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FDV302P

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FDV302P

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Part Number FDV302P
Manufacturer Fairchild/ON Semiconductor
Description MOSFET P-CH 25V 120MA SOT-23
Datasheet FDV302P Datasheet
Package TO-236-3, SC-59, SOT-23-3
In Stock 251,092 piece(s)
Unit Price $ 0.0698 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 21 - Jan 26 (Choose Expedited Shipping)
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Part Number # FDV302P (Transistors - FETs, MOSFETs - Single) is manufactured by Fairchild/ON Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For FDV302P specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add FDV302P with quantity into BOM. Heisener.com does NOT require any registration to request a quote of FDV302P.

FDV302P Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FDV302PDatasheet
PackageTO-236-3, SC-59, SOT-23-3
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.31nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds11pF @ 10V
Vgs (Max)��8V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Rds On (Max) @ Id, Vgs10 Ohm @ 200mA, 4.5V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23
Package / CaseTO-236-3, SC-59, SOT-23-3

FDV302P Datasheet

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Page 2

October 1997 FDV302P Digital FET, P-Channel General Description Features Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter FDV302P Units VDSS Drain-Source Voltage -25 V VGSS Gate-Source Voltage -8 V ID Drain Current - Continuous -0.12 A - Pulsed -0.5 PD Maximum Power Dissipation 0.35 W TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) 6.0 kV THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W FDV302P REV. F -25 V, -0.12 A continuous, -0.5 A Peak. RDS(ON) = 13 Ω @ VGS= -2.7 V RDS(ON) = 10 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. Replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET. This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one P-channel FET can replace several digital transistors with different bias resistors such as the DTCx and DCDx series. Mark:302 S D G SOT-23 SuperSOT TM-8 SOIC-16SO-8 SOT-223SuperSOTTM-6 © 1997 Fairchild Semiconductor Corporation

Page 3

Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -25 V ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 o C -20 mV / oC IDSS Zero Gate Voltage Drain Current VDS = -20 V, VGS = 0 V -1 µA TJ = 55°C -10 µA IGSS Gate - Body Leakage Current VGS = -8 V, VDS= 0 V -100 nA ON CHARACTERISTICS (Note) ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC 1.9 mV / oC VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.65 -1 -1.5 V RDS(ON) Static Drain-Source On-Resistance VGS = -2.7 V, ID = -0.05 A 10.6 13 Ω VGS = -4.5 V, ID = -0.2 A 7.9 10 TJ =125°C 12 18 ID(ON) On-State Drain Current VGS = -2.7 V, VDS = -5 V -0.05 A gFS Forward Transconductance VDS = -5 V, ID= -0.2 A 0.135 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz 11 pF Coss Output Capacitance 7 pF Crss Reverse Transfer Capacitance 1.4 pF SWITCHING CHARACTERISTICS (Note) tD(on) Turn - On Delay Time VDD = -6 V, ID = -0.2 A, VGS = -4.5 V, RGEN = 50 Ω 5 12 ns tr Turn - On Rise Time 8 16 ns tD(off) Turn - Off Delay Time 9 18 ns tf Turn - Off Fall Time 5 10 ns Qg Total Gate Charge VDS = -5 V, ID = -0.2 A, VGS = -4.5 V 0.22 0.31 nC Qgs Gate-Source Charge 0.11 nC Qgd Gate-Drain Charge 0.04 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current -0.2 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.2 A (Note) -1 -1.5 V Note: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDV302P REV. F

Page 4

FDV302P REV. F 0 1 2 3 4 0 0.05 0.1 0.15 0.2 -V , DRAIN-SOURCE VOLTAGE (V) -I , D R A IN -S O U R C E C U R R E N T (A ) V = -5.0VGS DS D -4.5 -2.7 -2.5 -2.0 -3.0 -3.5 -4.0 0 0.05 0.1 0.15 0.2 0.5 1 1.5 2 -I , DRAIN CURRENT (A) D R A IN -S O U R C E O N -R E S IS TA N C E R , N O R M A LI ZE D V = -2.0 VGS D D S (O N ) -3.5 -4.5 -2.7 -2.5 -3.0 -4.0 Typical Electrical Characteristics Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 3. On-Resistance Variation with Temperature. 0.5 1 1.5 2 2.5 3 0 0.02 0.04 0.06 0.08 -V , GATE TO SOURCE VOLTAGE (V) -I , D R A IN C U R R E N T (A ) V = -5VDS GS D T = -55°CA 125°C 25°C Figure 5. Transfer Characteristics. 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1 0.5 -V , BODY DIODE FORWARD VOLTAGE (V) -I , R E V E R S E D R A IN C U R R E N T (A ) T = 125°CJ 25°C -55°C V = 0VGS SD S Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Figure 4. On Resistance Variation with Gate-To- Source Voltage. -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 T , JUNCTION TEMPERATURE (°C) D R A IN -S O U R C E O N -R E S IS TA N C E J R , N O R M A LI ZE D D S (O N ) V = -2.7VGS I = -0.05AD 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 -V ,GATE TO SOURCE VOLTAGE (V) R , O N -R E S IS TA N C E (O H M ) GS D S (O N ) I = -0.05ADT = 25°CA 125 °C

FDV302P Reviews

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Har***** Suri

December 17, 2020

Not messy and easy to handle. I've used these professionally and for my self, and they never failed me.

Isra*****ibal

December 12, 2020

These are great for projects with the kids or doing any type of DIY projects. The case is nice to keep everything separated. Very nice.

Sava*****Dave

December 11, 2020

Very good, fast shipping, super reliable seller.

Jar*****Solis

November 24, 2020

The order has arrived ahead of time, we appreciate it very much!! Thanks

Lil*****wen

November 23, 2020

Purchasing from Heisener means the real part is obtained no worried for product quality.

Reyan*****hnson

November 22, 2020

Everything perfect. Great seller.

Ha*****a Li

November 12, 2020

Very effective shopping path, service steady as a rock, keep up the great work.

FDV302P Guarantees

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