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FQI3P50TU

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FQI3P50TU

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Part Number FQI3P50TU
Manufacturer Fairchild/ON Semiconductor
Description MOSFET P-CH 500V 2.7A I2PAK
Datasheet FQI3P50TU Datasheet
Package TO-262-3 Long Leads, I2Pak, TO-262AA
In Stock 10,796 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Aug 11 - Aug 16 (Choose Expedited Shipping)
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Part Number # FQI3P50TU (Transistors - FETs, MOSFETs - Single) is manufactured by Fairchild/ON Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For FQI3P50TU specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add FQI3P50TU with quantity into BOM. Heisener.com does NOT require any registration to request a quote of FQI3P50TU.

FQI3P50TU Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FQI3P50TUDatasheet
PackageTO-262-3 Long Leads, I2Pak, TO-262AA
SeriesQFET?
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds660pF @ 25V
Vgs (Max)��30V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 85W (Tc)
Rds On (Max) @ Id, Vgs4.9 Ohm @ 1.35A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA

FQI3P50TU Datasheet

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Page 2

©2000 Fairchild Semiconductor International August 2000 Rev. A, August 2000 F Q B 3 P 5 0 / F Q I3 P 50 QFETTM FQB3P50 / FQI3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge. Features • -2.7A, -500V, RDS(on) = 4.9Ω @VGS = -10 V • Low gate charge ( typical 18 nC) • Low Crss ( typical 9.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQB3P50 / FQI3P50 Units VDSS Drain-Source Voltage -500 V ID Drain Current - Continuous (TC = 25°C) -2.7 A - Continuous (TC = 100°C) -1.71 A IDM Drain Current - Pulsed (Note 1) -10.8 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 250 mJ IAR Avalanche Current (Note 1) -2.7 A EAR Repetitive Avalanche Energy (Note 1) 8.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -4.5 V/ns PD Power Dissipation (TA = 25°C) * 3.13 W Power Dissipation (TC = 25°C) 85 W - Derate above 25°C 0.68 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units Rθ JC Thermal Resistance, Junction-to-Case -- 1.47 °C/W Rθ JA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W Rθ JA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) D2-PAK FQB Series I2-PAK FQI Series G S D G SD ● ● ● ▲▶ ! ! ! S D G

Page 3

©2000 Fairchild Semiconductor International F Q B 3 P 5 0 / F Q I3 P 5 0 (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Rev. A, August 2000 Elerical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 62mH, IAS = -2.7A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -2.7A, di/dt ≤ 200A/µ s, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µ s, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µ A -500 -- -- V ∆ BVDSS / ∆ TJ Breakdown Voltage Temperature Coefficient ID = -250 µ A, Referenced to 25°C -- 0.42 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = -500 V, VGS = 0 V -- -- -1 µ A VDS = -400 V, TC = 125°C -- -- -10 µ A IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µ A -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.35 A -- 3.9 4.9 Ω gFS Forward Transconductance VDS = -50 V, ID = -1.35 A -- 2.35 -- S Dynamic Characteristics Ciss Input Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 510 660 pF Coss Output Capacitance -- 70 90 pF Crss Reverse Transfer Capacitance -- 9.5 12 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -250 V, ID = -2.7 A, RG = 25 Ω -- 12 35 ns tr Turn-On Rise Time -- 56 120 ns td(off) Turn-Off Delay Time -- 35 80 ns tf Turn-Off Fall Time -- 45 100 ns Qg Total Gate Charge VDS = -400 V, ID = -2.7 A, VGS = -10 V -- 18 23 nC Qgs Gate-Source Charge -- 3.6 -- nC Qgd Gate-Drain Charge -- 9.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -2.7 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -10.8 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.7 A -- -- -5.0 V trr Reverse Recovery Time VGS = 0 V, IS = -2.7 A, dIF / dt = 100 A/µ s -- 270 -- ns Qrr Reverse Recovery Charge -- 1.5 -- µ C

Page 4

©2000 Fairchild Semiconductor International F Q B 3 P 5 0 / F Q I3 P 50 Rev. A, August 2000 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 V DS = -250V V DS = -100V V DS = -400V ※ Note : I D = -2.7 A -V G S , G at e- S ou rc e V ol ta ge [V ] Q G , Total Gate Charge [nC] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd ※ Notes : 1. V GS = 0 V 2. f = 1 MHzC rss C oss C iss C ap ac ita nc e [p F] V DS , Drain-Source Voltage [V] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 -1 10 0 10 1 150℃ ※ Notes : 1. V GS = 0V 2. 250μs Pulse Test 25℃ -I D R , R ev er se D ra in C ur re nt [ A ] -V SD , Source-Drain Voltage [V] 0 2 4 6 8 2 3 4 5 6 7 8 ※ Note : T J = 25℃ V GS = - 20V V GS = - 10V R D S (o n) [ Ω ], D ra in -S ou rc e O n- R es is ta nc e -I D , Drain Current [A] 2 4 6 8 10 10 -1 10 0 10 1 150℃ 25℃ -55℃ ※ Notes : 1. V DS = -50V 2. 250μs Pulse Test -I D , D ra in C ur re nt [ A ] -V GS , Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 V GS Top : -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ -I D , D ra in C ur re nt [A ] -V DS , Drain-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

Page 5

©2000 Fairchild Semiconductor International F Q B 3 P 5 0 / F Q I3 P 5 0 Rev. A, August 2000 1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1 1 0 -2 1 0 -1 1 0 0 ※ N o te s : 1 . Z θ J C ( t ) = 1 .4 7 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 / t 2 3 . T J M - T C = P D M * Z θ J C ( t ) s in g le p u ls e D = 0 .5 0 .0 2 0 .2 0 .0 5 0 .1 0 .0 1 Z θ J C(t ), T h e rm a l R e s p o n s e t 1 , S q u a re W a v e P u ls e D u ra t io n [s e c ] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -I D , D ra in C ur re nt [A ] T C , Case Temperature [℃] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 DC 10 ms 1 ms 100 µ s Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse -I D , D ra in C ur re nt [A ] -V DS , Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 ※ Notes : 1. V GS = -10 V 2. I D = -1.35 A R D S (O N ) , ( N or m al iz ed ) D ra in -S ou rc e O n- R es is ta nc e T J , Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※ Notes : 1. V GS = 0 V 2. I D = -250 μA -B V D SS , ( N or m al iz ed ) D ra in -S ou rc e Br ea kd ow n Vo lta ge T J , Junction Temperature [ o C] Typical Characteristics (Continued) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature Figure 11. Transient Thermal Response Curve t1 PDM t2

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©2000 Fairchild Semiconductor International F Q B 3 P 5 0 / F Q I3 P 50 Rev. A, August 2000 Charge VGS -10V Qg Qgs Qgd -3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT VDS VGS 10% 90% td(on) tr t on t off td(off) tfVDD -10V VDS RL DUT RG VGS EAS = L IAS 2---- 2 1 -------------------- BVDSS - VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time -10V DUT RG L I D t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

Page 7

©2000 Fairchild Semiconductor International F Q B 3 P 5 0 / F Q I3 P 5 0 Rev. A, August 2000 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS + _ Driver RG Compliment of DUT (N-Channel) VGS • dv/dt controlled by RG • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width Gate Pulse Period --------------------------

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©2000 Fairchild Semiconductor International F Q B 3 P 5 0 / F Q I3 P 50 Rev. A, August 2000 Package Dimensions 10.00 ± 0.20 10.00 ± 0.20 (8.00) (4.40) 1.27 ± 0.10 0.80 ± 0.10 0.80 ± 0.10 (2XR0.45) 9.90 ± 0.20 4.50 ± 0.20 0.10 ± 0.15 2.40 ± 0.20 2 .5 4 ± 0 .3 0 1 5 .3 0 ± 0 .3 0 9 .2 0 ± 0 .2 0 4 .9 0 ± 0 .2 0 1 .4 0 ± 0 .2 0 2 .0 0 ± 0 .1 0 (0 .7 5 ) (1 .7 5 ) (7 .2 0 ) 0°~ 3° 1 .2 0 ± 0 .2 0 9 .2 0 ± 0 .2 0 1 5 .3 0 ± 0 .3 0 4 .9 0 ± 0 .2 0 (0 .4 0 ) 2.54 TYP 2.54 TYP 1.30 +0.10 –0.05 0.50 +0.10 –0.05 D2PAK

Page 9

©2000 Fairchild Semiconductor International F Q B 3 P 5 0 / F Q I3 P 5 0 Rev. A, August 2000 Package Dimensions (Continued) 9.90 ± 0.20 2.40 ± 0.20 4.50 ± 0.20 1.27 ± 0.10 1.47 ± 0.10 (45° ) 0.80 ± 0.10 10.00 ± 0.20 2.54 TYP2.54 TYP 1 3 .0 8 ± 0 .2 0 9 .2 0 ± 0 .2 0 1 .2 0 ± 0 .2 0 1 0 .0 8 ± 0 .2 0 M A X 1 3 .4 0 M A X 3 .0 0 (0 .4 0 ) (1 .4 6 ) (0 .9 4 ) 1.30 +0.10 –0.05 0.50 +0.10 –0.05 I2PAK

FQI3P50TU Reviews

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Ren*****Gray

July 18, 2020

Rec today in good order & condition . Thanks for speedy delivery.Regards.

Angi*****llins

July 14, 2020

Every little component you can always find in here, and good suggestion for relative times too.

Cata***** Borde

July 11, 2020

Easier, quicker and cheaper to buy this whole assortment than to get just the few I needed from an electronics store.

Aad***** Bava

July 9, 2020

I got a very helpful customer service here. Definitely will order my electronics needs again.

Eri*****Ruiz

July 6, 2020

Excellent ease of using site both in finding products and ordering! Also shipping charges reasonable.

Lia*****erry

July 3, 2020

All current moves in switching devices with the proper selection of amp rating capability. I chose these to do a job that had to handle only 1/3 of it's rated capacity. So they were the perfect choice. To date they work as expected; perfectly.

Mac*****ims

June 24, 2020

Received the parts, and all parts are in tight packaging without any problems, professional seller.

Vivienne*****ramanian

June 17, 2020

Great item and excellent seller! Would highly recommend. Thank you. Trustworthy

Bian*****orton

June 13, 2020

Itams as described Fast and cheap shipping.

Moll*****pkins

June 10, 2020

Most of the reviews for this product were positive so I took a chance.

FQI3P50TU Guarantees

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We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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