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HMHA2801R2

hot HMHA2801R2

HMHA2801R2

For Reference Only

Part Number HMHA2801R2
Manufacturer Fairchild/ON Semiconductor
Description OPTOISO 3.75KV TRANSISTOR 4SMD
Datasheet HMHA2801R2 Datasheet
Package 4-SOIC (0.173", 4.40mm)
In Stock 20728 piece(s)
Unit Price $ 0.1982 *
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HMHA2801R2

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HMHA2801R2 Specifications

ManufacturerFairchild/ON Semiconductor
CategoryIsolators - Optoisolators - Transistor, Photovoltaic Output
Datasheet HMHA2801R2 Datasheet
Package4-SOIC (0.173", 4.40mm)
Series-
Number of Channels1
Voltage - Isolation3750Vrms
Current Transfer Ratio (Min)80% @ 5mA
Current Transfer Ratio (Max)600% @ 5mA
Rise / Fall Time (Typ)3µs, 3µs
Input TypeDC
Output TypeTransistor
Voltage - Output (Max)80V
Current - Output / Channel50mA
Voltage - Forward (Vf) (Typ)1.3V (Max)
Current - DC Forward (If) (Max)50mA
Vce Saturation (Max)300mV
Operating Temperature-55°C ~ 100°C
Mounting TypeSurface Mount
Package / Case4-SOIC (0.173", 4.40mm)
Supplier Device Package4-Mini-Flat

HMHA2801R2 Datasheet

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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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H M H A 2 8 1 , H M H A 2 8 0 1 S e rie s — 4 -P in H a lf-P itc h M in i-F la t P h o to tra n s is to r O p to c o u p le rs ©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com HMHA281, HMHA2801 Series Rev. 5.2 June 2015 HMHA281, HMHA2801 Series 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers Features ■ Compact 4-pin Package – 2.4 mm Maximum Standoff Height – Half-pitch Leads for Optimum Board Space Savings ■ Current Transfer Ratio: – HMHA281: 50% to 600% – HMHA2801: 80% to 600% – HMHA2801A: 80% to 160% – HMHA2801B: 130% to 260% – HMHA2801C: 200% to 400% ■ Safety and Regulatory Approvals: – UL1577, 3,750 VACRMS for 1 Minute – DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage Applications ■ Digital Logic Inputs ■ Microprocessor Inputs ■ Power Supply Monitor ■ Twisted Pair Line Receiver ■ Telephone Line Receiver Description The HMHA281 and HMHA2801 series devices consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. Schematic Package Outline 1 2 4 3 EMITTER COLLECTANODE CATHODE OR Figure 2. Package Outlines Figure 1. Schematic

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©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com HMHA281, HMHA2801 Series Rev. 5.2 2 H M H A 2 8 1 , H M H A 2 8 0 1 S e rie s — 4 -P in H a lf-P itc h M in i-F la t P h o to tra n s is to r O p to c o u p le rs Safety and Insulation Ratings As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Note: 1. Safety limit values – maximum values allowed in the event of a failure. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV < 300 VRMS I–III Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit VPR Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 904 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak VIORM Maximum Working Insulation Voltage 565 Vpeak VIOTM Highest Allowable Over-Voltage 4000 Vpeak External Creepage ≥ 5 mm External Clearance ≥ 5 mm DTI Distance Through Insulation (Insulation Thickness) ≥ 0.4 mm TS Case Temperature(1) 150 °C IS,INPUT Input Current(1) 200 mA PS,OUTPUT Output Power(1) 300 mW RIO Insulation Resistance at TS, VIO = 500 V (1) > 109 Ω

Page 5

©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com HMHA281, HMHA2801 Series Rev. 5.2 3 H M H A 2 8 1 , H M H A 2 8 0 1 S e rie s — 4 -P in H a lf-P itc h M in i-F la t P h o to tra n s is to r O p to c o u p le rs Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Units TOTAL PACKAGE TSTG Storage Temperature -55 to +125 °C TOPR Operating Temperature -55 to +100 °C TJ Junction Temperature -40 to +125 °C PD Total Device Power Dissipation @ TA = 25°C 210 mW Derate Above 25°C 2.1 mW/°C EMITTER IF (avg) Continuous Forward Current 50 mA IF (pk) Peak Forward Current (1 µs pulse, 300 pps) 1 A VR Reverse Input Voltage 6 V PD LED Power Dissipation @ TA = 25°C 60 mW Derate Above 25°C 0.6 mW/°C DETECTOR IC Continuous Collector Current 50 mA VCEO Collector-Emitter Voltage 80 V VECO Emitter-Collector Voltage 7 V PD Detector Power Dissipation @ TA = 25°C 150 mW Derate Above 25°C 1.5 mW/°C

Page 6

©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com HMHA281, HMHA2801 Series Rev. 5.2 4 H M H A 2 8 1 , H M H A 2 8 0 1 S e rie s — 4 -P in H a lf-P itc h M in i-F la t P h o to tra n s is to r O p to c o u p le rs Electrical Characteristics TA = 25°C Symbol Parameter Test Conditions Device Min. Typ. Max. Unit INDIVIDUAL COMPONENT CHARACTERISTICS Emitter VF Forward Voltage IF = 10 mA All 1.0 1.3 V IR Reverse Current VR = 5 V All 5 µA Detector BVCEO Breakdown Voltage Collector to Emitter IC = 0.5 mA, IF = 0 All 80 V BVECO Emitter to Collector IE = 100 µA, IF = 0 All 7 ICEO Collector Dark Current VCE = 80 V, IF = 0 All 100 nA CCE Capacitance VCE = 0 V, f = 1 MHz All 10 pF TRANSFER CHARACTERISTICS CTR DC Current Transfer Ratio IF = 5 mA, VCE = 5 V HMHA281 50 600 % HMHA2801 80 600 HMHA2801A 80 160 HMHA2801B 130 260 HMHA2801C 200 400 VCE (SAT) Saturation Voltage IF = 8 mA, IC = 2.4 mA HMHA281 0.4 V IF = 10 mA, IC = 2 mA HMHA2801, HMHA2801A, HMHA2801B, HMHA2801C 0.3 tr Rise Time (Non-Saturated) IC = 2 mA, VCE = 5 V, RL = 100 Ω All 3 µs tf Fall Time (Non-Saturated) IC = 2 mA, VCE = 5 V, RL = 100 Ω All 3 ISOLATION CHARACTERISTICS VISO Steady State Isolation Voltage 1 Minute All 3750 VACRMS

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©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com HMHA281, HMHA2801 Series Rev. 5.2 5 H M H A 2 8 1 , H M H A 2 8 0 1 S e rie s — 4 -P in H a lf-P itc h M in i-F la t P h o to tra n s is to r O p to c o u p le rs Typical Performance Characteristics VF - FORWARD VOLTAGE (V) IF - FORWARD CURRENT (mA) 0.6 0.8 1.0 1.2 1.4 1.6 I F - F O R W A R D C U R R E N T ( m A ) I C / I F - C U R R E N T T R A N S F E R R A T IO ( % ) I C - C O L L E C T O R C U R R E N T ( m A ) N O R M A L IZ E D C T R ( IF ) / C T R ( 5 m A ) 1 10 100 Figure 3. Forward Current vs. Forward Voltage Figure 4. Collector Current vs. Forward Current TA = 25˚C 1 10 100 0.1 1 10 100 VCE = 0.4 V VCE = 10 V VCE = 5 V IF - FORWARD CURRENT (mA) 1 10 100 10 100 1000 VCE = 0.4 V VCE = 10 V VCE = 5 V TA = 25˚C Figure 5. Current Transfer Ratio vs. Forward Current Figure 7. Collector Current vs. Temperature TA - AMBIENT TEMPERATURE (°C) Figure 6. Normalized CTR vs. Temperature -40 -20 0 20 40 60 80 100 -0.5 0.0 0.5 1.0 1.5 2.0 Normalized to: IF = 5 mA VCE = 5 V TA = 25˚C IF = 5 mA IF = 10 mA IF = 1 mA IF = 0.5mA TA - AMBIENT TEMPERATURE (°C) -40 -20 0 20 40 60 80 100 I C - C O L L E C T O R C U R R E N T ( m A ) 0.1 1 10 100 IF = 25 mA IF = 5 mA IF = 10 mA IF = 1 mA IF = 0.5 mA VCE = 5 V

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©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com HMHA281, HMHA2801 Series Rev. 5.2 6 H M H A 2 8 1 , H M H A 2 8 0 1 S e rie s — 4 -P in H a lf-P itc h M in i-F la t P h o to tra n s is to r O p to c o u p le rs Typical Performance Characteristics (Continued) 1 2 3 4 5 6 7 8 9 10 10 20 30 40 50 VCE - COLLECTOR-EMITTER VOLTAGE (V) 0 I C - C O L L E C T O R C U R R E N T ( m A ) I C - C O L L E C T O R C U R R E N T ( m A ) S W IT C H IN G T IM E ( μs ) 0 Figure 8. Collector Current vs. Collector-Emitter Voltage VCE - COLLECTOR-EMITTER VOLTAGE (V) Figure 9. Collector Current vs. Collector-Emitter Voltage TA - AMBIENT TEMPERATURE (˚C) 0 I C E O - C O L L E C T O R D A R K C U R R E N T ( μA ) Figure 10. Collector Dark Current vs. Temperature Figure 12. Collector-Emitter Saturation Voltage vs. Temperature RL - LOAD RESISTANCE (KΩ) Figure 11. Switching Time vs. Load Resistance TA = 25˚C IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA IF = 5.0 mA IF = 1.0 mA 0.0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 12 14 16 18 IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 0.5 mA IF = 1.0 mA IF = 10 mA IF = 5 mA IF = 2 mA 20 40 60 80 100 1 10 100 0.01 0.001 0.1 1 10 VCE = 48 V VCE = 10 V VCE = 24 V VCE = 5 V 0.1 1 10 100 1000 tOFF tON tS TA = 25˚C IF = 16 mA VCC = 5 V TA - AMBIENT TEMPERATURE (˚C) -40 -20 0 20 40 60 80 100 V C E (S A T ) - C O L L E C T O R -E M IT T E R S A T U R A T IO N V O LT A G E ( V ) 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.24 0.26 0.28 0.30 IF = 5 mA IC = 1 mA

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©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com HMHA281, HMHA2801 Series Rev. 5.2 7 H M H A 2 8 1 , H M H A 2 8 0 1 S e rie s — 4 -P in H a lf-P itc h M in i-F la t P h o to tra n s is to r O p to c o u p le rs Reflow Profile Figure 13. Reflow Profile Profile Freature Pb-Free Assembly Profile Temperature Minimum (Tsmin) 150°C Temperature Maximum (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 seconds Ramp-up Rate (tL to tP) 3°C/second maximum Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60–150 seconds Peak Body Package Temperature 245°C +0°C / –5°C Time (tP) within 5°C of 245°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second maximum Time 25°C to Peak Temperature 8 minutes maximum T e m p e ra tu re ( °C ) 260 240 220 200 180 160 140 120 100 80 60 40 20 0 TL ts tL tP TP245 Tsmax Tsmin 120 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S 240 360 Time 25°C to Peak

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©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com HMHA281, HMHA2801 Series Rev. 5.2 8 H M H A 2 8 1 , H M H A 2 8 0 1 S e rie s — 4 -P in H a lf-P itc h M in i-F la t P h o to tra n s is to r O p to c o u p le rs Ordering Information Note: 2. The product orderable part number system listed in this table also applies to the HMHA281, HMHA2801A, HMHA2801B, and HMHA2801C products. Marking Information Figure 14. Top Mark Table 1. Top Mark Definitions Part Number Package Packing Method HMHA2801 Half Pitch Mini-Flat 4-Pin Tube (100 units) HMHA2801R2 Half Pitch Mini-Flat 4-Pin Tape and Reel (2500 Units) HMHA2801V Half Pitch Mini-Flat 4-Pin, DIN EN/IEC60747-5-5 Option Tube (100 Units) HMHA2801R2V Half Pitch Mini-Flat 4-Pin, DIN EN/IEC60747-5-5 Option Tape and Reel (2500 Units) 1 Fairchild Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., “5” 5 Digit Work Week, Ranging from “01” to “53” 6 Assembly Package Code 1 2 6 4 3 5 281 XV M1YY

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