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FSBB30CH60C

hot FSBB30CH60C

FSBB30CH60C

For Reference Only

Part Number FSBB30CH60C
Manufacturer Fairchild/ON Semiconductor
Description MODULE SPM 600V 30A SPMCC
Datasheet FSBB30CH60C Datasheet
Package 27-PowerDIP Module (1.205", 30.60mm)
In Stock 19414 piece(s)
Unit Price $ 19.3 *
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FSBB30CH60C

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FSBB30CH60C Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Power Driver Modules
Datasheet FSBB30CH60C Datasheet
Package27-PowerDIP Module (1.205", 30.60mm)
SeriesMotion SPM? 3
TypeIGBT
Configuration3 Phase
Current30A
Voltage600V
Voltage - Isolation2500Vrms
Package / Case27-PowerDIP Module (1.205", 30.60mm)

FSBB30CH60C Datasheet

Page 1

Page 2

To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

Page 3

F S B B 30C H 6 0C M o tio n S P M ® 3 S erie s February 2016 1 www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 FSBB30CH60C Motion SPM® 3 Series Features • UL Certified No. E209204 (UL1557) • 600 V - 30 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection • Low-Loss, Short-Circuit Rated IGBTs • Very Low Thermal Resistance Using AlN DBC Sub- strate • Built-in Bootstrap Diodes and Dedicated Vs Pins Sim- plify PCB Layout • Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing • Single-Grounded Power Supply • Isolation Rating: 2500 Vrms / min. Applications • Motion Control - Home Appliance / Industrial Motor Related Resources • AN-9044 - Motion SPM® 3 Series Users Guide General Description FSBB30CH60C is an advanced Motion SPM® 3 module providing a fully-featured, high-performance inverter out- put stage for AC Induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features includ- ing under-voltage lockouts, over-current shutdown, and fault reporting. The built-in, high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms. Figure 1. Package Overview Package Marking and Ordering Information Device Device Marking Package Packing Type Quantity FSBB30CH60C FSBB30CH60C SPMEC-027 Rail 10

Page 4

F S B B 30C H 6 0C M o tio n S P M ® 3 S erie s 2 www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 Integrated Power Functions • 600 V - 30 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3) Integrated Drive, Protection, and System Control Functions • For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting control circuit Under-Voltage Lock-Out Protection (UVLO) Note: Available bootstrap circuit example is given in Figures 12 and 13. • For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP) control supply circuit Under-Voltage Lock-Out Protection (UVLO) • Fault signaling: corresponding to UVLO (low-side supply) and SC faults • Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input Pin Configuration Figure 2. Top View

Page 5

F S B B 30C H 6 0C M o tio n S P M ® 3 S erie s 3 www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 Pin Descriptions Pin Number Pin Name Pin Description 1 VCC(L) Low-Side Common Bias Voltage for IC and IGBTs Driving 2 COM Common Supply Ground 3 IN(UL) Signal Input for Low-Side U-Phase 4 IN(VL) Signal Input for Low-Side V-Phase 5 IN(WL) Signal Input for Low-Side W-Phase 6 VFO Fault Output 7 CFOD Capacitor for Fault Output Duration Selection 8 CSC Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input 9 IN(UH) Signal Input for High-Side U-Phase 10 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving 11 VB(U) High-Side Bias Voltage for U-Phase IGBT Driving 12 VS(U) High-Side Bias Voltage Ground for U-Phase IGBT Driving 13 IN(VH) Signal Input for High-Side V-Phase 14 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving 15 VB(V) High-Side Bias Voltage for V-Phase IGBT Driving 16 VS(V) High-Side Bias Voltage Ground for V Phase IGBT Driving 17 IN(WH) Signal Input for High-Side W-Phase 18 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving 19 VB(W) High-Side Bias Voltage for W-Phase IGBT Driving 20 VS(W) High-Side Bias Voltage Ground for W-Phase IGBT Driving 21 NU Negative DC-Link Input for U-Phase 22 NV Negative DC-Link Input for V-Phase 23 NW Negative DC-Link Input for W-Phase 24 U Output for U-Phase 25 V Output for V-Phase 26 W Output for W-Phase 27 P Positive DC-Link Input

Page 6

F S B B 30C H 6 0C M o tio n S P M ® 3 S erie s 4 www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 Internal Equivalent Circuit and Input/Output Pins COM VCC IN(UL) IN(VL) IN(WL) VFO C(FOD) C(SC) OUT(UL) OUT(VL) OUT(WL) NU (21) NV (22) NW (23) U (24) V (25) W (26) P (27) (20) VS(W) (19) VB(W) (16) VS(V) (15) VB(V) (8) CSC (7) CFOD (6) VFO (5) IN(WL) (4) IN(VL) (3) IN(UL) (2) COM (1) VCC(L) VCC VB OUT COM VSIN VB VS OUT IN COM VCC VCC VB OUT COM VSIN (18) VCC(H) (17) IN(WH) (14) VCC(H) (13) IN(VH) (12) VS(U) (11) VB(U) (10) VCC(H) (9) IN(UH) VSL Figure 3. Internal Block Diagram 1st Notes: 1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT, and one control IC. It has gate drive and protection functions. 2. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals. 3. Inverter high-side is composed of three IGBTs, freewheeling diodes, and three drive ICs for each IGBT.

Page 7

F S B B 30C H 6 0C M o tio n S P M ® 3 S erie s 5 www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.) Inverter Part Symbol Parameter Conditions Rating Unit VPN Supply Voltage Applied between P - NU, NV, NW 450 V VPN(Surge) Supply Voltage (Surge) Applied between P - NU, NV, NW 500 V VCES Collector - Emitter Voltage 600 V ± IC Each IGBT Collector Current TC = 25°C, TJ ≤ 150°C 30 A ± ICP Each IGBT Collector Current (Peak) TC = 25°C, TJ ≤ 150°C, Under 1 ms Pulse Width 60 A PC Collector Dissipation TC = 25°C per Chip 106 W TJ Operating Junction Temperature (2nd Note 1) -40 ~ 150 °C 2nd Notes: 1. The maximum junction temperature rating of the power chips integrated within the Motion SPM® 3 product is 150°C (at TC ≤ 125°C). Control Part Symbol Parameter Conditions Rating Unit VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 20 V VBS High-Side Control Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) 20 V VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM -0.3 ~ VCC + 0.3 V VFO Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VCC + 0.3 V IFO Fault Output Current Sink Current at VFO pin 5 mA VSC Current-Sensing Input Voltage Applied between CSC - COM -0.3 ~ VCC + 0.3 V Bootstrap Diode Part Symbol Parameter Conditions Rating Unit VRRM Maximum Repetitive Reverse Voltage 600 V IF Forward Current TC = 25°C, TJ ≤ 150°C 0.5 A IFP Forward Current (Peak) TC = 25°C, TJ ≤ 150°C Under 1 ms Pulse Width 2.0 A TJ Operating Junction Temperature -40 ~ 150 °C Total System Symbol Parameter Conditions Rating Unit VPN(PROT) Self-Protection Supply Voltage Limit (Short-Circuit Protection Capability) VCC = VBS = 13.5 ~ 16.5 V TJ = 150°C, Non-Repetitive, < 2 μs 400 V TC Module Case Operation Temperature -40°C ≤ TJ ≤ 150°C, See Figure 2 -40 ~ 125 °C TSTG Storage Temperature -40 ~ 125 °C VISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect Pins to Heat Sink Plate 2500 Vrms Thermal Resistance Symbol Parameter Conditions Min. Typ. Max. Unit Rth(j-c)Q Junction to Case Thermal Resistance Inverter IGBT Part (per 1 / 6 module) - - 1.17 °C / W Rth(j-c)F Inverter FWDi Part (per 1 / 6 module) - - 1.87 °C / W 2nd Notes: 2. For the measurement point of case temperature (TC), please refer to Figure 2.

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F S B B 30C H 6 0C M o tio n S P M ® 3 S erie s 6 www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 Electrical Characteristics (TJ = 25°C, unless otherwise specified.) Inverter Part Symbol Parameter Conditions Min. Typ. Max. Unit VCE(SAT) Collector - Emitter Saturation Voltage VCC = VBS = 15 V VIN = 5 V IC = 20 A, TJ = 25°C - - 2.0 V VF FWDi Forward Voltage VIN = 0 V IF = 20 A, TJ = 25°C - - 2.1 V HS tON Switching Times VPN = 300 V, VCC = VBS = 15 V IC = 30 A VIN = 0 V ↔ 5 V, Inductive Load (2nd Note 3) - 0.75 - μs tC(ON) - 0.2 - μs tOFF - 0.4 - μs tC(OFF) - 0.1 - μs trr - 0.1 - μs LS tON VPN = 300 V, VCC = VBS = 15 V IC = 30 A VIN = 0 V ↔ 5 V, Inductive Load (2nd Note 3) - 0.55 - μs tC(ON) - 0.35 - μs tOFF - 0.4 - μs tC(OFF) - 0.1 - μs trr - 0.1 - μs ICES Collector - Emitter Leakage Current VCE = VCES - - 1 mA 2nd Notes: 3. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. Control Part Symbol Parameter Conditions Min. Typ. Max. Unit IQCCL Quiescent VCC Supply Current VCC = 15 V IN(UL, VL, WL) = 0 V VCC(L) - COM - - 23 mA IQCCH VCC = 15 V IN(UH, VH, WH) = 0 V VCC(H) - COM - - 600 μA IQBS Quiescent VBS Supply Current VBS = 15 V IN(UH, VH, WH) = 0 V VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) - - 500 μA VFOH Fault Output Voltage VSC = 0 V, VFO Circuit: 4.7 kΩ to 5 V Pull-up 4.5 - - V VFOL VSC = 1 V, VFO Circuit: 4.7 kΩ to 5 V Pull-up - - 0.8 V VSC(ref) Short-Circuit Current Trip Level VCC = 15 V (2nd Note 4) 0.45 0.50 0.55 V TSD Over-Temperature Protection Temperature at LVIC - 160 - °C ΔTSD Over-Temperature Protection Hysterisis Temperature at LVIC - 5 - °C UVCCD Supply Circuit Under-Voltage Protection Detection Level 10.7 11.9 13.0 V UVCCR Reset Level 11.2 12.4 13.4 V UVBSD Detection Level 10 11 12 V UVBSR Reset Level 10.5 11.5 12.5 V tFOD Fault-Out Pulse Width CFOD = 33 nF (2nd Note 5) 1.0 1.8 - ms VIN(ON) ON Threshold Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM 2.8 - - V VIN(OFF) OFF Threshold Voltage - - 0.8 V 2nd Notes: 4. Short-circuit protection is functioning only at the low-sides. 5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation: CFOD = 18.3 x 10 -6 x tFOD [F]

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VCE IC VIN t ON tC(ON) VIN(ON) 10% IC 10% VCE90% IC 100% IC t rr 100% IC 0 VCEIC V IN tOFF tC(OFF) VIN(OFF) 10% VCE 10% IC (a) turn-on (b) turn-off F S B B 30C H 6 0C M o tio n S P M ® 3 S erie s 7 www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 Figure 4. Switching Time Definition 0 3 6 9 12 15 18 21 24 27 30 33 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 SWITCHING LOSS(ON) VS. COLLECTOR CURRENT V CE =300V VCC=15V V IN =5V T J =25℃ T J =150℃ S W IT C H IN G L O S S , E S W (O N ) [ uJ ] COLLECTOR CURRENT, I c [AMPERES] 0 3 6 9 12 15 18 21 24 27 30 33 0 100 200 300 400 500 600 700 800 900 SWITCHING LOSS(OFF) VS. COLLECTOR CURRENT V CE =300V V CC =15V V IN =5V T J =25℃ T J =150℃ S W IT C H IN G L O S S , E S W (O F F ) [ uJ ] COLLECTOR CURRENT, I c [AMPERES] Figure 5. Switching Loss Characteristics (Typical)

Page 10

F S B B 30C H 6 0C M o tio n S P M ® 3 S erie s 8 www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 Bootstrap Diode Part Symbol Parameter Conditions Min. Typ. Max. Unit VF Forward Voltage IF = 0.1 A, TC = 25°C - 2.5 - V trr Reverse-Recovery Time IF = 0.1 A, TC = 25°C - 80 - ns 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Built-in Bootstrap Diode V F -I F Characteristic T C =25oC I F [ A ] V F [V] Figure 6. Built-in Bootstrap Diode Characteristics 2nd Notes: 6. Built-in bootstrap diode includes around 15 Ω resistance characteristic. Recommended Operating Conditions Symbol Parameter Conditions Min. Typ. Max. Unit VPN Supply Voltage Applied between P - NU, NV, NW - 300 400 V VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 13.5 15.0 16.5 V VBS High-Side Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) 13.0 15.0 18.5 V dVCC / dt, dVBS / dt Control Supply Variation -1 - 1 V / μs tdead Blanking Time for Preventing Arm-Short Each Input Signal 2 - - μs fPWM PWM Input Signal -40°C ≤ TC ≤ 125°C, -40°C ≤ TJ ≤ 150°C - - 20 kHz VSEN Voltage for Current Sensing Applied between NU, NV, NW - COM (Including Surge Voltage) -4 4 V

FSBB30CH60C Reviews

Average User Rating
5 / 5 (136)
★ ★ ★ ★ ★
5 ★
122
4 ★
14
3 ★
0
2 ★
0
1 ★
0

Moll*****mmen

February 14, 2020

Super easy search and order process. Lots of Shipping and Payment Options, you can always find the best way for the purchase.

Giuli*****antiago

February 5, 2020

These very economical items will repair my expensive contactors with just a quick connection.

Kimb*****anne

January 21, 2020

Good seller, incredible reliable.Item as described. Very professional

Elli*****eadows

December 13, 2019

Excellent service and product arrives in reasonable shipping rates. Well done!

Myl*****Xiong

December 2, 2019

I've had no issues. Good product, would buy again.

Johnn*****hdeva

November 22, 2019

I bought this for myself, and liked it so much. I also bought one for a friend.

Pau*****ombs

October 16, 2019

They are great as I need, I give 5 stars.

Kash*****Baker

October 10, 2019

Purchased this in May and didn't use it until last week. worked and all was good.

Aliy*****nley

September 25, 2019

It gives you a good quality product, with a great variety.. I will for sure order this set again when i start to run low

Kayle*****errera

August 17, 2019

Serves its purpose. All that's needed.

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