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FQI3P50TU

hot FQI3P50TU

FQI3P50TU

For Reference Only

Part Number FQI3P50TU
Manufacturer Fairchild/ON Semiconductor
Description MOSFET P-CH 500V 2.7A I2PAK
Datasheet FQI3P50TU Datasheet
Package TO-262-3 Long Leads, I2Pak, TO-262AA
In Stock 10796 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 21 - Jan 26 (Choose Expedited Shipping)
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FQI3P50TU

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  • To learn about the specification of FQI3P50TU, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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FQI3P50TU Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FQI3P50TU Datasheet
PackageTO-262-3 Long Leads, I2Pak, TO-262AA
SeriesQFET?
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25��C2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds660pF @ 25V
Vgs (Max)��30V
Power Dissipation (Max)3.13W (Ta), 85W (Tc)
Rds On (Max) @ Id, Vgs4.9 Ohm @ 1.35A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA

FQI3P50TU Datasheet

Page 1

Page 2

©2000 Fairchild Semiconductor International August 2000 Rev. A, August 2000 F Q B 3 P 5 0 / F Q I3 P 50 QFETTM FQB3P50 / FQI3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge. Features • -2.7A, -500V, RDS(on) = 4.9Ω @VGS = -10 V • Low gate charge ( typical 18 nC) • Low Crss ( typical 9.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQB3P50 / FQI3P50 Units VDSS Drain-Source Voltage -500 V ID Drain Current - Continuous (TC = 25°C) -2.7 A - Continuous (TC = 100°C) -1.71 A IDM Drain Current - Pulsed (Note 1) -10.8 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 250 mJ IAR Avalanche Current (Note 1) -2.7 A EAR Repetitive Avalanche Energy (Note 1) 8.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -4.5 V/ns PD Power Dissipation (TA = 25°C) * 3.13 W Power Dissipation (TC = 25°C) 85 W - Derate above 25°C 0.68 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units Rθ JC Thermal Resistance, Junction-to-Case -- 1.47 °C/W Rθ JA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W Rθ JA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) D2-PAK FQB Series I2-PAK FQI Series G S D G SD ● ● ● ▲▶ ! ! ! S D G

Page 3

©2000 Fairchild Semiconductor International F Q B 3 P 5 0 / F Q I3 P 5 0 (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Rev. A, August 2000 Elerical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 62mH, IAS = -2.7A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -2.7A, di/dt ≤ 200A/µ s, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µ s, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µ A -500 -- -- V ∆ BVDSS / ∆ TJ Breakdown Voltage Temperature Coefficient ID = -250 µ A, Referenced to 25°C -- 0.42 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = -500 V, VGS = 0 V -- -- -1 µ A VDS = -400 V, TC = 125°C -- -- -10 µ A IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µ A -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.35 A -- 3.9 4.9 Ω gFS Forward Transconductance VDS = -50 V, ID = -1.35 A -- 2.35 -- S Dynamic Characteristics Ciss Input Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 510 660 pF Coss Output Capacitance -- 70 90 pF Crss Reverse Transfer Capacitance -- 9.5 12 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -250 V, ID = -2.7 A, RG = 25 Ω -- 12 35 ns tr Turn-On Rise Time -- 56 120 ns td(off) Turn-Off Delay Time -- 35 80 ns tf Turn-Off Fall Time -- 45 100 ns Qg Total Gate Charge VDS = -400 V, ID = -2.7 A, VGS = -10 V -- 18 23 nC Qgs Gate-Source Charge -- 3.6 -- nC Qgd Gate-Drain Charge -- 9.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -2.7 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -10.8 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.7 A -- -- -5.0 V trr Reverse Recovery Time VGS = 0 V, IS = -2.7 A, dIF / dt = 100 A/µ s -- 270 -- ns Qrr Reverse Recovery Charge -- 1.5 -- µ C

Page 4

©2000 Fairchild Semiconductor International F Q B 3 P 5 0 / F Q I3 P 50 Rev. A, August 2000 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 V DS = -250V V DS = -100V V DS = -400V ※ Note : I D = -2.7 A -V G S , G at e- S ou rc e V ol ta ge [V ] Q G , Total Gate Charge [nC] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd ※ Notes : 1. V GS = 0 V 2. f = 1 MHzC rss C oss C iss C ap ac ita nc e [p F] V DS , Drain-Source Voltage [V] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 -1 10 0 10 1 150℃ ※ Notes : 1. V GS = 0V 2. 250μs Pulse Test 25℃ -I D R , R ev er se D ra in C ur re nt [ A ] -V SD , Source-Drain Voltage [V] 0 2 4 6 8 2 3 4 5 6 7 8 ※ Note : T J = 25℃ V GS = - 20V V GS = - 10V R D S (o n) [ Ω ], D ra in -S ou rc e O n- R es is ta nc e -I D , Drain Current [A] 2 4 6 8 10 10 -1 10 0 10 1 150℃ 25℃ -55℃ ※ Notes : 1. V DS = -50V 2. 250μs Pulse Test -I D , D ra in C ur re nt [ A ] -V GS , Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 V GS Top : -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ -I D , D ra in C ur re nt [A ] -V DS , Drain-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

Page 5

©2000 Fairchild Semiconductor International F Q B 3 P 5 0 / F Q I3 P 5 0 Rev. A, August 2000 1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1 1 0 -2 1 0 -1 1 0 0 ※ N o te s : 1 . Z θ J C ( t ) = 1 .4 7 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 / t 2 3 . T J M - T C = P D M * Z θ J C ( t ) s in g le p u ls e D = 0 .5 0 .0 2 0 .2 0 .0 5 0 .1 0 .0 1 Z θ J C(t ), T h e rm a l R e s p o n s e t 1 , S q u a re W a v e P u ls e D u ra t io n [s e c ] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -I D , D ra in C ur re nt [A ] T C , Case Temperature [℃] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 DC 10 ms 1 ms 100 µ s Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse -I D , D ra in C ur re nt [A ] -V DS , Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 ※ Notes : 1. V GS = -10 V 2. I D = -1.35 A R D S (O N ) , ( N or m al iz ed ) D ra in -S ou rc e O n- R es is ta nc e T J , Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※ Notes : 1. V GS = 0 V 2. I D = -250 μA -B V D SS , ( N or m al iz ed ) D ra in -S ou rc e Br ea kd ow n Vo lta ge T J , Junction Temperature [ o C] Typical Characteristics (Continued) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature Figure 11. Transient Thermal Response Curve t1 PDM t2

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©2000 Fairchild Semiconductor International F Q B 3 P 5 0 / F Q I3 P 50 Rev. A, August 2000 Charge VGS -10V Qg Qgs Qgd -3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT VDS VGS 10% 90% td(on) tr t on t off td(off) tfVDD -10V VDS RL DUT RG VGS EAS = L IAS 2---- 2 1 -------------------- BVDSS - VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time -10V DUT RG L I D t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

Page 7

©2000 Fairchild Semiconductor International F Q B 3 P 5 0 / F Q I3 P 5 0 Rev. A, August 2000 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS + _ Driver RG Compliment of DUT (N-Channel) VGS • dv/dt controlled by RG • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width Gate Pulse Period --------------------------

Page 8

©2000 Fairchild Semiconductor International F Q B 3 P 5 0 / F Q I3 P 50 Rev. A, August 2000 Package Dimensions 10.00 ± 0.20 10.00 ± 0.20 (8.00) (4.40) 1.27 ± 0.10 0.80 ± 0.10 0.80 ± 0.10 (2XR0.45) 9.90 ± 0.20 4.50 ± 0.20 0.10 ± 0.15 2.40 ± 0.20 2 .5 4 ± 0 .3 0 1 5 .3 0 ± 0 .3 0 9 .2 0 ± 0 .2 0 4 .9 0 ± 0 .2 0 1 .4 0 ± 0 .2 0 2 .0 0 ± 0 .1 0 (0 .7 5 ) (1 .7 5 ) (7 .2 0 ) 0°~ 3° 1 .2 0 ± 0 .2 0 9 .2 0 ± 0 .2 0 1 5 .3 0 ± 0 .3 0 4 .9 0 ± 0 .2 0 (0 .4 0 ) 2.54 TYP 2.54 TYP 1.30 +0.10 –0.05 0.50 +0.10 –0.05 D2PAK

Page 9

©2000 Fairchild Semiconductor International F Q B 3 P 5 0 / F Q I3 P 5 0 Rev. A, August 2000 Package Dimensions (Continued) 9.90 ± 0.20 2.40 ± 0.20 4.50 ± 0.20 1.27 ± 0.10 1.47 ± 0.10 (45° ) 0.80 ± 0.10 10.00 ± 0.20 2.54 TYP2.54 TYP 1 3 .0 8 ± 0 .2 0 9 .2 0 ± 0 .2 0 1 .2 0 ± 0 .2 0 1 0 .0 8 ± 0 .2 0 M A X 1 3 .4 0 M A X 3 .0 0 (0 .4 0 ) (1 .4 6 ) (0 .9 4 ) 1.30 +0.10 –0.05 0.50 +0.10 –0.05 I2PAK

FQI3P50TU Reviews

Average User Rating
5 / 5 (90)
★ ★ ★ ★ ★
5 ★
81
4 ★
9
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Regi***** Tate

October 7, 2019

The order has arrived ahead of time, we appreciate it very much!! Thanks

Addi*****Ravel

September 2, 2019

I can count on your provision for BOM of my design in near future

Lilia*****tanley

July 19, 2019

Good quality, buy back and then use, with the newly bought hard disk, very stable, at any time you can check things, not occupy space, very convenient.

Nata*****Craig

February 12, 2019

A good, reputable company that I will continue to deal with, thank you!

Nehemi*****udhari

January 19, 2019

I tested some and all look good.

Esth*****ayre

November 30, 2018

What I like was it was shipped fast and no damage.

Dela*****Chase

November 19, 2018

Items as described, quick dispatch, took a while with shipment.

Zand*****hields

October 16, 2018

I received technical certification with a good staff. They have good fair prices on brand names.

Gann*****eadows

October 16, 2018

Perfectly functioning!! on time and as described!

Char*****Saran

September 30, 2018

I always have good experiences in dealing with Heisener Electronics. They have the components I need in stock, their search function is great, and shipping is fast and always as promised.

FQI3P50TU Guarantees

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