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FQI9N08TU

FQI9N08TU

FQI9N08TU

For Reference Only

Part Number FQI9N08TU
Manufacturer Fairchild/ON Semiconductor
Description MOSFET N-CH 80V 9.3A I2PAK
Datasheet FQI9N08TU Datasheet
Package TO-262-3 Long Leads, I2Pak, TO-262AA
In Stock 372 piece(s)
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FQI9N08TU

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FQI9N08TU Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FQI9N08TU Datasheet
PackageTO-262-3 Long Leads, I2Pak, TO-262AA
SeriesQFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25��C9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds250pF @ 25V
Vgs (Max)��25V
Power Dissipation (Max)3.75W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs210 mOhm @ 4.65A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA

FQI9N08TU Datasheet

Page 1

Page 2

©2000 Fairchild Semiconductor International December 2000 Rev. A2, December 2000 F Q B 9 N 0 8 / F Q I9 N 0 8 QFETTM FQB9N08 / FQI9N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. Features • 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V • Low gate charge ( typical 5.9 nC) • Low Crss ( typical 13 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175° C maximum junction temperature rating ! " ! ! ! " " " Absolute Maximum Ratings TC = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQB9N08 / FQI9N08 Units VDSS Drain-Source Voltage 80 V ID Drain Current - Continuous (TC = 25°C) 9.3 A - Continuous (TC = 100°C) 6.57 A IDM Drain Current - Pulsed (Note 1) 37.2 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 55 mJ IAR Avalanche Current (Note 1) 9.3 A EAR Repetitive Avalanche Energy (Note 1) 4.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns PD Power Dissipation (TA = 25°C) * 3.75 W Power Dissipation (TC = 25°C) 40 W - Derate above 25°C 0.27 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 °C Symbol Parameter Typ Max Units Rθ JC Thermal Resistance, Junction-to-Case -- 3.75 °C/W Rθ JA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W Rθ JA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) S D G D2-PAK FQB Series I2-PAK FQI Series G S D G SD

Page 3

Rev. A2, December 2000 F Q B 9 N 0 8 / F Q I9 N 0 8 (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) ©2000 Fairchild Semiconductor International Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.87mH, IAS = 9.3A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 9.3A, di/dt ≤ 300A/µ s, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µ s, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µ A 80 -- -- V ∆ BVDSS / ∆ TJ Breakdown Voltage Temperature Coefficient ID = 250 µ A, Referenced to 25°C -- 0.08 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V -- -- 1 µ A VDS = 64 V, TC = 150°C -- -- 10 µ A IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µ A 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.65 A -- 0.16 0.21 Ω gFS Forward Transconductance VDS = 30 V, ID = 4.65 A -- 3.6 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 190 250 pF Coss Output Capacitance -- 70 90 pF Crss Reverse Transfer Capacitance -- 13 17 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 40 V, ID = 9.3 A, RG = 25 Ω -- 2.8 15 ns tr Turn-On Rise Time -- 28 65 ns td(off) Turn-Off Delay Time -- 9 28 ns tf Turn-Off Fall Time -- 17 45 ns Qg Total Gate Charge VDS = 64 V, ID = 9.3 A, VGS = 10 V -- 5.9 7.7 nC Qgs Gate-Source Charge -- 1.5 -- nC Qgd Gate-Drain Charge -- 2.6 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9.3 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 37.2 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.3 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 9.3 A, dIF / dt = 100 A/µ s -- 50 -- ns Qrr Reverse Recovery Charge -- 70 -- nC

Page 4

F Q B 9 N 0 8 / F Q I9 N 0 8 Rev. A2, December 2000©2000 Fairchild Semiconductor International 0 1 2 3 4 5 6 7 0 2 4 6 8 10 12 V DS = 40V V DS = 64V ※ Note : I D = 9.3A V G S , G at e- S ou rc e V ol ta ge [V ] Q G , Total Gate Charge [nC] 10 -1 10 0 10 1 0 100 200 300 400 500 C iss = C gs + C gd (C ds = shorted) Coss = Cds + Cgd C rss = C gd ※ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss C ap ac ita nc e [p F] V DS , Drain-Source Voltage [V] 10 -1 10 0 10 1 10 0 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V ※ Notes : 1. 250μs Pulse Test 2. T C = 25℃ I D , D ra in C ur re nt [A ] V DS , Drain-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 100 10 1 25℃175℃ ※ Notes : 1. V GS = 0V 2. 250μs Pulse Test I D R , R ev er se D ra in C ur re nt [ A ] V SD , Source-Drain Voltage [V] 0 4 8 12 16 20 24 0.0 0.2 0.4 0.6 0.8 1.0 ※ Note : T J = 25℃ V GS = 20V V GS = 10V R D S (o n) [ Ω ], D ra in -S ou rc e O n- R es is ta nc e I D , Drain Current [A] 2 4 6 8 10 10 -1 10 0 10 1 ※ Notes : 1. V DS = 30V 2. 250μs Pulse Test -55℃ 175℃ 25℃ I D , D ra in C ur re nt [ A ] V GS , Gate-Source Voltage [V]

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©2000 Fairchild Semiconductor International F Q B 9 N 0 8 / F Q I9 N 0 8 Rev. A2, December 2000 1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1 1 0 -1 1 0 0 ※ N o te s : 1 . Z θ J C ( t) = 3 .7 5 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 / t 2 3 . T J M - T C = P D M * Z θ J C ( t) s in g le p u ls e D = 0 .5 0 .0 2 0 .2 0 .0 5 0 .1 0 .0 1 Z θ J C(t ), T h e rm a l R e s p o n s e t 1 , S q u a re W a v e P u ls e D u ra t io n [ s e c ] 25 50 75 100 125 150 175 0 2 4 6 8 10 I D , D ra in C ur re nt [A ] T C , Case Temperature [℃] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 DC 10 ms 1 ms 100 µ s Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 175 o C 3. Single Pulse I D , D ra in C ur re nt [A ] V DS , Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = 10 V 2. ID = 4.65 A R D S (O N ) , ( N or m al iz ed ) D ra in -S ou rc e O n- R es is ta nc e T J , Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※ Notes : 1. V GS = 0 V 2. I D = 250 μA BV D SS , ( N or m al iz ed ) D ra in -S ou rc e Br ea kd ow n Vo lta ge T J , Junction Temperature [ o C] Typical Characteristics (Continued) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature Figure 11. Transient Thermal Response Curve t1 PDM t2

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F Q B 9 N 0 8 / F Q I9 N 0 8 Rev. A2, December 2000©2000 Fairchild Semiconductor International Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT VGS VDS 10% 90% td(on) tr t on t off td(off) tf VDD 10V VDS RL DUT RG VGS EAS = L IAS2----2 1 -------------------- BVDSS - VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG L I D t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

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©2000 Fairchild Semiconductor International F Q B 9 N 0 8 / F Q I9 N 0 8 Rev. A2, December 2000 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS + _ Driver RG Same Type as DUT VGS • dv/dt controlled by RG • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width Gate Pulse Period --------------------------

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F Q B 9 N 0 8 / F Q I9 N 0 8 Rev. A2, December 2000©2000 Fairchild Semiconductor International Package Dimensions 10.00 ± 0.20 10.00 ± 0.20 (8.00) (4.40) 1.27 ± 0.10 0.80 ± 0.10 0.80 ± 0.10 (2XR0.45) 9.90 ± 0.20 4.50 ± 0.20 0.10 ± 0.15 2.40 ± 0.20 2 .5 4 ± 0 .3 0 1 5 .3 0 ± 0 .3 0 9 .2 0 ± 0 .2 0 4 .9 0 ± 0 .2 0 1 .4 0 ± 0 .2 0 2 .0 0 ± 0 .1 0 (0 .7 5 ) (1 .7 5 ) (7 .2 0 ) 0°~ 3° 1 .2 0 ± 0 .2 0 9 .2 0 ± 0 .2 0 1 5 .3 0 ± 0 .3 0 4 .9 0 ± 0 .2 0 (0 .4 0 ) 2.54 TYP 2.54 TYP 1.30 +0.10 –0.05 0.50 +0.10 –0.05 D2PAK

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©2000 Fairchild Semiconductor International F Q B 9 N 0 8 / F Q I9 N 0 8 Rev. A2, December 2000 Package Dimensions (Continued) 9.90 ± 0.20 2.40 ± 0.20 4.50 ± 0.20 1.27 ± 0.10 1.47 ± 0.10 (45° ) 0.80 ± 0.10 10.00 ± 0.20 2.54 TYP2.54 TYP 1 3 .0 8 ± 0 .2 0 9 .2 0 ± 0 .2 0 1 .2 0 ± 0 .2 0 1 0 .0 8 ± 0 .2 0 M A X 1 3 .4 0 M A X 3 .0 0 (0 .4 0 ) (1 .4 6 ) (0 .9 4 ) 1.30 +0.10 –0.05 0.50 +0.10 –0.05 I2PAK

FQI9N08TU Reviews

Average User Rating
5 / 5 (98)
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January 6, 2020

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December 21, 2019

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November 14, 2019

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September 7, 2019

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August 7, 2019

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August 1, 2019

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July 28, 2019

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