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FODM3062R2

hot FODM3062R2

FODM3062R2

For Reference Only

Part Number FODM3062R2
Manufacturer Fairchild/ON Semiconductor
Description OPTOISOLATOR 3.75KV TRIAC 4SMD
Datasheet FODM3062R2 Datasheet
Package 4-SMD, Gull Wing
In Stock 788 piece(s)
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FODM3062R2 Specifications

ManufacturerFairchild/ON Semiconductor
CategoryIsolators - Optoisolators - Triac, SCR Output
Datasheet FODM3062R2 Datasheet
Package4-SMD, Gull Wing
Series-
Output TypeTriac
Zero Crossing CircuitYes
Number of Channels1
Voltage - Isolation3750Vrms
Voltage - Off State600V
Static dV/dt (Min)600V/µs
Current - LED Trigger (Ift) (Max)10mA
Current - On State (It (RMS)) (Max)70mA
Current - Hold (Ih)300µA (Typ)
Voltage - Forward (Vf) (Typ)1.5V (Max)
Current - DC Forward (If) (Max)60mA
Operating Temperature-40°C ~ 100°C
Mounting TypeSurface Mount
Package / Case4-SMD, Gull Wing
Supplier Device Package4-Mini-Flat
ApprovalscUL, UL

FODM3062R2 Datasheet

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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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F O D M 3 0 X X — 4 -P in F u ll P itc h M in i-F la t P a c k ag e Z e ro -C ro s s T ria c D riv e r O u tp u t O p to c o u p lers ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FODM30XX Rev. 1.2 May 2016 FODM3062, FODM3063, FODM3082, FODM3083 4-Pin Full Pitch Mini-Flat Package Zero-Cross Triac Driver Output Optocouplers Features • Critical Rate of Rise of Off-Stage Voltage - dv/dt of 600 V/µs Guaranteed • Zero Voltage Crossing • Peak Blocking Voltage - 600 V (FODM306X) - 800 V (FODM308X) • Compact 4-Pin Surface Mount Package - 2.4 mm Maximum Standoff Height • Safety Regulatory Approvals: - UL1577, 3,750 VACRMS for 1 Minute - DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage Applications • Solenoid/valve controls • Lighting controls • Static power switches • AC motor drives • Temperature controls • E.M. contactors • AC motor starters • Solid state relays Description The FODM306X and FODM308X series consist of an infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver, and is housed in a compact 4-pin mini-flat package. The lead pitch is 2.54 mm. They are designed for use with a triac in the interface of logic systems to equipment powered from 115/240 VAC lines, such as solid state relays, industrial controls, motors, solenoids and consumer appliances. Functional Schematic Package Outlines MAIN TERM. 1 2 ANODE CATHODE 3 4 MAIN TERM. ZERO CROSSING CIRCUIT

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©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FODM30XX Rev. 1.2 2 F O D M 3 0 X X — 4 -P in F u ll P itc h M in i-F la t P a c k ag e Z e ro -C ro s s T ria c D riv e r O u tp u t O p to c o u p lers Safety and Insulation Ratings As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Note: 1. Safety limit values – maximum values allowed in the event of a failure. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV < 300 VRMS I–III Climatic Classification 40/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit VPR Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 904 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak VIORM Maximum Working Insulation Voltage 565 Vpeak VIOTM Highest Allowable Over-Voltage 6000 Vpeak External Creepage  5 mm External Clearance  5 mm DTI Distance Through Insulation (Insulation Thickness)  0.4 mm TS Case Temperature (1) 150 °C IS,INPUT Input Current (1) 200 mA PS,OUTPUT Output Power (1) 300 mW RIO Insulation Resistance at TS, VIO = 500 V (1) > 109 

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©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FODM30XX Rev. 1.2 3 F O D M 3 0 X X — 4 -P in F u ll P itc h M in i-F la t P a c k ag e Z e ro -C ro s s T ria c D riv e r O u tp u t O p to c o u p lers Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified. Symbol Parameter Value Unit TSTG Storage Temperature -55 to +150 °C TOPR Operating Temperature -40 to +100 °C TJ Junction Temperature -40 to +125 °C TSOL Lead Solder Temperature 260 for 10 sec °C EMITTER IF (avg) Continuous Forward Current 60 mA IF (pk) Peak Forward Current (1 μs pulse, 300 pps.) 1 A VR Reverse Input Voltage 6 V PD(EMITTER) Power Dissipation (No derating required over operating temp. range) 100 mW DETECTOR IT(RMS) On-State RMS Current 70 mA VDRM Off-State Output Terminal Voltage FODM3062/FODM3063 600 V FODM3082/FODM3083 800 V PD(DETECTOR) Power Dissipation (No derating required over operating temp. range) 300 mW

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©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FODM30XX Rev. 1.2 4 F O D M 3 0 X X — 4 -P in F u ll P itc h M in i-F la t P a c k ag e Z e ro -C ro s s T ria c D riv e r O u tp u t O p to c o u p lers Electrical Characteristics TA = 25°C unless otherwise specified. Individual Component Characteristics Transfer Characteristics Zero Crossing Characteristics Isolation Characteristics Notes: 2. Test voltage must be applied within dv/dt rating. 3. This is static dv/dt. See Figure 10 for test circuit. Commutating dv/dt is function of the load-driving thyristor(s) only. 4. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max IFT (10mA for FODM3062/82, 5mA for FODM3063/83) and absolute max IF (60 mA). 5. Steady state isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 & 2 are common, and pins 3 & 4 are common. Symbol Parameter Test Conditions Device Min. Typ. Max. Unit EMITTER VF Input Forward Voltage IF = 30 mA All 1.50 V IR Reverse Leakage Current VR = 6 V All 100 μA DETECTOR IDRM Peak Blocking Current Either Direction Rated VDRM, IF = 0 (2) All 500 nA dv/dt Critical Rate of Rise of Off-State Voltage IF = 0 (Figure 10) (3) All 600 V/μs Symbol Parameter Test Conditions Device Min. Typ. Max. Unit IFT LED Trigger Current Main Terminal Voltage = 3 V(4) FODM3062, FODM3082 10 mA FODM3063, FODM3083 5 IH Holding Current, Either Direc- tion All 300 µA VTM Peak On-State Voltage, Either Direction IF = Rated IFT, ITM = 100 mA peak All 3 V Symbol Parameter Test Conditions Device Min. Typ. Max. Unit VIH Inhibit Voltage, MT1-MT2 Voltage above which device will not trigger IFT = Rated IFT All 20 V IDRM2 Leakage in Inhibit State IFT = Rated IFT, Rated VDRM, Off-State All 2 mA Symbol Parameter Test Conditions Device Min. Typ. Max. Unit VISO Steady State Isolation Voltage(5) 1 Minute, R.H. = 40% to 60% All 3,750 VACRMS

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©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FODM30XX Rev. 1.2 5 F O D M 3 0 X X — 4 -P in F u ll P itc h M in i-F la t P a c k ag e Z e ro -C ro s s T ria c D riv e r O u tp u t O p to c o u p lers Typical Performance Characteristics 10 IF - FORWARD CURRENT (mA) Fig. LED Forward Voltage vs. Forward Current 1 100 V F - F O R W A R D V O L T A G E ( V ) 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.8 1.7 TA = -40°C TA = 25°C TA = 100°C -40 -20 0 20 40 60 80 TA - AMBIENT TEMPERATURE (°C) Fig. Leakage Current vs. Ambient Temperature 100 I D R M - L E A K A G E C U R R E N T ( n A ) 0.1 1 10 100 1000 VDRM = 600 V 0 20 40 06 TA - AMBIENT TEMPERATURE (°C) Fig. Holding Current vs. Ambient Temperature -40 -20 100 I H - H O L D IN G C U R R E N T ( N O R M A L IZ E D ) 0.1 1.0 10 80 NORMALIZED TO TA = 25°C 0 20 40 60 TA - AMBIENT TEMPERATURE (°C) Fig. Trigger Current vs. Ambient Temperature -40 -20 80 I F T - T R IG G E R C U R R E N T ( N O R M A L IZ E D ) 0.8 0.6 0.8 1.0 1.2 1.4 1.6 VTM = 3 V NORMALIZED TO TA = 25°C 100

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©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FODM30XX Rev. 1.2 6 F O D M 3 0 X X — 4 -P in F u ll P itc h M in i-F la t P a c k ag e Z e ro -C ro s s T ria c D riv e r O u tp u t O p to c o u p lers Typical Performance Characteristics (Continued) -1 0 1 2 VTM - ON-STATE VOLTAGE (V) Fig. On-State Characteristics -4 -3 -2 3 4 I T M - O N -S T A T E C U R R E N T ( m A ) -200 -400 -600 -800 0 200 400 600 800 TA = 25°C Fig. Off-State Output Terminal Voltage vs. Ambient Temperature 10 PWIN - LED TRIGGER PULSE WIDTH (°C) Fig. LED Current Required to Trigger vs. LED Pulse Width 1001 I F T - L E D T R IG G E R C U R R E N T ( N O R M A L IZ E D ) 0 2 4 6 8 10 12 NORMALIZED TO PWIN > > 100 μs NORMALIZED TO TA = 25°C 0 20 40 06 TA - AMBIENT TEMPERATURE (°C) V D R M - O F F -S T A T E O U T P U T T E R M IN A L V O L T A G E (N O R M A L IZ E D ) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 1.4 -40 -20 80 100 TA = 25°C

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©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FODM30XX Rev. 1.2 7 F O D M 3 0 X X — 4 -P in F u ll P itc h M in i-F la t P a c k ag e Z e ro -C ro s s T ria c D riv e r O u tp u t O p to c o u p lers Typical Application Information Figure . Static dv/dt Test Circuit 800 V (FODM3082) Vdc (FODM3083) 600 V (FODM3062) (FODM3063) R = 10 kΩ CTEST X100 SCOPE PROBE PULSE INPUT MERCURY WETTED RELAY 78 V (FODM3062, FODM3063) 504 V (FODM3082, FODM3083) 0 VOLTS APPLIED VOLTAGE WAVEFORM dv/dt = 0.63 Vmax RTEST D.U.T. τRC Vmax = 800 V (FODM3082, FODM3083) = 600 V (FODM3062, FODM3063) = 378 τRC (FODM3062, FODM3063) = 504 τRC (FODM3082, FODM3083) τRC Note: This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only. 1. The mercury wetted relay provides a high speed repeated pulse to the D.U.T. 2. 100x scope probes are used, to allow high speeds and voltages. 3. The worst-case condition for static dv/dt is established by triggering the D.U.T. with a normal LED input current, then removing the current. The variable RTEST allows the dv/dt to be gradually increased until the D.U.T. continues to trigger in response to the applied voltage pulse, even after the LED current has been removed. The dv/dt is then decreased until the D.U.T. stops triggering. tRC is measured at this point and recorded. Figure . Inverse-Parallel SCR Driver Circuit (240 VAC) VCC Rin 1 2 4 3 240 VAC SCR 360 Ω R1 D1 SCR R2 D2 LOAD Suggested method of firing two, back-to-back SCR’s, with a Fairchild triac driver. Diodes can be 1N4001; resistors, R1 and R2, are optional 330 ohms. Note: This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only. FODM3062 FODM3063 FODM3082 FODM3083

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©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FODM30XX Rev. 1.2 8 F O D M 3 0 X X — 4 -P in F u ll P itc h M in i-F la t P a c k ag e Z e ro -C ro s s T ria c D riv e r O u tp u t O p to c o u p lers Determining the Power Rating of the Series Resistors Used in a Zero-Cross Opto- TRIAC Driver Application Figure 1 . Hot-Line Switching Application Circuit 0.01 VCC Rin 1 2 4 3 240 VAC HOT NEUTRAL 360 Ω *For highly inductive loads (power factor < 0.5), change this value to 360 ohms. FODM3062 FODM3063 FODM3082 FODM3083 39 LOAD Typical circuit for use when hot line switching of 240 VAC is required. In this circuit the “hot” side of the line is switched and the load connected to the cold or neutral side. The load may be connected to either the neutral or hot line. Rin is calculated so that IF is equal to the rated IFT of the part, 5 mA for the FODM3063/83 and 10 mA for the FODM3062/82. The 39 Ω resistor and 0.01 μF capacitor are for snubbing of the triac and may or may not be necessary depending upon the particular triac and load used. The following will present the calculations for determining the power dissipation of the current limiting resistors found in an opto-TRIAC driver interface. Figure 1 shows a typical circuit to drive a sensitive gate four quadrant power TRIAC. This figure provides typical resistor values for a zero line cross detecting opto-TRIAC when operated from a mains voltage of 20 V to 240 V. The wattage rating for each resistor is not given because their dissipation is dependent upon characteristics of the power TRIAC being driven. Recall that the opto-TRIAC is used to trigger a four quadrant power TRIAC. Please note that these opto- TRIACs are not recommended for driving “snubberless” three quadrant power TRIACs. Under normal operation, the opto-TRIAC will fire when the mains voltage is lower than the minimum inhibit trigger voltage, and the LED is driven at a current greater than the maximum LED trigger current. As an example for the FODM3063, the LED trigger current should be greater than 5mA, and the mains voltage is less than 10 V peak. The inhibit voltage has a typical range of 10 V minimum and 20 V maximum. This means that if a sufficient LED current is flowing when the mains voltage is less than 10 V, the device will fire. If a trigger appears between 10 V and 20 V, the device may fire. If the trigger occurs after the mains voltage has reached 20 Vpeak, the device will not fire. The power dissipated from resistors placed in series with the opto-TRIAC and the gate of the power TRIAC is much smaller than one would expect. These current handling components only conduct current when the mains voltage is less than the maximum inhibit voltage. If the opto-TRIAC is triggered when the mains voltage is greater than the inhibit voltage, only the TRIAC leakage current will flow. The power dissipation in a 360 Ω resistor shown in Figure 1 is the product of the resistance (360 Ω) times the square of the current sum of main TRIAC’s gate current plus the current flowing gate to the MT2 resistor connection (330 Ω). This power calculation is further modified by the duty factor of the duration for this current flow. The duty factor is the ratio of the turn-on time of the main TRIAC to the sine of the single cycle time. Assuming a main TRIAC turn-on time of 50 μs and a 60 Hz mains voltage, the duty cycle is approximately 0.6 %. The opto-TRIAC only conducts current while triggering the main TRIAC. Once the main TRIAC fires, its on-state voltage is typically lower than the on-state sustaining voltage of the opto-TRIAC. Thus, once the main TRIAC fires, the opto-TRIAC is often shunted off. This situation results in very low power dissipation for both the 360 Ω and 330 Ω resistors, when driving a traditional four quadrant power TRIAC. If a three quadrant “snubberless” TRIAC is driven by the opto-TRIAC, the calculations are different. When the main power TRIAC is driving a high power factor (resistive) load, it shuts off during the fourth quadrant. 3 0 Ω

FODM3062R2 Reviews

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December 31, 2020

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October 7, 2019

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October 20, 2018

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