Part Number | FMMT720TA |
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Manufacturer | Diodes Incorporated |
Description | TRANS PNP 40V 1.5A SOT23-3 |
Datasheet | FMMT720TA Datasheet |
Package | TO-236-3, SC-59, SOT-23-3 |
In Stock | 291,802 piece(s) |
Unit Price | $ 0.1705 * |
Lead Time | Can Ship Immediately |
Estimated Delivery Time | Jan 28 - Feb 2 (Choose Expedited Shipping) |
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Part Number # FMMT720TA (Transistors - Bipolar (BJT) - Single) is manufactured by Diodes Incorporated and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.
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Manufacturer | Diodes Incorporated |
Category | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single |
Datasheet | FMMT720TADatasheet |
Package | TO-236-3, SC-59, SOT-23-3 |
Series | - |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 1.5A |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Vce Saturation (Max) @ Ib, Ic | 330mV @ 100mA, 1.5A |
Current - Collector Cutoff (Max) | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 2V |
Power - Max | 625mW |
Frequency - Transition | 190MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 |
FMMT720 Document Number: DS33238 Rev. 4 - 2 1 of 7 www.diodes.com January 2013 © Diodes Incorporated A Product Line of Diodes Incorporated FMMT720 40V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features • BVCEO > -40V • IC = -1.5A Continuous Collector Current • ICM = -4A Peak Pulse Current • Low Saturation Voltage VCE(sat) < -220mV @ -1A • RCE(SAT) = 163mΩ for a low equivalent on-resistance • 625mW power dissipation • hFE characterised up to -3A for high current gain hold-up • Complementary NPN Type: FMMT619 • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP capable (Note 4) Mechanical Data • Case: SOT23 • Case Material: molded plastic, “Green” molding compound • UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 • Weight 0.008 grams (approximate) Applications • Gate Driving MOSFETs and IGBTs • DC-DC Converters • Charging circuit • Power switches Ordering Information (Note 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel FMMT720TA AEC-Q101 720 7 8 3,000 FMMT720QTA Automotive 720 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. 5. For packaging details, go to our website at http://www.diodes.com Marking Information 720 = Product Type Marking Code SOT23 Top View Pin-Out Top View Device Symbol C E B C E B 720
FMMT720 Document Number: DS33238 Rev. 4 - 2 2 of 7 www.diodes.com January 2013 © Diodes Incorporated A Product Line of Diodes Incorporated FMMT720 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -1.5 A Peak Pulse Current ICM -4 A Base Current IB -500 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 6) PD 625 mW Power Dissipation (Note 7) PD 806 mW Thermal Resistance, Junction to Ambient (Note 6) RθJA 200 °C/W Thermal Resistance, Junction to Ambient (Note 7) RθJA 155 °C/W Thermal Resistance, Junction to Leads (Note 8) RθJL 194 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C Notes: 6. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 7. Same as note 6, except the device is measured at t ≤ 5 sec. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FMMT720 Document Number: DS33238 Rev. 4 - 2 3 of 7 www.diodes.com January 2013 © Diodes Incorporated A Product Line of Diodes Incorporated FMMT720 Thermal Characteristics and Derating information 0 25 50 75 100 125 150 175 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Derating Curve Temperature (°C) M a x P o w er D is si p at io n ( W ) 100µ 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 140 160 180 200 220 T amb =25°C Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 T h e rm al R e si st an ce ( °C /W ) Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k 0.1 1 10 100 Single Pulse T amb =25°C Pulse Power Dissipation Pulse Width (s) M a xi m um P o w e r (W )
FMMT720 Document Number: DS33238 Rev. 4 - 2 4 of 7 www.diodes.com January 2013 © Diodes Incorporated A Product Line of Diodes Incorporated FMMT720 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -40 -95 - V IC = -100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO -40 -85 - V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 -8.8 - V IE = -100µA Collector Cutoff Current ICBO - <1 -100 nA VCB = -35V Emitter Cutoff Current IEBO - <1 -100 nA VEB = -5.6V Collector Emitter Cutoff Current ICES - <1 -100 nA VCE= -35V Static Forward Current Transfer Ratio (Note 10) hFE 300 480 - - IC = -10mA, VCE = -2V 300 450 - IC = -0.1A, VCE = -2V 180 290 - IC = -1A, VCE = -2V 60 130 - IC = -1.5A, VCE = -2V 12 22 - IC = -3A, VCE = -2V Collector-Emitter Saturation Voltage (Note 10) VCE(sat) - -26 -40 mV IC =- 0.1A, IB = -10mA - -150 -220 mV IC = -1A, IB = -50mA - -245 -330 mV IC = -1.5A, IB = -100mA Base-Emitter Turn-On Voltage(Note 10) VBE(on) - -0.80 -1.0 V IC = -1.5A, VCE = -2V Base-Emitter Saturation Voltage(Note 10) VBE(sat) - -0.89 -1.0 V IC = -1.5A, IB = -75mA Output Capacitance Cobo - 19 25 pF VCB = -10V, f = 1MHz Transition Frequency fT 150 180 - MHz VCE = -10V, IC = -50mA, f = 100MHz Turn-On Time ton - 40 - ns VCC = -15V, IC = -0.75A IB1 = IB2 = -15mA Turn-Off Time toff - 435 - ns Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
FMMT720 Document Number: DS33238 Rev. 4 - 2 5 of 7 www.diodes.com January 2013 © Diodes Incorporated A Product Line of Diodes Incorporated FMMT720 Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
FMMT720 Document Number: DS33238 Rev. 4 - 2 6 of 7 www.diodes.com January 2013 © Diodes Incorporated A Product Line of Diodes Incorporated FMMT720 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 α 0° 8° - All Dimensions in mm Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 A M J L D F B C H K G K1 X E Y CZ
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