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HMC326MS8GETR

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HMC326MS8GETR

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Part Number HMC326MS8GETR
Manufacturer Analog Devices Inc.
Description IC HBT DVR AMP 3.5GHZ 8-MSOP
Datasheet HMC326MS8GETR Datasheet
Package 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
In Stock 782 piece(s)
Unit Price $ 7.3625 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 25 - Jan 30 (Choose Expedited Shipping)
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Part Number # HMC326MS8GETR (RF Amplifiers) is manufactured by Analog Devices Inc. and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For HMC326MS8GETR specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add HMC326MS8GETR with quantity into BOM. Heisener.com does NOT require any registration to request a quote of HMC326MS8GETR.

HMC326MS8GETR Specifications

ManufacturerAnalog Devices Inc.
CategoryRF/IF and RFID - RF Amplifiers
Datasheet HMC326MS8GETRDatasheet
Package8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Series-
Frequency3GHz ~ 4.5GHz
P1dB23.5dBm
Gain21dB
Noise Figure5dB
RF TypeGeneral Purpose
Voltage - Supply5V
Current - Supply130mA
Test Frequency-
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package8-MSOPG

HMC326MS8GETR Datasheet

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A M P LI F IE R S - D R IV E R & G A IN B LO C K - S M T 1 HMC326MS8G / 326MS8GE v10.1017 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. General Description Features Functional Diagram The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers which operate between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21 dB of gain and +26 dBm of saturated power from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40% PAE. Psat Output Power: +26 dBm > 40% PAE Output IP3: +36 dBm High Gain: 21 dB Vs: +5V Ultra Small Package: MSOP8G Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V Typical Applications The HMC326MS8G / HMC326MS8GE is ideal for: • Microwave Radios • Broadband Radio Systems • Wireless Local Loop Driver Amplifier Parameter Min. Typ. Max. Units Frequency Range 3.0 - 4.5 GHz Gain 18 21 dB Gain Variation Over Temperature 0.025 0.035 dB / °C Input Return Loss 12 dB Output Return Loss 7 dB Output Power for 1dB Compression (P1dB) 21 23.5 dBm Saturated Output Power (Psat) 26 dBm Output Third Order Intercept (IP3) 32 36 dBm Noise Figure 5 dB Supply Current (Icc) Vpd = 0V 1 uA Supply Current (Icc) Vpd = 5V 110 130 160 mA Control Current (Ipd) 7 mA Switching Speed tOn/tOff 10 ns

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For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D A M P LI F IE R S - D R IV E R & G A IN B LO C K - S M T 2 HMC326MS8G / 326MS8GE v10.1017 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz P1dB vs. Temperature Psat vs. Temperature Broadband Gain & Return Loss Gain vs. Temperature Output IP3 vs. Temperature -20 -15 -10 -5 0 5 10 15 20 25 2 2.5 3 3.5 4 4.5 5 5.5 6 S21 S11 S22 R E S P O N S E ( d B ) FREQUENCY (GHz) 15 17 19 21 23 25 3 3.25 3.5 3.75 4 4.25 4.5 +25C +85C -40C G A IN ( d B ) FREQUENCY (GHz) 20 22 24 26 28 30 3 3.25 3.5 3.75 4 4.25 4.5 +25C +85C -40C O U T P U T P 1 d B ( d B m ) FREQUENCY (GHz) 20 22 24 26 28 30 3 3.25 3.5 3.75 4 4.25 4.5 +25C +85C -40C P s a t (d B m ) FREQUENCY (GHz) 30 32 34 36 38 40 3 3.25 3.5 3.75 4 4.25 4.5 +25C +85C -40C IP 3 ( d B m ) FREQUENCY (GHz) 0 5 10 15 20 25 30 35 40 45 -8 -6 -4 -2 0 2 4 6 8 10 12 Output Power (dBm) Gain (dB) PAE (%) P o u t (d B m ), G a in ( d B ), P A E ( % ) INPUT POWER (dBm) Power Compression @ 3.5 GHz

Page 4

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D A M P LI F IE R S - D R IV E R & G A IN B LO C K - S M T 3 HMC326MS8G / 326MS8GE v10.1017 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Reverse Isolation vs. Temperature Noise Figure vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Gain, Power & Quiescent Supply Current vs. Vpd @3.5 GHz -20 -15 -10 -5 0 3 3.25 3.5 3.75 4 4.25 4.5 +25C +85C -40C R E T U R N L O S S ( d B ) FREQUENCY (GHz) -15 -12 -9 -6 -3 0 3 3.25 3.5 3.75 4 4.25 4.5 +25C +85C -40C R E T U R N L O S S ( d B ) FREQUENCY (GHz) -60 -50 -40 -30 -20 -10 0 3 3.25 3.5 3.75 4 4.25 4.5 +25C +85C -40C R E V E R S E I S O L A T IO N ( d B ) FREQUENCY (GHz) 0 1 2 3 4 5 6 7 8 9 10 3 3.25 3.5 3.75 4 4.25 4.5 +25C +85C -40C N O IS E F IG U R E ( d B ) FREQUENCY (GHz) 12 15 18 21 24 27 0 30 60 90 120 150 1.5 2 2.5 3 3.5 4 4.5 5 G A IN ( d B ), P 1 d B ( d B m ), P s a t (d B m ) Ic c (m A ) Vpd (Vdc) Icc P1dB GAIN PSAT -190 -180 -170 -160 -150 -140 -130 -120 -110 -100 -90 100 1K 10K 100K 1M 10M P H A S E N O IS E ( d B c /H z ) OFFSET FREQUENCY (Hz) Additive Phase Noise Vs Offset Frequency, RF Frequency = 4 GHz, RF Input Power = 10 dBm (Psat)

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For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D A M P LI F IE R S - D R IV E R & G A IN B LO C K - S M T 4 HMC326MS8G / 326MS8GE v10.1017 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Outline Drawing Absolute Maximum Ratings Collector Bias Voltage (Vcc) +5.5 Vdc Control Voltage Range (Vpd) +5.5 Vdc RF Input Power (RFIN)(Vs = Vpd = +5Vdc) +15 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 14 mW/°C above 85 °C) 0.916 W Thermal Resistance (junction to ground paddle) 71 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] HMC326MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H326 XXXX HMC326MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H326 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX Package Information ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 0.95 0.85 0.75 0.38 0.30 0.22 8-Lead Mini Small Outline Package with Exposed Pad [MINI_SO_EP] (RH-8-4) Dimensions shown in millimeters COMPLIANT TO JEDEC STANDARDS MO-187-AA-T 3.10 3.00 2.90 3.10 3.00 2.90 5.08 4.90 4.68 0.80 0.60 0.40 0.13 MAX 0.95 REF TOP VIEW BOTTOM VIEW SIDE VIEW END VIEW 01 -1 3- 20 17 -A PK G -0 04 85 4 1 4 58 0.65 BSC 1.10 MAX 1.78 MAX 2.41 MAX 1.95 BSC 0.22 0.08 COPLANARITY 0.10 0.25 GAGE PLANE 6° 0° EXPOSED PAD FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET. 8-Lead Mini Small Outline Package with Exposed Pad [MINI_SO_EP] (RH-8-4) Dimensions shown in millimeters.

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For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D A M P LI F IE R S - D R IV E R & G A IN B LO C K - S M T 5 HMC326MS8G / 326MS8GE v10.1017 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Analog Devices upon request. List of Materials for Evaluation PCB 104356 [1] Item Description J1 - J2 PCB Mount SMA RF Connector J3 2mm DC Header C1 - C2 330 pF Capacitor, 0603 Pkg. C3 0.7 pF Capacitor, 0603 Pkg. C4 3.0 pF Capacitor, 0402 Pkg. C5 2.2 µF Capacitor, Tantalum L1 3.3 nH Inductor, 0805 Pkg. U1 HMC326MS8G / HMC326MS8GE Amplifier PCB [2] 104106 Eval Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, 10 mil thick, tr = 3.48

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HMC326MS8GETR Guarantees

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