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FQP33N10L

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FQP33N10L

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Part Number FQP33N10L
Manufacturer Fairchild/ON Semiconductor
Description MOSFET N-CH 100V 33A TO-220
Datasheet FQP33N10L Datasheet
Package TO-220-3
In Stock 1,354 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 25 - Jan 30 (Choose Expedited Shipping)
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Part Number # FQP33N10L (Transistors - FETs, MOSFETs - Single) is manufactured by Fairchild/ON Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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FQP33N10L Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FQP33N10LDatasheet
PackageTO-220-3
SeriesQFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds1630pF @ 25V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)127W (Tc)
Rds On (Max) @ Id, Vgs52 mOhm @ 16.5A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

FQP33N10L Datasheet

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©2000 Fairchild Semiconductor International September 2000 Rev. A, September 2000 F Q P 33 N 1 0 L QFETTM FQP33N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. Features • 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 70 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175° C maximum junction temperature rating Absolute Maximum Ratings TC = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQP33N10L Units VDSS Drain-Source Voltage 100 V ID Drain Current - Continuous (TC = 25°C) 33 A - Continuous (TC = 100°C) 23 A IDM Drain Current - Pulsed (Note 1) 132 A VGSS Gate-Source Voltage ± 20 V EAS Single Pulsed Avalanche Energy (Note 2) 430 mJ IAR Avalanche Current (Note 1) 33 A EAR Repetitive Avalanche Energy (Note 1) 12.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns PD Power Dissipation (TC = 25°C) 127 W - Derate above 25°C 0.85 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units Rθ JC Thermal Resistance, Junction-to-Case -- 1.18 °C/W Rθ CS Thermal Resistance, Case-to-Sink 0.5 -- °C/W Rθ JA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W ! " ! ! ! " " " S D G TO-220 FQP Series G SD

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Rev. A, September 2000 F Q P 3 3 N 1 0 L (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) ©2000 Fairchild Semiconductor International (Note 6) Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.59mH, IAS = 33A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 33A, di/dt ≤ 300A/µ s, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µ s, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µ A 100 -- -- V ∆ BVDSS / ∆ TJ Breakdown Voltage Temperature Coefficient ID = 250 µ A, Referenced to 25°C -- 0.09 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V -- -- 1 µ A VDS = 80 V, TC = 150°C -- -- 10 µ A IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µ A 1.0 -- 2.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 16.5 A VGS = 5 V, ID = 16.5 A -- 0.039 0.043 0.052 0.055 Ω gFS Forward Transconductance VDS = 30 V, ID = 16.5 A -- 27 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1250 1630 pF Coss Output Capacitance -- 305 400 pF Crss Reverse Transfer Capacitance -- 70 90 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 50 V, ID = 33 A, RG = 25 Ω -- 17 45 ns tr Turn-On Rise Time -- 470 950 ns td(off) Turn-Off Delay Time -- 70 150 ns tf Turn-Off Fall Time -- 120 250 ns Qg Total Gate Charge VDS = 80 V, ID = 33 A, VGS = 5 V -- 30 40 nC Qgs Gate-Source Charge -- 4.7 -- nC Qgd Gate-Drain Charge -- 16 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 33 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 132 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 33 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 33 A, dIF / dt = 100 A/µ s -- 90 -- ns Qrr Reverse Recovery Charge -- 0.26 -- µ C

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F Q P 33 N 1 0 L Rev. A, September 2000©2000 Fairchild Semiconductor International 0 10 20 30 40 50 0 2 4 6 8 10 12 V DS = 50V V DS = 80V ※ Note : I D = 33A V G S , G at e- S ou rc e V ol ta ge [V ] Q G , Total Gate Charge [nC] 10 -1 10 0 10 1 0 600 1200 1800 2400 3000 3600 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd ※ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss C ap ac ita nc e [p F] V DS , Drain-Source Voltage [V] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 10 2 175℃ ※ Notes : 1. V GS = 0V 2. 250μs Pulse Test 25℃ I D R , R ev er se D ra in C ur re nt [A ] V SD , Source-Drain voltage [V] 0 30 60 90 120 0.00 0.04 0.08 0.12 0.16 0.20 V GS = 10V V GS = 5V ※ Note : T J = 25℃ R D S (O N ) [Ω ], D ra in -S ou rc e O n- R es is ta nc e I D , Drain Current [A] 0 2 4 6 8 10 10 -1 10 0 10 1 10 2 175℃ 25℃ -55℃ ※ Notes : 1. V DS = 30V 2. 250μs Pulse Test I D , D ra in C ur re nt [A ] V GS , Gate-Source Voltage [V] 10 -1 10 0 10 1 10 0 10 1 10 2 VGS Top : 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ I D , D ra in C ur re nt [A ] V DS , Drain-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

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©2000 Fairchild Semiconductor International F Q P 3 3 N 1 0 L Rev. A, September 2000 1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 1 0 0 1 0 1 1 0 - 2 1 0 - 1 1 0 0 ※ N o t e s : 1 . Z θ J C( t ) = 1 . 1 8 ℃ /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) s i n g l e p u l s e D = 0 . 5 0 .0 2 0 .2 0 .0 5 0 .1 0 .0 1 Z θ J C(t ), T h e rm a l R e s p o n s e t 1 , S q u a r e W a v e P u ls e D u r a t i o n [ s e c ] 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 I D , D ra in C ur re nt [A ] T C , Case Temperature [℃] 10 0 10 1 10 2 10 0 10 1 10 2 DC 10 ms 1 ms 100 µ s Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 175 o C 3. Single Pulse I D , D ra in C ur re nt [A ] V DS , Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = 10 V 2. I D = 16.5 A R D S( O N ) , ( N or m al iz ed ) D ra in -S ou rc e O n- R es is ta nc e T J , Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※ Notes : 1. V GS = 0 V 2. I D = 250 μA BV D SS , ( N or m al iz ed ) D ra in -S ou rc e Br ea kd ow n Vo lta ge T J , Junction Temperature [ o C] Typical Characteristics (Continued) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature Figure 11. Transient Thermal Response Curve t1 PDM t2

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F Q P 33 N 1 0 L Rev. A, September 2000©2000 Fairchild Semiconductor International Charge VGS 5V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT VGS VDS 10% 90% td(on) tr t on t off td(off) tf VDD 5V VDS RL DUT RG VGS EAS = L IAS 2---- 2 1 -------------------- BVDSS - VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG L I D t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

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©2000 Fairchild Semiconductor International F Q P 3 3 N 1 0 L Rev. A, September 2000 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS + _ Driver RG Same Type as DUT VGS • dv/dt controlled by RG • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width Gate Pulse Period --------------------------

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F Q P 33 N 1 0 L Rev. A, September 2000©2000 Fairchild Semiconductor International Mechanical Dimensions Dimensions in Millimeters TO - 220

FQP33N10L Reviews

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Aman*****isher

December 25, 2020

Quality made product satisfied with my purchase. Thanks.

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December 24, 2020

Very much appreciate the thoughtful system to hold multiple orders, including back ordered items, can be shipped at once rather than incremental shipments.

FQP33N10L Guarantees

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