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H11A5M

hot H11A5M

H11A5M

For Reference Only

Part Number H11A5M
Manufacturer Fairchild/ON Semiconductor
Description OPTOISO 7.5KV TRANS W/BASE 6DIP
Datasheet H11A5M Datasheet
Package 6-DIP (0.300", 7.62mm)
In Stock 4000 piece(s)
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Lead Time Can Ship Immediately
Estimated Delivery Time Dec 8 - Dec 13 (Choose Expedited Shipping)
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H11A5M

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H11A5M Specifications

ManufacturerFairchild/ON Semiconductor
CategoryIsolators - Optoisolators - Transistor, Photovoltaic Output
Datasheet H11A5M Datasheet
Package6-DIP (0.300", 7.62mm)
Series-
Number of Channels1
Voltage - Isolation7500Vpk
Current Transfer Ratio (Min)30% @ 10mA
Turn On / Turn Off Time (Typ)2µs, 2µs
Input TypeDC
Output TypeTransistor with Base
Voltage - Output (Max)30V
Voltage - Forward (Vf) (Typ)1.18V
Current - DC Forward (If) (Max)60mA
Vce Saturation (Max)400mV
Operating Temperature-40°C ~ 100°C
Mounting TypeThrough Hole
Package / Case6-DIP (0.300", 7.62mm)
Supplier Device Package6-DIP

H11A5M Datasheet

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4 N X X M , H 1 1 A X M — G e n e ra l P u rp o s e 6 -P in P h o to tra n s is to r O p to c o u p le rs ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11AXM Rev. 1.0.2 January 2009 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M, H11A1M, H11A2M, H11A3M, H11A4M, H11A5M General Purpose 6-Pin Phototransistor Optocouplers Features ■ UL recognized (File # E90700, Volume 2) ■ VDE recognized (File # 102497) – Add option V (e.g., 4N25VM) Applications ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs Description The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon pho- totransistor in a 6-pin dual in-line package. Schematic Package Outlines PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 2 1 3 NC 5 6 4

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©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11AXM Rev. 1.0.2 2 4 N X X M , H 1 1 A X M — G e n e ra l P u rp o s e 6 -P in P h o to tra n s is to r O p to c o u p le rs Absolute Maximum Ratings (T A = 25°C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Electrical Characteristics (T A = 25°C unless otherwise specified) Individual Component Characteristics Isolation Characteristics *Typical values at T A = 25°C Symbol Parameter Value Units TOTAL DEVICE T STG Storage Temperature -40 to +150 °C T OPR Operating Temperature -40 to +100 °C T SOL Wave solder temperature (see page 8 for reflow solder profile) 260 for 10 sec °C P D Total Device Power Dissipation @ T A = 25°C Derate above 25°C 250 mW 2.94 EMITTER I F DC/Average Forward Input Current 60 mA V R Reverse Input Voltage 6 V I F (pk) Forward Current – Peak (300µs, 2% Duty Cycle) 3 A P D LED Power Dissipation @ T A = 25°C Derate above 25°C 120 mW 1.41 mW/°C DETECTOR V CEO Collector-Emitter Voltage 30 V V CBO Collector-Base Voltage 70 V V ECO Emitter-Collector Voltage 7 V P D Detector Power Dissipation @ T A = 25°C Derate above 25°C 150 mW 1.76 mW/°C Symbol Parameter Test Conditions Min. Typ.* Max. Unit EMITTER V F Input Forward Voltage I F = 10mA 1.18 1.50 V I R Reverse Leakage Current V R = 6.0V 0.001 10 µA DETECTOR BV CEO Collector-Emitter Breakdown Voltage I C = 1.0mA, I F = 0 30 100 V BV CBO Collector-Base Breakdown Voltage I C = 100µA, I F = 0 70 120 V BV ECO Emitter-Collector Breakdown Voltage I E = 100µA, I F = 0 7 10 V I CEO Collector-Emitter Dark Current V CE = 10V, I F = 0 1 50 nA I CBO Collector-Base Dark Current V CB = 10V 20 nA C CE Capacitance V CE = 0V, f = 1 MHz 8 pF Symbol Characteristic Test Conditions Min. Typ.* Max. Units V ISO Input-Output Isolation Voltage f = 60Hz, t = 1 sec 7500 Vac(pk) R ISO Isolation Resistance V I-O = 500 VDC 10 11 Ω C ISO Isolation Capacitance V I-O = &, f = 1MHz 0.2 2 pF

Page 4

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11AXM Rev. 1.0.2 3 4 N X X M , H 1 1 A X M — G e n e ra l P u rp o s e 6 -P in P h o to tra n s is to r O p to c o u p le rs Electrical Characteristics (Continued) (T A = 25°C unless otherwise specified) Transfer Characteristics * Typical values at T A = 25°C Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit DC CHARACTERISTICS CTR Current Transfer Ratio, Collector to Emitter I F = 10mA, V CE = 10V 4N35M, 4N36M, 4N37M 100 % H11A1M 50 H11A5M 30 4N25M, 4N26M H11A2M, H11A3M 20 4N27M, 4N28M H11A4M 10 I F = 10mA, V CE = 10V, T A = -55°C 4N35M, 4N36M, 4N37M 40 I F = 10mA, V CE = 10V, T A = +100°C 4N35M, 4N36M, 4N37M 40 V CE (SAT) Collector-Emitter Saturation Voltage I C = 2mA, I F = 50mA 4N25M, 4N26M, 4N27M, 4N28M, 0.5 V I C = 0.5mA, I F = 10mA 4N35M, 4N36M, 4N37M 0.3 H11A1M, H11A2M, H11A3M, H11A4M, H11A5M 0.4 AC CHARACTERISTICS T ON Non-Saturated Turn-on Time I F = 10mA, V CC = 10V, R L = 100 Ω (Fig. 11) 4N25M, 4N26M, 4N27M, 4N28M, H11A1M, H11A2M, H11A3M, H11A4, H11A5M 2 µs I C = 2mA, V CC = 10V, R L = 100 Ω (Fig. 11) 4N35M, 4N36M, 4N37M 2 10 µs T OFF Turn-off Time I F = 10mA, V CC = 10V, R L = 100 Ω (Fig. 11) 4N25M, 4N26M, 4N27M, 4N28M, H11A1M, H11A2M, H11A3M, H11A4M, H11A5M 2 µs I C = 2mA, V CC = 10V, R L = 100 Ω (Fig. 11) 4N35M, 4N36M, 4N37M 2 10

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©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11AXM Rev. 1.0.2 4 4 N X X M , H 1 1 A X M — G e n e ra l P u rp o s e 6 -P in P h o to tra n s is to r O p to c o u p le rs Typical Performance Curves Fig. 2 Normalized CTR vs. Forward Current IF - FORWARD CURRENT (mA) 0 2 4 6 8 10 12 14 16 18 20 N O R M A L IZ E D C T R 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VCE = 5.0V TA = 25°C Normalized to IF = 10 mA Fig. 3 Normalized CTR vs. Ambient Temperature TA - AMBIENT TEMPERATURE (°C) -60 -40 -20 0 20 40 60 80 100 N O R M A L IZ E D C T R 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IF = 5 mA IF = 10 mA IF = 20 mA Normalized to IF = 10 mA TA = 25°C IF - LED FORWARD CURRENT (mA) V F - F O R W A R D V O LT A G E ( V ) Fig. 1 LED Forward Voltage vs. Forward Current 1 10 100 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 TA = 25°C TA = -55°C TA = 100°C Fig. 5 CTR vs. RBE (Saturated) RBE- BASE RESISTANCE (k Ω) N O R M A L IZ E D C T R ( C T R R B E / C T R R B E (O P E N )) 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IF = 20 mA IF = 10 mA IF = 5 mA VCE= 0.3 V Fig. 4 CTR vs. RBE (Unsaturated) RBE- BASE RESISTANCE (kΩ) N O R M A L IZ E D C T R ( C T R R B E / C T R R B E (O P E N )) 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VCE = 5.0 V IF = 20 mA IF = 10 mA IF = 5 mA 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 IF = 5 mA IF = 20 mA IF = 10 mA Fig. 6 Collector-Emitter Saturation Voltage vs. Collector Current IC - COLLECTOR CURRENT (mA) V C E ( S A T ) - C O L L E C T O R -E M IT T E R S A T U R A T IO N V O LT A G E ( V ) IF = 2.5 mA TA = 25˚C

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©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11AXM Rev. 1.0.2 5 4 N X X M , H 1 1 A X M — G e n e ra l P u rp o s e 6 -P in P h o to tra n s is to r O p to c o u p le rs N O R M A L IZ E D t o n - ( t o n (R B E ) / t o n (o p e n )) Fig. 8 Normalized ton vs. RBE RBE- BASE RESISTANCE (k Ω) 10 100 1000 10000 100000 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCC = 10 V IC = 2 mA RL = 100 Ω S W IT C H IN G S P E E D - (µ s ) Fig. 7 Switching Speed vs. Load Resistor R-LOAD RESISTOR (kΩ) 0.1 1 10 100 0.1 1 10 100 1000 Toff IF = 10 mA VCC = 10 V TA = 25°C Tr Ton Tf 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 VCC = 10 V IC = 2 mA RL = 100 Ω N O R M A L IZ E D t o ff - ( t o ff (R B E ) / t o ff (o p e n )) 10 100 1000 10000 100000 RBE- BASE RESISTANCE (k Ω) Fig. 9 Normalized toff vs. RBE Fig. 10 Dark Current vs. Ambient Temperature TA - AMBIENT TEMPERATURE (°C) 0 20 40 60 80 100 I C E O - C O L L E C T O R - E M IT T E R D A R K C U R R E N T ( n A ) 0.001 0.01 0.1 1 10 100 1000 10000 VCE = 10 V TA = 25°C OUTPUT PULSE INPUT PULSE TEST CIRCUIT WAVE FORMS tr tf INPUT IF RL RBE VCC = 10V OUTPUT ton 10% 90% toff Figure 11. Switching Time Test Circuit and Waveforms IC Adjust IF to produce IC = 2 mA Typical Performance Curves (Continued)

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©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11AXM Rev. 1.0.2 6 4 N X X M , H 1 1 A X M — G e n e ra l P u rp o s e 6 -P in P h o to tra n s is to r O p to c o u p le rs Package Dimensions 8.13–8.89 6.10–6.60 Pin 1 6 4 1 3 0.25–0.36 5.08 (Max.) 3.28–3.53 0.38 (Min.) 2.54–3.81 2.54 (Bsc)(0.86) 0.41–0.51 1.02–1.78 0.76–1.14 8.13–8.89 6.10–6.60 Pin 1 6 4 1 3 0.25–0.36 5.08 (Max.) 3.28–3.53 0.38 (Min.) 2.54–3.81 2.54 (Bsc)(0.86) 0.41–0.51 1.02–1.78 0.76–1.14 7.62 (Typ.) 15° (Typ.) 0.20–0.30 0.20–0.30 10.16–10.80 Through Hole 0.4" Lead Spacing Surface Mount Rcommended Pad Layout (1.78) (2.54) (1.52) (7.49) (10.54) (0.76) 8.13–8.89 Note: All dimensions in mm. 6.10–6.60 8.43–9.90 Pin 1 6 4 1 3 0.25–0.36 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.76–1.14 0.38 (Min.) 3.28–3.53 5.08 (Max.) 0.20–0.30 0.16–0.88 (8.13)

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©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11AXM Rev. 1.0.2 7 4 N X X M , H 1 1 A X M — G e n e ra l P u rp o s e 6 -P in P h o to tra n s is to r O p to c o u p le rs Ordering Information Marking Information Option Order Entry Identifier (Example) Description No option 4N25M Standard Through Hole Device S 4N25SM Surface Mount Lead Bend SR2 4N25SR2M Surface Mount; Tape and Reel T 4N25TM 0.4" Lead Spacing V 4N25VM VDE 0884 TV 4N25TVM VDE 0884, 0.4" Lead Spacing SV 4N25SVM VDE 0884, Surface Mount SR2V 4N25SR2VM VDE 0884, Surface Mount, Tape and Reel *Note – Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code, e.g., ‘7’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code 4N25 V X YY Q 1 2 6 43 5

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©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11AXM Rev. 1.0.2 8 4 N X X M , H 1 1 A X M — G e n e ra l P u rp o s e 6 -P in P h o to tra n s is to r O p to c o u p le rs Carrier Tape Specification Reflow Profile 4.0 ± 0.1 Ø1.5 MIN User Direction of Feed 2.0 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 24.0 ± 0.3 12.0 ± 0.1 0.30 ± 0.05 21.0 ± 0.1 4.5 ± 0.20 0.1 MAX 10.1 ± 0.20 9.1 ± 0.20 Ø1.5 ± 0.1/-0 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 °C Time (s) 0 60 180120 270 260°C >245°C = 42 Sec Time above 183°C = 90 Sec 360 1.822°C/Sec Ramp up rate 33 Sec

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