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FSBB15CH60D

hot FSBB15CH60D

FSBB15CH60D

For Reference Only

Part Number FSBB15CH60D
Manufacturer Fairchild/ON Semiconductor
Description MODULE SPM 600V 15A SPMCC
Datasheet FSBB15CH60D Datasheet
Package 27-PowerDIP Module (1.205", 30.60mm)
In Stock 298 piece(s)
Unit Price $ 20.65 *
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FSBB15CH60D Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Power Driver Modules
Datasheet FSBB15CH60D Datasheet
Package27-PowerDIP Module (1.205", 30.60mm)
SeriesMotion SPM? 3
TypeIGBT
Configuration3 Phase Inverter
Current15A
Voltage600V
Voltage - Isolation2500Vrms
Package / Case27-PowerDIP Module (1.205", 30.60mm)

FSBB15CH60D Datasheet

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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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©2015 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FSBB15CH60D Rev. 1.0 August 2015 F S B B 15C H 60D M o tio n S P M ® 3 S eries FSBB15CH60D Motion SPM® 3 Series Features • UL Certified No. E209204 (UL1557) • 600 V - 15 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection • Low-Loss, Short-Circuit Rated IGBTs • Very Low Thermal Resistance Using Al2O3 DBC Substrate • Built-In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout • Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing • Single-Grounded Power Supply • LVIC Temperature-Sensing Built-In for Temperature Monitoring • Isolation Rating: 2500 Vrms / 1 min. Applications • Motion Control - Home Appliance / Industrial Motor Related Resources • AN-9044 - Motion SPM® 3 Series Users Guide General Description FSBB15CH60D is an advanced Motion SPM® 3 module providing a fully-featured, high-performance inverter output stage for AC Induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features includ- ing under-voltage lockouts, over-current shutdown, thermal monitoring of drive IC, and fault reporting. The built-in, high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms. Package Marking and Ordering Information Figure 1. Package Overview Device Device Marking Package Packing Type Quantity FSBB15CH60D FSBB15CH60D SPMCC-027 Rail 10

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©2015 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FSBB15CH60D Rev. 1.0 F S B B 15C H 60D M o tio n S P M ® 3 S eries Integrated Power Functions • 600 V - 15 A IGBT inverter for three-phase DC / AC power conversion (Please refer to Figure 3) Integrated Drive, Protection and System Control Functions • For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting control circuit Under-Voltage Lock-Out Protection (UVLO) Note: Available bootstrap circuit example is given in Figures 5 and 14. • For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP) control supply circuit Under-Voltage Lock-Out Protection (UVLO) • Fault signaling: corresponding to UVLO (low-side supply) and SC faults • Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input Pin Configuration Figure 2. Top View

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©2015 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FSBB15CH60D Rev. 1.0 F S B B 15C H 60D M o tio n S P M ® 3 S eries Pin Descriptions Pin Number Pin Name Pin Description 1 VCC(L) Low-Side Common Bias Voltage for IC and IGBTs Driving 2 COM Common Supply Ground 3 IN(UL) Signal Input for Low-Side U-Phase 4 IN(VL) Signal Input for Low-Side V-Phase 5 IN(WL) Signal Input for Low-Side W-Phase 6 VFO Fault Output 7 VTS Output for LVIC Temperature Sensing Voltage Output 8 CSC Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input 9 IN(UH) Signal Input for High-Side U-Phase 10 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving 11 VB(U) High-Side Bias Voltage for U-Phase IGBT Driving 12 VS(U) High-Side Bias Voltage Ground for U-Phase IGBT Driving 13 IN(VH) Signal Input for High-Side V-Phase 14 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving 15 VB(V) High-Side Bias Voltage for V-Phase IGBT Driving 16 VS(V) High-Side Bias Voltage Ground for V Phase IGBT Driving 17 IN(WH) Signal Input for High-Side W-Phase 18 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving 19 VB(W) High-Side Bias Voltage for W-Phase IGBT Driving 20 VS(W) High-Side Bias Voltage Ground for W-Phase IGBT Driving 21 NU Negative DC-Link Input for U-Phase 22 NV Negative DC-Link Input for V-Phase 23 NW Negative DC-Link Input for W-Phase 24 U Output for U-Phase 25 V Output for V-Phase 26 W Output for W-Phase 27 P Positive DC-Link Input

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©2015 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FSBB15CH60D Rev. 1.0 F S B B 15C H 60D M o tio n S P M ® 3 S eries Internal Equivalent Circuit and Input/Output Pins Figure 3. Internal Block Diagram Notes: 1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT, and one control IC. It has gate drive and protection functions. 2. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals. 3. Inverter high-side is composed of three IGBTs, freewheeling diodes, and three drive ICs for each IGBT. COM VCC IN IN IN VFO VTS CSC OUT OUT OUT NU (21) NV (22) NW (23) U (24) V (25) W (26) P (27) (20) VS ( W ) (19) VB ( W ) (16) VS (V ) (15) VB ( V) (8) CS C (7) VT S (6) VF O (5) IN(WL ) (4) IN(VL) (3) IN(UL ) (2) COM (1) VCC( L) VCC VB OUT COM VSIN VB VS OUT IN COM VCC VCC VB OUT COM VSIN (18) VCC (H) (17) IN(WH ) (14) VCC (H) (13) IN( VH) (12) VS ( U) (11) VB ( U) (10) VCC (H) (9) IN( UH)

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©2015 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FSBB15CH60D Rev. 1.0 F S B B 15C H 60D M o tio n S P M ® 3 S eries Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified) Inverter Part Control Part Bootstrap Diode Part Total System Thermal Resistance Note: 4. These values had been made an acquisition by the calculation considered to design factor. 5. For the measurement point of case temperature (TC), please refer to Figure 2. Symbol Parameter Conditions Rating Unit VPN Supply Voltage Applied between P - NU, NV, NW 450 V VPN(Surge) Supply Voltage (Surge) Applied between P - NU, NV, NW 500 V VCES Collector - Emitter Voltage 600 V ± IC Each IGBT Collector Current TC = 25°C, TJ 150°C (Note 4) 15 A ± ICP Each IGBT Collector Current (Peak) TC = 25°C, TJ  150°C, Under 1 ms Pulse Width (Note 4) 30 A PC Collector Dissipation TC = 25°C per One Chip (Note 4) 58 W TJ Operating Junction Temperature -40 ~ 150 °C Symbol Parameter Conditions Rating Unit VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 20 V VBS High-Side Control Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) 20 V VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM -0.3 ~ VCC+0.3 V VFO Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VCC+0.3 V IFO Fault Output Current Sink Current at VFO pin 2 mA VSC Current Sensing Input Voltage Applied between CSC - COM -0.3 ~ VCC+0.3 V Symbol Parameter Conditions Rating Unit VRRM Maximum Repetitive Reverse Voltage 600 V IF Forward Current TC = 25°C, TJ 150°C (Note 4) 0.5 A IFP Forward Current (Peak) TC = 25°C, TJ  150°C, Under 1 ms Pulse Width (Note 4) 2.0 A TJ Operating Junction Temperature -40 ~ 150 °C Symbol Parameter Conditions Rating Unit VPN(PROT) Self Protection Supply Voltage Limit (Short Circuit Protection Capability) VCC = VBS = 13.5 ~ 16.5 V, TJ = 150°C, Non-repetitive, < 2 s 400 V TC Module Case Operation Temperature See Figure 2 -40 ~ 125 °C TSTG Storage Temperature -40 ~ 125 °C VISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 minute, Connection Pins to Heat Sink Plate 2500 Vrms Symbol Parameter Conditions Min. Typ. Max. Unit Rth(j-c)Q Junction to Case Thermal Resistance (Note 5) Inverter IGBT part (per 1 / 6 module) - - 2.15 °C / W Rth(j-c)F Inverter FWD part (per 1 / 6 module) - - 2.85 °C / W

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©2015 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FSBB15CH60D Rev. 1.0 F S B B 15C H 60D M o tio n S P M ® 3 S eries Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Inverter Part Note: 6. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. Figure 4. Switching Time Definition Symbol Parameter Conditions Min. Typ. Max. Unit VCE(SAT) Collector - Emitter Saturation Voltage VCC = VBS = 15 V VIN = 5 V IC = 15 A, TJ = 25°C - - 2.0 V VF FWDi Forward Voltage VIN = 0 V IF = 15 A, TJ = 25°C - - 2.2 V HS tON Switching Times VPN = 300 V, VCC = 15 V, IC = 15 A TJ = 25°C VIN = 0 V  5 V, Inductive Load See Figure 5 (Note 6) - 1.0 - s tC(ON) - 0.4 - s tOFF - 0.4 - s tC(OFF) - 0.1 - s trr - 0.1 - s LS tON VPN = 300 V, VCC = 15 V, IC = 15 A TJ = 25°C VIN = 0 V  5 V, Inductive Load See Figure 5 (Note 6) - 0.8 - s tC(ON) - 0.3 - s tOFF - 0.8 - s tC(OFF) - 0.1 - s trr - 0.1 - s ICES Collector - Emitter Leakage Current VCE = VCES - - 5 mA VCE IC VIN tON tC(ON) VIN(ON) 10% IC 10% VCE90% IC 100% IC trr 100% IC VCEIC VIN tOFF tC(OFF) VIN(OFF) 10% VCE 10% IC (a) turn-on (b) turn-off

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©2015 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FSBB15CH60D Rev. 1.0 F S B B 15C H 60D M o tio n S P M ® 3 S eries Figure 5. Example Circuit for Switching Test Figure 6. Switching Loss Characteristics Figure 7. Temperature Profile of VTS (Typical) One-Leg Diagram of SPM 3 P NU,V,W VCC(H) IN(H) COM(H) VB OUT(H) VS VCC(L) IN(L) COM(L) OUT(L) CSC TSU VFO IC VPN U,V,W Inductor HS Switching LS Switching V 300V V V +15V +5V 4.7kΩ CBS HS Switching LS Switching V IN 0V 5V VCC

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©2015 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FSBB15CH60D Rev. 1.0 F S B B 15C H 60D M o tio n S P M ® 3 S eries Bootstrap Diode Part Control Part Note: 7. Short-circuit current protection is functioning only at the low-sides. 8. TLVIC is the temperature of LVIC itself. VTS is only for sensing temperature of LVIC and can not shutdown IGBTs automatically. Symbol Parameter Conditions Min. Typ. Max. Unit VF Forward Voltage IF = 0.1 A, TJ = 25°C - 2.5 - V trr Reverse Recovery Time IF = 0.1 A, dIF / dt = 50 A / s, TJ = 25°C - 80 - ns Symbol Parameter Conditions Min. Typ. Max. Unit IQCCH Quiescent VCC Supply Current VCC(H) = 15 V, IN(UH,VH,WH) = 0 V VCC(H) - COM - - 0.60 mA IQCCL VCC(L) = 15 V, IN(UL,VL, WL) = 0 V VCC(L) - COM - - 6.0 mA IPCCH Operating VCC Supply Current VCC(H) = 15 V, fPWM = 20 kHz, duty = 50%, applied to one PWM signal input for High- Side VCC(H) - COM - - 2.0 mA IPCCL VCC(L) = 15V, fPWM = 20 kHz, duty = 50%, applied to one PWM signal input for Low- Side VCC(L) - COM - - 10.0 mA IQBS Quiescent VBS Supply Current VBS = 15 V, IN(UH, VH, WH) = 0 V VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) - - 0.50 mA IPBS Operating VBS Supply Current VCC = VBS = 15 V, fPWM = 20 kHz, duty = 50%, applied to one PWM signal input for High-Side VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) - - 2.0 mA VFOH Fault Output Voltage VCC = 15 V, VSC = 0 V, VFO Circuit: 4.7 k to 5 V Pull-up 4.5 - - V VFOL VCC = 15 V, VSC = 1 V, VFO Circuit: 4.7 k to 5 V Pull-up - - 0.5 V VSC(ref) Short Circuit Trip Level VCC = 15 V (Note 7) CSC - COM(L) 0.45 0.50 0.55 V UVCCD Supply Circuit Under- Voltage Protection Detection Level 9.8 - 13.3 V UVCCR Reset Level 10.3 - 13.8 V UVBSD Detection Level 10.0 - 12.0 V UVBSR Reset Level 10.5 - 12.5 V tFOD Fault-Out Pulse Width 50 - - s VTS LVIC Temperature Sensing Voltage Output VCC(L) = 15 V, TLVIC = 25°C (Note 8) See Figure 7 540 640 740 mV VIN(ON) ON Threshold Voltage Applied between IN(UH, VH, WH) - COM, IN(UL, VL, WL) - COM - - 2.6 V VIN(OFF) OFF Threshold Voltage 0.8 - - V

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