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FQPF10N60CF

hot FQPF10N60CF

FQPF10N60CF

For Reference Only

Part Number FQPF10N60CF
Manufacturer Fairchild/ON Semiconductor
Description MOSFET N-CH 600V 9A TO-220F
Datasheet FQPF10N60CF Datasheet
Package TO-220-3 Full Pack
In Stock 397 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 20 - Jan 25 (Choose Expedited Shipping)
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FQPF10N60CF

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FQPF10N60CF Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FQPF10N60CF Datasheet
PackageTO-220-3 Full Pack
SeriesFRFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25��C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2040pF @ 25V
Vgs (Max)��30V
Power Dissipation (Max)50W (Tc)
Rds On (Max) @ Id, Vgs800 mOhm @ 4.5A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

FQPF10N60CF Datasheet

Page 1

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©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQP10N60CF / FQPF10N60CF Rev. A F Q P 10N 60C F / F Q P F 10N 60C F 600V N -C h an n el M O S F E T February 2007 FRFETTM FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features • 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V • Low gate charge ( typical 44 nC) • Low Crss ( typical 18 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi- ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology. Absolute Maximum Ratings * Drain current limited by maximum junction temperature. Thermal Characteristics TO-220 FQP SeriesG SD TO-220F FQPF Series G SD D G S Symbol Parameter FQP10N60CF FQPF10N60CF Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 9.0 9.0 * A - Continuous (TC = 100°C) 5.7 5.7 * A IDM Drain Current - Pulsed (Note 1) 36 36 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 583 mJ IAR Avalanche Current (Note 1) 9.0 A EAR Repetitive Avalanche Energy (Note 1) 16.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 169 50 W - Derate above 25°C 1.35 0.4 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQP10N60CF FQPF10N60CF Units RθJC Thermal Resistance, Junction-to-Case 0.74 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

Page 3

2 www.fairchildsemi.com FQP10N60CF / FQPF10N60CF Rev. A F Q P 10N 60C F / F Q P F 10N 60C F 600V N -C h an n el M O S F E T Package Marking and Ordering Information Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 13.2mH, IAS = 9.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 9.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Device Marking Device Package Reel Size Tape Width Quantity FQP10N60CF FQP10N60CF TO-220 -- -- 50 FQPF10N60CF FQPF10N60CF TO-220F -- -- 50 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 10 µA VDS = 480 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.5 A -- 0.61 0.8 Ω gFS Forward Transconductance VDS = 40 V, ID = 4.5 A (Note 4) -- 8.0 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1570 2040 pF Coss Output Capacitance -- 166 215 pF Crss Reverse Transfer Capacitance -- 18 24 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300 V, ID = 9.0A, RG = 25 Ω (Note 4, 5) -- 23 55 ns tr Turn-On Rise Time -- 69 150 ns td(off) Turn-Off Delay Time -- 144 300 ns tf Turn-Off Fall Time -- 77 165 ns Qg Total Gate Charge VDS = 480 V, ID = 9.0A, VGS = 10 V (Note 4, 5) -- 44 57 nC Qgs Gate-Source Charge -- 6.7 -- nC Qgd Gate-Drain Charge -- 18.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.0 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 9.0A, dIF / dt = 100 A/µs (Note 4) -- 90 -- ns Qrr Reverse Recovery Charge -- 0.3 -- µC

Page 4

3 www.fairchildsemi.com FQP10N60CF / FQPF10N60CF Rev. A F Q P 10N 60C F / F Q P F 10N 60C F 600V N -C h an n el M O S F E T Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperatue Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 100 101 10-1 100 101 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V * Notes : 1. 250µs Pulse Test 2. T C = 25°C I D , D ra in C ur re nt [ A ] V DS , Drain-Source Voltage [V] 2 4 6 8 10 10 -1 100 101 150°C 25°C -55°C * Notes : 1. V DS = 40V 2. 250µs Pulse Test I D , D ra in C ur re nt [ A ] V GS , Gate-Source Voltage [V] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10-1 100 101 150°C * Notes : 1. V GS = 0V 2. 250µs Pulse Test 25°C I D R , R ev er se D ra in C ur re nt [ A ] V SD , Source-Drain voltage [V] 0 5 10 15 20 25 30 35 0.0 0.5 1.0 1.5 2.0 V GS = 20V V GS = 10V * Note : T J = 25°C R D S (O N ) [ Ω ], D ra in -S ou rc e O n- R es is ta nc e I D , Drain Current [A] 10-1 100 101 0 500 1000 1500 2000 2500 3000 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd * Notes ; 1. V GS = 0 V 2. f = 1 MHzC rss C oss C iss C a pa ci ta n ce [ p F ] V DS , Drain-Source Voltage [V] 0 10 20 30 40 50 0 2 4 6 8 10 12 V DS = 300V V DS = 120V V DS = 480V * Note : I D = 9.0A V G S , G at e- S o ur ce V ol ta g e [ V ] Q G , Total Gate Charge [nC]

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4 www.fairchildsemi.com FQP10N60CF / FQPF10N60CF Rev. A F Q P 10N 60C F / F Q P F 10N 60C F 600V N -C h an n el M O S F E T Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area for FQP10N60C for FQPF10N60C Figure 10. Maximum Drain Current vs. Case Temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * Notes : 1. V GS = 0 V 2. I D = 250µA B V D S S , (N or m al iz ed ) D ra in -S ou rc e B re ak do w n V ol ta ge T J , Junction Temperature [°C] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * Notes : 1. V GS = 10 V 2. I D = 4.5 A R D S (O N ), (N or m al iz ed ) D ra in -S ou rc e O n- R es is ta nc e T J , Junction Temperature [°C] 100 101 102 103 10-2 10-1 100 101 102 DC 100ms 10ms 1ms 100 µs 10 µs Operation in This Area is Limited by R DS(on) * Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse I D , D ra in C ur re n t [ A ] V DS , Drain-SourceVoltage[V] 100 101 102 103 10-2 10-1 100 101 102 DC 100ms 10ms 1ms 100 µs 10 µs Operation in This Area is Limited by R DS(on) * Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse I D , D ra in C ur re n t [ A ] V DS , Drain-SourceVoltage[V] 25 50 75 100 125 150 0 2 4 6 8 10 I D , D ra in C u rr en t [A ] T C , Case Temperature [oC]

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5 www.fairchildsemi.com FQP10N60CF / FQPF10N60CF Rev. A F Q P 10N 60C F / F Q P F 10N 60C F 600V N -C h an n el M O S F E T Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FQP10N60CF Figure 11-2. Transient Thermal Response Curve for FQPF10N60CF 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 * Notes : 1. Z ? JC (t) = 0.74 0C/W 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z ? JC (t)single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 Z ? JC (t ), T he rm al R es po ns e t 1 , Square Wave Pulse Duration [sec] t1 PDM t2 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 * Notes : 1. Z ? JC (t) = 2.5 0C/W 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z ? JC (t)single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 Z ? JC (t ), T he rm al R es po ns e t 1 , Square Wave Pulse Duration [sec] t1 PDM t2

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6 www.fairchildsemi.com FQP10N60CF / FQPF10N60CF Rev. A F Q P 10N 60C F / F Q P F 10N 60C F 600V N -C h an n el M O S F E T Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

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7 www.fairchildsemi.com FQP10N60CF / FQPF10N60CF Rev. A F Q P 10N 60C F / F Q P F 10N 60C F 600V N -C h an n el M O S F E T Peak Diode Recovery dv/dt Test Circuit & Waveforms

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8 www.fairchildsemi.com FQP10N60CF / FQPF10N60CF Rev. A F Q P 10N 60C F / F Q P F 10N 60C F 600V N -C h an n el M O S F E T Mechanical Dimensions 4.50 ±0.209.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 2. 80 ± 0. 10 15 .9 0 ±0 .2 0 10 .0 8 ±0 .3 0 18 .9 5M A X . (1 .7 0) (3 .7 0) (3 .0 0) (1 .4 6) (1 .0 0) (45°) 9. 20 ± 0. 20 13 .0 8 ±0 .2 0 1. 30 ± 0. 10 1.30 +0.10 –0.05 0.50 +0.10 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] TO-220 Dimensions in Millimeters

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9 www.fairchildsemi.com FQP10N60CF / FQPF10N60CF Rev. A F Q P 10N 60C F / F Q P F 10N 60C F 600V N -C h an n el M O S F E T Mechanical Dimensions (Continued) (7.00) (0.70) MAX1.47 (30°) #1 3. 30 ± 0. 10 15 .8 0 ±0 .2 0 15 .8 7 ±0 .2 0 6. 68 ± 0. 20 9. 75 ± 0. 30 4. 70 ± 0. 20 10.16 ±0.20 (1.00x45°) 2.54 ±0.20 0.80 ±0.10 9.40 ±0.20 2.76 ±0.20 0.35 ±0.10 ø3.18 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 0.50 +0.10 –0.05 TO-220F Dimensions in Millimeters

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