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Part Number FQPF27N25
Manufacturer Fairchild/ON Semiconductor
Description MOSFET N-CH 250V 14A TO-220F
Datasheet FQPF27N25 Datasheet
Package TO-220-3 Full Pack
In Stock 340 piece(s)
Unit Price $ 1.8400 *
Lead Time Can Ship Immediately
Estimated Delivery Time Sep 24 - Sep 29 (Choose Expedited Shipping)
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Part Number # FQPF27N25 (Transistors - FETs, MOSFETs - Single) is manufactured by Fairchild/ON Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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FQPF27N25 Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FQPF27N25Datasheet
PackageTO-220-3 Full Pack
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2450pF @ 25V
Vgs (Max)��30V
FET Feature-
Power Dissipation (Max)55W (Tc)
Rds On (Max) @ Id, Vgs110 mOhm @ 7A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

FQPF27N25 Datasheet

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To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at Please email any questions regarding the system integration to Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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November 2013 F Q P F 27N 25 — N -C h an n el Q F E T ® M O S F E T ©2000 Fairchild Semiconductor Corporation FQPF27N25 Rev. C1 www.fairchildsemi.com1 FQPF27N25 N-Channel QFET® MOSFET 250 V, 14 A, 110 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 14 A, 250 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V, ID = 7 A • Low Gate Charge (Typ. 50 nC) • Low Crss (Typ. 45 pF) • 100% Avalanche Tested TO-220F G DS G S D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Thermal Characteristics Symbol Parameter FQPF27N25 Unit VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 14 A - Continuous (TC = 100°C) 8.9 A IDM Drain Current - Pulsed (Note 1) 56 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 600 mJ IAR Avalanche Current (Note 1) 14 A EAR Repetitive Avalanche Energy (Note 1) 5.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25°C) 55 W - Derate above 25°C 0.44 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds 300 °C Symbol Parameter FQPF27N25 Unit RθJC Thermal Resistance, Junction-to-Case, Max. 2.27 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W

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F Q P F 27N 2 5 — N -C h an n el Q F E T ® M O S F E T ©2000 Fairchild Semiconductor Corporation FQPF27N25 Rev. C1 www.fairchildsemi.com2 Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FQPF27N25 FQPF27N25 TO-220F Tube N/A N/A 50 units Electrical Characteristics TC = 25°C unless otherwise noted. Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 4.9 mH, IAS = 14 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 27 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 250 -- -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.29 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- -- 1 μA VDS = 200 V, TC = 125°C -- -- 10 μA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 7.0 A -- 0.083 0.11 Ω gFS Forward Transconductance VDS = 50 V, ID = 7.0 A -- 15 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1900 2450 pF Coss Output Capacitance -- 360 470 pF Crss Reverse Transfer Capacitance -- 45 60 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 125 V, ID = 27 A, RG = 25 Ω (Note 4) -- 32 75 ns tr Turn-On Rise Time -- 270 550 ns td(off) Turn-Off Delay Time -- 80 170 ns tf Turn-Off Fall Time -- 120 250 ns Qg Total Gate Charge VDS = 200 V, ID = 27 A, VGS = 10 V (Note 4) -- 50 65 nC Qgs Gate-Source Charge -- 12.5 -- nC Qgd Gate-Drain Charge -- 26 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 14 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 56 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 14 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 27 A, dIF / dt = 100 A/μs -- 220 -- ns Qrr Reverse Recovery Charge -- 1.8 -- μC

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F Q P F 27N 2 5 — N -C h an n el Q F E T ® M O S F E T ©2000 Fairchild Semiconductor Corporation FQPF27N25 Rev. C1 www.fairchildsemi.com3 Typical Characteristics 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 -1 10 0 10 1 25℃150℃ ※ Note : 1. V GS = 0V 2. 250μs Pulse Test I D R , R ev e rs e D ra in C ur re nt [A ] V SD , Source-Drain Voltage [V] 2 4 6 8 10 10 -1 10 0 10 1 ※ Notes : 1. V DS = 50V 2. 250μs Pulse Test -55℃ 150℃ 25℃ I D , D ra in C u rr en t [ A ] V GS , Gate-Source Voltage [V] 10-1 100 101 10 -1 10 0 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ※ Notes : 1. 250μs Pulse Test 2. T C = 25℃ I D , D ra in C u rr e nt [ A ] V DS , Drain-Source Voltage [V] 0 10 20 30 40 50 60 0 2 4 6 8 10 12 V DS = 125V V DS = 50V V DS = 200V ※ Note : I D = 27 A V G S , G at e -S o ur ce V ol ta g e [V ] Q G , Total Gate Charge [nC] 10-1 100 101 0 800 1600 2400 3200 4000 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd ※ Notes : 1. V GS = 0 V 2. f = 1 MHzC rss Coss Ciss C ap ac ita nc e [p F ] V DS , Drain-Source Voltage [V] 0 30 60 90 120 0.0 0.1 0.2 0.3 0.4 0.5 V GS = 20V V GS = 10V ※ Note : T J = 25℃ R D S (O N ) [ Ω ], D ra in -S o ur ce O n -R e si st an ce I D , Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

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F Q P F 27N 2 5 — N -C h an n el Q F E T ® M O S F E T ©2000 Fairchild Semiconductor Corporation FQPF27N25 Rev. C1 www.fairchildsemi.com4 Typical Characteristics (continued) 1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1 1 0 -2 1 0 -1 1 0 0 ※ N o te s : 1 . Z θ J C ( t ) = 2 .2 7 /W M a x .℃ 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t ) s in g le p u ls e D = 0 .5 0 .0 2 0 .2 0 .0 5 0 .1 0 .0 1 Z θ JC (t ), T he rm al R es po n se t 1 , S q u a re W a v e P u ls e D u ra t io n [s e c ] 25 50 75 100 125 150 0 3 6 9 12 15 I D , D ra in C ur re nt [ A ] T C , Case Temperature [ ]℃ 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 1 ms DC 100 ms 10 ms 100 μs Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse I D , D ra in C ur re n t [ A ] V DS , Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = 10 V 2. I D = 13.5 A R D S (O N ), (N or m al iz ed ) D ra in -S ou rc e O n- R es is ta nc e T J , Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※ Notes : 1. V GS = 0 V 2. I D = 250 μA B V D S S , ( N or m al iz ed ) D ra in -S ou rc e B re ak do w n V ol ta g e T J , Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature Figure 11. Transient Thermal Response Curve t1 PDM t2 Z θJ C (t ), T he rm al R e sp on se [o C /W ]

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F Q P F 27N 2 5 — N -C h an n el Q F E T ® M O S F E T ©2000 Fairchild Semiconductor Corporation FQPF27N25 Rev. C1 www.fairchildsemi.com5 Figure 12. Gate Charge Test Circuit & Waveform Figure 13. Resistive Switching Test Circuit & Waveforms Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms VGS VDS 10% 90% td(on) tr t on t off td(off) tf VDD 10V VDS RL DUT RG VGS VGS Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT EAS = L IAS2----2 1 -------------------- BVDSS - VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG L I D t p VGS IG = const.

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F Q P F 27N 2 5 — N -C h an n el Q F E T ® M O S F E T ©2000 Fairchild Semiconductor Corporation FQPF27N25 Rev. C1 www.fairchildsemi.com6 Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS + _ Driver RG Same Type as DUT VGS • dv/dt controlled by RG • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width Gate Pulse Period --------------------------

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F Q P F 27N 25 — N -C h an n e l Q F E T ® M O S F E T ©2000 Fairchild Semiconductor Corporation FQPF27N25 Rev. C1 www.fairchildsemi.com7 Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

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F Q P F 27N 25 — N -C h an n el Q F E T ® M O S F E T TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms AccuPower™ AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET® Global Power ResourceSM GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ mWSaver® OptoHiT™ OPTOLOGIC® OPTOPLANAR® PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM® STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ ®* TinyBoost® TinyBuck® TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT®* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ ® ™ Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev. I66 tm ® ©2000 Fairchild Semiconductor Corporation FQPF27N25 Rev. C1 www.fairchildsemi.com8

FQPF27N25 Reviews

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August 21, 2020

It gives you a good quality product, with a great variety.. I will for sure order this set again when i start to run low


August 9, 2020

Very good contact, well packed, hope to buy from you again.


August 7, 2020

Quality electronic components plus fast response.Thank you.


August 4, 2020

Awesome components selection and availability. Ordering process is easy. They don't spam me after the purchase.


July 25, 2020



July 24, 2020



July 22, 2020

Excellent Seller, Great Products, Fast Reliable Service.


July 16, 2020

Arrived safely. All OK. Thanks


July 12, 2020

I recently became very interested in electronics and I have used several of them. They work great.


July 9, 2020

I always enjoy shopping with Heisener, never makes a mistake, most reliable, and no long waiting for deliveries.

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