Contact Us
SalesDept@heisener.com +86-755-83210559 ext. 811
Language Translation
  • • English
  • • Español
  • • Deutsch
  • • Français
  • • Italiano
  • • Nederlands
  • • Português
  • • русский язык
  • • 日本語
  • • 한국어
  • • 简体中文
  • • 繁體中文

* Please refer to the English Version as our Official Version.

Change Country

If your country is not listed, please select International as your region.

  • International
Americas
  • Argentina
  • Brasil
  • Canada
  • Chile
  • Colombia
  • Costa Rica
  • Dominican Republic
  • Ecuador
  • Guatemala
  • Honduras
  • Mexico
  • Peru
  • Puerto Rico
  • United States
  • Uruguay
  • Venezuela
Asia/Pacific
  • Australia
  • China
  • Hong Kong
  • Indonesia
  • Israel
  • India
  • Japan
  • Korea, Republic of
  • Malaysia
  • New Zealand
  • Philippines
  • Singapore
  • Thailand
  • Taiwan
  • Vietnam
Europe
  • Austria
  • Belgium
  • Bulgaria
  • Switzerland
  • Czech Republic
  • Germany
  • Denmark
  • Estonia
  • Spain
  • Finland
  • France
  • United Kingdom
  • Greece
  • Croatia
  • Hungary
  • Ireland
  • Italy
  • Netherlands
  • Norway
  • Poland
  • Portugal
  • Romania
  • Russian Federation
  • Sweden
  • Slovakia
  • Turkey

FQI3N90TU

FQI3N90TU

FQI3N90TU

For Reference Only

Part Number FQI3N90TU
Manufacturer Fairchild/ON Semiconductor
Description MOSFET N-CH 900V 3.6A I2PAK
Datasheet FQI3N90TU Datasheet
Package TO-262-3 Long Leads, I2Pak, TO-262AA
In Stock 334 piece(s)
Unit Price Request a Quote
Lead Time To be Confirmed
Estimated Delivery Time Mar 2 - Mar 7 (Choose Expedited Shipping)
Winter Hot Sale

* Free Shipping * Up to $100 Discount

Winter Hot Sale

Request for Quotation

FQI3N90TU

Quantity
  • We are offering FQI3N90TU for competitive price in the global market, please send us a quota request for pricing. Thank you!
  • To process your RFQ, please add FQI3N90TU with quantity into BOM. Heisener.com does NOT require any registration to request a quote of FQI3N90TU.
  • To learn about the specification of FQI3N90TU, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
Payment Methods
Delivery Services

Do you have any question about FQI3N90TU?

+86-755-83210559 ext. 811 SalesDept@heisener.com heisener007 2354944915 Send Message

Certified Quality

Heisener's commitment to quality has shaped our processes for sourcing, testing, shipping, and every step in between. This foundation underlies each component we sell.

ISO9001:2015, ICAS, IAF, UKAS

View the Certificates

FQI3N90TU Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FQI3N90TU Datasheet
PackageTO-262-3 Long Leads, I2Pak, TO-262AA
SeriesQFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25��C3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds910pF @ 25V
Vgs (Max)��30V
Power Dissipation (Max)3.13W (Ta), 130W (Tc)
Rds On (Max) @ Id, Vgs4.25 Ohm @ 1.8A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA

FQI3N90TU Datasheet

Page 1

Page 2

©2000 Fairchild Semiconductor International September 2000 Rev. A, September 2000 F Q B 3N 90 / F Q I3 N 9 0 QFETTM FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. Features • 3.6A, 900V, RDS(on) = 4.25 Ω @ VGS = 10 V • Low gate charge ( typical 20 nC) • Low Crss ( typical 8.0 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQB3N90 / FQI3N90 Units VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (TC = 25°C) 3.6 A - Continuous (TC = 100°C) 2.28 A IDM Drain Current - Pulsed (Note 1) 14.4 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 450 mJ IAR Avalanche Current (Note 1) 3.6 A EAR Repetitive Avalanche Energy (Note 1) 13 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TA = 25°C) * 3.13 W Power Dissipation (TC = 25°C) 130 W - Derate above 25°C 1.04 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units Rθ JC Thermal Resistance, Junction-to-Case -- 0.96 °C/W Rθ JA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W Rθ JA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ! " ! ! ! " " " S D G D2-PAK FQB Series I2-PAK FQI Series G S D G SD

Page 3

Rev. A, September 2000 F Q B 3N 90 / F Q I3 N 9 0 (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) ©2000 Fairchild Semiconductor International Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 66mH, IAS = 3.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 3.6A, di/dt ≤ 200A/µ s, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µ s, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µ A 900 -- -- V ∆ BVDSS / ∆ TJ Breakdown Voltage Temperature Coefficient ID = 250 µ A, Referenced to 25°C -- 1.0 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- -- 10 µ A VDS = 720 V, TC = 125°C -- -- 100 µ A IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µ A 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.8 A -- 3.3 4.25 Ω gFS Forward Transconductance VDS = 50 V, ID = 1.8 A -- 4.1 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 700 910 pF Coss Output Capacitance -- 65 85 pF Crss Reverse Transfer Capacitance -- 8.0 10 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 450 V, ID = 3.6 A, RG = 25 Ω -- 18 45 ns tr Turn-On Rise Time -- 45 100 ns td(off) Turn-Off Delay Time -- 40 90 ns tf Turn-Off Fall Time -- 35 80 ns Qg Total Gate Charge VDS = 720 V, ID = 3.6 A, VGS = 10 V -- 20 26 nC Qgs Gate-Source Charge -- 4.3 -- nC Qgd Gate-Drain Charge -- 9.1 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 3.6 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 14.4 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.6 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 3.6 A, dIF / dt = 100 A/µ s -- 510 -- ns Qrr Reverse Recovery Charge -- 3.2 -- µ C

Page 4

F Q B 3N 90 / F Q I3 N 9 0 Rev. A, September 2000©2000 Fairchild Semiconductor International 0.2 0.4 0.6 0.8 1.0 1.2 10 -1 10 0 10 1 150℃ ※ Notes : 1. V GS = 0V 2. 250μs Pulse Test 25℃ I D R , R ev er se D ra in C ur re nt [A ] V SD , Source-Drain voltage [V] 0 2 4 6 8 10 2 3 4 5 6 7 8 V GS = 20V V GS = 10V ※ Note : T J = 25℃ R D S (O N ) [Ω ], D ra in -S ou rc e O n- R es is ta nc e I D , Drain Current [A] 2 4 6 8 10 10 -1 10 0 10 1 150 o C 25 o C -55 o C ※ Notes : 1. V DS = 50V 2. 250μs Pulse Test I D , D ra in C ur re nt [A ] V GS , Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ※ Notes : 1. 250μs Pulse Test 2. T C = 25℃ I D , D ra in C ur re nt [A ] V DS , Drain-Source Voltage [V] 0 3 6 9 12 15 18 21 0 2 4 6 8 10 12 V DS = 450V V DS = 180V V DS = 720V ※ Note : I D = 3.6 A V G S , G at e- S ou rc e V ol ta ge [V ] Q G , Total Gate Charge [nC] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd ※ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss C ap ac ita nc e [p F] V DS , Drain-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

Page 5

©2000 Fairchild Semiconductor International F Q B 3N 90 / F Q I3 N 9 0 Rev. A, September 2000 1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1 1 0 -2 1 0 -1 1 0 0 ※ N o te s : 1 . Z θ J C( t) = 0 .9 6 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 / t 2 3 . T J M - T C = P D M * Z θ J C( t) s in g le p u ls e D = 0 .5 0 .0 2 0 .2 0 .0 5 0 .1 0 .0 1 Z θ J C(t ), T h e rm a l R e s p o n s e t 1 , S q u a re W a v e P u ls e D u ra t io n [s e c ] 25 50 75 100 125 150 0 1 2 3 4 I D , D ra in C ur re nt [A ] T C , Case Temperature [℃] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 DC 10 ms 1 ms 100 µ s Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse I D , D ra in C ur re nt [A ] V DS , Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = 10 V 2. I D = 1.8 A R D S (O N ) , ( N or m al iz ed ) D ra in -S ou rc e O n- R es is ta nc e T J , Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※ Notes : 1. V GS = 0 V 2. I D = 250 μA BV D SS , ( N or m al iz ed ) D ra in -S ou rc e Br ea kd ow n Vo lta ge T J , Junction Temperature [ o C] Typical Characteristics (Continued) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature Figure 11. Transient Thermal Response Curve t1 PDM t2

Page 6

F Q B 3N 90 / F Q I3 N 9 0 Rev. A, September 2000©2000 Fairchild Semiconductor International Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT VGS VDS 10% 90% td(on) tr t on t off td(off) tf VDD 10V VDS RL DUT RG VGS EAS = L IAS 2---- 2 1 -------------------- BVDSS - VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG L I D t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

Page 7

©2000 Fairchild Semiconductor International F Q B 3N 90 / F Q I3 N 9 0 Rev. A, September 2000 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS + _ Driver RG Same Type as DUT VGS • dv/dt controlled by RG • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width Gate Pulse Period --------------------------

Page 8

F Q B 3N 90 / F Q I3 N 9 0 Rev. A, September 2000©2000 Fairchild Semiconductor International Package Dimensions 10.00 ± 0.20 10.00 ± 0.20 (8.00) (4.40) 1.27 ± 0.10 0.80 ± 0.10 0.80 ± 0.10 (2XR0.45) 9.90 ± 0.20 4.50 ± 0.20 0.10 ± 0.15 2.40 ± 0.20 2 .5 4 ± 0 .3 0 1 5 .3 0 ± 0 .3 0 9 .2 0 ± 0 .2 0 4 .9 0 ± 0 .2 0 1 .4 0 ± 0 .2 0 2 .0 0 ± 0 .1 0 (0 .7 5 ) (1 .7 5 ) (7 .2 0 ) 0°~ 3° 1 .2 0 ± 0 .2 0 9 .2 0 ± 0 .2 0 1 5 .3 0 ± 0 .3 0 4 .9 0 ± 0 .2 0 (0 .4 0 ) 2.54 TYP 2.54 TYP 1.30 +0.10 –0.05 0.50 +0.10 –0.05 D2PAK

Page 9

©2000 Fairchild Semiconductor International F Q B 3N 90 / F Q I3 N 9 0 Rev. A, September 2000 Package Dimensions (Continued) 9.90 ± 0.20 2.40 ± 0.20 4.50 ± 0.20 1.27 ± 0.10 1.47 ± 0.10 (45° ) 0.80 ± 0.10 10.00 ± 0.20 2.54 TYP2.54 TYP 1 3 .0 8 ± 0 .2 0 9 .2 0 ± 0 .2 0 1 .2 0 ± 0 .2 0 1 0 .0 8 ± 0 .2 0 M A X 1 3 .4 0 M A X 3 .0 0 (0 .4 0 ) (1 .4 6 ) (0 .9 4 ) 1.30 +0.10 –0.05 0.50 +0.10 –0.05 I2PAK

FQI3N90TU Reviews

Average User Rating
5 / 5 (95)
★ ★ ★ ★ ★
5 ★
86
4 ★
10
3 ★
0
2 ★
0
1 ★
0

Denn*****amdar

February 12, 2020

These are high quality connectors. They work as you would expect them to. There is not much else you can say about them.

Chand*****illay

November 6, 2019

Arrived safely. All OK. Thanks

Elor*****cann

November 2, 2019

A well designed product that fit my custom PCB's perfectly. Easy to use. Sturdy construction. Highly recommend to all PCB builders.

Amel*****ohli

October 28, 2019

Solved my electrical back feed problems on my alternator.

Lan***** Bush

October 9, 2019

Arrived promptly, carefully packaged, as described, many thanks

Yos*****Oak

September 21, 2019

Very good product for electronic projects and are of great quality and test great.

Ally*****Grant

August 18, 2019

I always enjoy shopping with Heisener, never disappoint me, most dependable, and no long waiting for deliveries.

Anabe*****olmes

August 6, 2019

The parts as described and fast shipping. Thanks for the great service

Wren*****nings

August 4, 2019

I recently became very interested in electronics and I have used several of them. They work great.

Rex*****vers

August 1, 2019

This was a useful assortment of product that filled in a parts gap that I had on my electronic workbench. Thank you.

FQI3N90TU Guarantees

Service Guarantee

Service Guarantees

We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

FQI3N90TU Packaging

Verify Products
Customized Labels
Professional Packaging
Sealing
Packing
Insepction

FQI3N90TU Related Products

FQI3N90TU FQI47P06TU Fairchild/ON Semiconductor, MOSFET P-CH 60V 47A I2PAK, TO-262-3 Long Leads, I2Pak, TO-262AA, QFET? View
FQI3N90TU FQI32N12V2TU Fairchild/ON Semiconductor, MOSFET N-CH 120V 32A I2PAK, TO-262-3 Long Leads, I2Pak, TO-262AA, QFET? View
FQI3N90TU FQI32N20CTU Fairchild/ON Semiconductor, MOSFET N-CH 200V 28A I2PAK, TO-262-3 Long Leads, I2Pak, TO-262AA, QFET? View
FQI3N90TU FQI6N50TU Fairchild/ON Semiconductor, MOSFET N-CH 500V 5.5A I2PAK, TO-262-3 Long Leads, I2Pak, TO-262AA, QFET? View
FQI3N90TU HUF76419S3ST Fairchild/ON Semiconductor, MOSFET N-CH 60V 29A D2PAK, TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, QFET? View
FQI3N90TU FQI50N06LTU Fairchild/ON Semiconductor, MOSFET N-CH 60V 52.4A I2PAK, TO-262-3 Long Leads, I2Pak, TO-262AA, QFET? View
FQI3N90TU FQI27P06TU Fairchild/ON Semiconductor, MOSFET P-CH 60V 27A I2PAK, TO-262-3 Long Leads, I2Pak, TO-262AA, QFET? View
FQI3N90TU FQI6N40CTU Fairchild/ON Semiconductor, MOSFET N-CH 400V 6A I2PAK, TO-262-3 Long Leads, I2Pak, TO-262AA, QFET? View
FQI3N90TU FQI9N15TU Fairchild/ON Semiconductor, MOSFET N-CH 150V 9A I2PAK, TO-262-3 Long Leads, I2Pak, TO-262AA, QFET? View
FQI3N90TU FQI13N06TU Fairchild/ON Semiconductor, MOSFET N-CH 60V 13A I2PAK, TO-262-3 Long Leads, I2Pak, TO-262AA, QFET? View
FQI3N90TU FQI7N80TU Fairchild/ON Semiconductor, MOSFET N-CH 800V 6.6A I2PAK, TO-262-3 Long Leads, I2Pak, TO-262AA, QFET? View
FQI3N90TU FQI13N50CTU Fairchild/ON Semiconductor, MOSFET N-CH 500V 13A I2PAK, TO-262-3 Long Leads, I2Pak, TO-262AA, QFET? View

FQI3N90TU Tags

  • FQI3N90TU
  • FQI3N90TU PDF
  • FQI3N90TU datasheet
  • FQI3N90TU specification
  • FQI3N90TU image
  • Fairchild/ON Semiconductor
  • Fairchild/ON Semiconductor FQI3N90TU
  • buy FQI3N90TU
  • FQI3N90TU price
  • FQI3N90TU distributor
  • FQI3N90TU supplier
  • FQI3N90TU wholesales

FQI3N90TU is Available in