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FII30-12E

FII30-12E

FII30-12E

For Reference Only

Part Number FII30-12E
Manufacturer IXYS
Description IGBT PHASE TOP ISOPLUS I4-PAC-5
Datasheet FII30-12E Datasheet
Package i4-Pac?-5
In Stock 432
Quota Limit No Limit
Lead Time To be Confirmed
Estimated Delivery Time Jun 29 - Jul 4 (Choose Expedited Shipping)

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FII30-12E

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FII30-12E Specifications

ManufacturerIXYS
CategoryDiscrete Semiconductor Products - Transistors - IGBTs - Arrays
Datasheet FII30-12E Datasheet
Packagei4-Pac?-5
Series-
IGBT TypeNPT
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)33A
Power - Max150W
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 20A
Current - Collector Cutoff (Max)200µA
Input Capacitance (Cies) @ Vce1.2nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / Casei4-Pac™-5
Supplier Device PackageISOPLUS i4-PAC™

FII30-12E Datasheet

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FII30-12E MCMA110P1200TA IXYS, MOD THYRISTOR DUAL 12KV TO-240, Package:TO-240AA, Series:- , IGBT Type:NPT, Configuration:Half Bridge, Voltage - Collector Emitter Breakdown (Max):1200V, Current - Collector (Ic) (Max):33A, Power - Max:150W, Vce(on) (Max) @ Vge, Ic:2.9V @ 15V, 20A, Current - Collector Cutoff (Max):200µA, Input Capacitance (Cies) @ Vce:1.2nF @ 25V, Input:Standard, NTC Thermistor:No, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Package / Case:i4-Pac™-5, Supplier Device Package:ISOPLUS i4-PAC™

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