 10. 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 TJ = 125 oC TJ = 25 oC -I A S , A V A L A N C H E C U R R E N T (A ) 40 t AV , TIME IN AVALANCHE(ms) Unclamped Inductive Switching Capability Figure 11. 25 50 75 100 125 150 0 4 8 12 16 VGS = -10V VGS = -4.5V -I D , D R A IN C U R R E N T ( A ) TA, AMBIENT TEMPERATURE(oC) Maximum Continuous Drain Current vs Ambient Temperature Figure 12. Forward Bias Safe Operating Area Typical Characteristics TJ = 25°C unless otherwise noted 0.01 0.1 1 10 100 500 0.01 0.1 1 10 100 100 s 1s 10s DC 100 ms 10 ms 1ms -I D , D R A IN C U R R EN T (A ) -VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED R JA = 125 oC/W TC = 25 oC

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Figure 13. Single Pulse Maximum Power Dissipation Figure 14. Junction-to-Ambient Transient Thermal Response Curve Typical Characteristics TJ = 25 °C unless otherwise noted 10-4 10-3 10-2 10-1 1 10 102 103 0.5 1 10 102 103 104 SINGLE PULSE R JA = 125 oC/W TA = 25 oC VGS = -10V P( PK ), PE A K T R A N SI EN T PO W ER (W ) t, PULSE WIDTH (sec) 10-4 10-3 10-2 10-1 1 10 102 103 1E-4 1E-3 0.01 0.1 1 SINGLE PULSE R JA = 125 oC/W DUTY CYCLE-DESCENDING ORDER N O R M A LI ZE D T H ER M A L IM PE D A N C E, Z J A t, RECTANGULAR PULSE DURATION (sec) D = 0.5 0.2 0.1 0.05 0.02 0.01 2 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z JA x R JA + TA F D S 6 6 7 3 B Z P -C h a n n e l P o w e rT re n c h ® M O S F E T FDS6673BZ Rev. B2 www.fairchildsemi.com5

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Rev. I39 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* SerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ tm ® tm tm Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. F D S 6 6 7 3 B Z P -C h a n n e l P o w e rT re n c h ® M O S F E T FDS6673BZ Rev. B2 www.fairchildsemi.com 6

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