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FDS86267P

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FDS86267P

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Part Number FDS86267P
Manufacturer Fairchild/ON Semiconductor
Description MOSFET P-CH 150V
Datasheet FDS86267P Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 6,930 piece(s)
Unit Price $ 0.6528 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 25 - Jan 30 (Choose Expedited Shipping)
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Part Number # FDS86267P (Transistors - FETs, MOSFETs - Single) is manufactured by Fairchild/ON Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For FDS86267P specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add FDS86267P with quantity into BOM. Heisener.com does NOT require any registration to request a quote of FDS86267P.

FDS86267P Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FDS86267PDatasheet
Package8-SOIC (0.154", 3.90mm Width)
SeriesPowerTrench?
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1130pF @ 75V
Vgs (Max)��25V
FET Feature-
Power Dissipation (Max)1W (Ta)
Rds On (Max) @ Id, Vgs255 mOhm @ 2.2A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

FDS86267P Datasheet

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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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May 2015 ©2015 Fairchild Semiconductor Corporation FDS86267P Rev 1.0 www.fairchildsemi.com1 F D S 8 6267P P -C h an n el S h ield ed G ate P o w erT ren ch ® M O S F E TSO-8 D D D D S S S G Pin 1 G S S S D D D D 4 3 2 1 5 6 7 8 FDS86267P P-Channel Shielded Gate PowerTrench® MOSFET -150 V, -2.2 A, 255 mΩ Features Shielded Gate MOSFET Technology Max rDS(on) = 255 mΩ at VGS = -10 V, ID = -2.2 A Max rDS(on) = 290 mΩ at VGS = -6 V, ID = -2 A Very Low rDS(on) Mid Voltage P-channel Silicon Technology Optimised for Low Qg This Product is Optimised for Fast Switching Applications as well as Load Switch Applications 100% UIL Tested RoHS Compliant General Description This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates shielded gate technology. The process has been optimized for the on-state resistance and yet maintain superior switching performance. Applications Active Clamp Switch Load Switch MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage -150 V VGS Gate to Source Voltage ±25 V ID Drain Current -Continuous (Note 1a) -2.2 A -Pulsed (Note 4) -34 EAS Single Pulse Avalanche Energy (Note 3) 54 mJ PD Power Dissipation TA = 25 °C (Note 1a) 2.5 W Power Dissipation TA = 25 °C (Note 1b) 1.0 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1b) 125 Device Marking Device Package Reel Size Tape Width Quantity FDS86267P FDS86267P SO-8 13 ’’ 12 mm 2500 units

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www.fairchildsemi.com2©2015 Fairchild Semiconductor Corporation FDS86267P Rev 1.0 F D S 8 6267P P -C h an n el S h ield ed G ate P o w erT ren ch ® M O S F E T Electrical Characteristics TJ = 25 °C unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -150 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C -121 mV/°C IDSS Zero Gate Voltage Drain Current VDS = -120 V, VGS = 0 V -1 μA IGSS Gate to Source Leakage Current VGS = ±25 V, VDS = 0 V ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA -2 -3 -4 V ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C 5 mV/°C rDS(on) Static Drain to Source On Resistance VGS = -10 V, ID = -2.2 A 191 255 mΩVGS = -6 V, ID = -2 A 214 290 VGS = -10 V, ID = -2.2 A,TJ = 125 °C 342 448 gFS Forward Transconductance VDS = -10 V, ID = -2.2 A 6.8 S Ciss Input Capacitance VDS = -75 V, VGS = 0 V, f = 1 MHz 806 1130 pF Coss Output Capacitance 54 75 pF Crss Reverse Transfer Capacitance 1.6 2.3 pF Rg Gate Resistance 0.1 3 6 Ω td(on) Turn-On Delay Time VDD = -75 V, ID = -2.2 A, VGS = -10 V, RGEN = 6 Ω 9.7 20 ns tr Rise Time 2.5 10 ns td(off) Turn-Off Delay Time 17 30 ns tf Fall Time 5.7 12 ns Qg Total Gate Charge VGS = 0 V to -10 V VDD = -75 V, ID = -2.2 A 11 16 nC Qg Total Gate Charge VGS = 0 V to -6 V 7 10 nC Qgs Gate to Source Charge 3.2 nC Qgd Gate to Drain “Miller” Charge 1.9 nC VSD Source-Drain Diode Forward Voltage VGS = 0 V, IS = -2.2 A (Note 2) -0.8 -1.3 V VGS = 0 V, IS = -2 A (Note 2) -0.8 -1.2 trr Reverse Recovery Time IF = -2.2 A, di/dt = 100 A/μs 65 104 ns Qrr Reverse Recovery Charge 157 251 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 3 mH, IAS = -6 A, VDD = -150 V, VGS = -10 V. 100% tested at L = 0.3 mH, IAS = -13 A. 4. Pulsed Id please refer to Fig 11 SOA graph for more details. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b) 125 °C/W when mounted on a minimum pad. G D F D S S F S S G D F D S S F S S

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www.fairchildsemi.com3©2015 Fairchild Semiconductor Corporation FDS86267P Rev 1.0 F D S 8 6267P P -C h an n el S h ield ed G ate P o w erT ren ch ® M O S F E T Typical Characteristics TJ = 25 °C unless otherwise noted Figure 1. 0 1 2 3 4 5 0 2 4 6 8 10 VGS = -5.5 V VGS = -5 V VGS = -6 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = -4.5 V VGS = -10 V -I D , D R A IN C U R R E N T ( A ) -VDS, DRAIN TO SOURCE VOLTAGE (V) On Region Characteristics Figure 2. 0 2 4 6 8 10 0 10 20 30 40 VGS = -5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX N O R M A L IZ E D D R A IN T O S O U R C E O N -R E S IS T A N C E -ID, DRAIN CURRENT (A) VGS = -5.5 V VGS = -6 V VGS = -4.5 V VGS = -10 V Normalized On-Resistance vs Drain Current and Gate Voltage Figure 3. Normalized On Resistance -75 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 ID = -2.2 A VGS = -10 V N O R M A L IZ E D D R A IN T O S O U R C E O N -R E S IS T A N C E TJ, JUNCTION TEMPERATURE (oC) vs Junction Temperature Figure 4. 4 5 6 7 8 9 10 0 500 1000 1500 TJ = 125 oC ID = -2.2 A TJ = 25 oC -VGS, GATE TO SOURCE VOLTAGE (V) r D S (o n ), D R A IN T O S O U R C E O N -R E S IS T A N C E ( m Ω ) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX On-Resistance vs Gate to Source Voltage Figure 5. Transfer Characteristics 2 3 4 5 6 7 0 2 4 6 8 10 TJ = 150 oC VDS = -5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX TJ = -55 oC TJ = 25 oC -I D , D R A IN C U R R E N T ( A ) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. 0.0 0.3 0.6 0.9 1.2 1.5 0.001 0.01 0.1 1 10 TJ = -55 oC TJ = 25 oC TJ = 150 oC VGS = 0 V -I S , R E V E R S E D R A IN C U R R E N T ( A ) -VSD, BODY DIODE FORWARD VOLTAGE (V) Source to Drain Diode Forward Voltage vs Source Current

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www.fairchildsemi.com4©2015 Fairchild Semiconductor Corporation FDS86267P Rev 1.0 F D S 8 6267P P -C h an n el S h ield ed G ate P o w erT ren ch ® M O S F E T Figure 7. 0 3 6 9 12 0 2 4 6 8 10 ID = -2.2 A VDD = -100 V VDD = -50 V -V G S , G A T E T O S O U R C E V O L T A G E ( V ) Qg, GATE CHARGE (nC) VDD = -75 V Gate Charge Characteristics Figure 8. 0.1 1 10 100 1 10 100 1000 f = 1 MHz VGS = 0 V C A P A C IT A N C E ( p F ) -VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss Capacitance vs Drain to Source Voltage Figure 9. 0.001 0.01 0.1 1 10 1 10 50 TJ = 125 oC TJ = 25 oC TJ = 100 oC tAV, TIME IN AVALANCHE (ms) -I A S , A V A L A N C H E C U R R E N T ( A ) Unclamped Inductive Switching Capability Figure 10. 25 50 75 100 125 150 0.0 0.4 0.8 1.2 1.6 2.0 2.4 VGS = -6 V RθJA = 50 oC/W VGS = -10 V -I D , D R A IN C U R R E N T ( A ) TC, CASE TEMPERATURE ( o C) Maximum Continuous Drain Current vs Ambient Temperature Figure 11. Forward Bias Safe Operating Area 0.01 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 10 s CURVE BENT TO MEASURED DATA 100 μs 10 ms DC 1 s 100 ms 1 ms -I D , D R A IN C U R R E N T ( A ) -VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED RθJA = 125 oC/W TA = 25 oC Figure 12. Single Pulse Maximum Power Dissipation 10-4 10-3 10-2 10-1 1 10 100 1000 0.1 1 10 100 1000 SINGLE PULSE RθJA = 125 oC/W TA = 25 oC P ( P K ), P E A K T R A N S IE N T P O W E R ( W ) t, PULSE WIDTH (sec) Typical Characteristics TJ = 25 °C unless otherwise noted

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FDS86267P Reviews

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Thal*****hanna

December 27, 2021

Happy with purchase, would do business again

Erne*****Kaul

December 17, 2020

They work great exactly what I needed.

Abr*****Meyer

December 17, 2020

Received Quickly. Excellent Communication. Capacitors Look Excellent.

Kar*****unt

December 10, 2020

Went well this time Now have the IC and very pleased.

Madis*****tterson

December 6, 2020

Great communication with sales. A pleasure to do business with you.

Die*****Bean

December 6, 2020

Heisener parametric search for specific components is by far better than their competitors.

Natha*****obinson

December 4, 2020

Used this on starter solenoid and works as expected.

Alex*****acias

November 27, 2020

The order has arrived ahead of time, we appreciate it very much!! Thanks

Annabe*****wnsend

November 19, 2020

Solved my electrical back feed problems on my alternator.

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