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HGTG5N120BND

hot HGTG5N120BND

HGTG5N120BND

For Reference Only

Part Number HGTG5N120BND
Manufacturer Fairchild/ON Semiconductor
Description IGBT 1200V 21A 167W TO247
Datasheet HGTG5N120BND Datasheet
Package TO-247-3
In Stock 72780 piece(s)
Unit Price $ 3.07 *
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HGTG5N120BND Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - IGBTs - Single
Datasheet HGTG5N120BND Datasheet
PackageTO-247-3
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)21A
Current - Collector Pulsed (Icm)40A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 5A
Power - Max167W
Switching Energy450��J (on), 390��J (off)
Input TypeStandard
Gate Charge53nC
Td (on/off) @ 25��C22ns/160ns
Test Condition960V, 5A, 25 Ohm, 15V
Reverse Recovery Time (trr)65ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

HGTG5N120BND Datasheet

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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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©2003 Fairchild Semiconductor Corporation HGTG5N120BND, HGTP5N120BND, Rev. B1 HGTG5N120BND, HGTP5N120BND 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are Non- Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49306. Symbol Features • 21A, 1200V, TC = 25 oC • 1200V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150 oC • Short Circuit Rating • Low Conduction Loss • Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.fairchildsemi.com • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC STYLE TO-247 JEDEC TO-220AB (ALTERNATE VERSION) Ordering Information PART NUMBER PACKAGE BRAND HGTG5N120BND TO-247 5N120BND HGTP5N120BND TO-220AB 5N120BND NOTE: When ordering, use the entire part number. i.e., HGTG5N120BND. E G C G C E COLLECTOR (FLANGE) G COLLECTOR E (FLANGE) C FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 Data Sheet May 2003

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©2003 Fairchild Semiconductor Corporation HGTG5N120BND, HGTP5N120BND, Rev. B1 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified HGTG5N120BND HGTP5N120BND UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V Collector Current Continuous At TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 21 A At TC = 110 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 10 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 40 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ± 20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ± 30 V Switching Safe Operating Area at TJ = 150 oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 30A at 1200V Power Dissipation Total at TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 167 W Power Dissipation Derating TC > 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260 oC Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 8 µ s Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 15 µ s CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840V, TJ = 125 oC, RG = 25Ω. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µ A, VGE = 0V 1200 - - V Collector to Emitter Leakage Current ICES VCE = 1200V TC = 25 oC - - 250 µ A TC = 125 oC - 100 - µ A TC = 150 oC - - 1.5 mA Collector to Emitter Saturation Voltage VCE(SAT) IC = 5A, VGE = 15V TC = 25 oC - 2.45 2.7 V TC = 150 oC - 3.7 4.2 V Gate to Emitter Threshold Voltage VGE(TH) IC = 45µ A, VCE = VGE 6.0 6.8 - V Gate to Emitter Leakage Current IGES VGE = ± 20V - - ± 250 nA Switching SOA SSOA TJ = 150 oC, RG = 25Ω, VGE = 15V, L = 5mH, VCE(PK) = 1200V 30 - - A Gate to Emitter Plateau Voltage VGEP IC = 5A, VCE = 600V - 10.5 - V On-State Gate Charge QG(ON) IC = 5A, VCE = 600V VGE = 15V - 53 65 nC VGE = 20V - 60 72 nC Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25 oC, ICE = 5A, VCE = 960V, VGE = 15V, RG = 25Ω , L = 5mH, Test Circuit (Figure 20) - 22 25 ns Current Rise Time trI - 15 20 ns Current Turn-Off Delay Time td(OFF)I - 160 180 ns Current Fall Time tfI - 130 160 ns Turn-On Energy EON - 450 600 µ J Turn-Off Energy (Note 3) EOFF - 390 450 µ J HGTG5N120BND, HGTP5N120BND

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©2003 Fairchild Semiconductor Corporation HGTG5N120BND, HGTP5N120BND, Rev. B1 Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150 oC, ICE = 5A, VCE = 960V, VGE = 15V, RG = 25Ω , L = 5mH, Test Circuit (Figure 20) - 20 25 ns Current Rise Time trI - 15 20 ns Current Turn-Off Delay Time td(OFF)I - 182 280 ns Current Fall Time tfI - 175 200 ns Turn-On Energy EON - 1000 1300 µ J Turn-Off Energy (Note 3) EOFF - 560 800 µ J Diode Forward Voltage VEC IEC = 10A - 2.70 3.50 V Diode Reverse Recovery Time trr IEC = 7A, dlEC/dt = 200A/µ s - 50 65 ns IEC = 1A, dlEC/dt = 200A/µ s - 30 40 ns Thermal Resistance Junction To Case Rθ JC IGBT - - 0.75 oC/W Diode - - 1.75 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Electrical Specifications TC = 25 oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Typical Performance Curves Unless Otherwise Specified FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA TC, CASE TEMPERATURE ( oC) I C E , D C C O L L E C T O R C U R R E N T ( A ) 50 0 25 75 100 125 150 5 10 15 25 20 VGE = 15V VCE, COLLECTOR TO EMITTER VOLTAGE (V) 14000 I C E , C O L L E C T O R T O E M IT T E R C U R R E N T ( A ) 600 800400200 1000 1200 0 TJ = 150 oC, RG = 25Ω , VGE = 15V, L = 5mH 5 10 15 20 25 30 35 HGTG5N120BND, HGTP5N120BND

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©2003 Fairchild Semiconductor Corporation HGTG5N120BND, HGTP5N120BND, Rev. B1 FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT Typical Performance Curves Unless Otherwise Specified (Continued) 4 ICE, COLLECTOR TO EMITTER CURRENT (A) 10 108 50 6 100 2 200 TC VGE 75oC 12V 75oC 15V TJ = 150 oC, RG = 25Ω , L = 5mH, VCE = 960V TC VGE 12V 15V110oC 110oC fMAX1 = 0.05 / (td(OFF)I + td(ON)I) RØJC = 0.75 oC/W, SEE NOTES PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) fMAX2 = (PD - PC) / (EON + EOFF) TC = 75 oC, VGE = 15V IDEAL DIODE f M A X , O P E R A T IN G F R E Q U E N C Y ( k H z ) VGE, GATE TO EMITTER VOLTAGE (V) I S C , P E A K S H O R T C IR C U IT C U R R E N T ( A ) t S C , S H O R T C IR C U IT W IT H S T A N D T IM E ( µs ) 11 12 13 14 15 10 20 30 40 20 30 40 50 70 tSC ISC 60 10 15 25 35 80 VCE = 840V, RG = 25Ω , TJ = 125 oC TC = -55 oC 0 2 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) I C E , C O L L E C T O R T O E M IT T E R C U R R E N T ( A ) 0 5 10 15 6 8 10 30 25 20 PULSE DURATION = 250µ s DUTY CYCLE <0.5%, VGE = 12V TC = 25 oC TC = 150 oC I C E , C O L L E C T O R T O E M IT T E R C U R R E N T ( A ) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 10 15 20 0 2 4 6 8 10 5 25 0 30 TC = -55 oC TC = 25 oC TC = 150 oC DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250µ s E O N , T U R N -O N E N E R G Y L O S S ( µJ ) 2500 1500 ICE, COLLECTOR TO EMITTER CURRENT (A) 1000 500 53 7642 3000 8 9 10 2000 0 RG = 25Ω , L = 5mH, VCE = 960V TJ = 150 oC, VGE = 12V, VGE = 15V TJ = 25 oC, VGE = 12V, VGE = 15V ICE, COLLECTOR TO EMITTER CURRENT (A) E O F F , T U R N -O F F E N E R G Y L O S S ( µJ ) 643 5 72 300 200 400 500 98 600 700 800 900 10 TJ = 25 oC, VGE = 12V OR 15V TJ = 150 oC, VGE = 12V OR 15V RG = 25Ω , L = 5mH, VCE = 960V HGTG5N120BND, HGTP5N120BND

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©2003 Fairchild Semiconductor Corporation HGTG5N120BND, HGTP5N120BND, Rev. B1 FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS Typical Performance Curves Unless Otherwise Specified (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) t d I, T U R N -O N D E L A Y T IM E (n s ) 32 4 6 20 30 5 7 98 10 40 35 25 15 RG = 25Ω , L = 5mH, VCE = 960V TJ = 25 oC, TJ = 150 oC, VGE = 12V TJ = 25 oC, TJ = 150 oC, VGE = 15V ICE, COLLECTOR TO EMITTER CURRENT (A) t r I, R IS E T IM E (n s ) 0 10 15 40 20 42 30 3 765 25 1098 35 RG = 25Ω , L = 5mH, VCE = 960V TJ = 25 oC, TJ = 150 oC, VGE = 15V TJ = 25 oC, TJ = 150 oC, VGE = 12V 10 100 ICE, COLLECTOR TO EMITTER CURRENT (A) t d (O F F )I , T U R N -O F F D E L A Y T IM E (n s ) 250 225 200 175 150 2 3 4 5 6 7 8 9 RG = 25Ω , L = 5mH, VCE = 960V VGE = 12V, VGE = 15V, TJ = 150 oC VGE = 12V, VGE = 15V, TJ = 25 oC 125 ICE, COLLECTOR TO EMITTER CURRENT (A) t f I, F A L L T IM E (n s ) 150 50 250 100 200 2 3 4 5 6 7 8 9 10 RG = 25Ω , L = 5mH, VCE = 960V TJ = 25 oC, VGE = 12V OR 15V TJ = 150 oC, VGE = 12V OR 15V I C E , C O L L E C T O R T O E M IT T E R C U R R E N T ( A ) 0 10 20 30 137 8 9 10 12 VGE, GATE TO EMITTER VOLTAGE (V) 11 40 50 60 14 15 70 TC = 25 oC TC = -55 oCTC = 150 oC 80 PULSE DURATION = 250µ s DUTY CYCLE <0.5%, VCE = 20V V G E , G A T E T O E M IT T E R V O L T A G E ( V ) QG, GATE CHARGE (nC) 14 4 16 2 6 0 605040 8 10 12 3020100 VCE = 800V VCE = 400V VCE = 1200V IG(REF) = 1mA, RL = 120Ω , TC = 25 oC HGTG5N120BND, HGTP5N120BND

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©2003 Fairchild Semiconductor Corporation HGTG5N120BND, HGTP5N120BND, Rev. B1 FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE FIGURE 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT Typical Performance Curves Unless Otherwise Specified (Continued) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 0 5 10 15 20 25 0 0.5 CIES COES 1.0 CRES FREQUENCY = 1MHz C , C A P A C IT A N C E ( n F ) 1.5 2.0 I C E , C O L L E C T O R T O E M IT T E R C U R R E N T ( A ) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 0 0.5 1.0 DUTY CYCLE < 0.5%, TC = 110 oC PULSE DURATION = 250µ s VGE = 15V VGE = 10V 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 2 4 6 8 10 t1, RECTANGULAR PULSE DURATION (s) Z θJ C , N O R M A L IZ E D T H E R M A L R E S P O N S E 10-2 10-1 100 10-5 10-3 10-2 10-1 10010-4 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD x Zθ JC x Rθ JC) + TC SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 t1 t2 PD 1 10 100 0 1 2 3 4 5 6 7 8 I F , F O R W A R D C U R R E N T ( A ) VF, FORWARD VOLTAGE (V) 150oC -55oC 25oC 60 50 40 30 20 10 0 1 2 3 4 5 6 7 IF, FORWARD CURRENT (A) t, R E C O V E R Y T IM E ( n s ) TC = 25 oC, dlEC / dt = 200A/µ s trr ta tb HGTG5N120BND, HGTP5N120BND

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©2003 Fairchild Semiconductor Corporation HGTG5N120BND, HGTP5N120BND, Rev. B1 Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate- insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open- circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/Rθ JC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). Test Circuit and Waveforms FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS RG = 25Ω L = 2mH VDD = 960V + - HGTG5N120BND tfI td(OFF)I trI td(ON)I 10% 90% 10% 90% VCE ICE VGE EOFF EON HGTG5N120BND, HGTP5N120BND

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Dunca*****nnell

November 14, 2019

I bought this for myself, and liked it so much. I also bought one for a friend.

Tomas*****ington

November 6, 2019

They work great exactly what I needed.

Malco*****mpson

September 18, 2019

Perfect, functional, arrived a weeks earlier, excellent Seller. Recommended

Theo*****phens

June 10, 2019

You guys and girls I can trust and rely on. Thank You All!

Rei*****Doshi

May 28, 2019

Completely satisfied of HGTG5N120BND , I always find what I need. The site is easy to get the components .

Westl*****itaker

April 21, 2019

Great condition, super kind person, quick shipping! and great price too!

Carson*****maniam

April 6, 2019

I like this way to add a project, choose existing project to add components. I use this method frequently to keep track of my projects. Thanks Heisener!

Dari*****liver

January 27, 2019

What I like was it was shipped fast and no damage.

Xime*****loyd

December 17, 2018

So far so good. I need to see how they hold up.

Rog*****Vohra

November 4, 2018

These little guys worked perfect for my wiring project. Reliable, good quality.

HGTG5N120BND Guarantees

Service Guarantee

Service Guarantees

We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

HGTG5N120BND Packaging

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